# N CHANNEL MOSFET, 60V, 115mA TO-236, FUL

![Product image](https://novapart.co/image/farnell:2413948/)

**URL**: https://novapart.co/products/2N7002-T1-E3/n-channel-mosfet-60v-115ma-to-236-ful
**SKU**: 2N7002-T1-E3
**Manufacturer**: VISHAY
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.1560
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Power Dissipation | 200mW |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | N Channel |
| Power Dissipation Pd | 200mW |
| Rds(On) Test Voltage | 10V |
| On Resistance Rds(On) | 7.5ohm |
| Transistor Case Style | TO-236 |
| Drain Source Voltage Vds | 60V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 115mA |
| Drain Source On State Resistance | 7.5ohm |
| Gate Source Threshold Voltage Max | 2.1V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2413948/)

## **2N7000/2N7002, VQ1000J/P, BS170 Vishay Siliconix** ~~a~~ 

## **N-Channel 60-V (D-S) MOSFET** 

~~a~~ **Part Number** ~~ee~~ **V(BR)DSS Min (V) rDS(on) Max ( ) VGS(th) (V) ID (A)** 2N7000 5 @ VGS = 10 V 0.8 to 3 0.2 ~~pe~~ 2N7002 7.5 @ VGS = 10 V ~~ee~~ 1 to 2.5 0.115 ~~es |~~ VQ1000J 60 ~~rr~~ 5.5 @ VGS = 10 V ~~ee~~ 0.8 to 2.5 0.225 ~~es | ee~~ VQ1000P 5.5 @ VGS = 10 V 0.8 to 2.5 0.225 ~~es | ee~~ BS170 5 @ VGS = 10 V 0.8 to 3 0.5 ~~es | eeee~~ 

Low On-Resistance:  2.5 Q. Low Threshold:  2.1 V Low Input Capacitance:  22 pF Fast Switching Speed:  7 ns Low Input and Output Leakage 

Low Offset Voltage Low-Voltage Operation Easily Driven Without Buffer High-Speed Circuits Low Error Voltage 

Direct Logic-Level Interface:  TTL/CMOS Drivers:  Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. Battery Operated Systems Solid-State Relays 

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TO-226AA<br>(TO-92)<br>S 1<br>G 2<br>D<br>3<br>Top View<br>2N7000<br>**----- End of picture text -----**<br>


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Dual-In-Line<br>D1 1 14 D4<br>N S1 2 13 S4 N<br>G1 3 12 G4<br>NC NC<br>4 11<br>G2 5 10 G3<br>N S2 6 9 S3 N<br>D2 7 8 D3<br>Top View<br>**----- End of picture text -----**<br>


Plastic: VQ1000J Sidebraze: VQ1000P 

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TO-236<br>(SOT-23)<br>G 1<br>3 D<br>S 2<br>Top View<br>Marking Code:  72 wll<br>72 = Part Number Code for 2N7002<br>w  = Week Code<br>ll  = Lot Traceability<br>**----- End of picture text -----**<br>


**TO-92-18RM (TO-18 Lead Form)** 

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D 1<br>G 2<br>S<br>3<br>Top View<br>BS170<br>**----- End of picture text -----**<br>


Document Number:  70226 S-04279—Rev. F, 16-Jul-01 

www.vishay.com 

**11-1** 

|||||||||||
|---|---|---|---|---|---|---|---|---|---|
|**Parameter**<br>~~a~~||**Symbol**|2N7000|**2N7002**|**Single**<br>~~ee~~<br>~~ee~~||**Total Quad**<br>~~ee~~|**BS170**|**Unit**|
||||||**VQ1000J**<br>~~es~~|**VQ1000P**<br>~~es~~<br>~~ee~~|**VQ1000J/P**<br>~~es~~|||
|Drain-Source Voltage<br>~~a~~||VDS|60|60|60|60<br>~~ee~~||60|V|
|Gate-Source Voltage—Non-Repetitive<br>~~OO~~||VGSM<br>~~OO~~|40<br>~~OO~~|40<br>~~OO~~|30<br>~~OO~~|~~OO~~|~~OO~~|25<br>~~OO~~||
|Gate-Source Voltage—Continuous<br>~~OO~~||VGS<br>~~OO~~|20<br>~~OO~~|20<br>~~OO~~|20<br>~~OO~~|20<br>~~OO~~|~~OO~~|20<br>~~OO~~||
|**Continuous Drain Current**<br>(TJ= 150 C)<br>~~py~~<br>~~|~~|TA= 25 C<br>~~py~~<br>~~|~~|ID<br>~~py~~|0.2<br>~~py~~<br>~~ee~~|0.115<br>~~py~~|0.225<br>~~py~~|0.225<br>~~py~~|~~py~~|0.5<br>~~py~~|A|
||TA= 100 C<br>~~py~~<br>~~|~~||0.13<br>~~py~~<br>~~ee~~|0.073<br>~~py~~|0.14<br>~~py~~|0.14<br>~~py~~|~~py~~|0.175<br>~~py~~||
|Pulsed Drain Currenta<br>~~|~~<br>~~GO~~<br>~~eeces~~||IDM<br>~~GO~~<br>~~ee~~|0.5<br>~~ee~~<br>~~GO~~<br>~~ee~~|0.8<br>~~GO~~<br>~~ee ee~~|1<br>~~GO~~<br>~~ee~~|1<br>~~GO~~<br>~~ee~~|~~GO~~<br>~~ee~~|~~GO~~||
|Power Dissipation<br>~~ee~~<br>~~|~~|TA= 25 C<br>~~ces~~<br>~~|~~|PD<br>~~ee~~|0.4<br>~~ee~~<br>~~ee~~|0.2<br>~~ee ee~~<br>~~es~~|1.3<br>~~ee~~<br>~~es~~|1.3<br>~~ee~~<br>~~es~~|2<br>~~ee~~<br>~~es~~|0.83<br>~~es~~|W|
||TA= 100 C<br>~~ces~~<br>~~|~~||0.16<br>~~ee~~<br>~~ee~~|0.08<br>~~ee ee~~<br>~~es~~<br>~~GO~~|0.52<br>~~ee~~<br>~~es~~<br>~~GO~~|0.52<br>~~ee~~<br>~~es~~|0.8<br>~~ee~~<br>~~es~~|~~es~~||
|Thermal Resistance, Junction-to-Ambient<br>~~ee ces~~<br>~~|~~<br>~~GD~~||RthJA<br>~~ee~~<br>~~GD~~|312.5<br>~~ee ~~<br>~~ee~~<br>~~GD~~|625<br> ~~ee ee~~<br>~~es~~<br>~~GD~~<br>~~GO~~|96<br>~~ee ~~<br>~~es~~<br>~~GD~~<br>~~GO~~|96<br> ~~ee ~~<br>~~es~~<br>~~GD~~|62.5<br> ~~ee~~<br>~~es~~<br>~~GD~~|156<br>~~es~~<br>~~GD~~|C/W<br>~~GD~~|
|Operating Junction and<br>Storage Temperature Range||TJ, Tstg|–55 to 150<br>~~GO~~||||||C|



Notes 

a. Pulse width limited by maximum junction temperature. b. tp Ss 50 s. ou 

|||||||||||
|---|---|---|---|---|---|---|---|---|---|
|**Parameter**<br>~~a ~~|**Symbol**<br> ~~———~~|**Test Conditions**<br>~~———~~||**Typa**<br>~~———~~|**Limits**<br>~~———~~||||**Unit**|
||||||2N7000<br>~~———~~||2N7002<br>~~———~~|||
||||||**Min**<br>~~———~~|**Max**<br>~~———~~|**Min**<br>~~———~~|**Max**<br>~~———~~||
|**Static**<br>~~a]~~||||||||||
|Drain-Source Breakdown Voltage<br>~~a~~<br>~~——————~~|V(BR)DSS<br>~~_—————EEEEE~~|VGS= 0 V, ID= 10 A<br>~~_—————EEEEE~~||70<br>~~_—————EEEEE~~|60<br>~~_—————EEEEE~~|~~_—————EEEEE~~|60<br>~~_—————EEEEE~~|~~_—————EEEEE~~|V|
|Gate-Threshold Voltage<br>~~——————~~|VGS(th)<br>~~_—————EEEEE~~|VDS= VGS, ID= 1 mA<br>~~_—————EEEEE~~||2.1<br>~~_—————EEEEE~~|0.8<br>~~_—————EEEEE~~|3<br>~~_—————EEEEE~~|~~_—————EEEEE~~|~~_—————EEEEE~~||
|||VDS= VGS, ID= 0.25 mA<br>~~_—————EEEEE~~<br>~~ee~~||2.0<br>~~_—————EEEEE~~<br>~~ee~~|~~_—————EEEEE~~<br>~~ee~~|~~_—————EEEEE~~<br>~~ee~~|1<br>~~_—————EEEEE~~<br>~~ee~~|2.5<br>~~_—————EEEEE~~<br>~~ee~~||
|Gate-Body Leakage<br>~~——————~~|IGSS<br>~~_—————EEEEE~~|VDS= 0 V, VGS=<br>15 V<br>~~_—————EEEEE~~||~~_—————EEEEE~~|~~_—————EEEEE~~|10<br>~~_—————EEEEE~~|~~_—————EEEEE~~|~~_—————EEEEE~~|nA|
|||VDS= 0 V, VGS=<br>20 V<br>~~a~~||~~a~~|~~a~~|~~a~~|~~a~~|100<br>~~a~~||
|Zero Gate Voltage Drain Current|IDSS|VDS= 48 V, VGS= 0 V<br>TC= 125 C<br>~~ee~~<br>~~a~~<br>~~——————EEE~~||~~ee~~<br>~~ee~~|~~ee~~<br>~~ee~~|1<br>~~ee~~<br>~~ee~~|~~ee~~<br>~~ee~~|~~ee~~|A|
||||TC= 125 C<br>~~ee~~<br>~~a~~<br>~~——————EEE~~|~~ee~~<br>~~ee~~<br>~~——————EEE~~|~~ee~~<br>~~ee~~<br>~~——————EEE~~|1000<br>~~ee~~<br>~~ee~~<br>~~——————EEE~~|~~ee~~<br>~~ee~~<br>~~——————EEE~~|~~ee~~<br>~~——————EEE~~||
|||VDS= 60 V, VGS= 0 V<br>TC= 125 C<br>~~a~~<br>~~——————EEE~~<br>~~es~~||~~ee ~~<br>~~——————EEE~~|~~ee~~<br>~~——————EEE~~|~~ee ~~<br>~~——————EEE~~|~~ee~~<br>~~——————EEE~~|1<br>~~——————EEE~~||
||||TC= 125 C<br>~~——————EEE~~<br>~~es~~|~~——————EEE~~<br>~~es~~|~~——————EEE~~<br>~~es~~|~~——————EEE~~<br>~~es~~|~~——————EEE~~<br>~~es~~|500<br>~~——————EEE~~<br>~~es~~||
|On-State Drain Currentb|ID(on)|VDS= 10  V, VGS= 4.5 V<br>~~——————EEE~~||0.35<br>~~——————EEE~~|0.075<br>~~——————EEE~~|~~——————EEE~~|~~——————EEE~~|~~——————EEE~~|A|
|||VDS= 7.5  V, VGS= 10 V||1|||0.5|||
|Drain-Source On-Resistanceb|r**DS(on)**|VGS= 4.5 V, ID= 0.075 A<br>~~a~~<br>~~——————EEE~~||4.5<br>~~a~~<br>~~——————EEE~~|~~a~~<br>~~——————EEE~~|5.3<br>~~a~~<br>~~——————EEE~~|~~a~~<br>~~——————EEE~~|~~a~~<br>~~——————EEE~~||
|||VGS= 5 V, ID= 0.05 A<br>TC= 125 C<br>~~——————EEE~~<br>~~es~~<br>~~——————EE~~||3.2<br>~~——————EEE~~|~~——————EEE~~|~~——————EEE~~|~~——————EEE~~|7.5<br>~~——————EEE~~||
||||TC= 125 C<br>~~——————EEE~~<br>~~es~~<br>~~——————EE~~|5.8<br>~~——————EEE~~<br>~~es~~<br>~~——————EE~~|~~——————EEE~~<br>~~es~~<br>~~——————EE~~|~~——————EEE~~<br>~~es~~<br>~~——————EE~~|~~——————EEE~~<br>~~es~~<br>~~——————EE~~|13.5<br>~~——————EEE~~<br>~~es~~<br>~~——————EE~~||
|||VGS= 10 V, ID= 0.5 A<br>TJ= 125 C<br>~~——————EEE~~<br>~~——————EE~~<br>~~Ps~~||2.4<br>~~——————EEE~~<br>~~——————EE~~|~~——————EEE~~<br>~~——————EE~~|5<br>~~——————EEE~~<br>~~——————EE~~|~~——————EEE~~<br>~~——————EE~~|7.5<br>~~——————EEE~~<br>~~——————EE~~||
||||TJ= 125 C<br>~~——————EE~~<br>~~Ps~~|4.4<br>~~——————EE~~<br>~~Ps~~|~~——————EE~~<br>~~Ps~~|9<br>~~——————EE~~<br>~~Ps~~|~~——————EE~~<br>~~Ps~~|13.5<br>~~——————EE~~<br>~~Ps~~||
|Forward Transconductanceb<br>~~ee~~<br>~~a~~|gfs<br>~~ee~~<br>~~GO~~|VDS= 10 V, ID= 0.2 A<br>~~——————EE~~<br>~~ee~~<br>~~GO~~||~~——————EE~~<br>~~ee~~<br>~~GO~~|100<br>~~——————EE~~<br>~~ee~~<br>~~GO~~|~~——————EE~~<br>~~ee~~<br>~~GO~~|80<br>~~——————EE~~<br>~~ee~~|~~——————EE~~<br>~~ee~~|mS<br>~~ee~~|
|Common Source Output Conductanceb<br>~~ee~~<br>~~a~~|gos<br>~~ee~~<br>~~GO~~|VDS= 5 V, ID= 0.05 A<br>~~ee~~<br>~~GO~~||0.5<br>~~ee~~<br>~~GO~~|~~ee~~<br>~~GO~~|~~ee~~<br>~~GO~~|~~ee~~|~~ee~~||
|**Dynamic**<br>~~a~~<br>~~GO~~<br>~~GO GO~~<br>~~a]~~<br>~~ee~~<br>~~eeeeeeeeee~~||||||||||
|Input Capacitance<br>~~ee~~<br>~~ee~~|Ciss|VDS= 25 V, VGS= 0 V<br>**f = 1 MHz**||22<br>~~ee~~<br>~~es~~|~~ee~~<br>~~ee~~|60<br>~~ee~~<br>~~ee~~|~~ee~~<br>~~ee~~|50<br>~~ee~~|pF|
|Output Capacitance<br>~~ee~~<br>~~ee~~<br>~~ee~~|Coss|||11<br>~~ee ~~<br>~~es~~<br>~~ee~~|~~ee ~~<br>~~ee~~<br>~~ee~~|25<br> ~~ee ~~<br>~~ee~~<br>~~ee~~|~~ee ~~<br>~~ee~~<br>~~ee~~|25<br> ~~ee~~||
|Reverse Transfer Capacitance<br>~~ee~~<br>~~ee~~|Crss|||2<br>~~es ~~<br>~~ee~~|~~ee ~~<br>~~ee~~|5<br> ~~ee ~~<br>~~ee~~|~~ee~~<br>~~ee~~|5||



Document Number:  70226 S-04279—Rev. F, 16-Jul-01 

www.vishay.com **11-2** 

> **2N7000/2N7002** ~~a~~ **, VQ1000J/P, BS170 Vishay Siliconix** 

**Limits** 2N7000 2N7002 **Parameter Symbol Test Conditions Typ[a] Min Max Min Max Unit** ~~a ———~~ **Switching[d]** Turn-On Time tON **VDD = 15 V, RL = 25** 7 10 Turn-Off Time tOFF ID 0.5 A, VGEN = 10 V, RG = 25 7 10 ~~aee eo | | | | ff~~ ns Turn-On Time tON **VDD = 30 V, RL = 150** 7 20 Turn-Off Time tOFF ID 0.2 A, VGEN = 10 V, RG = 25 11 20 ~~re ee ee ee ee~~ ~~**a** i ER ET~~ 

|SPECIFICATIONS—VQ1000J/PAND BS170 (T, = 25°C UNLESS OTHERWISE NOTED)|SPECIFICATIONS—VQ1000J/PAND BS170 (T, = 25°C UNLESS OTHERWISE NOTED)|SPECIFICATIONS—VQ1000J/PAND BS170 (T, = 25°C UNLESS OTHERWISE NOTED)|SPECIFICATIONS—VQ1000J/PAND BS170 (T, = 25°C UNLESS OTHERWISE NOTED)|SPECIFICATIONS—VQ1000J/PAND BS170 (T, = 25°C UNLESS OTHERWISE NOTED)|SPECIFICATIONS—VQ1000J/PAND BS170 (T, = 25°C UNLESS OTHERWISE NOTED)|SPECIFICATIONS—VQ1000J/PAND BS170 (T, = 25°C UNLESS OTHERWISE NOTED)|SPECIFICATIONS—VQ1000J/PAND BS170 (T, = 25°C UNLESS OTHERWISE NOTED)|SPECIFICATIONS—VQ1000J/PAND BS170 (T, = 25°C UNLESS OTHERWISE NOTED)|SPECIFICATIONS—VQ1000J/PAND BS170 (T, = 25°C UNLESS OTHERWISE NOTED)|
|---|---|---|---|---|---|---|---|---|---|
|**Parameter**<br>~~ee~~|**Symbol**<br>~~ee~~|**Test Conditions**<br>~~ee~~||**Typa**<br>~~ee~~|**Limits**<br>~~ee~~||||**Unit**<br>~~ee~~|
||||||VQ1000J/P<br>~~ee~~||BS170<br>~~ee~~|||
||||||**Min**<br>~~ee~~|**Max**<br>~~ee~~|**Min**<br>~~ee~~|**Max**<br>~~ee~~||
|**Static**<br>~~Sr~~<br>~~Rd~~||||||||||
|Drain-Source Breakdown Voltage<br>~~Sr~~|V(BR)DSS|VGS= 0 V, ID= 100 A<br>~~Rd~~||70<br>~~Rd~~|60<br>~~Rd~~||60||V|
|Gate-Threshold Voltage<br>~~Sr~~<br>~~OO~~|VGS(th)<br>~~OO~~|VDS= VGS, ID= 1 mA<br>~~Rd~~<br>~~OO~~<br>~~ee~~||2.1<br>~~Rd~~<br>~~OO~~|0.8<br>~~Rd~~<br>~~OO~~<br>~~**e**~~|2.5<br>~~OO~~<br>~~**e**ee~~|0.8<br>~~OO~~<br>~~ee~~|3<br>~~OO~~<br>~~ee~~||
|Gate-Body Leakage<br>~~Sr~~|I**GSS**<br>~~a~~|VDS= 0 V, VGS=<br>10 V<br>TJ= 125 C<br>~~Rd~~<br>~~ee~~<br>~~e~~||~~Rd~~<br>~~ee~~|~~Rd~~<br>~~**e**~~|100<br>~~**e**ee~~|~~ee~~|~~ee~~|nA|
||||TJ= 125 C<br>~~ee~~<br>~~e~~|~~e~~<br>~~ee~~|~~**e**~~<br>~~e~~|500<br>~~**e**ee~~|~~ee~~|~~ee~~||
|||VDS= 0 V, VGS=<br>15 V<br>~~ee~~<br>~~ec~~<br>~~a~~||~~ee~~<br>~~ec~~<br>|~~**e**~~<br>~~ec~~<br>|~~**e**ee~~<br>~~ec~~<br>|~~ee~~<br>~~ec~~<br>|10<br>~~ee~~<br>~~ec~~<br>||
|Zero Gate Voltage Drain Current|I**DSS**<br>~~a~~|VDS= 25 V, VGS= 0 V<br>~~a~~||||||0.5<br>|A|
|||VDS= 48 V, VGS= 0 V, TJ= 125 C<br>~~aa~~||~~a~~|~~a~~|500<br>~~a~~|~~a~~|~~a~~||
|||VDS= 60 V, VGS= 0 V||||10||||
|On-State Drain Currentb<br>~~GO~~|ID(on)<br>~~GO~~|VDS= 10  V, VGS= 10 V<br>~~GO~~||1<br>~~GO~~|0.5<br>~~GO~~|~~GO~~|~~GO~~|~~GO~~|A<br>~~GO~~|
|Drain-Source On-Resistanceb<br>~~pf~~|rDS(on)<br>~~pf~~|VGS= 5 V, ID= 0.2 A<br>~~es~~||4<br>~~es~~|~~es~~|7.5<br>~~es~~|~~es~~|~~es~~|~~nr~~|
|||VGS= 10 V, ID= 0.2 A<br>~~nr~~||2.3<br>~~nr~~|~~nr~~|~~nr~~|~~nr~~|5<br>~~nr~~||
|||VGS= 10 V, ID= 0.3 A<br>TJ= 125 C<br>~~nr~~<br>~~ee~~<br>~~e~~<br>~~pf~~||2.3<br>~~nr~~<br>~~ee~~<br>~~es~~|~~nr~~<br>~~ee~~~~**e**~~<br>~~ee~~|5.5<br>~~nr~~<br>~~**e**~~<br>~~ee~~|~~nr~~<br>~~**e**~~|~~nr~~<br>~~**e**~~||
||||TJ= 125 C<br>~~ee~~<br>~~e~~<br>~~pf~~|4.2<br>~~ee~~<br>~~e~~<br>~~es~~<br>~~pf~~|~~ee~~~~**e**~~<br>~~e~~<br>~~ee~~<br>~~pf~~|7.6<br>~~**e**~~<br>~~ee~~<br>~~pf~~|~~**e**~~<br>~~pf~~|~~**e**~~<br>~~pf—~~||
|Forward Transconductanceb<br>~~pf~~|gfs<br>~~pf~~|VDS= 10 V, ID= 0.2 A<br>~~pf~~||~~es ~~<br>~~pf~~|~~ee~~<br>~~pf~~|~~ee~~<br>~~pf~~|100<br>~~pf~~|~~pf—~~|mS|
|||VDS= 10  V, ID= 0.5 A<br>~~pf~~<br>~~es~~||~~pf~~<br>~~es~~|100<br>~~pf~~<br>~~es~~|~~pf~~<br>~~es~~|~~pf~~<br>~~es~~|~~pf—~~<br>~~es~~||
|Common Source Output Conductanceb<br>~~pf~~<br>~~GO~~|gos<br>~~pf~~<br>~~GO~~|VDS=5 V, ID= 0.05 A<br>~~pf~~<br>~~GO~~||0.5<br>~~pf~~<br>~~GO~~|~~pf~~<br>~~GO~~|~~pf~~<br>~~GO~~|~~pf~~<br>~~GO~~|~~pf —~~<br>~~GO~~||
|**Dynamic**<br>~~ee~~<br>~~a~~<br>~~eseeee~~||||||||||
|Input Capacitance<br>~~ee~~<br>~~ee~~<br>~~ee~~|Ciss|VDS=25 V, VGS= 0 V<br>**f = 1 MHz**||22<br>~~a~~<br>~~es~~|~~es~~<br>~~ee~~|60<br>~~ee~~<br>~~ee~~|~~ee~~<br>~~ee~~<br>~~**ee**~~|60<br>~~ee~~|pF|
|Output Capacitance<br>~~ee~~<br>~~ee~~<br>~~ee~~|Coss|||11<br>~~a~~<br>~~es~~<br>~~re~~|~~es ~~<br>~~ee~~<br>~~ee~~|25<br> ~~ee ~~<br>~~ee~~<br>~~ee~~|~~ee~~<br>~~ee~~<br>~~**ee**~~|~~ee~~<br>~~ee~~||
|Reverse Transfer Capacitance<br>~~ee~~<br>~~ee~~|Crss|||2<br>~~es~~<br>~~re~~|~~ee~~<br>~~ee~~|5<br>~~ee~~<br>~~ee~~|~~ee~~<br>~~**ee**~~|~~ee~~<br>~~ee~~||
|**Switchingd**<br>~~**ee**~~<br>~~ee~~<br>~~re ee ee~~<br>~~ee~~||||||||||
|Turn-On Time<br>~~it~~<br>~~ee~~|tON<br>~~it~~<br>~~ee~~|**VDD = 15 V, RL = 23**<br>ID<br>0.6 A, VGEN= 10 V, RG= 25<br>~~it~~<br>~~eo~~<br>~~|~~||7<br>~~|~~<br>~~|~~|~~|~~|10<br>~~|~~|~~|~~|~~|~~|ns|
|Turn-Off Time<br>~~it~~<br>~~ee~~|tOFF<br>~~it~~<br>~~ee~~|||7<br>~~|~~<br>~~|~~|~~|~~|10<br>~~|~~|~~|~~|~~|~~||
|Turn-On Time<br>~~ee~~<br>~~A~~<br>~~a~~|tON<br>~~ee~~<br>~~A~~<br>~~a~~|**VDD = 25 V, RL = 125**<br>ID<br>0.2 A, VGEN= 10 V, RG= 25<br>~~eo~~<br>~~|~~||7<br>~~|~~<br>~~|~~<br>~~a~~|~~|~~<br>~~+~~<br>~~ee~~|~~|~~<br>~~+~~<br>~~ee~~|~~|~~<br>~~+~~<br>~~ee~~|10<br>~~|~~<br>~~+~~<br>~~ee~~||
|Turn-Off Time<br>~~A~~<br>~~a~~|tOFF<br>~~A~~<br>~~a~~|||7<br>~~a~~|~~+~~<br>~~ee~~|~~+~~<br>~~ee~~|~~+~~<br>~~ee~~|10<br>~~+~~<br>~~ee~~||



Notes a. For DESIGN AID ONLY, not subject to production testing. b. Pulse test:  PW < 80 s duty cycle ou < 1%. 

VNBF06 

c. This parameter not re istered with JEDEC. 

d. Switching time is essentially independent of operating temperature. 

Document Number:  70226 S-04279—Rev. F, 16-Jul-01 

www.vishay.com 

**11-3** 

**2N7000/2N7002, VQ1000J/P, BS170** ~~ae~~ **Vishay Siliconix** 

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Output Characteristics Transfer Characteristics<br>1.0 1.0<br>6.5 V<br>VGS = 10, 9, 8, 7 V<br>0.8 6 V 0.8<br>TJ = –55 C<br>5.5 V 25 C<br>0.6 fj 0.6 FELLA<br>_{e_— fi fl<br>5 V<br>125 C<br>0.4 0.4<br>| 4.5 V pf<br>4 V<br>0.2 0.2<br>fL-—— 3.5 V fe<br>3 V 2.5 V<br>0.0 = 2, 1 V 0.0 TLY Ltt<br>0 1 2 3 4 5 6 0 1 2 3 4 5 6 7 8<br>VDS  –  Drain-to-Source Voltage (V) VGS  –  Gate-to-Source Voltage (V)<br>On-Resistance vs. Drain Current Capacitance<br>7 60<br>VGS = 0  V<br>f = 1 MHz<br>6 50 tT EE |<br>rDS @ 5 V = VGS<br>5<br>40 aaa<br>4<br>30<br>ee<br>3 r DS  @ 10 V = V GS Ciss<br>20 Ye<br>2 Coss<br>10 \ oe<br>1<br>Crss<br>0 0 ™s——>—<br>0.0 0.2 0.4 0.6 0.8 1.0 0 5 10 15 20 25 30 35<br>ID  –  Drain Current (A) VDS  –  Drain-to-Source Voltage (V)<br>Gate Charge On-Resistance vs. Junction Temperature<br>20 2.0<br>ID = 0.5 A<br>16 VGS = 10 V, rDS @ 0.5 A<br>1.5<br>LY<br>12<br>VDS = 30  V<br>1.0<br>8 See VGS = 5 V, r  ane DS @ 0.05 A<br>0.5 aT Lt<br>4<br>0 0.0 LELLELLI<br>0 400 800 1200 1600 2000 2400 –55 –30 –5 20 45 70 95 120 145<br>Qg  –  Total Gate Charge (pC) TJ – Junction Temperature ( C)<br>– Drain Current (A) – Drain Current (A)<br>ID  ID<br>Ω )<br> – On-Resistance (<br>rDS(on) C – Capacitance (pF)<br>Ω )<br>Normalized)(<br> – On-Resistance (<br> – Gate-to-Source Voltage (V) rDS(on)<br>GS<br>V<br>**----- End of picture text -----**<br>


Document Number:  70226 S-04279—Rev. F, 16-Jul-01 

www.vishay.com 

**11-4** 

> **2N7000/2N7002** ~~a~~ **, VQ1000J/P, BS170 Vishay Siliconix** 

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Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage<br>1.000 6<br>re ee ee 4 Ae ee ee 5 ID = 50 mA<br>TJ = 125 C<br>0.100 4 500 mA<br>—) f ife =n Baan<br>3<br>SSS SSS ENGEL<br>TJ = 25 C<br>0.010 2<br>i f-] | -<br>ffa ee ee ee ee ee 1 LEE LEE<br>0.001 PT 0 LET<br>EL ETE LI<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 2 4 6 8 10 12 14 16 18 20<br>VSD  –  Source-to-Drain Voltage (V) VGS – Gate-to-Source Voltage (V)<br>Ω )<br> – On-Resistance (<br>– Source Current (A)<br>IS  rDS(on)<br>**----- End of picture text -----**<br>


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Threshold Voltage<br>0.50<br>ID = 250 A<br>0.25 it o<br>–0.00 ne~~ Se<br>–0.25 Fata.a San<br>–0.50 TELS<br>–0.75<br>–50 –25 0 25 50 75 100 125 150<br> – Variance (V)<br>GS(th)<br>V<br>**----- End of picture text -----**<br>


**Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA, BS170 Only)** 

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1 SSS =ae<br>Duty Cycle = 0.5<br>SS... ee<br>a ee OE a mes ee ee ws OD a ee ee<br>a OO OO Oe OO OO ee ee<br>0.2<br>e e = —— - 2 LTE LLIT<br>0.1 Notes:<br>S e eer I it<br>0.05<br>0.1 PDM<br>— 0.02 eet IE Nene ll<br>ae ee et CH<br>LesserAKPAT | 0.01 tii| TyPTTTTTTETEE ET TTT TT 1. Duty Cycle, D =2. Per Unit Base = R | t1  | t2 ~ thJAtt12  = 156 C/W anTTTUT<br>3. TJM – TA = PDMZthJA [(t)]<br>Single Pulse<br>0.01<br>0.1 1 10 100 1 K 10 K<br>t1 – Square Wave Pulse Duration (sec)<br>Thermal Impedance<br>Normalized Effective Transient<br>**----- End of picture text -----**<br>


Document Number:  70226 S-04279—Rev. F, 16-Jul-01 

www.vishay.com 

**11-5** 

**Legal Disclaimer Notice** 

Vishay 

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## **Disclaimer** 

All product specifications and data are subject to change without notice. 

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. 

Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. 

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. 

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. 

Product names and markings noted herein may be trademarks of their respective owners. 

Document Number: 91000 Revision: 18-Jul-08 

www.vishay.com 1 



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---

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