# N CHANNEL MOSFET, 60V, 240mA TO-236

![Product image](https://novapart.co/image/farnell:1837250/)

**URL**: https://novapart.co/products/2N7002E-T1-E3/n-channel-mosfet-60v-240ma-to-236
**SKU**: 2N7002E-T1-E3
**Manufacturer**: VISHAY
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.2180
**Stock**: 1000+
**Lead Time**: 2 days (indicative)

## Description

Cha; N CHANNEL MOSFET, 60V, 240mA TO-236; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:240mA; Transistor Mounting:Surface Mount; Rds(on) Test Volt

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| No. Of Pins | 3Pins |
| Qualification | - |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1837250/)

**2N7002E** 

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Vishay Siliconix 

## **N-Channel 60 V (D-S) MOSFET** 

|**PRODUCT SUMMARY**|**PRODUCT SUMMARY**|**PRODUCT SUMMARY**|
|---|---|---|
|**VDS  (V)**|**RDS(on)  (****)**|**ID  (mA)**|
|60|3 at VGS= 10 V|240|



## **FEATURES** 

- **Halogen-free According to IEC 61249-2-21 Definition** 

- Low On-Resistance: 3  

- Low Threshold: 2 V (typ.) 

- Low Input Capacitance: 25 pF 

- Fast Switching Speed: 7.5 ns 

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- Low Input and Output Leakage 

- Compliant to RoHS Directive 2002/95/EC 

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TO-236<br>(SOT-23)<br>Marking Code: 7E<br>G 1<br>3 D<br>S 2<br>Top View<br>Ordering Information:  2N7002E-T1-E3 (Lead (Pb)-free)<br>                                    2N7002E-T1-GE3 (Lead (Pb)-free and Halogen-free)<br>**----- End of picture text -----**<br>


## **BENEFITS** 

- Low Offset Voltage 

- Low-Voltage Operation 

- Easily Driven Without Buffer 

- High-Speed Circuits 

- Low Error Voltage 

## **APPLICATIONS** 

- Direct Logic-Level Interface: TTL/CMOS 

- Drivers: Relays, Solenoids, Lamps, Hammers, Display, Memories, Transistors, etc. 

- Battery Operated Systems 

- Solid-State Relays 

|**ABSOLUTE MAXIMUM RATINGS**(TA= 25 °C,unless otherwise noted)|**ABSOLUTE MAXIMUM RATINGS**(TA= 25 °C,unless otherwise noted)|**ABSOLUTE MAXIMUM RATINGS**(TA= 25 °C,unless otherwise noted)|||
|---|---|---|---|---|
|**Parameter**||**Symbol**|**Limit**|**Unit**|
|Drain-Source Voltage||VDS|60|V|
|Gate-Source Voltage||VGS|± 20||
|Continuous Drain Current (TJ= 150 °C)|TA= 25 °C|ID|240|mA|
||TA= 70 °C||190||
|Pulsed Drain Currenta||IDM|1300||
|Power Dissipation|TA= 25 °C|PD|0.35|W|
||TA= 70 °C||0.22||
|Thermal Resistance, Junction-to-Ambient||RthJA|357|°C/W|
|Operating Junction and Storage Temperature Range||TJ,Tstg|- 55 to 150|°C|



Notes: 

a. Pulse width limited by maximum junction temperature. 

Document Number: 70860 S11-0183-Rev. F, 07-Feb-11 

www.vishay.com 

1 

**2N7002E** 

## Vishay Siliconix 

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|**SPECIFICATIONS**(TA= 25 °C, unless otherwise noted)|**SPECIFICATIONS**(TA= 25 °C, unless otherwise noted)|**SPECIFICATIONS**(TA= 25 °C, unless otherwise noted)|||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Test Conditions**|**Limits**|||**Unit**|
||||**Min.**|**Typ.a**|**Max.**||
|**Static**|||||||
|Drain-Source Breakdown Voltage|VDS|VGS= 0 V, ID= 10 µA|60|68||V|
|Gate-Threshold Voltage|VGS(th)|VDS= VGS, ID= 250 µA|1|2|2.5||
|Gate-Body Leakage|IGSS|VDS= 0 V, VGS= ± 15 V|||± 10|nA|
|Zero Gate Voltage Drain Current|IDSS|VDS= 60 V, VGS= 0 V|||1|µA|
|||VDS= 60 V, VGS= 0 V , TJ= 125 °C|||500||
|On-State Drain Currentb|ID(on)|VGS= 10 V, VDS= 7.5 V|800|1300||mA|
|||VGS= 4.5 V, VDS= 10 V|500|700|||
|Drain-Source On-Resistanceb|RDS(on)|VGS= 10 V, ID= 250 mA||1.2|3||
|||VGS= 4.5 V, ID= 200 mA||1.8|4||
|Forward Transconductanceb|gfs|VDS= 15 V, ID= 200 mA||600||mS|
|Diode Forward Voltage|VSD|IS= 200 mA, VGS= 0 V||0.85|1.2|V|
|**Dynamica**|||||||
|Total Gate Charge|Qg|VDS= 10 V, VGS= 4.5 V<br>ID 250 mA||0.4|0.6|nC|
|Gate-Source Charge|Qgs|||0.06|||
|Gate-Drain Charge|Qgd|||0.06|||
|Input Capacitance|Ciss|VDS= 5 V, VGS= 0 V, f = 1 MHz||21||pF|
|Output Capacitance|Coss|||7|||
|Reverse Transfer Capacitance|Crss|||2.5|||
|**Switchinga, c**|||||||
|Turn-On Time|td(on)|VDD= 10 V, RL= 40<br>ID 250 mA, VGEN= 10 V, Rg= 10||13|20|ns|
|Turn-Off Time|td(off)|||18|25||



Notes: 

a. For DESIGN AID ONLY, not subject to production testing. 

- b. Pulse test: pulse width  300 µs duty cycle  2 %. 

- c. Switching time is essentially independent of operating temperature. 

_Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability._ 

www.vishay.com 2 

Document Number: 70860 S11-0183-Rev. F, 07-Feb-11 

**2N7002E** 

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## Vishay Siliconix 

## **TYPICAL CHARACTERISTICS** (25 °C, unless otherwise noted) 

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**----- Start of picture text -----**<br>
1.0<br>VGS = 10 V, 9 V, 8 V,  5 V<br>           7 V, 6 V<br>0.8<br>0.6<br>4 V<br>0.4<br>0.2<br>3 V<br>0.0<br>0 1 2 3 4 5<br>VDS - Drain-to-Source Voltage (V)<br> - Drain Current (A)<br>ID<br>**----- End of picture text -----**<br>


## **Output Characteristics** 

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1.2<br>TJ = - 55 °C<br>0.9<br>25 °C<br>125 °C<br>0.6<br>0.3<br>0.0<br>0 1 2 3 4 5 6 7<br>VGS - Gate-to-Source Voltage (V)<br> - Drain Current (A)<br>ID<br>**----- End of picture text -----**<br>


## **Transfer Characteristics** 

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4<br>3<br>ID at 250 mA<br>2<br>ID at 75 mA<br>1<br>0<br>0 2 4 6 8 10<br>VGS - Gate-to-Source Voltage (V)<br>)Ω<br> - On-Resistance (<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


**On-Resistance vs. Gate-Source Voltage** 

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2.0<br>VGS = 10 V at 250 mA<br>1.6<br>1.2 V GS  = 4.5 V<br>at 200 mA<br>0.8<br>0.4<br>0.0<br>- 50 - 25 0 25 50 75 100 125 150<br>TJ - Junction Temperature (°C)<br>On-Resistance vs. Junction Temperature<br> - On-Resistance<br>(Normalized)<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
3.5<br>3.0<br>2.5<br>VGS = 4.5 V<br>2.0<br>VGS = 10 V<br>1.5<br>1.0<br>0.5<br>0.0<br>0.0 0.2 0.4 0.6 0.8 1.0<br>ID - Drain Current (A)<br>On-Resistance vs. Drain Current<br>0.4<br>0.2<br>ID = 250 µA<br>0<br>- 0.2<br>- 0.4<br>- 0.6<br>- 0.8<br>- 50 - 25 0 25 50 75 100 125 150<br>TJ - Junction Temperature (°C)<br>Threshold Voltage Variance Over Temperature<br>)Ω<br> - On-Resistance (<br>DS(on)<br>R<br> - Variance (V)<br>GS(th)<br>V<br>**----- End of picture text -----**<br>


Document Number: 70860 S11-0183-Rev. F, 07-Feb-11 

www.vishay.com 

3 

**2N7002E** 

## Vishay Siliconix 

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## **TYPICAL CHARACTERISTICS** (25 °C, unless otherwise noted) 

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**----- Start of picture text -----**<br>
40 1.0<br>VDS = 30 V<br>ID = 0.25 A<br>32 0.8<br>Ciss<br>24 0.6<br>16 0.4<br>Coss<br>8 0.2<br>Crss<br>0 0.0<br>0 5 10 15 20 25 0.0 0.1 0.2 0.3 0.4 0.5<br>VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC)<br> Capacitance   Gate Charge<br>2<br>1<br>TJ = 85 °C<br>25 °C<br>- 55 °C<br>0.1<br>0 0.2 0.4 0.6 0.8 1.0 1.2<br>VSD - Source-to-Drain Voltage (V)<br>Source-Drain Diode Forward Voltage<br>C - Capacitance (pF)  - Gate-to-Source Voltage (V)<br>GS<br>V<br> - Source Current (A)<br>IS<br>**----- End of picture text -----**<br>


_Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?70860._ 

www.vishay.com 4 

Document Number: 70860 S11-0183-Rev. F, 07-Feb-11 

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## **Package Information** 

## Vishay Siliconix 

## **SOT-23 (TO-236): 3-LEAD** 

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b<br>3<br>E1 E<br>1 2<br>S e<br>e1<br>D<br>0.10 mm<br>C<br>0.004" C 0.25 mm<br>A A2 q<br>Gauge Plane<br>Seating Plane Seating Plane<br>A1 C L<br>L1<br>**----- End of picture text -----**<br>


|**Dim**|**MILLIMETERS**|**MILLIMETERS**|**INCHES**|**INCHES**|
|---|---|---|---|---|
||**Min**|**Max**|**Min**|**Max**|
|**A**|0.89|1.12|0.035|0.044|
|**A1**|0.01|0.10|0.0004|0.004|
|**A2**|0.88|1.02|0.0346|0.040|
|**b**|0.35|0.50|0.014|0.020|
|**c**|0.085|0.18|0.003|0.007|
|**D**|2.80|3.04|0.110|0.120|
|**E**|2.10|2.64|0.083|0.104|
|**E1**|1.20|1.40|0.047|0.055|
|**e**|0.95 BSC||0.0374 Ref||
|**e1**|1.90 BSC||0.0748 Ref||
|**L**|0.40|0.60|0.016|0.024|
|**L1**|0.64 Ref||0.025 Ref||
|**S**|0.50 Ref||0.020 Ref||
|**q**|3°|8°|3°|8°|
|ECN: S-03946-Rev. K, 09-Jul-01<br>DWG: 5479|||||



Document Number: 71196 09-Jul-01 

www.vishay.com 

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**Application Note 826** 

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## Vishay Siliconix 

## **RECOMMENDED MINIMUM PADS FOR SOT-23** 

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0.037 0.022<br>(0.950) (0.559)<br>0.053<br>(1.341)<br>0.097<br>(2.459)<br>Recommended Minimum Pads<br>Dimensions in Inches/(mm)<br>0.106 (2.692) 0.049 (1.245)<br>0.029 (0.724)<br>**----- End of picture text -----**<br>


> Return to Index Return to Index 

Document Number: 72609 Revision: 21-Jan-08 

www.vishay.com 25 

**Legal Disclaimer Notice** Vishay 

www.vishay.com 

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## **Disclaimer** 

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product.  To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. 

Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications.  Such statements are not binding statements about the suitability of products for a particular application.  It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time.  All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts.  Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. 

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. 

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay.  Product names and markings noted herein may be trademarks of their respective owners. 

_**© 2019 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED**_ 

Revision: 01-Jan-2019 

Document Number: 91000 

**1** 



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---

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