# Bipolar (BJT) Single Transistor, Darlington, PNP, 80 V, 12 A, 150 W, TO-3, Through Hole
**URL**: https://novapart.co/products/2N6051../bipolar-bjt-single-transistor-darlington-pnp-80-v
**SKU**: 2N6051..
**Manufacturer**: MULTICOMP PRO
**Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Single Bipolar Junction Transistors - BJT
**Price**: €1.2400
**Stock**: 200+
**Lead Time**: 2 days (indicative)
## Specifications
| Parameter | Value |
|---|---|
| No. Of Pins | 2Pins |
| Power Dissipation | 150W |
| Dc Current Gain Hfe | 18000hFE |
| Transistor Mounting | Through Hole |
| Transistor Polarity | PNP |
| Transition Frequency | 4MHz |
| Transistor Case Style | TO-3 |
| Dc Current Gain Hfe Min | 18000hFE |
| Operating Temperature Max | 200°C |
| Continuous Collector Current | 12A |
| Collector Emitter Voltage Max | 80V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:1165916/)
## **Darlington Transistor TO-3**
**PNP 2N6051**
12A Complementary Silicon Power Transistors 60V - 100V 150W
## **Description:**
Designed for general-purpose power amplifier and low frequency switching applications
## **Features:**
- Monolithic construction with bult-in base-emitter shunt resistors
**TO-3**
- High DC current gain - hFE = 3,500 (typical) at IC = 5A
## **Maximum Ratings**
|**Maximum Ratings**||||
|---|---|---|---|
|**Characteristic**|**Symbol**|**2N6051**|**Unit**|
|Collector-Emitter Voltage|VCEO|80|V|
|CoIIector-Base Voltage|VCBO|||
|Emitter-Base Voltage|VEBO|5||
|Collector Current -Continuous
-Peak|IC|12
20|A|
|Base Current|IB|0.2||
|Total Power Dissipation at TC= 25°C Derate above 25°C|PD|150
0.857|W
W/°C|
|Operating and Storage Junction Temperature Range|TJ, TSTG|-65 to +200|°C|
## **Thermal Characteristics**
**Characteristic Symbol Max. Unit** Thermal Resistance Junction to Case Rθjc 1.17 °C/W ~~——~~
Newark.com/multicomp-pro Farnell.com/multicomp-pro Element14.com/multicomp-pro
17/09/19 V1.0
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## **Darlington Transistor TO-3**
|**Electrical Characteristics(TC = 25°C unless otherwise noted)**|**Electrical Characteristics(TC = 25°C unless otherwise noted)**||||
|---|---|---|---|---|
|**Characteristic**
**Symbol**
**Min.**
**Max.**
**Unit**
**Off Characteristics**
~~a~~
~~CC~~|||||
|Collector-Emitter Sustaining Voltage (1)
(lC= 100mA, lB= 0)|VCEO (sus)|80|-|V|
|Collector Cut off Current
(VCE= 40V, lB= 0)|ICEO|-|1||
|Collector Cut off Current
(VCE= Rated VCEO, VBE (off)= 1.5V)
(VCE= Rated VCEO, VBE (off)= 1.5V, TC= 150°C)|ICEX|-|0.5
5|mA|
|Emitter Cut off Current
(VEB= 5V, IC= 0 )|I|-|2||
|**OnCharacteristics(1)**|||||
|DC Current Gain
(IC= 6A, VCE= 3V) (IC= 12A, VCE= 3V)|hFE|750
100|18,000|-|
|Collector-Emitter Saturation Voltage
(IC= 6A, lB= 24mA) (IC= 12A, lB= 120mA)|VCE (sat)|-|2
3||
|Base-Emitter On Voltage
(IC= 6A, VCE= 3V)|V|-|2.8|V|
|Base-Emitter Saturation Voltage
(IC= 12A, IB= 120mA)|V|-|4||
|**DynamicCharacteristics**|||||
|Current-Gain-Bandwidth Product (2)
(IC= 500mA, VCE= 3V, f = 1MHz)|f|4|-||
|||||MHz|
|Small-Signal Current Gain
(IC= 5A, VCE= 3V, f = 1.0kHz)|h|300|-||
(1) Pulse Test : Pulse Width ≤300μs, Duty Cycle ≤2.0%.
(2) fT = | hfe | • ftest.
**Power Derating**
**TC, Temperature (°C)**
Newark.com/multicomp-pro Farnell.com/multicomp-pro Element14.com/multicomp-pro
17/09/19 V1.0
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## **Darlington Transistor TO-3**
**==> picture [67 x 9] intentionally omitted <==**
**----- Start of picture text -----**
Switching Time
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**----- Start of picture text -----**
ee eee cee ae rs ce
SO TE TT
.PSS heaton
°CCEI opr
0.1“0.2 0.3 0.5 0.7 1.0 270 3.0iS60 7.0
IC, Collector Current (Amperes)
t, Time (μs)
**----- End of picture text -----**
**==> picture [185 x 192] intentionally omitted <==**
**----- Start of picture text -----**
Capacitances
mene ll
300 SETH AT
| et
~ Cc
Seal il
100PPS Tin
50ET0.1 0.2 05 10 2.0CA}50 10
VR, Reverse Voltage (Volts)
C, Capacitance (pF)
**----- End of picture text -----**
## **Active-Region Safe Operating Area (SOA)**
There are two limitation on the power handling ability of a transistor: average junction temperature and second breakdown safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation i.e., the transistor must not be subjected to greater dissipation than curves indicate.
The data of SOA curve is base on TJ (PK) = 200°C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ (PK) ≤200°C. At high case temperatures, thermal limitation will reduce the power that can be handled to values less than the limitations imposed by second breakdown.
**VCE, Collector Emitter Voltage (Volts)**
**==> picture [411 x 189] intentionally omitted <==**
**----- Start of picture text -----**
DC Current Gain Collector Saturation Region
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ATTAN
eet SRE 44 —
LLIN) UTI
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AUT |rareee ss
PS
#20 30 507010 20 SSS
IC, Collector Current (Amperes) IB, Base Current (mA)
VCE, Collector Emitter Voltage (Volts)
**----- End of picture text -----**
**IC, Collector Current (Amperes)**
Newark.com/multicomp-pro Farnell.com/multicomp-pro Element14.com/multicomp-pro
17/09/19 V1.0
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## **Darlington Transistor**
## **TO-3**
**==> picture [202 x 183] intentionally omitted <==**
**----- Start of picture text -----**
" ON " Voltages
TTT
>| i
“L_ EE T
Pimeenl
a
,«__[veeceanatlofie=260“EE ee| 7] |
terse et
ae“O203 | 0.45| 1.0 2.0 3.0 T 5.0|
IC, Collector Current (Amperes)
V Voltage (Volts)
**----- End of picture text -----**
## **TO-3**
|**Dimensions**|**Min.**|**Max.**|
|---|---|---|
|A|38.75|39.96|
|B|19.28|22.23|
|C|7.96|9.28|
|D|11.18|12.19|
|E|25.2|26.67|
|F|0.92|1.09|
|G|1.38|1.62|
|H|29.9|30.4|
|I|16.64|17.3|
|J|3.88|4.36|
|K|10.67|11.18|
**==> picture [94 x 31] intentionally omitted <==**
**----- Start of picture text -----**
Pin 1. Base
2. Emitter
Collector (Case)
**----- End of picture text -----**
Dimensions : Millimetres
## **Part Number Table**
|**Part Number Table**||
|---|---|
|**Description**|**Part Number**|
|Darlington Transistor, TO-3|2N6051|
**Important Notice :** This data sheet and its contents (the “Information”) belong to the members of the AVNET group of companies (the “Group”) or are licensed to it. No licence is granted for the use of it other than for information purposes in connection with the products to which it relates. No licence of any intellectual property rights is granted. The Information is subject to change without notice and replaces all data sheets previously supplied. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any error in or omission from it or for any use made of it. Users of this data sheet should check for themselves the Information and the suitability of the products for their purpose and not make any assumptions based on information included or omitted. Liability for loss or damage resulting from any reliance on the Information or use of it (including liability resulting from negligence or where the Group was aware of the possibility of such loss or damage arising) is excluded. This will not operate to limit or restrict the Group’s liability for death or personal injury resulting from its negligence. Multicomp Pro is the registered trademark of Premier Farnell Limited 2019.
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17/09/19 V1.0
Page <4>
## Links
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- [Supplier page](https://es.farnell.com/en-ES/multicomp-pro/2n6051/darlington-transistor-to-3/dp/1165916)
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