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2N6661
Power MOSFET, Vertical DMOS FET, N Channel, 90 V, 1.5 A, 4 ohm, TO-39, Through Hole
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- Manufacturer: MICROCHIP
- Product type: Single MOSFETs
- Transistor Polarity:N Channel; Continuous Drain Current Id:1.5A; Drain Source Voltage Vds:90V; On Resistance Rds(on):4ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power D
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (04-Feb-2026)
- No. of Pins: 3Pins
- Channel Type: N Channel
- Product Range: -
- Qualification: -
- Power Dissipation: 6.25W
- Transistor Mounting: Through Hole
- Rds(on) Test Voltage: 10V
- Transistor Case Style: TO-39
- Drain Source Voltage Vds: 90V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 1.5A
- Drain Source On State Resistance: 4ohm
- Gate Source Threshold Voltage Max: 2V
| Delivery and price | |
|---|---|
| Units per pack | 500 |
| Price | 10.72 € |
| Current stock | 200+ |
| Lead time | 30 days |
Datasheet
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Updated at April 29, 2026