# Power MOSFET, N Channel, 60 V, 200 mA, 5 ohm, SOT-23, Surface Mount

![Product image](https://novapart.co/image/farnell:1856804/)

**URL**: https://novapart.co/products/2N7000CSM/power-mosfet-n-channel-60-v-200-ma-5-ohm-sot-23
**SKU**: 2N7000CSM
**Manufacturer**: TT ELECTRONICS / SEMELAB
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €8.2900
**Stock**: 10+

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:200mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):5ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:800mV; Pow

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 300mW |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | SOT-23 |
| Drain Source Voltage Vds | 60V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 200mA |
| Drain Source On State Resistance | 5ohm |
| Gate Source Threshold Voltage Max | 800mV |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1856804/)

## **2N7000CSM** 

**==> picture [70 x 38] intentionally omitted <==**

## **MECHANICAL DATA** 

Dimensions in mm (inches) 

**==> picture [260 x 171] intentionally omitted <==**

**----- Start of picture text -----**<br>
0.51 ± 0.10<br>(0.02 ± 0.004) 0.31 rad.<br>(0.012)<br>3<br>2 1<br>1.91 ± 0.10<br>(0.075 ± 0.004) A<br>0.31<br>3.05 ± 0.13 (0.012) [rad.]<br>(0.12 ± 0.005) 1.40<br>(0.055)<br>A = 1.02 ± 0.10 max.<br>(0.04 ± 0.004)<br>2.54 ± 0.13<br>(0.10 ± 0.005)<br>0.76 ± 0.15<br>(0.03 ± 0.006)<br>**----- End of picture text -----**<br>


## **N–CHANNEL ENHANCEMENT MODE MOS TRANSISTOR** 

## **FEATURES** 

- **V(BR)DSS = 60V** 

- **RDS(ON) = 5** Ω 

- **I D = 200mA** 

- **Hermetic Ceramic Surface Mount package** 

**SOT23 CERAMIC (LCC1 PACKAGE)** 

- **Screening Options Available** 

## **Underside View** 

PAD 1 – Gate PAD 2 – Source PAD 3 – Drain 

## **ABSOLUTE MAXIMUM RATINGS** (TCASE = 25°C unless otherwise stated) 

|VDS<br>Drain – Source Voltage<br>VGS<br>Gate – Source Voltage<br>ID<br>Drain Current<br>@ TCASE= 25°C<br>IDM<br>Pulsed Drain Current *<br>PD<br>Power Dissipation<br>@ TCASE= 25°C<br>Tj<br>Operating Junction Temperature Range<br>Tstg<br>Storage Temperature Range|60V<br>±40V<br>200mA<br>500mA<br>300mW<br>–55 to 150°C<br>–55 to 150°C||
|---|---|---|



* Pulse width limited by maximum junction temperature. 

**Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders.** 

**Semelab plc.** Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk 

Document Number 7022 Issue: 1 

## **2N7000CSM** 

**==> picture [70 x 38] intentionally omitted <==**

## **ELECTRICAL CHARACTERISTICS** (TCASE = 25°C unless otherwise stated) 

**==> picture [539 x 354] intentionally omitted <==**

**----- Start of picture text -----**<br>
Parameter Test Conditions Min. Typ. Max. Unit<br>STATIC CHARACTERISTICS<br>V(BR)DSS Drain – Source Breakdown Voltage VGS = 0V ID = 10μA 60 70<br>V<br>VGS(th) Gate Threshold Voltage VDS = VGS ID = 0.25mA 0.8 3.0<br>IGSS Gate – Body Leakage Current VGS = ±20V VDS = 0V -10 nA<br>VDS = 60V VGS = 0V 1.0 μA<br>IDSS Zero Gate Voltage Drain Current<br>TCASE = 125°C 1.0 mA<br>ID(on)* On–State Drain Current VDS≥2VDS(ON) VGS = 4.5V 75 mA<br>VGS = 10V 5<br>R Drain – Source On Resistance Ω<br>DS(on)*<br>ID = 0.5A TCASE = 125°C 9<br>VGS = 4.5V ID = 75mA 0.4<br>VDS(on)* Drain – Source On Voltage V<br>VGS = 10V ID = 0.5A 2.5<br>gFS* Forward Transconductance VGS = 10V ID = 0.5A 100 ms<br>DYNAMIC CHARACTERISTICS<br>Ciss Input Capacitance VDS = 25V 60<br>Coss Output Capacitance VGS = 0V 25 pF<br>Crss Reverse Transfer Capacitance f = 1MHz 5<br>SWITCHING CHARACTERISTICS<br>tON Turn–On Time VDD = 30V VGEN = 10V 10<br>RL = 150Ω RG = 25Ω ns<br>tOFF Turn–Off Time ID = 0.2A 10<br>**----- End of picture text -----**<br>


* Pulse Test:  PW = 80 μs , δ ≤ 1% 

|**Parameter**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|
|RθJA<br>Thermal Resistance, Junction to Ambient|||416|°C/W|



**Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders.** 

**Semelab plc.** Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk 

Document Number 7022 Issue: 1 



## Links

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- [Supplier page](https://es.farnell.com/tt-electronics-semelab/2n7000csm/mosfet-hi-rel-n-ch-60v-0-2a-lcc1/dp/1856804)
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