# Bipolar (BJT) Single Transistor, NPN, 400 V, 15 A, 175 W, TO-3, Through Hole

![Product image](https://novapart.co/image/farnell:1165898/)

**URL**: https://novapart.co/products/2N6547/bipolar-bjt-single-transistor-npn-400-v-15-a-175-w
**SKU**: 2N6547
**Manufacturer**: MULTICOMP PRO
**Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Single Bipolar Junction Transistors - BJT
**Price**: €2.6200
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 2Pins |
| Power Dissipation | 175W |
| Dc Current Gain Hfe | 60hFE |
| Transistor Mounting | Through Hole |
| Transistor Polarity | NPN |
| Transition Frequency | 3MHz |
| Transistor Case Style | TO-3 |
| Dc Current Gain Hfe Min | 60hFE |
| Operating Temperature Max | 200°C |
| Continuous Collector Current | 15A |
| Collector Emitter Voltage Max | 400V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1165898/)

## **Transistor, NPN TO-3** 

## **Description:** 

The 2N6547 transistor is designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for 115 and 220V line operated switch-mode applications. 

## **Features:** 

- High  temperature performance specified for: Reversed biased SOA with inductive loads. Switching time with inductive loads. Saturation voltages. Leakage currents. 

## **Applications:** 

Switching regulators. PWM inverters and motor controls. Solenoid and relay drivers. Deflection circuits. 

## **Maximum Ratings** 

|**Maximum Ratings**||||
|---|---|---|---|
|**Rating**|**Symbol**|**Value**|**Unit**|
|Collector-Emitter Voltage|VCEO (SUS)|400|V DC|
|Collector-Emitter Voltage|VCEX (SUS)|450||
|Collector-Emitter Voltage|VCEV|850||
|Emitter-Base Voltage|VEB|9||
|Collector Current  - Continuous<br>- Peak|IC<br>ICM|15<br>30|A DC|
|Base Current  - Continuous<br>- Peak|IB<br>IBM|10<br>20||
|Emitter Current  - Continuous<br>- Peak|IE<br>IEM|25<br>35||
|Total Power Dissipation<br>at TC= 25°C<br>at TC= 100°C<br>Derate above 25°C|PD|175<br>100<br>1|W<br>W/°C|
|Operating and Storage Junction Temperature Range|TJTstg|-65 to +200|°C|



## **Thermal Characteristics** 

|**Thermal Characteristics**||||
|---|---|---|---|
|**Characteristics**|**Symbol**|**Max.**|**Unit**|
|Thermal Resistance Junction to Case|RθJC|1|°C/W|
|Max. Lead Temperature for Soldering Purposes 1/8ʺ<br>from Case for 5 Seconds|TL|275|°C|



Newark.com/multicomp-pro Farnell.com/multicomp-pro Element14.com/multicomp-pro 

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## **Transistor, NPN TO-3** 

## **Electrical Characteristics (TC = 25°C unless otherwise noted)** 

|**Characteristic**|**Symbol**|**Min.**|**Max.**|**Unit**|
|---|---|---|---|---|
|**OffCharacteristics(1)**|||||
|Collector-Emitter Sustaining Voltage<br>(lC= 100mA, lB= 0)|VEO (sus)|400|-|V DC|
|Collector-Emitter Sustaining Voltage<br>(IC= 8A, Vclamp= Rated VCEX, TC= 100°C)<br>(IC= 15A, Vclamp= Rated VCEO= 100V, TC= 100°C)|VCEX (sus)|450<br>300|-||
|Collector Cut off Current<br>(VCEV= Rated Value, VBE (off)= 1.5V DC)<br>(VCEV= Rated Value, VBE (off)= 1.5V DC, TC= 100°C)|ICEV|-|1<br>4|mA DC|
|Collector Cut off Current<br>(VCE= Rated VCEV, RBE, = 50Ω, TC= 100°C)|ICER|-|5||
|Emitter Cut off Current<br>(VEB= 9V DC, IC= 0)|IERO|-|1||
|**SecondBreakdown**|||||
|Second Breakdown Collector Current with Base Forward Biased<br>t = 1s(Non-repetitive) (VCE= 100V DC)|IS/b|0.2|-|A DC|
|**OnCharacteristic(1)**|||||
|DC Current Gain<br>(lC=  5A DC, VCE= 2V DC) (lC= 10A DC, VCE= 2V DC)|hFE|12<br>6|60<br>30|-|
|Collector-Emitter Saturation Voltage<br>(lC= 10A DC, IB= 2A DC)<br>(lC= 15A DC, IB= 3A DC)<br>(lC= 10A DC, IB= 2A DC, TC= 100°C)|VCE (sat)|-|1.5<br>5<br>2.5|V DC|
|Base-Emitter Saturation Voltage<br>(lC= 10A DC, IB= 2A DC)<br>(lC= 10A DC, IB= 2A DC, TC= 100°C|VBE (sat)|-|1.6||
|**DynamicCharacteristics**|||||
|Current-Gain-Bandwidth Product<br>(lC= 500mA DC, VCE= 10V DC, ftest= 1MHz)|fT|6|28|MHz|
|Output Capacitance<br>(VCB= 10V DC, IE= 0, ftest= 1MHz)|Cob|125|500|pF|



Indicates JEDEC Registered Data. 

(1) Pulse Test: Pulse Width = 300μs, Duty Cycle = 2%. 

Newark.com/multicomp-pro Farnell.com/multicomp-pro Element14.com/multicomp-pro 

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## **Transistor, NPN TO-3** 

## **Switching Characteristics** 

|**Switching Characteristics**|**Switching Characteristics**|**Switching Characteristics**|**Switching Characteristics**|**Switching Characteristics**|**Switching Characteristics**|
|---|---|---|---|---|---|
|Resistive Load||||||
|DelayTime|(VCC= 250V, IC= 10A,<br>IB1= IB2= 2A, tp= 100µS,<br>Duty Cycle ≤2%|td|-|0.05|µs|
|Rise Time||tr|-|1||
|Storage Time||ts|-|4||
|Fall Time||tf|-|0.7||
|Inductive Load, Clamped||||||
|Storage Time|(IC= 10A (pk), Vclamp= Rated VCEX, IB1= 2A,<br>VBE (off)= 5V DC, TC= 100°C)|ts|-|5|µs|
|Fall Time||tf|-|1.5||
|Storage Time|(IC= 10A (pk), Vclamp= Rated VCEX, IB1= 2A,<br>VBE (off)= 5V DC, TC= 25°C)|ts|Typical 2||µs|
|Fall Time||tf|Typical 0.09|||



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## **Transistor, NPN TO-3** 

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**Forward Bias Safe Operating Area** 

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There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable 

operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. 

The data is based on TC = 25°C; TJ (pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC ≥25°C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown may be found at any case temperature by using the appropriate curve.TJ (pk) may be calculated from the data. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 

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## **Transistor, NPN TO-3** 

## **Thermal Response** 

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## **Dimensions** 

## **TO-204 (TO-3)** 

|**Dim.**|**Min.**|**Max.**|
|---|---|---|
|A|1.55(39.37)Reference||
|B|-|1.05(26.67)|
|C|0.25(6.35)|0.335(8.51)|
|D|0.038(0.97)|0.043(1.09)|
|E|0.055(1.4)|0.07(1.77)|
|G|0.43(10.92)BSC||
|H|0.215(5.46)BSC||
|K|0.44(11.18)|0.48(12.19)|
|L|0.665(16.89)BSC||
|N|-|0.83(21.08)|
|Q|0.151(3.84)|0.165(4.19)|
|U|1.187(30.15)BSC||
|V|0.131(3.33)|0.188(4.77)|



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Pin Configuration<br>Pin 1. Base<br>2.  Emitter<br>Collector (Case)<br>**----- End of picture text -----**<br>


## **Part Number Table** 

|**Description**|**Part Number**|
|---|---|
|Transistor, NPN, TO-3|2N6547|



**Important Notice :** This data sheet and its contents (the “Information”) belong to the members of the AVNET group of companies (the “Group”) or are licensed to it. No licence is granted for the use of it other than for information purposes in connection with the products to which it relates. No licence of any intellectual property rights is granted. The Information is subject to change without notice and replaces all data sheets previously supplied. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any error in or omission from it or for any use made of it. Users of this data sheet should check for themselves the Information and the suitability of the products for their purpose and not make any assumptions based on information included or omitted. Liability for loss or damage resulting from any reliance on the Information or use of it (including liability resulting from negligence or where the Group was aware of the possibility of such loss or damage arising) is excluded. This will not operate to limit or restrict the Group’s liability for death or personal injury resulting from its negligence. Multicomp Pro is the registered trademark of Premier Farnell Limited 2019. 

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- [Supplier page](https://es.farnell.com/en-ES/multicomp-pro/2n6547/transistor-npn-to-3/dp/1165898)
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