# Bipolar (BJT) Single Transistor, PNP, 45 V, 4 A, 40 W, TO-220, Through Hole

![Product image](https://novapart.co/image/farnell:1862550/)

**URL**: https://novapart.co/products/2N6124/bipolar-bjt-single-transistor-pnp-45-v-4-a-40-w-to
**SKU**: 2N6124
**Manufacturer**: MULTICOMP PRO
**Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Single Bipolar Junction Transistors - BJT
**Price**: €0.9740
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Power Dissipation | 40W |
| Dc Current Gain Hfe | 100hFE |
| Transistor Mounting | Through Hole |
| Transistor Polarity | PNP |
| Transition Frequency | 2.5MHz |
| Transistor Case Style | TO-220 |
| Dc Current Gain Hfe Min | 100hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 4A |
| Collector Emitter Voltage Max | 45V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1862550/)

## **Bipolar Transistor** 

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2. Collector<br>1. Base<br>3. Emitter<br>**----- End of picture text -----**<br>


**Pin Configuration:** 

1. Emitter 

## **Description:** 

2. Base 

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3. Collector<br>**----- End of picture text -----**<br>


A Silicon epitaxial PNP transistor in a standard TO-220 type package designed for use in general-purpose amplifier and switching applications. 

## **Maximum Ratings:** 

|**Maximum Ratings:**||||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Rating**|**Unit**|
|Collector-Base Voltage|VCB|45|V|
|Collector-Emitter Voltage|VCEO|||
|Emitter-Base Voltage|VEB|5||
|Collector Current  -Continuous|IC|4|A|
|Base Current|IB|1||
|Collector Power Dissipation (TC= +25°C),<br>Derate Above 25°C|PD|40<br>0.32|W<br>W/°C|
|Operating Junction Temperature Range|TJ|-65 to +150|°C|
|Storage Temperature Range|Tstg|||
|Thermal Resistance, Junction-to-Case|RthJC|3.125|°C/W|



Newark.com/multicomp-pro Farnell.com/multicomp-pro Element14.com/multicomp-pro 

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## **Bipolar Transistor** 

**Electrical Characteristics: (TA = +25°C unless otherwise specified)** 

|**Parameter**<br>**Symbol**<br>**Test Conditions**<br>**Min**<br>**Max**<br>**Unit**<br>**Off Characteristics**<br>~~a~~|**Parameter**<br>**Symbol**<br>**Test Conditions**<br>**Min**<br>**Max**<br>**Unit**<br>**Off Characteristics**<br>~~a~~|**Parameter**<br>**Symbol**<br>**Test Conditions**<br>**Min**<br>**Max**<br>**Unit**<br>**Off Characteristics**<br>~~a~~|**Parameter**<br>**Symbol**<br>**Test Conditions**<br>**Min**<br>**Max**<br>**Unit**<br>**Off Characteristics**<br>~~a~~|**Parameter**<br>**Symbol**<br>**Test Conditions**<br>**Min**<br>**Max**<br>**Unit**<br>**Off Characteristics**<br>~~a~~|**Parameter**<br>**Symbol**<br>**Test Conditions**<br>**Min**<br>**Max**<br>**Unit**<br>**Off Characteristics**<br>~~a~~|**Parameter**<br>**Symbol**<br>**Test Conditions**<br>**Min**<br>**Max**<br>**Unit**<br>**Off Characteristics**<br>~~a~~|
|---|---|---|---|---|---|---|
||Collector-Emitter Saturation Voltage|VCEO(SUS)|IC= 100mA, IB= 0, Note 1|45|-|V|
|||ICEO|VCE= 45V, IB= 0||0.1||
||Collector Cutoff Current|ICEX|VCE= 45V, VBE(off)= 1.5V|-|2|mA|
||||VCE= 45V, VBE (off)= -1.5V ,TC= +125°C||2||
||Emitter Cutoff Current|IEBO|VBE= 5V, IC= 0||1||
||**On Characteristics(Note 1)**||||||
||DC Current Gain|hFE|VCE= 2V, IC= 1.5A|25|100||
||||VCE= 2V, IC= 4A|10|-||
||Collector-Emitter Saturation Voltage|VCE(Sat)|IC= 4A, IB= 1A|-|1.4|V|
||Base-Emitter ON Voltage|VBE(on)|VCE= 2V, IC= 1.5A||1.2||
||**Dynamic Characteristics**||||||
|Current Gain - Bandwidth Product<br>fT<br>VCE= 4V, IC= 0.1A, f = 1MHz<br>2.5<br>-<br>MHz<br>Small - signal Current Gain<br>hfe<br>VCB= 2V, IC= 0.1A, f = 1kHz<br>25<br>~~ae~~|||||||
|**Note**:|||||||
|1. Pulse Test: Pulse Width = 300µs, Duty Cycle%2%|||||||



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Dim A B C D E F G H J K L M N O<br>Min. 14.42 9.63 3.65 - 1.15 3.75 2.29 2.54 - 12.7 2.8 2.03 -<br>7°<br>Max. 16.51 10.67 4.83 0.9 1.4 3.88 2.79 3.43 0.56 14.73 4.07 2.92 31.24<br>es<br>Dimensions : Millimetres<br>|<br>Part Number Table<br>Description Part Number<br>Transistor, PNP, 4A, 45V, TO-220 2N6124<br>———<br>Important Notice :  This data sheet and its contents (the “Information”) belong to the members of the AVNET group of companies (the “Group”) or are licensed to it. No licence is granted for<br>the use of it other than for information purposes in connection with the products to which it relates. No licence of any intellectual property rights is granted. The Information is subject to change<br>without notice and replaces all data sheets previously supplied. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness,<br>any error in or omission from it or for any use made of it. Users of this data sheet should check for themselves the Information and the suitability of the products for their purpose and not make<br>any assumptions based on information included or omitted. Liability for loss or damage resulting from any reliance on the Information or use of it (including liability resulting from negligence or<br>where the Group was aware of the possibility of such loss or damage arising) is excluded. This will not operate to limit or restrict the Group’s liability for death or personal injury resulting from its<br>negligence. Multicomp Pro is the registered trademark of Premier Farnell Limited 2019.<br>a<br>Newark.com/multicomp-pro<br>Farnell.com/multicomp-pro<br>Element14.com/multicomp-pro<br>multicomp<br>**----- End of picture text -----**<br>


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- [Supplier page](https://es.farnell.com/en-ES/multicomp/2n6124/transistor-pnp-4a-45v-to220/dp/1862550)
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