# Bipolar (BJT) Single Transistor, PNP, 80 V, 40 A, 160 W, TO-3, Through Hole ![Product image](https://novapart.co/image/farnell:2845277/) **URL**: https://novapart.co/products/2N6286G/bipolar-bjt-single-transistor-pnp-80-v-40-a-160-w **SKU**: 2N6286G **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Single Bipolar Junction Transistors - BJT **Price**: €5.5100 **Stock**: 10+ ## Specifications | Parameter | Value | |---|---| | No. Of Pins | 2Pins | | Power Dissipation | 160W | | Dc Current Gain Hfe | 100hFE | | Transistor Mounting | Through Hole | | Transistor Polarity | PNP | | Transistor Case Style | TO-3 | | Dc Current Gain Hfe Min | 100hFE | | Operating Temperature Max | 200°C | | Continuous Collector Current | 40A | | Collector Emitter Voltage Max | 80V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:2845277/) ## 2N6284 (NPN); 2N6286, 2N6287 (PNP) ## **Preferred Device** ## Darlington Complementary Silicon Power Transistors These packages are designed for general−purpose amplifier and low−frequency switching applications. ## **http://onsemi.com** ## **Features** **20 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 100 VOLTS, 160 WATTS** - High DC Current Gain @ IC = 10 Adc − hFE = 2400 (Typ) − 2N6284 = 4000 (Typ) − 2N6287 - Collector−Emitter Sustaining Voltage − VCEO(sus) = 100 Vdc (Min) • Monolithic Construction with Built−In Base−Emitter Shunt Resistors COLLECTOR CASE • Pb−Free Packages are Available* BASE 1 **MAXIMUM RATINGS** (Note 1) **Rating Symbol Value Unit** EMITTER 2 Collector−Emitter Voltage VCEO Vdc 2N6286 80 2N6284/87 100 **MARKING DIAGRAM** Collector−Base Voltage VCB Vdc 2N6286 80 2N6284/87 100 1 2N628xG Emitter−Base Voltage VEB 5.0 Vdc 2 AYYWW Collector Current −Continuous IC 20 Adc **TO−204AA (TO−3)** MEX Peak 40 **CASE 1−07 STYLE 1** Base Current IB 0.5 Adc Total Power Dissipation @ TC = 25 ° C PD 160 W 2N628x = Device Code Derate above 25 ° C 0.915 W/ ° C x = 4, 6 or 7 Operating and Storage TemperatureRange TJ, Tstg −65 to +200 ° C GA = Location Code= Pb−Free Package ~~a~~ YY € = Year **THERMAL CHARACTERISTICS** (Note 1) WW = Work Week **Characteristic Symbol Max Unit** MEX = Country of Orgin Thermal Resistance, Junction−to−Case R JC 1.09 ° C/W **ORDERING INFORMATION** Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the **Device Package Shipping** Recommended Operating Conditions may affect device reliability. 1. Indicates JEDEC Registered Data. 2N6284 TO−3 100 Units/Tray |**Device**|**Package**|**Shipping**| |---|---|---| |2N6284|TO−3|100 Units/Tray| |2N6284G|TO−3
(Pb−Free)|100 Units/Tray| |2N6286|TO−3|100 Units/Tray| |2N6286G|TO−3
(Pb−Free)|100 Units/Tray| |2N6287|TO−3|100 Units/Tray| |2N6287G|TO−3
(Pb−Free)|100 Units/Tray| - *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Publication Order Number: **1** © Semiconductor Components Industries, LLC, 2008 **September, 2008 − Rev. 4** **2N6284/D** ## **2N6284 (NPN); 2N6286, 2N6287 (PNP)** |160|| |---|---| |PD, POWER DISSIPATION (WATTS)
60
40
140
20
80
100
120|| |0|| |25
50
100
125
200
0
75
150
175|| |TC, CASE TEMPERATURE (°C)|| |**Figure 1. Power Derating**|| |ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**ÎÎÎÎÎÎÎÎÎÎÎ
**ELECTRICAL CHARACTERISTICS**(TC= 25�C unless otherwise noted) (Note 2)
**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**
**Characteristic**
ÎÎÎÎÎ
ÎÎÎÎÎ
**Symbol**
ÎÎ**Î**
ÎÎ**Î**
**Min**
ÎÎ**Î**
ÎÎ**Î**
**Max**
ÎÎ
ÎÎ
**Unit**
ÎÎÎÎÎÎÎÎÎÎÎ
**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**ÎÎÎÎÎÎÎÎÎÎÎ
**OFF CHARACTERISTICS**
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**
Collector−Emitter Sustaining Voltage
(IC= 0.1 Adc, IB= 0)
2N6286
2N6284, 2N6287
ÎÎÎÎÎ
ÎÎÎÎÎ
**ÎÎÎÎÎ**
VCEO(sus)
ÎÎ**Î**
ÎÎ**Î**
**ÎÎÎ**
80
100
ÎÎ**Î**
ÎÎ**Î**
**ÎÎÎ**
−
−
ÎÎ
ÎÎ
**ÎÎ**
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**
Collector Cutoff Current
(VCE= 40 Vdc, IB= 0)
(VCE= 50 Vdc, IB= 0)
ÎÎÎÎÎ
**ÎÎÎÎÎ**
ICEO
ÎÎ**Î**
**ÎÎÎ**
−
−
ÎÎ**Î**
**ÎÎÎ**
1.0
1.0
ÎÎ
**ÎÎ**
mAdc|| |ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current
(VCE= Rated VCB, VBE(off)= 1.5 Vdc)
(VCE= Rated VCB, VBE(off)= 1.5 Vdc, TC= 150�C)
ÎÎÎÎÎ
ÎÎÎÎÎ
ICEX
ÎÎ**Î**
ÎÎ**Î**
−
−
ÎÎ**Î**
ÎÎ**Î**
0.5
5.0
ÎÎ
ÎÎ
mAdc|| |**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**
**ÎÎÎÎÎ**
**ÎÎÎ**
**ÎÎÎ**
**ÎÎ**
**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**
Emitter Cutoff Current
(VBE= 5.0 Vdc, IC= 0)
ÎÎÎÎÎ
IEBO
ÎÎ**Î**
−
ÎÎ**Î**
2.0
ÎÎ
mAdc
ÎÎÎÎÎÎÎÎÎÎÎ|| |**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**ÎÎÎÎÎÎÎÎÎÎÎ
**ON CHARACTERISTICS**(Note 3)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**
DC Current Gain
(IC= 10 Adc, VCE= 3.0 Vdc)
(IC= 20 Adc, VCE= 3.0 Vdc)
ÎÎÎÎÎ
ÎÎÎÎÎ
**ÎÎÎÎÎ**
hFE
ÎÎ**Î**
ÎÎ**Î**
**ÎÎÎ**
750
100
ÎÎ**Î**
ÎÎ**Î**
**ÎÎÎ**
18,000
−
ÎÎ
ÎÎ
**ÎÎ**
−|| |ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**
Collector−Emitter Saturation Voltage
(IC= 10 Adc, IB= 40 mAdc)
(IC= 20 Adc, IB= 200 mAdc)
ÎÎÎÎÎ
ÎÎÎÎÎ
**ÎÎÎÎÎ**
VCE(sat)
ÎÎ**Î**
ÎÎ**Î**
**ÎÎÎ**
−
−
ÎÎ**Î**
ÎÎ**Î**
**ÎÎÎ**
2.0
3.0
ÎÎ
ÎÎ
**ÎÎ**
Vdc
**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**
Base−Emitter On Voltage
(IC= 10 Adc, VCE= 3.0 Vdc)
**ÎÎÎÎÎ**
VBE(on)
**ÎÎÎ**
−
**ÎÎÎ**
2.8
**ÎÎ**
Vdc|| |ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**
Base−Emitter Saturation Voltage
(IC= 20 Adc, IB= 200 mAdc)
ÎÎÎÎÎ
ÎÎÎÎÎ
VBE(sat)
ÎÎ**Î**
ÎÎ**Î**
−
ÎÎ**Î**
ÎÎ**Î**
4.0
ÎÎ
ÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎ
**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**ÎÎÎÎÎÎÎÎÎÎÎ
**DYNAMIC CHARACTERISTICS**
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**
Magnitude of Common Emitter Small−Signal Short−Circuit
Forward Current Transfer Ratio
(IC= 10 Adc, VCE= 3.0 Vdc, f = 1.0 MHz)
ÎÎÎÎÎ
ÎÎÎÎÎ
**ÎÎÎÎÎ**
|hfe|
ÎÎ**Î**
ÎÎ**Î**
**ÎÎÎ**
4.0
ÎÎ**Î**
ÎÎ**Î**
**ÎÎÎ**
−
ÎÎ
ÎÎ
**ÎÎ**
MHz
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Output Capacitance
(VCB= 10 Vdc, IE= 0, f = 0.1 MHz)
2N6284
ÎÎÎÎÎ
Cob
ÎÎ**Î**
−
ÎÎ**Î**
400
ÎÎ
pF|| |**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**
2N6286, 2N6287
**ÎÎÎÎÎ**
**ÎÎÎ**
−
**ÎÎÎ**
600
**ÎÎ**|| |ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Small−Signal Current Gain
(IC= 10 Adc, VCE= 3.0 Vdc, f = 1.0 kHz)
ÎÎÎÎÎ
ÎÎÎÎÎ
hfe
ÎÎ**Î**
ÎÎ**Î**
300
ÎÎ**Î**
ÎÎ**Î**
−
ÎÎ
ÎÎ
−
2. Indicates JEDEC Registered Data.|| |3. Pulse test: Pulse Width = 300�s, Duty Cycle = 2%|| **http://onsemi.com** **2** **2N6284 (NPN); 2N6286, 2N6287 (PNP)** **==> picture [257 x 151] intentionally omitted <==** **----- Start of picture text -----**
VCC
RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS - 30 V
D1 MUST BE FAST RECOVERY TYPE e.g.,
�1N5825 USED ABOVE IB � 100 mA RC
�MSD6100 USED BELOW IB � 100 mA SCOPE
TUT
V2 RB
APPROX
+ 8.0 V
51 D1 � 8.0 k � 50
0
V1 + 4.0 V
APPROX 25 �s FOR td AND tr, D1 IS DISCONNECTED
- 12 V AND V2 = 0
tr, tf � 10 ns FOR NPN TEST CIRCUIT REVERSE ALL POLARITIES
DUTY CYCLE = 1.0%
**----- End of picture text -----**
**Figure 2. Switching Times Test Circuit** **==> picture [234 x 170] intentionally omitted <==** **----- Start of picture text -----**
10
7.0 ts 2N6284 (NPN)
5.0 2N6287 (PNP)
3.0
2.0
tf tr
1.0
0.7
0.5
0.3 VCC = 30 Vdc
0.2 IC/IB = 250
IB1 = IB2
TJ = 25°C td @ VBE(off) = 0 V
0.1
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20
IC, COLLECTOR CURRENT (AMP)
μ
t, TIME (��s)
**----- End of picture text -----**
**Figure 3. Switching Times** **==> picture [491 x 168] intentionally omitted <==** **----- Start of picture text -----**
1.0
0.7 D = 0.5
0.5
0.3 0.2
0.2
0.1
0.1 0.05 R�JC(t) = r(t) R�JC P(pk)
0.07 R �JC = 1.09 ° C/W MAX
0.02
0.05 D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN t 1
0.03 0.01 READ TIME AT t 1 t 2
0.02 SINGLE PULSE T J(pk) - T C = P (pk) R �JC (t) DUTY CYCLE, D = t 1 /t 2
0.010.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 300 500 1000
t, TIME OR PULSE WIDTH (ms)
r(t), EFFECTIVE TRANSIENT
THERMAL RESISTANCE (NORMALIZED)
**----- End of picture text -----**
**Figure 4. Thermal Response** **http://onsemi.com** **3** **2N6284 (NPN); 2N6286, 2N6287 (PNP)** ## **ACTIVE−REGION SAFE OPERATING AREA** **==> picture [161 x 171] intentionally omitted <==** **----- Start of picture text -----**
50
0.1 ms
20
0.5 ms
10
1.0 ms
5.0
5.0 ms
2.0 dc
1.0 TJ = 200°C
0.5
0.2 SECOND BREAKDOWN LIMITED
BONDING WIRE LIMITED
0.1 THERMAL LIMITATION @ TC = 25°C
�SINGLE PULSE
0.05
2.0 5.0 10 20 50 100
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (AMP)
**----- End of picture text -----**
There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e. the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on TJ(pk) = 200�C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) < 200�C. TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. **Figure 5. 2N6284, 2N6287** **==> picture [239 x 385] intentionally omitted <==** **----- Start of picture text -----**
10,000
5000 TJ = 25°C
VCE = 3.0 Vdc
2000 IC = 10 A
1000
500
200
100
50
2N6284 (NPN)
20
2N6287 (PNP)
10
1.0 2.0 5.0 10 20 50 100 200 500 1000
f, FREQUENCY (kHz)
Figure 6. Small−Signal Current Gain
1000
TJ = 25°C
700
500
300 C ib
Cob
200
2N6284 (NPN)
2N6287 (PNP)
100
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
VR, REVERSE VOLTAGE (VOLTS)
hFE, SMALL-SIGNAL CURRENT GAIN
C, CAPACITANCE (PF)
**----- End of picture text -----**
**Figure 7. Capacitance** **http://onsemi.com** **4** **2N6284 (NPN); 2N6286, 2N6287 (PNP)** **==> picture [20 x 7] intentionally omitted <==** **----- Start of picture text -----**
NPN
**----- End of picture text -----**
**==> picture [32 x 8] intentionally omitted <==** **----- Start of picture text -----**
2N6284
**----- End of picture text -----**
**==> picture [33 x 18] intentionally omitted <==** **----- Start of picture text -----**
PNP
2N6287
**----- End of picture text -----**
**==> picture [488 x 612] intentionally omitted <==** **----- Start of picture text -----**
20,000 30,000
VCE = 3.0 V 20,000 VCE = 3.0 V
10,0007000 TJ = 150°C 10,000 TJ = 150°C
5000 7000
5000
3000 25°C
2000 25°C 3000
2000
1000 -�55°C -�55°C
700 1000
500 700
500
300
200 300
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20
IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)
Figure 8. DC Current Gain
3.0 3.0
TJ = 25°C TJ = 25°C
2.6 IC = 5.0 A 10 A 15 A 2.6 15 A
IC = 5.0 A 10 A
2.2 2.2
1.8 1.8
1.4 1.4
1.0 1.0
0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50
IB, BASE CURRENT (mA) IB, BASE CURRENT (mA)
Figure 9. Collector Saturation Region
3.0 3.0
TJ = 25°C TJ = 25°C
2.5 2.5
2.0 2.0
VBE(sat) @ IC/IB = 250
1.5 1.5 VBE(sat) @ IC/IB = 250
1.0 VBE @ VCE = 3.0 V 1.0 VBE @ VCE = 3.0 V
VCE(sat) @ IC/IB = 250 VCE(sat) @ IC/IB = 250
0.5 0.5
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20
IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)
hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN
VCE, COLLECTOR‐EMITTER VOLTAGE (VOLTS) VCE, COLLECTOR‐EMITTER VOLTAGE (VOLTS)
V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS)
**----- End of picture text -----**
**Figure 10. “On” Voltages** **http://onsemi.com** **5** **2N6284 (NPN); 2N6286, 2N6287 (PNP)** **NPN 2N6284** **==> picture [32 x 18] intentionally omitted <==** **----- Start of picture text -----**
PNP
2N6287
**----- End of picture text -----**
**==> picture [486 x 172] intentionally omitted <==** **----- Start of picture text -----**
+�5.0 +�5.0
+�4.0 hFE�@�VCE� ��3.0�V +�4.0 hFE�@�VCE� ��3.0�V
*APPLIES FOR IC/IB ≤ *APPLIES FOR IC/IB ≤
250 250
+�3.0 +�3.0
+�2.0 25°C to 150°C +�2.0 25°C to 150°C
+�1.0 +�1.0 -�55°C to + 25°C
0 -�55°C to + 25°C 0
-�1.0 *�VC for VCE(sat) -�1.0 *�VC for VCE(sat)
-�2.0 -�2.0
25°C to + 150°C 25°C to + 150°C
-�3.0 �VB for VBE -�3.0 �VB for VBE
-�4.0 -�55°C to + 25°C -�4.0 -�55°C to + 25°C
-�5.0 -�5.0
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20
IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)
C)° C)°
V, TEMPERATURE COEFFICIENTS (mV/ V, TEMPERATURE COEFFICIENTS (mV/
θ θ
**----- End of picture text -----**
**Figure 11. Temperature Coefficients** **==> picture [487 x 174] intentionally omitted <==** **----- Start of picture text -----**
10 [5] 10 [3]
VCE = 30 V V CE = 30 V
10 [4] 10 [2]
T J = 150°C
10 [3] 10 [1]
T J = 150°C
10 [2] 10 [0] 100°C
100 ° C
10 [1] 10 [-1]
REVERSE FORWARD REVERSE FORWARD
10 [0] 10 [-2] 25°C
25°C
10 [-1] 10 [-3]
-�0.6 -�0.4 -�0.2 0 +�0.2 +�0.4 +�0.6 +�0.8 +�1.0 +�1.2 + 1.4 +�0.6 +�0.4 +�0.2 0 -�0.2 -�0.4 -�0.6 -�0.8 -�1.0 -�1.2 -�1.4
VBE, BASE-EMITTER VOLTAGE (VOLTS) VBE, BASE-EMITTER VOLTAGE (VOLTS)
μ μ
, COLLECTOR CURRENT (��A) , COLLECTOR CURRENT (��A)
IC IC
**----- End of picture text -----**
**Figure 12. Collector Cut−Off Region** **==> picture [148 x 138] intentionally omitted <==** **----- Start of picture text -----**
COLLECTOR
NPN
2N6284
BASE
� 8.0 k � 60
EMITTER
**----- End of picture text -----**
**==> picture [145 x 138] intentionally omitted <==** **----- Start of picture text -----**
COLLECTOR
PNP
2N6287
BASE
� 8.0 k � 60
EMITTER
**----- End of picture text -----**
**Figure 13. Darlington Schematic** **http://onsemi.com** **6** **2N6284 (NPN); 2N6286, 2N6287 (PNP)** ## **PACKAGE DIMENSIONS** **TO−204 (TO−3)** CASE 1−07 ISSUE Z **==> picture [170 x 168] intentionally omitted <==** **----- Start of picture text -----**
A
N
C
−T− SEATING
Jes E PLANE
a D 2 PL K
0.13 (0.005) M T Q M Y [M]
U
−Y−
V L
2 —
G B
H 1
= −Q−
0.13 (0.005) M T Y M
**----- End of picture text -----**
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. **==> picture [124 x 159] intentionally omitted <==** **----- Start of picture text -----**
3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO-204AA OUTLINE SHALL APPLY.
INCHES MILLIMETERS
—— DIM MIN MAX MIN MAX
A 1.550 REF 39.37 REF
B --- 1.050 --- 26.67
———— C 0.250 0.335 6.35 8.51
D 0.038 0.043 0.97 1.09
E 0.055 0.070 1.40 1.77
G 0.430 BSC 10.92 BSC
H 0.215 BSC 5.46 BSC
sone K 0.440 0.480 11.18 12.19
L 0.665 BSC 16.89 BSC
N --- 0.830 --- 21.08
Q 0.151 0.165 3.84 4.19
U 1.187 BSC 30.15 BSC
V 0.131 0.188 3.33 4.77
————
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
**----- End of picture text -----**
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