# Bipolar (BJT) Single Transistor, NPN, 350 V, 500 mA, 1.5 W, TO-92, Through Hole

![Product image](https://novapart.co/image/farnell:2825078/)

**URL**: https://novapart.co/products/2N6517BU/bipolar-bjt-single-transistor-npn-350-v-500-ma-15
**SKU**: 2N6517BU
**Manufacturer**: ONSEMI
**Price**: €0.0660
**Stock**: 1000+
**Lead Time**: 64 days (indicative)

## Description

Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:350V; Transition Frequency ft:200MHz; Power Dissipation Pd:1.5; Available until stocks are exhausted Alternative available

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (15-Jan-2018) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 1.5W |
| Transistor Mounting | Through Hole |
| Transistor Polarity | NPN |
| Transition Frequency | 200MHz |
| Transistor Case Style | TO-92 |
| Dc Current Gain Hfe Min | 15hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 500mA |
| Collector Emitter Voltage Max | 350V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2825078/)

## NPN − 2N6515, 2N6517; PNP − 2N6520 

## High Voltage Transistors **NPN and PNP** 

## **Features** 

## **http://onsemi.com** 

- Voltage and Current are Negative for PNP Transistors 

• These are Pb−Free Devices* COLLECTOR 3 2 **MAXIMUM RATINGS** BASE COLLECTOR **NPN Rating Symbol Value Unit** ‘ 3 1 Collector − Emitter Voltage VCEO Vdc EMITTER 2N6515 250 2 2N6517, 2N6520 350 BASE Collector − Base Voltage VCBO Vdc **PNP** 2N6515 250 2N6517, 2N6520 350 &) 1 EMITTER Emitter − Base Voltage VEBO Vdc 2N6515, 2N6517 6.0 2N6520 5.0 Base Current IB 250 mAdc **TO−92** Collector Current − Continuous IC 500 mAdc **CASE 29** Total Device Dissipation @ TA = 25 ° C PD 625 mW **STYLE 1** Derate above 25 ° C 5.0 mW/ ° C Derate above 25Total Device Dissipation @ T ° C C = 25 ° C PD 1.512 mW/W ° C 1 23 1 2 3 Operating and Storage Junction TJ, Tstg −55 to +150 ° C STRAIGHT LEADBULK PACK TAPE & REELBENT LEAD Temperature Range ~~on~~ AMMO PACK **THERMAL CHARACTERISTICS Characteristic Symbol Max Unit MARKING DIAGRAM** Thermal Resistance, Junction−to−Ambient R JA 200 ° C/W Thermal Resistance, Junction−to−Case R JC 83.3 ° C/W 

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 

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**----- Start of picture text -----**<br>
2N<br>65xx<br>AYWW<br>**----- End of picture text -----**<br>


xx = 15, 17, or 20 A = Assembly Location Y = Year WW = Work Week = Pb−Free Package 

(Note: Microdot may be in either location) 

> *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

## **ORDERING INFORMATION** 

See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. 

Publication Order Number: **2N6515/D** 

**1** 

© Semiconductor Components Industries, LLC, 2007 **March, 2007 − Rev. 5** 

**NPN − 2N6515, 2N6517; PNP − 2N6520** 

**ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) 

|**ELECTRICAL CHARACTERISTICS**(TA= 25°C unless otherwise noted)|||||
|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Max**|**Unit**|
|**OFF CHARACTERISTICS**|||||
|Collector−Emitter Breakdown Voltage (Note 1)<br>(IC= 1.0 mAdc, IB= 0)<br>2N6515<br>2N6517, 2N6520|V(BR)CEO|250<br>350|−<br>−|Vdc|
|Collector−Base Breakdown Voltage<br>(IC= 100�Adc, IE= 0 )<br>2N6515<br>2N6517, 2N6520|V(BR)CBO|250<br>350|−<br>−|Vdc|
|Emitter−Base Breakdown Voltage<br>(IE= 10�Adc, IC= 0)<br>2N6515, 2N6517<br>2N6520|V(BR)EBO|6.0<br>5.0|−<br>−|Vdc|
|Collector Cutoff Current<br>(VCB= 150 Vdc, IE= 0)<br>2N6515<br>(VCB= 250 Vdc, IE= 0)<br>2N6517, 2N6520|ICBO|−<br>−|50<br>50|nAdc|
|Emitter Cutoff Current<br>(VEB= 5.0 Vdc, IC= 0)<br>2N6515, 2N6517<br>(VEB= 4.0 Vdc, IC= 0)<br>2N6520|IEBO|−<br>−|50<br>50|nAdc|
|**ON CHARACTERISTICS**(Note 1)|||||
|DC Current Gain<br>(IC= 1.0 mAdc, VCE= 10 Vdc)<br>2N6515<br>2N6517, 2N6520<br>(IC= 10 mAdc, VCE= 10 Vdc)<br>2N6515<br>2N6517, 2N6520<br>(IC= 30 mAdc, VCE= 10 Vdc)<br>2N6515<br>2N6517, 2N6520<br>(IC= 50 mAdc, VCE= 10 Vdc)<br>2N6515<br>2N6517, 2N6520<br>(IC= 100 mAdc, VCE= 10 Vdc)<br>2N6515<br>2N6517, 2N6520|hFE|35<br>20<br>50<br>30<br>50<br>30<br>45<br>20<br>25<br>15|−<br>−<br>−<br>−<br>300<br>200<br>220<br>200<br>−<br>−|−|
|Collector−Emitter Saturation Voltage<br>(IC= 10 mAdc, IB= 1.0 mAdc)<br>(IC= 20 mAdc, IB= 2.0 mAdc)<br>(IC= 30 mAdc, IB= 3.0 mAdc)<br>(IC= 50 mAdc, IB= 5.0 mAdc)|VCE(sat)|−<br>−<br>−<br>−|0.30<br>0.35<br>0.50<br>1.0|Vdc|
|Base−Emitter Saturation Voltage<br>(IC= 10 mAdc, IB= 1.0 mAdc)<br>(IC= 20 mAdc, IB= 2.0 mAdc)<br>(IC= 30 mAdc, IB= 3.0 mAdc)|VBE(sat)|−<br>−<br>−|0.75<br>0.85<br>0.90|Vdc|
|Base−Emitter On Voltage<br>(IC= 100 mAdc, VCE= 10 Vdc)|VBE(on)|−|2.0|Vdc|
|**SMALL−SIGNAL CHARACTERISTICS**|||||
|Current−Gain − Bandwidth Product (Note 1)<br>(IC= 10 mAdc, VCE= 20 Vdc, f = 20 MHz)|fT|40|200|MHz|
|Collector−Base Capacitance<br>(VCB= 20 Vdc, IE= 0, f = 1.0 MHz)|Ccb|−|6.0|pF|
|Emitter−Base Capacitance<br>(VEB= 0.5 Vdc, IC= 0, f = 1.0 MHz)<br>2N6515, 2N6517<br>2N6520|Ceb|−<br>−|80<br>100|pF|
|**SWITCHING CHARACTERISTICS**|||||
|Turn−On Time<br>(VCC= 100 Vdc, VBE(off)= 2.0 Vdc, IC= 50 mAdc, IB1= 10 mAdc)|ton|−|200|�s|
|Turn−Off Time<br>(VCC= 100 Vdc, IC= 50 mAdc, IB1= IB2= 10 mAdc)|toff|−|3.5|�s|



1. Pulse Test: Pulse Width ≤ 300 � s, Duty Cycle ≤ 2.0%. 

**http://onsemi.com** 

**2** 

**NPN − 2N6515, 2N6517; PNP − 2N6520** 

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**----- Start of picture text -----**<br>
200<br>VCE = 10 V TJ = 125°C<br>100 25°C<br>70<br>−�55°C<br>50<br>30<br>20<br>1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100<br>IC, COLLECTOR CURRENT (mA)<br>hFE, DC CURRENT GAIN<br>**----- End of picture text -----**<br>


**Figure 1. DC Current Gain NPN 2N6515** 

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200 200<br>VCE = 10 V TJ = 125°C VCE = −10 V TJ = 125°C<br>100 100<br>25°C 25°C<br>70 70<br>−�55°C<br>50 50<br>−�55 °C<br>30 30<br>20 20<br>10 10<br>1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 −1.0 −�2.0 −�3.0 −�5.0 −�7.0 −10 −�20 −�30 −�50 −�70 −100<br>IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>Figure 2. DC Current Gain Figure 3. DC Current Gain<br>NPN 2N6517 PNP 2N6520<br>100 100<br>70 70<br>50 50<br>TJ = 25°C TJ = 25°C<br>30 VCE = 20 V 30 VCE = −�20 V<br>f = 20 MHz f = 20 MHz<br>20 20<br>10 10<br>1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 −1.0 −�2.0 −�3.0 −�5.0 −�7.0 −10 −�20 −�30 −�50 −�70 −100<br>IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN<br>f�, CURRENT−GAIN � BANDWIDTH PRODUCT (MHz)T f�, CURRENT−GAIN � BANDWIDTH PRODUCT (MHz)T<br>**----- End of picture text -----**<br>


**Figure 4. Current−Gain − Bandwidth Product NPN 2N6515, 2N6517** 

**Figure 5. Current−Gain − Bandwidth Product PNP 2N6520** 

**http://onsemi.com** 

**3** 

**NPN − 2N6515, 2N6517; PNP − 2N6520** 

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**----- Start of picture text -----**<br>
−1.4<br>−1.2 TJ = 25°CJ = 25°C = 25°C°CC<br>−1.0<br>−0.8 VBE(sat) @ IC/IB = 10BE(sat) @ IC/IB = 10 @ IC/IB = 10C/IB = 10/IB = 10B = 10 = 10<br>−0.6 VBE(on) @ VCE = −10 VBE(on) @ VCE = −10 V @ VCE = −10 VCE = −10 V = −10 V<br>−0.4<br>−0.2 VCE(sat) @ IC/IB = 10CE(sat) @ IC/IB = 10 @ IC/IB = 10C/IB = 10/IB = 10B = 10 = 10<br>0 VCE(sat) @ IC/IB = 5.0CE(sat) @ IC/IB = 5.0 @ IC/IB = 5.0C/IB = 5.0/IB = 5.0B = 5.0 = 5.0<br>−1.0 −�2.0 −�3.0 −�5.0 −�7.0 −10 −�20 −�30 −�50 −�70 −100<br>IC, COLLECTOR CURRENT (mA)C, COLLECTOR CURRENT (mA), COLLECTOR CURRENT (mA)<br>V, VOLTAGE (VOLTS)<br>**----- End of picture text -----**<br>


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1.4 −1.4<br>TJ = 25°C<br>1.2 −1.2 TJ = 25°CJ = 25°C = 25°C°CC<br>1.0 −1.0<br>0.8 VBE(sat) @ IC/IB = 10 −0.8 VBE(sat) @ IC/IB = 10BE(sat) @ IC/IB = 10 @ IC/IB = 10C/IB = 10/IB = 10B = 10 = 10<br>0.6 VBE(on) @ VCE = 10 V −0.6 VBE(on) @ VCE = −10 VBE(on) @ VCE = −10 V @ VCE = −10 VCE = −10 V = −10 V<br>0.4 −0.4<br>0.2 VCE(sat) @ IC/IB = 10 −0.2 VCE(sat) @ IC/IB = 10CE(sat) @ IC/IB = 10 @ IC/IB = 10C/IB = 10/IB = 10B = 10 = 10<br>0 VCE(sat) @ IC/IB = 5.0 0 VCE(sat) @ IC/IB = 5.0CE(sat) @ IC/IB = 5.0 @ IC/IB = 5.0C/IB = 5.0/IB = 5.0B = 5.0 = 5.0<br>1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 −1.0 −�2.0 −�3.0 −�5.0 −�7.0 −10 −�20 −�30 −�50 −�70 −100<br>IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)C, COLLECTOR CURRENT (mA), COLLECTOR CURRENT (mA)<br>Figure 6. “On” Voltages Figure 7. “On” Voltages<br>NPN 2N6515, 2N6517 PNP 2N6520<br>2.5 2.5<br>2.0 IC � 10 2.0 IC � 10<br>IB IB<br>1.5 1.5<br>1.0 25°C to 125°C 1.0 25°C to 125°C<br>0.50 R�VC for VCE(sat) 0.50 R�VB for VBE −�55°C to<br>−�55 °C to 25°C<br>−�0.5 25°C −�0.5<br>−�1.0 −�1.0<br>−�55 °C to 125°C<br>−�1.5 R�VB for VBE −�1.5 R�VC for VCE(sat) −�55°C to 125°C<br>−�2.0 −�2.0<br>−�2.5 −�2.5<br>1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 −1.0 −�2.0 −�3.0 −�5.0 −�7.0 −10 −�20 −�30 −�50 −�70 −100<br>IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>Figure 8. Temperature Coefficients<br>Figure 9. Temperature Coefficients<br>NPN 2N6515, 2N6517<br>PNP 2N6520<br>100 100<br>5070 TJ = 25°C 5070 Ceb TJ = 25°C<br>30 Ceb 30<br>20 20<br>10 10<br>7.0 7.0 Ccb<br>5.0 5.0<br>Ccb<br>3.0 3.0<br>2.0 2.0<br>1.0 1.0<br>0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 −�0.2 −�0.5 −�1.0 −�2.0 −�5.0 −�10 −�20 −�50 −�10 −�20<br>VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) 0 0<br>V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS)<br>° °<br>V, TEMPERATURE COEFFICIENTS (mV/ C)θ V, TEMPERATURE COEFFICIENTS (mV/ C)θ<br>R R<br>C, CAPACITANCE (pF) C, CAPACITANCE (pF)<br>**----- End of picture text -----**<br>


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Figure 10. Capacitance<br>NPN 2N6515, 2N6517<br>**----- End of picture text -----**<br>


**Figure 11. Capacitance PNP 2N6520** 

**http://onsemi.com** 

**4** 

**NPN − 2N6515, 2N6517; PNP − 2N6520** 

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**----- Start of picture text -----**<br>
1.0�k 1.0�k<br>700 700<br>500 VCE(off) = 100 V 500 td @ VBE(off) = 2.0 V VCE(off) = −100 V<br>300 td @ VBE(off) = 2.0 V ITCJ/I = 25B = 5.0°C 300 ITCJ/I = 25B = 5.0°C<br>200 200 tr<br>tr<br>100 100<br>70 70<br>50 50<br>30 30<br>20 20<br>10 10<br>1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 −1.0 −�2.0 −�3.0 −�5.0 −�7.0 −10 −�20 −�30 −�50 −�70 −100<br>IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>t, TIME (ns) t, TIME (ns)<br>**----- End of picture text -----**<br>


**Figure 12. Turn−On Time NPN 2N6515, 2N6517** 

**Figure 13. Turn−On Time PNP 2N6520** 

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**----- Start of picture text -----**<br>
10�k 2.0�k<br>7.0�k ts<br>5.0�k ts 1.0�k<br>700<br>3.0�k<br>500<br>2.0�k 300 tf VCE(off) = −100 V<br>VCE(off) = 100 V IC/IB = 5.0<br>1.0�k tf IC/IB = 5.0 200 IB1 = IB2<br>700 IB1 = IB2 TJ = 25°C<br>500 TJ = 25°C 100<br>70<br>300<br>50<br>200<br>30<br>100 20<br>1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 −1.0 −�2.0 −�3.0 −�5.0 −�7.0 −10 −�20 −�30 −�50 −�70 −100<br>IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>Figure 14. Turn−Off Time Figure 15. Turn−Off Time<br>NPN 2N6515, 2N6517 PNP 2N6520<br>t, TIME (ns)<br>**----- End of picture text -----**<br>


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+VCC<br>VCC ADJUSTED 2.2 k<br>+10.8 V FOR VCE(off) = 100 V 20 k 50 � SAMPLING SCOPE<br>1.0 k<br>50<br>−9.2 V 1/2MSD7000<br>PULSE WIDTH ≈ 100 �s<br>tr, tf ≤ 5.0 ns APPROXIMATELY<br>DUTY CYCLE ≤ 1.0% −1.35 V (ADJUST FOR V(BE)off = 2.0 V)<br>FOR PNP TEST CIRCUIT,<br>REVERSE ALL VOLTAGE POLARITIES<br>**----- End of picture text -----**<br>


**Figure 16. Switching Time Test Circuit** 

**http://onsemi.com** 

**5** 

**NPN − 2N6515, 2N6517; PNP − 2N6520** 

**==> picture [487 x 382] intentionally omitted <==**

**----- Start of picture text -----**<br>
1.0<br>0.7<br>D = 0.5<br>0.5<br>0.2<br>0.3<br>0.2<br>SINGLE PULSE<br>0.1 0.05<br>0.1<br>0.07 SINGLE PULSE<br>0.05<br>0.03 Z�JC(t) = r(t) • R�JC    TJ(pk) − TC = P(pk) Z�JC(t)<br>Z�JA(t) = r(t) • R�JA    TJ(pk) − TA = P(pk) Z�JA(t)<br>0.02<br>0.01<br>0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0�k 2.0�k 5.0�k 10�k<br>t, TIME (ms)<br>Figure 17. Thermal Response<br>500 FIGURE A<br>200 TA = 25°C 100 �s 10 �s<br>tP<br>100 TC = 25°C 1.0 ms<br>PP PP<br>50 100 ms<br>20<br>CURRENT LIMIT<br>10<br>THERMAL LIMIT<br>5.0 �(PULSE CURVES @ TC = 25°C) t1<br>SECOND BREAKDOWN LIMIT<br>2.0<br>CURVES APPLY 2N6515 1/f<br>1.0<br>0.5 BELOW RATED VCEO 2N6517, 2N6520 DUTY�CYCLE � t1�f � [t][1]<br>0.5 1.0 2.0 5.0 10 20 50 100 200 500 tP<br>VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) PEAK PULSE POWER = PP<br>RESISTANCE (NORMALIZED)<br>IC, COLLECTOR CURRENT (mA)<br>**----- End of picture text -----**<br>


**Figure 18. Active Region Safe Operating Area** 

**Design Note: Use of Transient Thermal Resistance Data** 

## **ORDERING INFORMATION** 

|**Device**|**Package**|**Shipping**†|
|---|---|---|
|2N6515RLRMG|TO−92<br>(Pb−Free)|2000 Ammo Pack|
|2N6517G|TO−92<br>(Pb−Free)|5000 Unit / Bulk|
|2N6517RLRPG|TO−92<br>(Pb−Free)|2000 Ammo Pack|
|2N6520RLRAG|TO−92<br>(Pb−Free)|2000 Tape & Reel|



†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

**http://onsemi.com** 

**6** 

**NPN − 2N6515, 2N6517; PNP − 2N6520** 

## **PACKAGE DIMENSIONS** 

## **TO−92 (TO−226)** CASE 29−11 ISSUE AM 

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A<br>B STRAIGHT LEAD<br>BULK PACK<br>| rn<br>R<br>a<br>P<br>L<br>SEATING<br>PLANE K<br>ier,<br>X X D<br>G<br>H J<br>V C<br>a <— ‘’<br>SECTION X−X<br>1 N<br>N<br>ae<br>**----- End of picture text -----**<br>


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STRAIGHT LEAD<br>BULK PACK<br>**----- End of picture text -----**<br>


NOTES: 

|1. <br>2. <br>3. <br>4.|DIMENSIONING AND TOLERANCING PER ANSI<br>Y14.5M, 1982.<br> CONTROLLING DIMENSION: INCH.<br> CONTOUR OF PACKAGE BEYOND DIMENSION R<br>IS UNCONTROLLED.<br> LEAD DIMENSION IS UNCONTROLLED IN P AND<br>BEYOND DIMENSION K MINIMUM.<br>DIM<br>MIN<br>MAX<br>MIN<br>MAX<br>MILLIMETERS<br>INCHES<br>A<br>0.175<br>0.205<br>4.45<br>5.20<br>—|DIMENSIONING AND TOLERANCING PER ANSI<br>Y14.5M, 1982.<br> CONTROLLING DIMENSION: INCH.<br> CONTOUR OF PACKAGE BEYOND DIMENSION R<br>IS UNCONTROLLED.<br> LEAD DIMENSION IS UNCONTROLLED IN P AND<br>BEYOND DIMENSION K MINIMUM.<br>DIM<br>MIN<br>MAX<br>MIN<br>MAX<br>MILLIMETERS<br>INCHES<br>A<br>0.175<br>0.205<br>4.45<br>5.20<br>—|
|---|---|---|
||B<br>0.170<br>0.210<br>4.32<br>5.33||
||C<br>0.125<br>0.165<br>3.18<br>4.19||
||D<br>0.016<br>0.021<br>0.407<br>0.533||
||G<br>0.045<br>0.055<br>1.15<br>1.39<br>H<br>0.095<br>0.105<br>2.42<br>2.66<br>J<br>0.015<br>0.020<br>0.39<br>0.50<br>K<br>0.500<br>−−−<br>12.70<br>−−−<br>L<br>0.250<br>−−−<br>6.35<br>−−−<br>N<br>0.080<br>0.105<br>2.04<br>2.66<br>P<br>−−−<br>0.100<br>−−−<br>2.54<br>R<br>0.115<br>−−−<br>2.93<br>−−−<br>V<br>0.135<br>−−−<br>3.43<br>−−−<br>Ss<br>a ee ee<br>|<br>=====||



3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 

4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. 

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**----- Start of picture text -----**<br>
R A B BENT LEAD NOTES:1. DIMENSIONING AND TOLERANCING PER<br>TAPE & REEL ASME Y14.5M, 1994.<br>a 2. CONTROLLING DIMENSION:<br>AMMO PACK MILLIMETERS.<br>3. CONTOUR OF PACKAGE BEYOND<br>DIMENSION R IS UNCONTROLLED.<br>P 4. LEAD DIMENSION IS UNCONTROLLED IN<br>T P AND BEYOND DIMENSION K MINIMUM.<br>SEATINGPLANE K DIM MILLIMETERSMIN MAX<br>A 4.45 5.20<br>B 4.32 5.33<br>C 3.18 4.19<br>a X X D GD 0.402.40 0.542.80<br>G J 0.39 0.50<br>J K 12.70 −−−<br>ti = N 2.04 2.66<br>“Ute V C 7 PR 1.502.93 4.00−−−<br>| i SECTION X−X = V 3.43 −−−<br>1 N STYLE 1:<br>PIN 1. EMITTER<br>ic a 2. BASE<br>3. COLLECTOR<br>**----- End of picture text -----**<br>


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---

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