# Dual MOSFET, N Channel, 60 V, 115 mA, 4.4 ohm

![Product image](https://novapart.co/image/farnell:4627942RL/)

**URL**: https://novapart.co/products/2N7002DW-TP/dual-mosfet-n-channel-60-v-115-ma-44-ohm
**SKU**: 2N7002DW-TP
**Manufacturer**: MICRO COMMERCIAL COMPONENTS (MCC)
**Category**: Semiconductors - Discretes || FETs || Dual MOSFETs
**Price**: €0.0570
**Stock**: 1000+
**Lead Time**: 148 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 6Pins |
| Operating Temperature Max | 150°C |
| Drain Source Voltage Vds N Channel | 60V |
| Continuous Drain Current Id N Channel | 115mA |
| Drain Source On State Resistance N Channel | 4.4ohm |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:4627942RL/)

**2N7002DW** 

## **Features** 

- High Density Cell Design For Low RDS(ON) 

- Voltage Controlled Small Signal Switch 

- Epoxy Meets UL 94 V-0 Flammability Rating 

- Moisture Sensitivity Level 1 

- Halogen Free. “Green” Device[(Note1)] 

- Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) 

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DUAL<br>N-CHANNEL<br>MOSFET<br>**----- End of picture text -----**<br>


## **Maximum Ratings** 

- Operating Junction Temperature Range : -55°C to +150°C 

- Storage Temperature Range: -55°C to +150°C 

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SOT-363<br>**----- End of picture text -----**<br>


- Thermal Resistance:415°C/W Junction to Ambient(Steady-State)[(Note2)] 

|**Parameter**||**Symbol**|**Rating**|**Unit**|
|---|---|---|---|---|
|Drain-Source Voltage||VDS|60|V|
|Gate-Source Volltage||VGS|±20|V|
|Continuous Drain Current|TA=25°C|ID|340|mA|
||TA=100°C||215||
|Pulsed Drain Current(Note3)||IDM|1.36|A|
|Total Power Dissipation(Note4)||PD|300|mW|



Note: 

1. Halogen free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

2. The value of RθJA is measured with the device mounted on 1in[2] FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on RθJA t��10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. 

3. Repetitive rating; pulse width limited by max. junction temperature. 

4. PD is based on max. junction temperature, using junction-ambient thermal resistance. 

## **Internal Structure and Marking Code** 

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D1 G2 S2<br>6 5 4<br>6 5 4<br>K72<br>1 2 3<br>1 2 3<br>S1 G1 D2 Dot Denotes Pin1<br>**----- End of picture text -----**<br>


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G<br>B C<br>A<br>M<br>H<br>K L<br>J<br>D<br>**----- End of picture text -----**<br>


||||DIMENSIONS|DIMENSIONS|DIMENSIONS||
|---|---|---|---|---|---|---|
||DIM|MIN<br>MAX<br>INCHES||MIN<br>MAX<br>MM||NOTE|
||A|0.006|0.014|0.15|0.35||
||B|0.045|0.053|1.15|1.35||
||C|0.079|0.096|2.00|2.45||
||D|0.026||0.65||TYP.|
||G|0.047|0.055|1.20|1.40||
||H|0.071|0.087|1.80|2.20||
||J|-----|0.004|-----|0.10||
||K|0.0 1<br>3|0.043|0.80|1.10||
||L|0.010|0.018|0.26|0.46||
||M|0.003|0.006|0.08|0.15||
|||**SUGGESTED SOLDER PAD LAYOUT**|||||



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## **Electrical Characteristics  @ 25°C (Unless Otherwise Specified)** 

|**Parameter**|**Symbol**|**Test   Conditions**|**Min**|**Typ**|**Max**|**Unit**|
|---|---|---|---|---|---|---|
|**Static Characteristics**|||||||
|Drain-Source Breakdown Voltage|V(BR)DSS|VGS=0V, ID=250µA|60|||V|
|Gate-Source Leakage Current|IGSS|VDS=0V, VGS=±20V|||±10|nA|
|Zero Gate Voltage Drain Current|IDSS|VDS=60V, VGS=0V|||80||
|Gate-Threshold Voltage|VGS(th)|VDS=VGS, ID=250µA|1.0|1.5|2.5|V|
|Drain-Source On-Resistance|RDS(on)|VGS=10V, ID=300mA||1.1|2.5|Ω|
|||VGS=4.5V, ID=200mA||1.3|3||
|Forward Transconductance|gfs|VDS=10V, ID=200mA|80|||ms|
|Gate Resistance|Rg|F=1 MHz, Open drain||4.1||Ω|
|**Diode Characteristics**|||||||
|Continuous Body Diode Current|IS||||115|mA|
|Diode Forward Voltage|VSD|VGS=0V, IS=115mA|0.55||1.2|V|
|Reverse Recovery Time|trr|IF=0.5A, dIF/dt=100A/μs||9.4||ns|
|Reverse Recovery Charge|Qrr|||3.1||nC|
|**Dynamic Characteristics**|||||||
|Input Capacitance|Ciss|VDS=25V,VGS=0V,f=1MHz||25.2||pF|
|Output Capacitance|Coss|||3.5|||
|Reverse Transfer Capacitance|Crss|||2.2|||
|Total Gate Charge|Qg|VDS=25V,VGS=10V,ID=0.5A||1.1||nC|
|Gate-Source Charge|Qgs|||0.19|||
|Gate-Drain Charge|Qgd|||0.25|||
|Turn-On  Delay Time|td(on)|VDD=25V, VGEN=10V,<br>RGEN=25Ω,IDS=500mA||2.3||ns|
|Turn-On  Rise Time|tr|||2.7|||
|Turn-Off  Delay Time|td(off)|||6.3|||
|Turn-Off  Fall Time|tf|||3|||



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## **Curve Characteristics** 

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Fig. 1 - Typical Output Characteristics<br>1.0<br>TJ=25 ℃ VGS=10V<br>6V<br>5V<br>0.8<br>4V<br>0.6<br>VGS=3V<br>0.4<br>0.2 VGS=2.5V<br>VGS=2V<br>0.0<br>0 1 2 3 4 5<br>Drain To Source Voltage (V)<br>Fig. 3 - RDS(ON) � ID<br>2.0<br>TA=25 ° C<br>Pulsed<br>1.8<br>1.6<br>V GS =4.5V<br>1.4<br>1.2 V GS =10V<br>1.0<br>0.8<br>0.1 0.2 0.3 0.4 0.5  0.6 0.7 0.8 0.9 1.0<br>Drain Current (A)<br>Fig. 5 - IS � VSD<br>1<br>100 ℃ 25 ℃<br>0.1<br>0.01<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6<br>Source To Drain Voltage (V)<br>Drain Current (A)<br>Drain-Source On-Resistance (Ω)<br>Source Current (A)<br>**----- End of picture text -----**<br>


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Fig. 2 - Transfer Characteristics<br>1.0<br>VDS=3V 25°C<br>100°C<br>0.8<br>0.6<br>0.4<br>0.2<br>0.0<br>0 1 2 3 4 5<br>Gate To Source Voltage (V)<br>7 Fig. 4 - RDS(ON) — VGS<br>Pulsed<br>6 I D =0.5A<br>5<br>4<br>3<br>2 TA=125°C<br>1 T A =25°C<br>0<br>0 2 4 6 8 10<br>Gate To Source Voltage(V)<br>Fig. 6 - Threshold Voltage<br>2.0<br>1.8<br>1.6<br>I D = 250μA<br>1.4<br>1.2<br>1.0<br>25 50 75 100 125<br>Junction Temperature  (°C)<br>Drain Current (A)<br>Drain-Source On-Resistance (Ω)<br>Threshold Voltage (V)<br>**----- End of picture text -----**<br>


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## **Curve Characteristics** 

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Fig.7-NormalizedOnResistanceCharacteristics<br>2.4<br>VGS=10V<br>ID=0.3A<br>2.0<br>1.6<br>1.2<br>0.8<br>0.4<br>-75 -50 -25 0 25 50 75 100 125 150 175<br>Junction Temperature(°C)<br>Normalized On Resistance<br>**----- End of picture text -----**<br>


## Fig. 9 - Capacitance Characteristics 

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100<br>C iss<br>10<br>C oss<br>Crss<br>1<br>0 10 20 30 40 50 60<br>Drain To Source Voltage (V)<br>Capacitance (pF)<br>**----- End of picture text -----**<br>


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Fig. 8 - GateCharge<br>10<br>VDS=25V<br>ID=0.5A<br>8 Tj=25 ℃<br>6<br>4<br>2<br>0<br>0.0 0.3 0.6 0.9 1.2 1.5<br>Gate Charge(nC)<br>Fig. 10 - Current dissipation<br>0.4<br>0.3<br>0.2<br>0.1<br>0.0<br>0 25 50  75  100  125 150<br>TA-ambient Temperature( ℃ )<br>V)<br>（<br>Gate-Source Voltage<br>ID-Drain Current (A)<br>**----- End of picture text -----**<br>


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Fig.11-PowerDissipation<br>**----- End of picture text -----**<br>


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0.5<br>0.4<br>0.3<br>0.2<br>0.1<br>0.0<br>-50 0 50 100 150<br>TJ-Junction Temperature ( ℃ )<br>）<br>W<br>（<br>Ptot-PowerDissipation<br>**----- End of picture text -----**<br>


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## **Curve Characteristics** 

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Fig. 12 - Safe Operation Area<br>10<br>TJ(MAX)=150 ℃<br>T A =25°C<br>Single Pulse<br>1<br>10us<br>R Limited<br>DS(on)  100us<br>0.1 1ms<br>10ms<br>DC<br>0.01<br>1E-3<br>0.1 1 10 100 1000<br>Drain-Source Voltage (V)<br>Drain Current(A)<br>**----- End of picture text -----**<br>


Fig. 13 -Normalized Transient Thermal Impedance 

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10<br>D=Ton/T In descending order<br>T RJ,PKθJA= =T 415A +P °C/WDM ·Z θJA ·R θJA D=0.5, 0.2, 0.1, 0.05, 0.02, 0.01, single pulse<br>1<br>0.1<br>0.01 Single Pulse<br>1E-3<br>PDM<br>Ton<br>T<br>1E-4<br>1E-5 1E-4 1E-3 0.01 0.1 1 10 100 1000<br>Pulse Width (s)<br>Normalized Transient<br>Zth(J-A) Thermal Resistance<br>**----- End of picture text -----**<br>


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## **Ordering Information** 

|**Device**|**Packing**|
|---|---|
|Part Number-TP|Tape&Reel:3Kpcs/Reel|
|Part Number-TPQ2|Tape&Reel:3Kpcs/Reel|



- For packaging details, go to our website at https://www.mccsemi.com/pdf/ProductPackaging/SOT 363%20Package.pdf 

## *****IMPORTANT NOTICE***** 

_**Micro Commercial Components Corp**_ . reserves the right to make changes without further notice to any product herein to make corrections, modifications , enhancements , improvements , or other changes . _**Micro Commercial Components Corp**_ . does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights ,nor the rights of others . The user of products in such applications shall assume all risks of such use and will agree to hold _**Micro Commercial Components Corp**_ . and all the companies whose products are represented on our website, harmless against all damages. _**��������������������������������**_ . products are sold subject to the general terms and conditions of commercial sale, as published at 

## **https://www.mccsemi.com/Home/TermsAndConditions.** 

## *****LIFE SUPPORT***** 

MCC's products are not authorized for use as critical components in life support devices or systems without the express written approval of Micro Commercial Components Corporation. 

## *****CUSTOMER AWARENESS***** 

Counterfeiting of semiconductor parts is a growing problem in the industry. Micro Commercial Components (MCC) is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. MCC strongly encourages customers to purchase MCC parts either directly from MCC or from Authorized MCC Distributors who are listed by country on our web page cited below. Products customers buy either from MCC directly or from Authorized MCC Distributors are genuine parts, have full traceability, meet MCC's quality standards for handling and storage. **MCC will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources** . MCC is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. 

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## Links

- [View this product on Novapart](https://novapart.co/products/2N7002DW-TP/dual-mosfet-n-channel-60-v-115-ma-44-ohm)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/micro-commercial-components/2n7002dw-tp/mosfet-n-channel-60v-0-115a-sot/dp/4627942RL)
---

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