2N7002DW

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**==> picture [54 x 9] intentionally omitted <==**

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January 2015<br>**----- End of picture text -----**<br>


## **2N7002DW N-Channel Enhancement Mode Field Effect Transistor** 

## **Features** 

- Dual N-Channel MOSFET 

- Low On-Resistance 

- Low Gate Threshold Voltage 

- Low Input Capacitance 

- Fast Switching Speed 

- Low Input/Output Leakage 

- Ultra-Small Surface Mount Package 

- Lead Free/RoHS Compliant 

**==> picture [74 x 74] intentionally omitted <==**

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SC70-6 (SOT - 363)<br>1<br>Marking : 2N<br>**----- End of picture text -----**<br>


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D2 G1 S1<br>1 S2 G2 D1<br>**----- End of picture text -----**<br>


## **Ordering Information** 

|**Part Number**<br>~~_——~~|**Top Mark**|**Package**|**Packing Method**|
|---|---|---|---|
|2N7002DW<br>~~_——~~|2N|SC70 6L|Tape and Reel|



## **Absolute Maximum Ratings** 

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. 

|**Symbol**|**Parameter**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|---|
|VDSS|Drain-Source Voltage||60|V|
|VDGR|Drain-Gate Voltage (RGS≤ 1.0 MΩ)||60|V|
|VGSS|Gate-Source Voltage|Continuous|±20|V|
|||Pulsed|±40||
|ID|Drain Current|Continuous|115|mA|
|||Continuous at 100°C|73||
|||Pulsed|800||
|TJ, TSTG|Junction and Storage Temperature Range||-55 to +150|°C|



© 2007 Fairchild Semiconductor Corporation 2N7002DW Rev. 1.2 

www.fairchildsemi.com 

## **Thermal Characteristics** 

Values are at TA = 25°C unless otherwise noted. 

**Symbol Parameter Value Unit** Total Device Dissipation 200 mW PD Derate Above TA = 25°C 1.6 mW/ ° C R θ JA Thermal Resistance, Junction-to-Ambient[(1)] 625 ° C/W ~~ee~~ **Note:** 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. Minimum land pad size. 

## **Electrical Characteristics** 

|**Symbol**<br>~~a~~|**Parameter**<br>~~a~~|**Conditions**<br>~~==2=-5~~|**Min.**<br>~~==2=-5~~|**Typ.**<br>~~==2=-5~~|**Max.**<br>~~==2=-5~~|**Unit**<br>~~==2=-5~~|
|---|---|---|---|---|---|---|
|**Off Characteristics**(2)<br>~~a==2=-5~~|||||||
|BVDSS<br>~~a~~|Drain-Source Breakdown Voltage<br>~~a~~|VGS= 0 V, ID= 10μA<br>~~==2=-5~~|60<br>~~==2=-5~~|78<br>~~==2=-5~~|~~==2=-5~~|V<br>~~==2=-5~~|
|IDSS<br>~~a~~|Zero Gate Voltage Drain Current<br>~~a~~|VDS= 60 V, VGS= 0 V<br>~~==2=-5~~|~~==2=-5~~|0.001<br>~~==2=-5~~|1.0<br>~~==2=-5~~|μA<br>~~==2=-5~~|
|||VDS= 60 V, VGS= 0 V,<br>TJ= 125°C<br>~~==2=-5~~|~~==2=-5~~|7<br>~~==2=-5~~|500<br>~~==2=-5~~||
|IGSS<br>~~a~~|Gate-Body Leakage<br>~~a~~|VGS= ±20 V, VDS= 0 V<br>~~==2=-5~~|~~==2=-5~~|0.2<br>~~==2=-5~~|±10<br>~~==2=-5~~|nA<br>~~==2=-5~~|
|**On Characteristics**(2)<br>~~a==2=-5~~<br>~~S|~~|||||||
|VGS(th)<br>~~a~~<br>~~S|~~|Gate Threshold Voltage<br>~~a~~<br>~~S|Ee~~|VDS=VGS,ID = 250 μA<br>~~==2=-5~~<br>~~Ee~~|1.00<br>~~==2=-5~~<br>~~Ee~~|1.76<br>~~==2=-5~~<br>~~Ee~~|2.00<br>~~==2=-5~~<br>~~Ee~~|V<br>~~==2=-5~~<br>~~Ee~~|
|RDS(ON)<br>~~a~~<br>~~S|~~|Static Drain-Source On-Resistance<br>~~a ~~<br>~~S|Ee~~|VGS= 5 V, ID= 0.05 A<br> ~~==2=-5~~<br>~~Ee~~|~~==2=-5~~<br>~~Ee~~|1.6<br>~~==2=-5~~<br>~~Ee~~|7.5<br>~~==2=-5~~<br>~~Ee~~|Ω<br>~~==2=-5~~<br>~~Ee~~|
|||VGS= 10 V, ID= 0.5 A<br>~~Ee~~|~~Ee~~|~~Ee~~|2.0<br>~~Ee~~||
|||VGS= 10 V, ID= 0.5 A,<br>TJ= 125°C<br>~~Ee~~|~~Ee~~|2.53<br>~~Ee~~|13.5<br>~~Ee~~||
|ID(ON)<br>~~S|~~|On-State Drain Current<br>~~S|Ee~~|VGS= 10 V, VDS= 7.5 V<br>~~Ee~~|0.50<br>~~Ee~~|1.43<br>~~Ee~~|~~Ee~~|A<br>~~Ee~~|
|gFS<br>~~S|~~<br>~~=——~~|Forward Transconductance<br>~~S|Ee~~<br>~~=——~~|VDS= 10 V, ID= 0.2 A<br>~~Ee~~<br>~~==~~|80.0<br>~~Ee~~<br>~~==~~|356.5<br>~~Ee~~<br>~~==~~|~~Ee~~<br>~~==~~|mS<br>~~Ee~~<br>~~==~~|
|**Dynamic Characteristics**<br>~~S|~~<br>~~=——~~<br>~~==~~|||||||
|Ciss<br>~~S|~~<br>~~=——~~|Input Capacitance<br>~~S|~~<br>~~=——~~|VDS= 25 V, VGS= 0 V,<br>f = 1.0 MHz<br><br>~~==~~|~~==~~|37.8<br><br>~~==~~|50<br><br>~~==~~|pF<br><br>~~==~~|
|Coss<br>~~S|~~<br>~~=——~~|Output Capacitance<br>~~S|~~<br>~~=——~~||~~==~~|12.4<br><br>~~==~~|25<br><br>~~==~~|pF<br><br>~~==~~|
|Crss<br>~~=——~~|Reverse Transfer Capacitance<br>~~=——~~||~~==~~|6.5<br>~~==~~|7<br>~~==~~|pF<br>~~==~~|
|**Switching Characteristics**<br>~~=——~~<br>~~==~~|||||||
|tD(ON)<br>~~=——~~<br>~~——~~|Turn-On Delay Time<br>~~=——~~<br>~~——~~|VDD= 30 V, ID= 0.2 A,<br>VGEN= 10 V, RL= 150Ω,<br>RGEN= 25Ω<br>~~==~~<br>~~——~~|~~==~~<br>~~——~~|5.85<br>~~==~~<br>~~——~~|20<br>~~==~~<br>~~——~~|ns<br>~~==~~<br>~~——~~|
|tD(OFF)<br>~~——~~|Turn-Off Delay Time<br>~~——~~||~~——~~|12.5<br>~~——~~|20<br>~~——~~|ns<br>~~——~~|



© 2007 Fairchild Semiconductor Corporation 2N7002DW Rev. 1.2 

www.fairchildsemi.com 

2 

## **Typical Performance Characteristics** 

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1.6 3.0<br>1.4 Ft| V GS tT = 10V ET VGS = 3V 4V 4.5V 5V<br>1.2 5V 2.5 6V<br>1.0<br>4V<br>0.8 2.0<br>0.6<br>10V<br>0.4 3V 1.5 9V<br>8V<br>0.2 7V<br>2V<br>0.0 Poo 1.0 COT<br>0 1 2 3 4 5 6 7 8 9 10 0.0 0.2 0.4 0.6 0.8 1.0<br>VDS. DRAIN-SOURCE VOLTAGE (V) ID. DRAIN-SOURCE CURRENT(A)<br>Figure 1. On-Region Characteristics Figure 2. On-Resistance Variation with Gate Voltage<br>and Drain Current<br>3.0 3.0<br>VGS = 10V<br>2.5 I D  = 500 mA 2.5<br>2.0 7. Ae<br>ID = 500 mA<br>2.0<br>o 1.5 e<br>ID = 50 mA<br>1.5<br>1.0 pe OE<br>0.5 Trt 1.0 LTE<br>-50 0 50 100 150 2 4 6 8 10<br>TJ. JUNCTION TEMPERATURE(oC) VGS. GATE-SOURCE VOLTAGE (V)<br>Figure 3. On-Resistance Variation with Temperature Figure 4. On-Resistance Variation<br>with Gate-Source Voltage<br>1.0 2.5<br>VDS = 10V TJ = -25oC VGS = VDS<br>0.8 TCO 150 o C<br>25oC<br>125oC 2.0<br>0.6 ID = 1 mA<br>ao Aa 75oC<br>0.4 ID = 0.25 mA<br>1.5<br>0.20.0 Zr}FVA o 1.0 LLLeS ~-Ph<br>2 3 4 5 6 -50 0 50 100 150<br>VGS. GATE-SOURCE VOLTAGE (V) TJ. JUNCTION TEMPERATURE(oC)<br>Figure 5. Transfer Characteristics Figure 6. Gate Threshold Variation with Temperature<br>(on),<br>DS<br>R<br>. DRAIN-SOURCE CURRENT(A)ID<br>DRANI-SOURCE ON-RESISTANCE<br>(on)  (on),<br>DS DS<br>R R<br>DRANI-SOURCE ON-RESISTANCE DRANI-SOURCE ON-RESISTANCE<br>. DRAIN-SOURCE CURRENT(A)ID<br>Vth, Gate-Source Threshold Voltage (V)<br>**----- End of picture text -----**<br>


**Figure 3. On-Resistance Variation with Temperature** 

© 2007 Fairchild Semiconductor Corporation 2N7002DW Rev. 1.2 

www.fairchildsemi.com 

3 

## **Typical Performance Characteristics** (Continued) 

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280<br>VGS = 0 V<br>150oC 240<br>100<br>200<br>PT YA), 160 EERE<br>25oC<br>120<br>10<br>-55oC 80<br>40<br>1 AZ) 0 GEESE<br>0.0 0.2 0.4 0.6 0.8 1.0 0 25 50 75 100 125 150 175<br>VSD, Body Diode Forward Voltage [V] Ta[oC], AMBIENT TEMPERATURE<br>Figure 7. Reverse Drain Current Variation with Diode  Figure 8. Power Derating<br>Forward Voltage and Temperature<br> Reverse Drain Current, [mA]IS [mW], POWER DISSIPATIONPC<br>**----- End of picture text -----**<br>


© 2007 Fairchild Semiconductor Corporation 2N7002DW Rev. 1.2 

www.fairchildsemi.com 

4 

## **Physical Dimensions** 

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SYMM<br>CL<br>2.00±0.20 A 0.65<br>0.50 MIN<br>6 4 B DOO RROD<br>PIN ONE | | | 1.25±0.10 1.90 || 6]| |<br>Kt—t—+ | |<br>— | | |<br>1 3<br>(0.25) 0.300.15 0.40 MIN<br>0.10 A B 1.30<br>0.65<br>_ | o _ oD _ a<br>LAND PATTERN RECOMMENDATION<br>1.30<br>1.00 SEE DETAIL A<br>{ 0.80 4 —<br>\<br>1.10 |<br>J 0.80 \ /<br>1_ \ /<br>0.10 0.10 C<br>C 0.00<br>2.10±0.30<br>SEATING<br>PLANE<br>NOTES: UNLESS OTHERWISE SPECIFIED<br>GAGE    A)  THIS PACKAGE CONFORMS TO EIAJ<br>PLANE        SC-88, 1996.<br>(R0.10)<br>   B)  ALL DIMENSIONS ARE IN MILLIMETERS.<br>0.25    C)  DIMENSIONS DO NOT INCLUDE BURRS<br>0.10        OR MOLD FLASH.<br>0.20    D)  DRAWING FILENAME: MKT-MAA06AREV6<br>0.46 30°<br>0.26 0°<br>DETAILA<br>SCALE: 60X<br>**----- End of picture text -----**<br>


**Figure 9. 6-LEAD, SC70, EIAJ SC-88, 1.25MM WIDE** 

© 2007 Fairchild Semiconductor Corporation 2N7002DW Rev. 1.2 

www.fairchildsemi.com 

5 

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