# Bipolar (BJT) Single Transistor, General Purpose, PNP, 140 V, 16 A, 150 W, TO-3, Through Hole
**URL**: https://novapart.co/products/2N6609/bipolar-bjt-single-transistor-general-purpose-pnp
**SKU**: 2N6609
**Manufacturer**: MULTICOMP PRO
**Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Single Bipolar Junction Transistors - BJT
**Price**: €0.5750
**Stock**: 10+
## Specifications
| Parameter | Value |
|---|---|
| No. Of Pins | 2Pins |
| Power Dissipation | 150W |
| Dc Current Gain Hfe | 60hFE |
| Transistor Mounting | Through Hole |
| Transistor Polarity | PNP |
| Transistor Case Style | TO-3 |
| Dc Current Gain Hfe Min | 60hFE |
| Operating Temperature Max | 200°C |
| Continuous Collector Current | 16A |
| Collector Emitter Voltage Max | 140V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:1165913/)
## **Transistor, PNP TO-3**
## **Description:**
Complementary silicon power transistors.
The 2N6609 powerbaseTM power transistors designed for high power audio, disk head positioners and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid drivers, DC-DC converters or inverters.
## **Features:**
- Pb-free packages
- High safe operating area (100% tested) 150W at 100V
- Completely characterized for linear operation
- High DC current gain and low saturation voltage
- hFE = 15 (min.) at 8A, 4V
- VCE (sat) = 1.4V (max.) at IC = 8A, IB = 0.8A
- For low distortion complementary designs
## **Maximum Ratings**
|**Maximum Ratings**||||
|---|---|---|---|
|**Rating**|**Symbol**|**Value**|**Unit**|
|Collector-Emitter Voltage|VCEO|140|V DC|
|Collector-Emitter Voltage|VCEX|160||
|Collector-Base Voltage|VCBO|||
|Emitter-Base Voltage|VEBO|7||
|Collector Current - Continuous
- Peak(Note 2)|IC|16
30|A DC|
|Base Current - Continuous
- Peak(Note 2)|IB|4
15||
|Total Power Dissipation at TA= 25°C
Derate above 25°C|PD|150
0.855|W
W/°C|
|Operating and Storage Junction Temperature Range|TJ, TStg|-65 to +200|°C|
## **Thermal Characteristics**
|**Thermal Characteristics**||||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Max.**|**Unit**|
|Thermal Resistance Junction to Case|RθJC|1.17|°C/W|
Max. ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.
1. Indicates JEDEC Registered Data.
2. Pulse Test: Pulse Width = 5ms, Duty Cycle ≤10%.
Newark.com/multicomp-pro Farnell.com/multicomp-pro Element14.com/multicomp-pro
17/09/19 V1.0
Page <1>
## **Transistor, PNP TO-3**
## **Electrical Characteristics (TC = 25°C unless otherwise noted)**
|**Characteristic**|**Symbol**|**Min.**|**Max.**|**Unit**|
|---|---|---|---|---|
|**OffCharacteristics(Note 3)**|||||
|Collector-Emitter Breakdown Voltage (Note 4)
(lC= 0.2A DC, lB= 0)|VEO (sus)|140|-|V DC|
|Collector-Emitter Sustaining Voltage (Note 4)
(lC= 0.1A DC, VBE(off) = 1.5V DC, RBE= 100Ω)|VCEX (sus)|160|-||
|Collector-Emitter Sustaining Voltage
(lC= 0.2A DC, RBE= 100Ω)|VCER (sus)|150|-||
|Collector Cut off Current (Note 4)
(VCE= 120V DC, IB= 0)|ICEO|-|10|mA DC|
|Collector Cut off Current (Note 4)
(VCE= 140V DC VBE (off)= 1.5V dc)
(VCE= 140V DC VBE (off)= 1.5V DC, TC= 150°C)|ICEX|-|2
10||
|Collector Cut off Current
(VCB= 140V DC, IE= 0)|ICBO|-|2||
|Emitter Cut off Current (Note 4)
(VBE= 7V DC, IC= 0)|IEBO|-|5||
|**OnCharacteristic(Note 3)**|||||
|DC Current Gain
(lC= 8A DC, VCE= 4V DC) (Note 4)
(lC= 16A DC, VCE= 4V DC)|hFE|15
5|60
-|-|
|Collector-Emitter Saturation Voltage
(lC= 8A DC, IB= 800mA DC) (Note 4)
(lC= 16A DC, IB= 3.2A DC)|VCE (sat)|-|1.4
4|V DC|
|Base-Emitter On Voltage (Note 4)
(lC= 8A DC, VCE= 4V DC)|VBE (on)|-|2.2||
|**DynamicCharacteristics**|||||
|Magnitude of Common-Emitter
Small-Signal, Short-Circuit, Forward Current Transfer Ratio
(lC= 1A, f = 50kHz)|hfe|4|-|-|
|Small-Signal Current Gain (Note 4)
(IC= 1A DC, VCE= 4V DC, f = 1kHz)|hfe|40|-|-|
|**SecondBreakdown Characteristics**|||||
|Second Breakdown Collector Current with Base Forward Biased
t = 1s(non-repetitive), VCE= 100V|IS/b|1.5|-|A DC|
## **Note:**
3. Pulse Test : Pulse Width = 300μs, Duty Cycle ≤2%.
4. Indicates JEDEC Registered Data.
Newark.com/multicomp-pro Farnell.com/multicomp-pro Element14.com/multicomp-pro
17/09/19 V1.0
Page <2>
## **Transistor, PNP TO-3**
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DC Current Gain Collector Saturation Region
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IC, Collector Current (Amperes) IB, Base Current (Amperes) Base Current (Amperes)
(Volts)
DC Current Gain
FE,
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CE,
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**----- Start of picture text -----**
IB, Base Current (Amperes)
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" On " Voltage
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TC, Case Temperature (°C)
V, Voltage (Volts)
Power Derating Factor (%)
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**Active Region Safe Operating Area**
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**----- Start of picture text -----**
Collector Current (Amperes)
IC,
**----- End of picture text -----**
**==> picture [157 x 11] intentionally omitted <==**
**----- Start of picture text -----**
VCE, Collector-Emitter Voltage (Volts)
**----- End of picture text -----**
There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation: i.e., the transistor must not be subjected to greater dissipation than the curves indicate.
The data is based on TJ (pk) = 200°C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ (pk) <200°C. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.
Newark.com/multicomp-pro Farnell.com/multicomp-pro Element14.com/multicomp-pro
17/09/19 V1.0
Page <3>
## **Transistor, PNP TO-3**
## **Dimensions:**
|**Dimensions**|**Min.**|**Max.**|
|---|---|---|
|A|1.55 (39.37) Reference||
|B|-|1.05 (26.67)|
|C|0.25 (6.35)|0.335 (8.51)|
|D|0.038 (0.97)|0.043 (1.09)|
|E|0.055 (1.4)|0.07 (1.77)|
|G|0.43 (10.92) BSC||
|H|0.215 (5.46) BSC||
|K|0.44 (11.18)|0.48 (12.19)|
|L|0.665 (16.89) BSC||
|N|-|0.83 (21.08)|
|Q|0.151 (3.84)|0.165 (4.19)|
|U|1.187 (30.15) BSC||
|V|0.131 (3.33)|0.188 (4.77)|
**Pin Configuration:** Pin 1. Base 2. Emitter Collector (Case)
Dimensions : Inches (Millimetres)
## **Part Number Table**
|**Description**|**Part Number**|
|---|---|
|Transistor, PNP, TO-3|2N6609|
**Important Notice :** This data sheet and its contents (the “Information”) belong to the members of the AVNET group of companies (the “Group”) or are licensed to it. No licence is granted for the use of it other than for information purposes in connection with the products to which it relates. No licence of any intellectual property rights is granted. The Information is subject to change without notice and replaces all data sheets previously supplied. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any error in or omission from it or for any use made of it. Users of this data sheet should check for themselves the Information and the suitability of the products for their purpose and not make any assumptions based on information included or omitted. Liability for loss or damage resulting from any reliance on the Information or use of it (including liability resulting from negligence or where the Group was aware of the possibility of such loss or damage arising) is excluded. This will not operate to limit or restrict the Group’s liability for death or personal injury resulting from its negligence. Multicomp Pro is the registered trademark of Premier Farnell Limited 2019.
Newark.com/multicomp-pro Farnell.com/multicomp-pro Element14.com/multicomp-pro
17/09/19 V1.0
Page <4>
## Links
- [View this product on Novapart](https://novapart.co/products/2N6609/bipolar-bjt-single-transistor-general-purpose-pnp)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/en-ES/multicomp-pro/2n6609/transistor-pnp-to-3/dp/1165913)
---
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