# Bipolar (BJT) Single Transistor, Darlington, NPN, 80 V, 12 A, 150 W, TO-3, Through Hole

![Product image](https://novapart.co/image/farnell:1165897/)

**URL**: https://novapart.co/products/2N6058../bipolar-bjt-single-transistor-darlington-npn-80-v
**SKU**: 2N6058..
**Manufacturer**: MULTICOMP PRO
**Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Single Bipolar Junction Transistors - BJT
**Price**: €0.1750
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 2Pins |
| Power Dissipation | 150W |
| Dc Current Gain Hfe | 750hFE |
| Transistor Mounting | Through Hole |
| Transistor Polarity | NPN |
| Transition Frequency | 4MHz |
| Transistor Case Style | TO-3 |
| Dc Current Gain Hfe Min | 750hFE |
| Operating Temperature Max | 200°C |
| Continuous Collector Current | 12A |
| Collector Emitter Voltage Max | 80V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1165897/)

## **Darlington Transistor TO-3** 

## **Description:** 

Darlington complementary silicon power transistors. Designed for general-purpose amplifier and low frequency switching applications. 

## **Features:** 

- High DC current gain - hFE = 3,500 (typical) at IC = 5A DC 

- Collector-emitter sustaining voltage - at 100mA VCEO (sus) = 80V DC (min.) - 2N6058 

- Monolithic construction with built-in-base-emitter shunt resistors 

## **Maximum Ratings** 

|**Characteristic**|**Symbol**|**Value**|**Unit**|
|---|---|---|---|
|Collector-Emitter Voltage|VCEO|80|V DC|
|CoIIector-Base Voltage|VCB|||
|Emitter-Base Voltage|VEB|5||
|Collector Current  -Continuous<br>-Peak|IC|12<br>20|A DC|
|Base Current|IB|0.2||
|Total Power Dissipation at TC= 25°C<br>Derate above 25°C|PD|150<br>0.857|W<br>W/°C|
|Operating and Storage Junction Temperature Range|TJ, TStg|-65 °C to +200 °C|°C|



## **Thermal Characteristics** 

|**Thermal Characteristics**||||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Max.**|**Unit**|
|Thermal Resistance Junction to Case|Rθjc|1.17|°C/W|



(1) Indicates JEDEC Registered Data. 

Newark.com/multicomp-pro Farnell.com/multicomp-pro Element14.com/multicomp-pro 

17/09/19 V1.0 

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## **Darlington Transistor TO-3** 

## **Electrical Characteristics (TC = 25°C unless otherwise noted)** 

|**Electrical Characteristics (TC = 25°C unless otherwise noted)(TC = 25°C unless otherwise noted)**|||||
|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min.**|**Max.**|**Unit**|
|**OffCharacteristics**|||||
|Collector-Emitter Sustaining Voltage (2)<br>(lC= 100mA DC, lB= 0)|VCEO (sus)|80|-|V DC|
|Collector Cut off Current<br>(VCE= 40V DC, IB= 0)|ICEO|-|1||
|Collector Cut off Current<br>(VCE= Rated VCEO, VBE (off)= 1.5V DC)<br>(VCE= Rated VCEO, VBE(off) = 1.5V DC, TC= 150°C)|ICEX|-|0.5<br>5|mA DC|
|Emitter Cut off Current<br>(VBE= 5V DC, IC= 0)|IEBO|-|2||
|**OnCharacteristics(2)**|||||
|DC Current Gain<br>(IC= 6A DC, VCE= 3V DC) (IC= 12A DC, VCE= 3V DC)|hFE|750<br>100|18,000<br>-|-|
|Collector-Emitter Saturation Voltage<br>(IC= 6A DC, lB= 24mA DC) (IC= 12A DC, lB= 120mA DC)|VCE (sat)|-<br>-|2<br>3||
|Base-Emitter Saturation Voltage<br>(IC= 12A DC, IB= 120mA DC)|VBE (sat)|-|4|V DC|
|Base-Emitter On Voltage<br>(IC= 6A DC, VCE= 3V DC)|VBE (on)|-|2.8||
|**DynamicCharacteristics**|||||
|Magnitude of Common-Emitter Small-Signal Short-Circuit Forward<br>Current Transfer Ratio|hfe|4|-|MHz|
|(IC= 5A DC, VCE= 3V DC, f = 1MHz)|||||
|Output Capacitance<br>(VCB= 10V DC, IE= 0, f = 0.1MHz)|Cob|-|500<br>300|pF|
|Small-Signal Current Gain<br>(IC= 5A DC, VCE= 3V DC, f = 1kHz)|hfe|300|-|-|



Indicates JEDEC Registered Data. 

(2) Pulse test: Pulse Width = 300μs, Duty Cycle = 2%. 

**Power Derating** 

**==> picture [10 x 129] intentionally omitted <==**

**----- Start of picture text -----**<br>
PD, Power Dissipation (Watts)<br>**----- End of picture text -----**<br>


**TC, Case Temperature (°C)** 

Newark.com/multicomp-pro Farnell.com/multicomp-pro Element14.com/multicomp-pro 

17/09/19 V1.0 

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## **Darlington Transistor TO-3** 

## **Switching Times Test Circuit** 

For NPN Test Circuit Reverse Diode and Voltage Polarities 

## **Thermal Response** 

**==> picture [271 x 375] intentionally omitted <==**

**----- Start of picture text -----**<br>
ee ce<br>VED = 0<br>0.5ee<br>03-4 o-oo eee<br>pope ttt | | laterite | |<br>neeo<br>otens LI PL}<br>o.07 E 0.05 a Rego<br>oos 6 a D<br>Lom Leet—— [TTT] oe ee ee ee Pulse<br>OII<br>noe PT Tr rT|<br>oe Pet<br>oo1 LJ PUT | Yt A<br>0.01 0.02 o€<0300601 0203 05 1.0 2030 50<br>t, Time (ms)<br>Active-Region Safe Operating Area<br>0 —o——O =<br>fT TT<br>oj} ——— a<br>ee I Dein PO waa bala O_O<br>cS ee i ee<br>5.0 0.53 =et<br>1.Oms -——_—_+} a<br>Es 5.0ms =-<br>| nl T = 700°C es eee ee<br>OP SEE SO<br>0.5 -_——P—> ——F Ft Fg<br>_ a oe<br>of<br>2 ao Eecond Breakdown Limited QQ]<br>me Bonding VYyire Limited dd . [Tt]<br>qb* MO Thermal Limitationat T. = 25°C LDA |<br>—— fingle ule) " ———<br>10 30 30 40 To 100<br>VCE, Collector-Emitter Voltage (Volts)<br>Resistance (Normalized)<br>r (t), Effective Transient Thermal<br>, Collector Current (Amperes)<br>IC<br>**----- End of picture text -----**<br>


There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. 

The data is based on T = 200°C; TC is variable J (pk) depending on conditions. Second breakdown pulse limits are valid for duty 

cycles to 10% provided TJ (pk) ≤200°C; TJ (pk) may be calculated from the data. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 

Newark.com/multicomp-pro Farnell.com/multicomp-pro Element14.com/multicomp-pro 

17/09/19 V1.0 

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## **Darlington Transistor TO-3** 

**==> picture [175 x 166] intentionally omitted <==**

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Small-Signal Current Gain<br>Or TTToT Oso<br>20007<br>‘oR or fe<br> SEES TTTIMIE (26<br>— ERRere<br>soof LT<br>re se LL<br>ed SS<br>aniDCLL2050 CO 10 Cr2080on100-200<br>f, Frequency (kHz)<br> Small-Signal Current Gain<br>fe,<br>h<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Capacitance<br>500<br>SSO<br>sooo EET<br>3Uu|]pd |‘UtToME]<br>ASS a<br>‘ibe lil| i<br>‘0 DISS<br>FQ —<br>,sjEase HHL<br>0o.1 0.2 o65 140 20 5.0 10 20<br>VR, Reverse Voltage (Volts)<br>C, Capacitance (pF)<br>**----- End of picture text -----**<br>


## **DC Current Gain** 

## **Collector Saturation Region** 

**==> picture [177 x 155] intentionally omitted <==**

**----- Start of picture text -----**<br>
2a} = 208 Joos 08<br>4 Pt HF<br>40<br>To<br>15 co. 0 ao<br>IB, Base Current (mA)<br>(Volts)<br> Collector-Emitter Voltage<br>CE,<br>V<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
eySS en 0 4<br>a ee 40<br>2.000 EE EEE<br>‘oof CEILING<br>H?03 05 70 20 30 50 to 20 15<br>I  Collector Current (Amperes)<br>C,<br>" On "  Voltages<br>3.0eeR25<br>ee<br>en<br>BRRdl)<br>sPeem ec<br>eoneeitSlie<br>LL<br>=<br>es moO | rece iet<br>nya 3 045 1.0 20 3.0 45.0<br>I  Collector Current (Amperes)<br>C,<br>(Volts)<br>, DC Current Gain<br>FE<br>h  Collector-Emitter Voltage<br>CE,<br>V<br>V, Voltage (Volts)<br>**----- End of picture text -----**<br>


Newark.com/multicomp-pro Farnell.com/multicomp-pro Element14.com/multicomp-pro 

17/09/19 V1.0 

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## **Darlington Transistor TO-3** 

## **Dimensions** 

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**----- Start of picture text -----**<br>
(TO-3)<br>**----- End of picture text -----**<br>


**Pin Configuration:** Pin 1. Base 2. Emitter Collector (Case) 

|**Dimensions**|**Min.**|**Max.**|
|---|---|---|
|A|1.55(39.37)Reference||
|B|-|1.05 (26.67)|
|C|0.25 (6.35)|0.335 (8.51)|
|D|0.038 (0.97)|0.043 (1.09)|
|E|0.055 (1.4)|0.07 (1.77)|
|G|0.43 (10.92) BSC||
|H|0.215 (5.46) BSC||
|K|0.44 (11.18)|0.48 (12.19)|
|L|0.665 (16.89) BSC||
|N|-|0.83 (21.08)|
|Q|0.151 (3.84)|0.165 (4.19)|
|U|1.187 (30.15) BSC||
|V|0.131 (3.33)|0.188 (4.77)|



Dimensions : Inches (Millimetres) 

## **Part Number Table** 

|**Part Number Table**||
|---|---|
|**Description**|**Part Number**|
|Darlington Transistor, TO-3|2N6058|



**Important Notice :** This data sheet and its contents (the “Information”) belong to the members of the AVNET group of companies (the “Group”) or are licensed to it. No licence is granted for the use of it other than for information purposes in connection with the products to which it relates. No licence of any intellectual property rights is granted. The Information is subject to change without notice and replaces all data sheets previously supplied. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any error in or omission from it or for any use made of it. Users of this data sheet should check for themselves the Information and the suitability of the products for their purpose and not make any assumptions based on information included or omitted. Liability for loss or damage resulting from any reliance on the Information or use of it (including liability resulting from negligence or where the Group was aware of the possibility of such loss or damage arising) is excluded. This will not operate to limit or restrict the Group’s liability for death or personal injury resulting from its negligence. Multicomp Pro is the registered trademark of Premier Farnell Limited 2019. 

Newark.com/multicomp-pro Farnell.com/multicomp-pro Element14.com/multicomp-pro 

17/09/19 V1.0 

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- [Supplier page](https://es.farnell.com/en-ES/multicomp-pro/2n6058/darlington-transistor-to-3/dp/1165897)
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