# Bipolar (BJT) Single Transistor, NPN, 60 V, 25 A, 200 W, TO-204, Through Hole ![Product image](https://novapart.co/image/farnell:2535598/) **URL**: https://novapart.co/products/2N5885G/bipolar-bjt-single-transistor-npn-60-v-25-a-200-w **SKU**: 2N5885G **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Single Bipolar Junction Transistors - BJT **Price**: €4.8900 **Stock**: 10+ ## Specifications | Parameter | Value | |---|---| | No. Of Pins | 2Pins | | Product Range | 2NXXXX | | Power Dissipation | 200W | | Dc Current Gain Hfe | 4hFE | | Transistor Mounting | Through Hole | | Transistor Polarity | NPN | | Transition Frequency | 4MHz | | Transistor Case Style | TO-204 | | Dc Current Gain Hfe Min | 4hFE | | Operating Temperature Max | 200°C | | Continuous Collector Current | 25A | | Collector Emitter Voltage Max | 60V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:2535598/) ## 2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN) # **2N5884 and 2N5886 are Preferred Devices** ## Complementary Silicon High−Power Transistors Complementary silicon high−power transistors are designed for general−purpose power amplifier and switching applications. ## **Features** - Low Collector−Emitter Saturation Voltage − VCE(sat) = 1.0 Vdc, (max) at IC = 15 Adc - Low Leakage Current **http://onsemi.com** ## **25 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 − 80 VOLTS, 200 WATTS** - ICEX = 1.0 mAdc (max) at Rated Voltage - Excellent DC Current Gain − - hFE = 20 (min) at IC = 10 Adc - High Current Gain Bandwidth Product − f = 4.0 MHz (min) at IC = 1.0 Adc |f = 4.0 MHz (min) at IC = 1.0 AdcC = 1.0 Adc= 1.0 Adc||| |---|---|---| |• Pb−Free Packages are Available*||| |||**TO−204AA (TO−3)**| |ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**
**MAXIMUM RATINGS**(Note 1)
**ÎÎÎÎÎÎÎÎÎÎÎÎ**
**Rating**
**ÎÎ**
**Symbol**
**ÎÎÎÎ**
**Value**
**Î**
**Unit**
ÎÎÎÎÎÎÎÎÎÎÎ**Î**
**ÎÎÎÎÎÎÎÎÎÎÎÎ**
Collector−Emitter Voltage
2N5883, 2N5885
2N5884, 2N5886
Î**Î**
**ÎÎ**
VCEO
ÎÎÎ**Î**
**ÎÎÎÎ**
60
80
Î
**Î**
Vdc
ÎÎÎÎÎÎÎÎÎÎÎ**Î**
**ÎÎÎÎÎÎÎÎÎÎÎÎ**
Collector−Base Voltage
2N5883, 2N5885
2N5884, 2N5886
Î**Î**
**ÎÎ**
VCB
ÎÎÎ**Î**
**ÎÎÎÎ**
60
80
Î
**Î**
Vdc
**ÎÎÎÎÎÎÎÎÎÎÎÎ**
Emitter−Base Voltage
**ÎÎ**
VEB
**ÎÎÎÎ**
5.0
**Î**
Vdc
ÎÎÎÎÎÎÎÎÎÎÎ**Î**
**ÎÎÎÎÎÎÎÎÎÎÎÎ**
Collector Current −
Continuous
Peak
Î**Î**
**ÎÎ**
IC
ÎÎÎ**Î**
**ÎÎÎÎ**
25
50
Î
**Î**
Adc
**ÎÎÎÎÎÎÎÎÎÎÎÎ**
Base Current
**ÎÎ**
IB
**ÎÎÎÎ**
7.5
**Î**
Adc
ÎÎÎÎÎÎÎÎÎÎÎ**Î**
**ÎÎÎÎÎÎÎÎÎÎÎÎ**
Total Device Dissipation @ TC= 25°C
Derate above 25°C
Î**Î**
**ÎÎ**
PD
ÎÎÎ**Î**
**ÎÎÎÎ**
200
1.15
Î
**Î**
W
W/°C
ÎÎÎÎÎÎÎÎÎÎÎ**Î**
Operating and Storage Junction
Temperature Range
Î**Î**
TJ, Tstg
ÎÎÎ**Î**
–65 to +200
Î
°C
**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**
**THERMAL CHARACTERISTICS**
**ÎÎÎÎÎÎÎÎÎÎÎÎ**
**Characteristic**
**ÎÎ**
**Symbol**
**ÎÎÎÎ**
**Max**
**Î**
**Unit**
ÎÎÎÎÎÎÎÎÎÎÎ**Î**
Thermal Resistance, Junction−to−Case
**Î**
JC
ÎÎÎ**Î**
0.875
Î
°C/W
~~=e ~~
~~———~~||**MARKING DIAGRAM**
**CASE 1−07**
**STYLE 1**
2N588x
= Device Code
x = 3, 4, 5, or 6
G
= Pb−Free Package
A
= Assembly Location
YY
= Year
WW
= Work Week
MEX
= Country of Origin
2N588xG
AYYWW
MEX
v| |Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended||**ORDERING INFORMATION**| |Operating Conditions is not implied. Extended exposure to stresses above the||See detailed ordering and shipping information in the package| |Recommended Operating Conditions may affect device reliability.||dimensions section on page 5 of this data sheet.| ## **ORDERING INFORMATION** See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. 1. Indicates JEDEC registered data. Units and conditions differ on some parameters and re−registration reflecting these changes has been requested. All above values most or exceed present JEDEC registered data. **Preferred** devices are recommended choices for future use and best overall value. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Publication Order Number: **2N5883/D** **1** © Semiconductor Components Industries, LLC, 2006 **March, 2006 − Rev. 11** ## **2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN)** |**2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN)**|**2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN)**|**2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN)**|**2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN)**|**2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN)**|**2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN)**|**2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN)**| |---|---|---|---|---|---|---| |ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**
**ELECTRICAL CHARACTERISTICS**(Note 2) (TC= 25°C unless otherwise noted)
**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**
**Characteristic**
**ÎÎÎ**
**Symbol**
**ÎÎÎ**
**Min**
**ÎÎ**
**Max**
**ÎÎ**
**Unit**
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**
**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**
Collector−Emitter Sustaining Voltage (Note 3)
2N5883, 2N5885
(IC= 200 mAdc, IB= 0)
2N5884, 2N5886
ÎÎ**Î**
**ÎÎÎ**
VCEO(sus)
ÎÎ**Î**
**ÎÎÎ**
60
80
Î**Î**
**ÎÎ**
−
−
ÎÎ
**ÎÎ**
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**
**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**
Collector Cutoff Current
(VCE= 30 Vdc, IB= 0)
2N5883, 2N5885
(VCE= 40 Vdc, IB= 0)
2N5984, 2N5886
ÎÎ**Î**
**ÎÎÎ**
ICEO
ÎÎ**Î**
**ÎÎÎ**
−
−
Î**Î**
**ÎÎ**
2.0
2.0
ÎÎ
**ÎÎ**
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**
**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**
Collector Cutoff Current
(VCE= 60 Vdc, VBE(off)= 1.5 Vdc)
2N5883, 2N5885
(VCE= 80 Vdc, VBE(off)= 1.5 Vdc)
2N5884, 2N5886
(VCE= 60 Vdc, VBE(off)= 1.5 Vdc, TC= 150°C)
2N5883, 2N5885
(VCE= 80 Vdc, VBE(off)= 1.5 Vdc, TC= 150°C)
2N5884, 2N5886
ÎÎ**Î**
ÎÎ**Î**
**ÎÎÎ**
ICEX
ÎÎ**Î**
ÎÎ**Î**
**ÎÎÎ**
−
−
−
−
Î**Î**
Î**Î**
**ÎÎ**
1.0
1.0
10
10
ÎÎ
ÎÎ
**ÎÎ**
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**
**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**
Collector Cutoff Current
(VCB= 60 Vdc, IE= 0)
2N5883, 2N5885
(VCB= 80 Vdc, IE= 0)
2N5884, 2N5886
ÎÎ**Î**
ÎÎ**Î**
**ÎÎÎ**
ICBO
ÎÎ**Î**
ÎÎ**Î**
**ÎÎÎ**
−
−
Î**Î**
Î**Î**
**ÎÎ**
1.0
1.0
ÎÎ
ÎÎ
**ÎÎ**
mAdc
**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**
Emitter Cutoff Current (VEB= 5.0 Vdc, IC= 0)
**ÎÎÎ**
IEBO
**ÎÎÎ**
−
**ÎÎ**
1.0
**ÎÎ**
mAdc
**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**
**ON CHARACTERISTICS**
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**
**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**
DC Current Gain (Note 3)
(IC= 3.0 Adc, VCE= 4.0 Vdc)
(IC= 10 Adc, VCE= 4.0 Vdc)
(IC= 25 Adc, VCE= 4.0 Vdc)
ÎÎ**Î**
**ÎÎÎ**
hFE
ÎÎ**Î**
**ÎÎÎ**
35
20
4.0
Î**Î**
**ÎÎ**
−
100
ÎÎ
**ÎÎ**
−
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**
**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**
Collector−Emitter Saturation Voltage (Note 3)
(IC= 15 Adc, IB= 1.5 Adc)
(IC= 25 Adc, IB= 6.25 Adc)
ÎÎ**Î**
ÎÎ**Î**
**ÎÎÎ**
VCE(sat)
ÎÎ**Î**
ÎÎ**Î**
**ÎÎÎ**
−
−
Î**Î**
Î**Î**
**ÎÎ**
1.0
4.0
ÎÎ
ÎÎ
**ÎÎ**
Vdc
**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**
Base−Emitter Saturation Voltage (Note 3)
(IC= 25 Adc, IB= 6.25 Adc)
**ÎÎÎ**
VBE(sat)
**ÎÎÎ**
−
**ÎÎ**
2.5
**ÎÎ**
Vdc
**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**
Base−Emitter On Voltage (Note 3)
(IC= 10 Adc, VCE= 4.0 Vdc)
**ÎÎÎ**
VBE(on)
**ÎÎÎ**
−
**ÎÎ**
1.5
**ÎÎ**
Vdc
**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**
**DYNAMIC CHARACTERISTICS**
**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**
Current−Gain − Bandwidth Product (Note 4)
(IC= 1.0 Adc, VCE= 10 Vdc, ftest= 1.0 MHz)
**ÎÎÎ**
fT
**ÎÎÎ**
4.0
**ÎÎ**
−
**ÎÎ**
MHz
**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**
Output Capacitance
2N5883, 2N5884
(VCB= 10 Vdc, IE= 0, f = 1.0 MHz)
2N5885, 2N5886
**ÎÎÎ**
Cob
**ÎÎÎ**
−
−
**ÎÎ**
1000
500
**ÎÎ**
pF
**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**
Small−Signal Current Gain (IC= 3.0 Adc, VCE= 4.0 Vdc, ftest= 1.0 kHz)
**ÎÎÎ**
hfe
**ÎÎÎ**
20
**ÎÎ**
−
**ÎÎ**
−
**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**
**SWITCHING CHARACTERISTICS**
**ÎÎÎÎÎÎÎÎÎÎÎ**
Rise Time
ÎÎÎÎÎÎÎÎÎÎÎ**Î**
**Î**ÎÎÎÎÎÎÎÎÎÎÎ**Î**
**Î**ÎÎÎÎÎÎÎÎÎÎÎ**Î**
(VCC= 30 Vdc, IC= 10 Adc, IB1= IB2= 1.0 Adc)
**ÎÎÎ**
tr
**ÎÎÎ**
−
**ÎÎ**
0.7
**ÎÎ**
�s
**ÎÎÎÎÎÎÎÎÎÎ**
Storage Time
**ÎÎÎ**
ts
**ÎÎÎ**
−
**ÎÎ**
1.0
**ÎÎ**
�s
ÎÎÎÎÎÎÎÎÎÎ
Fall Time
ÎÎ**Î**
tf
ÎÎ**Î**
−
Î**Î**
0.8
ÎÎ
�s
2. Indicates JEDEC Registered Data.
3. Pulse Test: Pulse Width�300�s, Duty Cycle�2.0%.||||||| ||**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**
**Characteristic**||**ÎÎÎ**
**Symbol**|**ÎÎ**
**Min**|**Î**
**Max**|**ÎÎ**
**Unit**| ||ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**

Collector−Emitter Sustaining Voltage (Note 3)
2N5883, 2N5885
(IC= 200 mAdc, IB= 0)
2N5884, 2N5886||ÎÎ**Î**

VCEO(sus)|ÎÎ

60
80|**Î**

Î**Î**

−
−|ÎÎ

Vdc| ||**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**

Collector Cutoff Current
(VCE= 30 Vdc, IB= 0)
2N5883, 2N5885
(VCE= 40 Vdc, IB= 0)
2N5984, 2N5886||**ÎÎÎ**

ÎÎ**Î**

ICEO|**ÎÎ**

ÎÎ

−
−|**Î**
**Î**
**Î**

Î**Î**

2.0
2.0|**ÎÎ**

ÎÎ

mAdc| ||**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**
**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**
Collector Cutoff Current
(VCE= 60 Vdc, VBE(off)= 1.5 Vdc)
2N5883, 2N5885
(VCE= 80 Vdc, VBE(off)= 1.5 Vdc)
2N5884, 2N5886
(VCE= 60 Vdc, VBE(off)= 1.5 Vdc, TC= 150°C)
2N5883, 2N5885
(VCE= 80 Vdc, VBE(off)= 1.5 Vdc, TC= 150°C)
2N5884, 2N5886||**ÎÎÎ**

ÎÎ**Î**
ÎÎ**Î**
**ÎÎÎ**
ICEX|**ÎÎ**

ÎÎ
ÎÎ
**ÎÎ**
−
−
−
−|**Î**
**Î**
**Î**
**Î**
Î**Î**
Î**Î**
**ÎÎ**
1.0
1.0
10
10|**ÎÎ**

ÎÎ
ÎÎ
**ÎÎ**
mAdc| ||ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**

Collector Cutoff Current
(VCB= 60 Vdc, IE= 0)
2N5883, 2N5885
(VCB= 80 Vdc, IE= 0)
2N5884, 2N5886||ÎÎ**Î**
ÎÎ**Î**

ICBO|ÎÎ
ÎÎ

−
−|**Î**
**Î**

Î**Î**
Î**Î**

1.0
1.0|ÎÎ
ÎÎ

mAdc| ||**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**

Emitter Cutoff Current (VEB= 5.0 Vdc, IC= 0)||**ÎÎÎ**

IEBO|**ÎÎ**

−|**Î**
**Î**

1.0|**ÎÎ**

mAdc| ||**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**
**ÎÎÎ**
**ÎÎÎ**
**ÎÎ**
**ÎÎ**

**ON CHARACTERISTICS**|||||| ||**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**
**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**
DC Current Gain (Note 3)
(IC= 3.0 Adc, VCE= 4.0 Vdc)
(IC= 10 Adc, VCE= 4.0 Vdc)
(IC= 25 Adc, VCE= 4.0 Vdc)
||**ÎÎÎ**

ÎÎ**Î**
**ÎÎÎ**
hFE

|**ÎÎ**

ÎÎ
**ÎÎ**
35
20
4.0

|**ÎÎ**
**Î**
**Î**
Î**Î**
**ÎÎ**
−
100

|**ÎÎ**

ÎÎ
**ÎÎ**
−

| ||ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**

Collector−Emitter Saturation Voltage (Note 3)
(IC= 15 Adc, IB= 1.5 Adc)
(IC= 25 Adc, IB= 6.25 Adc)||ÎÎ**Î**
ÎÎ**Î**

VCE(sat)|ÎÎ
ÎÎ

−
−|**Î**
**Î**

Î**Î**
Î**Î**

1.0
4.0|ÎÎ
ÎÎ

Vdc| ||**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**

Base−Emitter Saturation Voltage (Note 3)
(IC= 25 Adc, IB= 6.25 Adc)||**ÎÎÎ**

VBE(sat)|**ÎÎ**

−|**Î**
**Î**

2.5|**ÎÎ**

Vdc| ||**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**

Base−Emitter On Voltage (Note 3)
(IC= 10 Adc, VCE= 4.0 Vdc)||**ÎÎÎ**

VBE(on)|**ÎÎ**

−|**Î**
**ÎÎ**

1.5|**ÎÎ**

Vdc| ||**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**

**DYNAMIC CHARACTERISTICS**||**ÎÎÎ**
|**ÎÎ**
|**Î**
**ÎÎ**
|**ÎÎ**
| ||**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**

Current−Gain − Bandwidth Product (Note 4)
(IC= 1.0 Adc, VCE= 10 Vdc, ftest= 1.0 MHz)||**ÎÎÎ**

fT|**ÎÎ**

4.0|**ÎÎ**

−|**ÎÎ**

MHz| ||**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**
**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**
Output Capacitance
2N5883, 2N5884
(VCB= 10 Vdc, IE= 0, f = 1.0 MHz)
2N5885, 2N5886||**ÎÎÎ**

**ÎÎÎ**
Cob|**ÎÎ**

**ÎÎ**
−
−|**Î**
**Î**
**Î**
**Î**
1000
500|**ÎÎ**

**ÎÎ**
pF| ||**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**
Small−Signal Current Gain (IC= 3.0 Adc, VCE= 4.0 Vdc, ftest= 1.0 kHz)||**ÎÎÎ**
hfe|**ÎÎ**
20|**Î**
**Î**
−|**ÎÎ**
−| ||**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**
**SWITCHING CHARACTERISTICS**|||||| ||**ÎÎÎÎÎÎÎÎÎ**
Rise Time|**Î**
ÎÎÎÎÎÎÎÎÎÎÎ**Î**
**Î**ÎÎÎÎÎÎÎÎÎÎÎ**Î**

(VCC= 30 Vdc, IC= 10 Adc, IB1= IB2= 1.0 Adc)|**ÎÎÎ**
tr|**ÎÎ**
−|**Î**
**Î**
0.7|**ÎÎ**
�s| ||**ÎÎÎÎÎÎÎÎÎ**
Storage Time||**ÎÎÎ**
ts|**ÎÎ**
−|**Î**
1.0|**ÎÎ**
�s| ||Fall Time||tf|−|0.8|�s| ||**Î**ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
2. Indicates JEDEC Registered Data.
3. Pulse Test: Pulse Width�300�s, Duty Cycle�2.0%.||ÎÎ**Î**|ÎÎ|Î|ÎÎ| 4. fT = |hfe| • ftest. **==> picture [239 x 170] intentionally omitted <==** **----- Start of picture text -----**
200
175
150
125
100
75
50
25
0
0 25 50 75 100 125 150 175 200
TC, CASE TEMPERATURE (°C)
PD, POWER DISSIPATION (WATTS)
**----- End of picture text -----**
**Figure 1. Power Derating** **http://onsemi.com** **2** **2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN)** **==> picture [490 x 659] intentionally omitted <==** **----- Start of picture text -----**
VCC −�30 V
TURN−ON TIME
RL 3.0
+�2.0 V
10 TO SCOPE
0
RB tr ≤ 20 ns 2.0 TJ = 25°C
tr ≤ −11�V 1.0 IC/IB = 10
20�ns 0.7 VCC = 30 V
10 to 100 �s 0.5 VBE(off) = 2 V
DUTY CYCLE ≈ 2.0%
VCC −�30 V 0.3 tr
TURN−OFF TIME
RL 3.0 0.2
+9.0�V 2N5883, 2N5884 (PNP)
10 TO SCOPE 0.1 2N5885, 2N5886 (NPN)
0 RB tr ≤ 20 ns 0.070.05 td
−11�V
tr ≤ 20�ns 0.03
10 to 100 �s VBB +�7.0 V 0.02
0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30
DUTY CYCLE ≈ 2.0%
IC, COLLECTOR CURRENT (AMPERES)
FOR CURVES OF FIGURES 3 & 6, RB & RL ARE VARIED.
INPUT LEVELS ARE APPROXIMATELY AS SHOWN. Figure 3. Turn−On Time
FOR NPN, REVERSE ALL POLARITIES.
Figure 2. Switching Time Equivalent Test Circuits
1.0
D = 0.5
0.5
0.2
0.2
0.1
�JC(t) = r(t) �JC P(pk)
0.1 0.05 �JC = 0.875°C/W MAX
D CURVES APPLY FOR POWER
0.02
0.05 PULSE TRAIN SHOWN
t1
0.01 READ TIME AT t1 t2
0.02 SINGLE PULSE TJ(pk) − TC = P(pk) �JC(t) DUTY CYCLE, D = t1/t2
0.010.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000 2000
t, TIME (ms)
Figure 4. Thermal Response
100
50 500 �s There are two limitations on the power handling ability of
1�ms a transistor: average junction temperature and second
20 breakdown. Safe operating area curves indicate IC − VCEC − VCE− VCECE
dc 5�ms
10 limits of the transistor that must be observed for reliable
5.0 TJ = 200°C operation; i.e., the transistor must not be subjected to greater
SECOND BREAKDOWN LIMITED dissipation than the curves indicate.
2.0 BONDING WIRE LIMITED The data of Figure 5 is based on TJ(pk) = 200°C; TC isJ(pk) = 200°C; TC is = 200°C; TC is°C; TC isC; TC isC is is
1.0 THERMAL LIMITATION @ TC = 25°C variable depending on conditions. Second breakdown pulse
(SINGLE PULSE)
0.5 limits are valid for duty cycles to 10% provided TJ(pk)J(pk)
CURVES APPLY BELOW RATED VCEO � 200°C. TJ(pk) may be calculated from the data in 200°C. TJ(pk) may be calculated from the data in°C. TJ(pk) may be calculated from the data inC. TJ(pk) may be calculated from the data inJ(pk) may be calculated from the data in may be calculated from the data in
0.2 2N5883, 2N5885 Figure 4. At high case temperatures, thermal limitations will
2N5884, 2N5886
0.1 reduce the power that can be handled to values less than the
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
limitations imposed by second breakdown.
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
μ
t, TIME (��s)
RESISTANCE (NORMALIZED)
r(t), EFFECTIVE TRANSIENT THERMAL
IC, COLLECTOR CURRENT (AMPERES)
**----- End of picture text -----**
There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCEC − VCE− VCECE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on TJ(pk) = 200°C; TC isJ(pk) = 200°C; TC is = 200°C; TC is°C; TC isC; TC isC is is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk)J(pk) � 200°C. TJ(pk) may be calculated from the data in 200°C. TJ(pk) may be calculated from the data in°C. TJ(pk) may be calculated from the data inC. TJ(pk) may be calculated from the data inJ(pk) may be calculated from the data in may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. **Figure 5. Active−Region Safe Operating Area** **http://onsemi.com** **3** ## **2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN)** **==> picture [492 x 404] intentionally omitted <==** **----- Start of picture text -----**
10 3000
7.0 2N5883, 2N5884 (PNP) TJ = 25°C TJ = 25°C
5.0 2N5885, 2N5886 (NPN) VCC = 30 V 2000
3.0 IC/IB = 10 Cob
2.0 ts IB1 = IB2 Cib
1.0 ts 1000
0.7
700 Cib
0.5
tf
0.3
500
0.2 tf 2N5883, 2N5884 (PNP) Cob
2N5885, 2N5886 (NPN)
0.1 300
0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
IC, COLLECTOR CURRENT (AMPERES) VR, REVERSE VOLTAGE (VOLTS)
Figure 6. Turn−Off Time Figure 7. Capacitance
PNP DEVICES NPN DEVICES
2N5883 and 2N5884 2N5885 and 2N5886
1000 1000
700 700 VCE = 4.0 VCE = 4.0 V = 4.0 V
500 TJ = 150°CJ = 150°C = 150°C°CC VCE = 4.0 VCE = 4.0 V = 4.0 V 500 TJ = 150°CJ = 150°C = 150°C°CC
300 300
25°C°CC
200 200
−�55 °CC
100 100 25°C°CC
70 70
50 50
30 30 −�55 °CC
20 20
10 10
0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30
IC, COLLECTOR CURRENT (AMPERES)C, COLLECTOR CURRENT (AMPERES), COLLECTOR CURRENT (AMPERES) IC, COLLECTOR CURRENT (AMPERES)C, COLLECTOR CURRENT (AMPERES), COLLECTOR CURRENT (AMPERES)
μ
t, TIME (��s)
C, CAPACITANCE (pF)
hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN
**----- End of picture text -----**
**==> picture [488 x 391] intentionally omitted <==** **----- Start of picture text -----**
1000 1000
700 700 VCE = 4.0 VCE = 4.0 V = 4.0 V
500 TJ = 150°CJ = 150°C = 150°C°CC VCE = 4.0 VCE = 4.0 V = 4.0 V 500
TJ = 150°CJ = 150°C = 150°C°CC
300 300
25°C°CC
200 200
−�55 °CC
100 100 25°C°CC
70 70
50 50
30 30 −�55 °CC
20 20
10 10
0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30
IC, COLLECTOR CURRENT (AMPERES)C, COLLECTOR CURRENT (AMPERES), COLLECTOR CURRENT (AMPERES) IC, COLLECTOR CURRENT (AMPERES)C, COLLECTOR CURRENT (AMPERES), COLLECTOR CURRENT (AMPERES)
Figure 8. DC Current Gain Figure 9. DC Current Gain
2.0 2.0
TJ = 25°C TJ = 25°C
1.6 1.6
IC = 2.0 A 5.0 A 10 A 20 A IC = 2.0 A 5.0 A 10 A 20 A
1.2 1.2
0.8 0.8
0.4 0.4
0 0
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10
IB, BASE CURRENT (AMPERES) IB, COLLECTOR CURRENT (AMPERES)
hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
**----- End of picture text -----**
**Figure 10. Collector Saturation Region** **Figure 11. Collector Saturation Region** **http://onsemi.com** **4** **2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN)** **==> picture [488 x 173] intentionally omitted <==** **----- Start of picture text -----**
2.0 2.0
TJ = 25°C TJ = 25°C
1.6 1.6
1.2 1.2
0.8 VBE(sat) @ IC/IB = 10 0.8 VBE(sat) @ IC/IB = 10
VBE @ VCE = 4 V VBE @ VCE = 4 V
0.4 0.4
VCE(sat) @ IC/IB = 10 VCE(sat) @ IC/IB = 10
0 0
0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30
IC, COLLECTOR CURRENT (AMPERES) IC, COLLECTOR CURRENT (AMPERES)
V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS)
**----- End of picture text -----**
**Figure 12. “On” Voltages** **Figure 13. “On” Voltages** ## **ORDERING INFORMATION** |**Device**|**Package**|**Shipping**| |---|---|---| |2N5883|TO−204|100 Units / Tray| |2N5883G|TO−204
(Pb−Free)|| |2N5884|TO−204|| |2N5884G|TO−204
(Pb−Free)|| |2N5885|TO−204|| |2N5885G|TO−204
(Pb−Free)|| |2N5886|TO−204|| |2N5886G|TO−204
(Pb−Free)|| **http://onsemi.com** **5** **2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN)** ## **PACKAGE DIMENSIONS** **TO−204 (TO−3)** CASE 1−07 ISSUE Z **==> picture [170 x 190] intentionally omitted <==** **----- Start of picture text -----**
A
N
es l C
−T− SEATING
E PLANE
i TT D 2 PL f= K
0.13 (0.005) M T Q M Y [M]
U
−Y−
V L
2
G B
H 1
−Q−
0.13 (0.005) M T Y M
**----- End of picture text -----**
**==> picture [130 x 187] intentionally omitted <==** **----- Start of picture text -----**
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO−204AA OUTLINE SHALL APPLY.
INCHES MILLIMETERS
DIM MIN MAX MIN MAX
A 1.550 REF 39.37 REF
B −−− 1.050 −−− 26.67
C 0.250 0.335 6.35 8.51
D 0.038 0.043 0.97 1.09
E 0.055 0.070 1.40 1.77
G 0.430 BSC 10.92 BSC
H 0.215 BSC 5.46 BSC
K 0.440 0.480 11.18 12.19
L 0.665 BSC 16.89 BSC
N −−− 0.830 −−− 21.08
Q 0.151 0.165 3.84 4.19
U 1.187 BSC 30.15 BSC
V 0.131 0.188 3.33 4.77
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
**----- End of picture text -----**
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