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2N5885G
Bipolar (BJT) Single Transistor, NPN, 60 V, 25 A, 200 W, TO-204, Through Hole
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: ONSEMI
- Product type: Single Bipolar Junction Transistors - BJT
- No. of Pins: 2Pins
- Product Range: 2NXXXX
- Power Dissipation: 200W
- DC Current Gain hFE: 4hFE
- Transistor Mounting: Through Hole
- Transistor Polarity: NPN
- Transition Frequency: 4MHz
- Transistor Case Style: TO-204
- DC Current Gain hFE Min: 4hFE
- Operating Temperature Max: 200°C
- Continuous Collector Current: 25A
- Collector Emitter Voltage Max: 60V
| Delivery and price | |
|---|---|
| Units per pack | 10 |
| Price | 4.89 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## 2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN) # **2N5884 and 2N5886 are Preferred Devices** ## Complementary Silicon High−Power Transistors Complementary silicon high−power transistors are designed for general−purpose power amplifier and switching applications. ## **Features** - Low Collector−Emitter Saturation Voltage − VCE(sat) = 1.0 Vdc, (max) at IC = 15 Adc - Low Leakage Current **http://onsemi.com** ## **25 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 − 80 VOLTS, 200 WATTS** - ICEX = 1.0 mAdc (max) at Rated Voltage - Excellent DC Current Gain − - hFE = 20 (min) at IC = 10 Adc - High Current Gain Bandwidth Product − f = 4.0 MHz (min) at IC = 1.0 Adc |f = 4.0 MHz (min) at IC = 1.0 AdcC = 1.0 Adc= 1.0 Adc||| |---|---|---| |• Pb−Free Packages are Available*||| |||**TO−204AA (TO−3)**| |ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**MAXIMUM RATINGS**(Note 1)<br>**ÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**Rating**<br>**ÎÎ**<br>**Symbol**<br>**ÎÎÎÎ**<br>**Value**<br>**Î**<br>**Unit**<br>ÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector−Emitter Voltage<br>2N5883, 2N5885<br>2N5884, 2N5886<br>Î**Î**<br>**ÎÎ**<br>VCEO<br>ÎÎÎ**Î**<br>**ÎÎÎÎ**<br>60<br>80<br>Î<br>**Î**<br>Vdc<br>ÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector−Base Voltage<br>2N5883, 2N5885<br>2N5884, 2N5886<br>Î**Î**<br>**ÎÎ**<br>VCB<br>ÎÎÎ**Î**<br>**ÎÎÎÎ**<br>60<br>80<br>Î<br>**Î**<br>Vdc<br>**ÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Emitter−Base Voltage<br>**ÎÎ**<br>VEB<br>**ÎÎÎÎ**<br>5.0<br>**Î**<br>Vdc<br>ÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector Current −<br>Continuous<br>Peak<br>Î**Î**<br>**ÎÎ**<br>IC<br>ÎÎÎ**Î**<br>**ÎÎÎÎ**<br>25<br>50<br>Î<br>**Î**<br>Adc<br>**ÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Base Current<br>**ÎÎ**<br>IB<br>**ÎÎÎÎ**<br>7.5<br>**Î**<br>Adc<br>ÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Total Device Dissipation @ TC= 25°C<br>Derate above 25°C<br>Î**Î**<br>**ÎÎ**<br>PD<br>ÎÎÎ**Î**<br>**ÎÎÎÎ**<br>200<br>1.15<br>Î<br>**Î**<br>W<br>W/°C<br>ÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>Operating and Storage Junction<br>Temperature Range<br>Î**Î**<br>TJ, Tstg<br>ÎÎÎ**Î**<br>–65 to +200<br>Î<br>°C<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**THERMAL CHARACTERISTICS**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**Characteristic**<br>**ÎÎ**<br>**Symbol**<br>**ÎÎÎÎ**<br>**Max**<br>**Î**<br>**Unit**<br>ÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>Thermal Resistance, Junction−to−Case<br>**Î**<br>JC<br>ÎÎÎ**Î**<br>0.875<br>Î<br>°C/W<br>~~=e ~~<br>~~———~~||**MARKING DIAGRAM**<br>**CASE 1−07**<br>**STYLE 1**<br>2N588x<br>= Device Code<br>x = 3, 4, 5, or 6<br>G<br>= Pb−Free Package<br>A<br>= Assembly Location<br>YY<br>= Year<br>WW<br>= Work Week<br>MEX<br>= Country of Origin<br>2N588xG<br>AYYWW<br>MEX<br> v| |Stresses exceeding Maximum Ratings may damage the device. Maximum<br>Ratings are stress ratings only. Functional operation above the Recommended||**ORDERING INFORMATION**| |Operating Conditions is not implied. Extended exposure to stresses above the||See detailed ordering and shipping information in the package| |Recommended Operating Conditions may affect device reliability.||dimensions section on page 5 of this data sheet.| ## **ORDERING INFORMATION** See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. 1. Indicates JEDEC registered data. Units and conditions differ on some parameters and re−registration reflecting these changes has been requested. All above values most or exceed present JEDEC registered data. **Preferred** devices are recommended choices for future use and best overall value. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Publication Order Number: **2N5883/D** **1** © Semiconductor Components Industries, LLC, 2006 **March, 2006 − Rev. 11** ## **2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN)** |**2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN)**|**2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN)**|**2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN)**|**2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN)**|**2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN)**|**2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN)**|**2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN)**| |---|---|---|---|---|---|---| |ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**ELECTRICAL CHARACTERISTICS**(Note 2) (TC= 25°C unless otherwise noted)<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**Characteristic**<br>**ÎÎÎ**<br>**Symbol**<br>**ÎÎÎ**<br>**Min**<br>**ÎÎ**<br>**Max**<br>**ÎÎ**<br>**Unit**<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector−Emitter Sustaining Voltage (Note 3)<br>2N5883, 2N5885<br>(IC= 200 mAdc, IB= 0)<br>2N5884, 2N5886<br>ÎÎ**Î**<br>**ÎÎÎ**<br>VCEO(sus)<br>ÎÎ**Î**<br>**ÎÎÎ**<br>60<br>80<br>Î**Î**<br>**ÎÎ**<br>−<br>−<br>ÎÎ<br>**ÎÎ**<br>Vdc<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector Cutoff Current<br>(VCE= 30 Vdc, IB= 0)<br>2N5883, 2N5885<br>(VCE= 40 Vdc, IB= 0)<br>2N5984, 2N5886<br>ÎÎ**Î**<br>**ÎÎÎ**<br>ICEO<br>ÎÎ**Î**<br>**ÎÎÎ**<br>−<br>−<br>Î**Î**<br>**ÎÎ**<br>2.0<br>2.0<br>ÎÎ<br>**ÎÎ**<br>mAdc<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector Cutoff Current<br>(VCE= 60 Vdc, VBE(off)= 1.5 Vdc)<br>2N5883, 2N5885<br>(VCE= 80 Vdc, VBE(off)= 1.5 Vdc)<br>2N5884, 2N5886<br>(VCE= 60 Vdc, VBE(off)= 1.5 Vdc, TC= 150°C)<br>2N5883, 2N5885<br>(VCE= 80 Vdc, VBE(off)= 1.5 Vdc, TC= 150°C)<br>2N5884, 2N5886<br>ÎÎ**Î**<br>ÎÎ**Î**<br>**ÎÎÎ**<br>ICEX<br>ÎÎ**Î**<br>ÎÎ**Î**<br>**ÎÎÎ**<br>−<br>−<br>−<br>−<br>Î**Î**<br>Î**Î**<br>**ÎÎ**<br>1.0<br>1.0<br>10<br>10<br>ÎÎ<br>ÎÎ<br>**ÎÎ**<br>mAdc<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector Cutoff Current<br>(VCB= 60 Vdc, IE= 0)<br>2N5883, 2N5885<br>(VCB= 80 Vdc, IE= 0)<br>2N5884, 2N5886<br>ÎÎ**Î**<br>ÎÎ**Î**<br>**ÎÎÎ**<br>ICBO<br>ÎÎ**Î**<br>ÎÎ**Î**<br>**ÎÎÎ**<br>−<br>−<br>Î**Î**<br>Î**Î**<br>**ÎÎ**<br>1.0<br>1.0<br>ÎÎ<br>ÎÎ<br>**ÎÎ**<br>mAdc<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Emitter Cutoff Current (VEB= 5.0 Vdc, IC= 0)<br>**ÎÎÎ**<br>IEBO<br>**ÎÎÎ**<br>−<br>**ÎÎ**<br>1.0<br>**ÎÎ**<br>mAdc<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**ON CHARACTERISTICS**<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>DC Current Gain (Note 3)<br>(IC= 3.0 Adc, VCE= 4.0 Vdc)<br>(IC= 10 Adc, VCE= 4.0 Vdc)<br>(IC= 25 Adc, VCE= 4.0 Vdc)<br>ÎÎ**Î**<br>**ÎÎÎ**<br>hFE<br>ÎÎ**Î**<br>**ÎÎÎ**<br>35<br>20<br>4.0<br>Î**Î**<br>**ÎÎ**<br>−<br>100<br>ÎÎ<br>**ÎÎ**<br>−<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector−Emitter Saturation Voltage (Note 3)<br>(IC= 15 Adc, IB= 1.5 Adc)<br>(IC= 25 Adc, IB= 6.25 Adc)<br>ÎÎ**Î**<br>ÎÎ**Î**<br>**ÎÎÎ**<br>VCE(sat)<br>ÎÎ**Î**<br>ÎÎ**Î**<br>**ÎÎÎ**<br>−<br>−<br>Î**Î**<br>Î**Î**<br>**ÎÎ**<br>1.0<br>4.0<br>ÎÎ<br>ÎÎ<br>**ÎÎ**<br>Vdc<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Base−Emitter Saturation Voltage (Note 3)<br>(IC= 25 Adc, IB= 6.25 Adc)<br>**ÎÎÎ**<br>VBE(sat)<br>**ÎÎÎ**<br>−<br>**ÎÎ**<br>2.5<br>**ÎÎ**<br>Vdc<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Base−Emitter On Voltage (Note 3)<br>(IC= 10 Adc, VCE= 4.0 Vdc)<br>**ÎÎÎ**<br>VBE(on)<br>**ÎÎÎ**<br>−<br>**ÎÎ**<br>1.5<br>**ÎÎ**<br>Vdc<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**DYNAMIC CHARACTERISTICS**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Current−Gain − Bandwidth Product (Note 4)<br>(IC= 1.0 Adc, VCE= 10 Vdc, ftest= 1.0 MHz)<br>**ÎÎÎ**<br>fT<br>**ÎÎÎ**<br>4.0<br>**ÎÎ**<br>−<br>**ÎÎ**<br>MHz<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Output Capacitance<br>2N5883, 2N5884<br>(VCB= 10 Vdc, IE= 0, f = 1.0 MHz)<br>2N5885, 2N5886<br>**ÎÎÎ**<br>Cob<br>**ÎÎÎ**<br>−<br>−<br>**ÎÎ**<br>1000<br>500<br>**ÎÎ**<br>pF<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Small−Signal Current Gain (IC= 3.0 Adc, VCE= 4.0 Vdc, ftest= 1.0 kHz)<br>**ÎÎÎ**<br>hfe<br>**ÎÎÎ**<br>20<br>**ÎÎ**<br>−<br>**ÎÎ**<br>−<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**SWITCHING CHARACTERISTICS**<br>**ÎÎÎÎÎÎÎÎÎÎÎ**<br>Rise Time<br>ÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>**Î**ÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>**Î**ÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>(VCC= 30 Vdc, IC= 10 Adc, IB1= IB2= 1.0 Adc)<br>**ÎÎÎ**<br>tr<br>**ÎÎÎ**<br>−<br>**ÎÎ**<br>0.7<br>**ÎÎ**<br>�s<br>**ÎÎÎÎÎÎÎÎÎÎ**<br>Storage Time<br>**ÎÎÎ**<br>ts<br>**ÎÎÎ**<br>−<br>**ÎÎ**<br>1.0<br>**ÎÎ**<br>�s<br>ÎÎÎÎÎÎÎÎÎÎ<br>Fall Time<br>ÎÎ**Î**<br>tf<br>ÎÎ**Î**<br>−<br>Î**Î**<br>0.8<br>ÎÎ<br>�s<br>2. Indicates JEDEC Registered Data.<br>3. Pulse Test: Pulse Width�300�s, Duty Cycle�2.0%.||||||| ||**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**Characteristic**||**ÎÎÎ**<br>**Symbol**|**ÎÎ**<br>**Min**|**Î**<br>**Max**|**ÎÎ**<br>**Unit**| ||ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br><br>Collector−Emitter Sustaining Voltage (Note 3)<br>2N5883, 2N5885<br>(IC= 200 mAdc, IB= 0)<br>2N5884, 2N5886||ÎÎ**Î**<br><br>VCEO(sus)|ÎÎ<br><br>60<br>80|**Î**<br><br>Î**Î**<br><br>−<br>−|ÎÎ<br><br>Vdc| ||**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br><br>Collector Cutoff Current<br>(VCE= 30 Vdc, IB= 0)<br>2N5883, 2N5885<br>(VCE= 40 Vdc, IB= 0)<br>2N5984, 2N5886||**ÎÎÎ**<br><br><br>ÎÎ**Î**<br><br>ICEO|**ÎÎ**<br><br><br>ÎÎ<br><br>−<br>−|**Î**<br>**Î**<br>**Î**<br><br>Î**Î**<br><br>2.0<br>2.0|**ÎÎ**<br><br><br>ÎÎ<br><br>mAdc| ||**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector Cutoff Current<br>(VCE= 60 Vdc, VBE(off)= 1.5 Vdc)<br>2N5883, 2N5885<br>(VCE= 80 Vdc, VBE(off)= 1.5 Vdc)<br>2N5884, 2N5886<br>(VCE= 60 Vdc, VBE(off)= 1.5 Vdc, TC= 150°C)<br>2N5883, 2N5885<br>(VCE= 80 Vdc, VBE(off)= 1.5 Vdc, TC= 150°C)<br>2N5884, 2N5886||**ÎÎÎ**<br><br><br><br>ÎÎ**Î**<br>ÎÎ**Î**<br>**ÎÎÎ**<br>ICEX|**ÎÎ**<br><br><br><br>ÎÎ<br>ÎÎ<br>**ÎÎ**<br>−<br>−<br>−<br>−|**Î**<br>**Î**<br>**Î**<br>**Î**<br>Î**Î**<br>Î**Î**<br>**ÎÎ**<br>1.0<br>1.0<br>10<br>10|**ÎÎ**<br><br><br><br>ÎÎ<br>ÎÎ<br>**ÎÎ**<br>mAdc| ||ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br><br>Collector Cutoff Current<br>(VCB= 60 Vdc, IE= 0)<br>2N5883, 2N5885<br>(VCB= 80 Vdc, IE= 0)<br>2N5884, 2N5886||ÎÎ**Î**<br>ÎÎ**Î**<br><br>ICBO|ÎÎ<br>ÎÎ<br><br>−<br>−|**Î**<br>**Î**<br><br>Î**Î**<br>Î**Î**<br><br>1.0<br>1.0|ÎÎ<br>ÎÎ<br><br>mAdc| ||**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br><br>Emitter Cutoff Current (VEB= 5.0 Vdc, IC= 0)||**ÎÎÎ**<br><br><br>IEBO|**ÎÎ**<br><br><br>−|**Î**<br>**Î**<br><br><br>1.0|**ÎÎ**<br><br><br>mAdc| ||**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**ÎÎÎ**<br>**ÎÎÎ**<br>**ÎÎ**<br>**ÎÎ**<br><br>**ON CHARACTERISTICS**|||||| ||**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>DC Current Gain (Note 3)<br>(IC= 3.0 Adc, VCE= 4.0 Vdc)<br>(IC= 10 Adc, VCE= 4.0 Vdc)<br>(IC= 25 Adc, VCE= 4.0 Vdc)<br>||**ÎÎÎ**<br><br><br>ÎÎ**Î**<br>**ÎÎÎ**<br>hFE<br><br>|**ÎÎ**<br><br><br>ÎÎ<br>**ÎÎ**<br>35<br>20<br>4.0<br><br>|**ÎÎ**<br>**Î**<br>**Î**<br>Î**Î**<br>**ÎÎ**<br>−<br>100<br><br>|**ÎÎ**<br><br><br>ÎÎ<br>**ÎÎ**<br>−<br><br>| ||ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br><br>Collector−Emitter Saturation Voltage (Note 3)<br>(IC= 15 Adc, IB= 1.5 Adc)<br>(IC= 25 Adc, IB= 6.25 Adc)||ÎÎ**Î**<br>ÎÎ**Î**<br><br>VCE(sat)|ÎÎ<br>ÎÎ<br><br>−<br>−|**Î**<br>**Î**<br><br>Î**Î**<br>Î**Î**<br><br>1.0<br>4.0|ÎÎ<br>ÎÎ<br><br>Vdc| ||**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br><br>Base−Emitter Saturation Voltage (Note 3)<br>(IC= 25 Adc, IB= 6.25 Adc)||**ÎÎÎ**<br><br><br>VBE(sat)|**ÎÎ**<br><br><br>−|**Î**<br>**Î**<br><br><br>2.5|**ÎÎ**<br><br><br>Vdc| ||**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br><br>Base−Emitter On Voltage (Note 3)<br>(IC= 10 Adc, VCE= 4.0 Vdc)||**ÎÎÎ**<br><br><br>VBE(on)|**ÎÎ**<br><br><br>−|**Î**<br>**ÎÎ**<br><br><br>1.5|**ÎÎ**<br><br><br>Vdc| ||**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br><br>**DYNAMIC CHARACTERISTICS**||**ÎÎÎ**<br>|**ÎÎ**<br>|**Î**<br>**ÎÎ**<br>|**ÎÎ**<br>| ||**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br><br>Current−Gain − Bandwidth Product (Note 4)<br>(IC= 1.0 Adc, VCE= 10 Vdc, ftest= 1.0 MHz)||**ÎÎÎ**<br><br><br>fT|**ÎÎ**<br><br><br>4.0|**ÎÎ**<br><br><br>−|**ÎÎ**<br><br><br>MHz| ||**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Output Capacitance<br>2N5883, 2N5884<br>(VCB= 10 Vdc, IE= 0, f = 1.0 MHz)<br>2N5885, 2N5886||**ÎÎÎ**<br><br>**ÎÎÎ**<br>Cob|**ÎÎ**<br><br>**ÎÎ**<br>−<br>−|**Î**<br>**Î**<br>**Î**<br>**Î**<br>1000<br>500|**ÎÎ**<br><br>**ÎÎ**<br>pF| ||**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Small−Signal Current Gain (IC= 3.0 Adc, VCE= 4.0 Vdc, ftest= 1.0 kHz)||**ÎÎÎ**<br>hfe|**ÎÎ**<br>20|**Î**<br>**Î**<br>−|**ÎÎ**<br>−| ||**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**SWITCHING CHARACTERISTICS**|||||| ||**ÎÎÎÎÎÎÎÎÎ**<br>Rise Time|**Î**<br>ÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>**Î**ÎÎÎÎÎÎÎÎÎÎÎ**Î**<br><br>(VCC= 30 Vdc, IC= 10 Adc, IB1= IB2= 1.0 Adc)|**ÎÎÎ**<br>tr|**ÎÎ**<br>−|**Î**<br>**Î**<br>0.7|**ÎÎ**<br>�s| ||**ÎÎÎÎÎÎÎÎÎ**<br>Storage Time||**ÎÎÎ**<br>ts|**ÎÎ**<br>−|**Î**<br>1.0|**ÎÎ**<br>�s| ||Fall Time||tf|−|0.8|�s| ||**Î**ÎÎÎÎÎÎÎÎÎÎÎ<br>ÎÎÎÎÎÎÎÎÎ<br>2. Indicates JEDEC Registered Data.<br>3. Pulse Test: Pulse Width�300�s, Duty Cycle�2.0%.||ÎÎ**Î**|ÎÎ|Î|ÎÎ| 4. fT = |hfe| • ftest. **==> picture [239 x 170] intentionally omitted <==** **----- Start of picture text -----**<br> 200<br>175<br>150<br>125<br>100<br>75<br>50<br>25<br>0<br>0 25 50 75 100 125 150 175 200<br>TC, CASE TEMPERATURE (°C)<br>PD, POWER DISSIPATION (WATTS)<br>**----- End of picture text -----**<br> **Figure 1. Power Derating** **http://onsemi.com** **2** **2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN)** **==> picture [490 x 659] intentionally omitted <==** **----- Start of picture text -----**<br> VCC −�30 V<br>TURN−ON TIME<br>RL 3.0<br>+�2.0 V<br>10 TO SCOPE<br>0<br>RB tr ≤ 20 ns 2.0 TJ = 25°C<br>tr ≤ −11�V 1.0 IC/IB = 10<br>20�ns 0.7 VCC = 30 V<br>10 to 100 �s 0.5 VBE(off) = 2 V<br>DUTY CYCLE ≈ 2.0%<br>VCC −�30 V 0.3 tr<br>TURN−OFF TIME<br>RL 3.0 0.2<br>+9.0�V 2N5883, 2N5884 (PNP)<br>10 TO SCOPE 0.1 2N5885, 2N5886 (NPN)<br>0 RB tr ≤ 20 ns 0.070.05 td<br>−11�V<br>tr ≤ 20�ns 0.03<br>10 to 100 �s VBB +�7.0 V 0.02<br>0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30<br>DUTY CYCLE ≈ 2.0%<br>IC, COLLECTOR CURRENT (AMPERES)<br>FOR CURVES OF FIGURES 3 & 6, RB & RL ARE VARIED.<br>INPUT LEVELS ARE APPROXIMATELY AS SHOWN. Figure 3. Turn−On Time<br>FOR NPN, REVERSE ALL POLARITIES.<br>Figure 2. Switching Time Equivalent Test Circuits<br>1.0<br>D = 0.5<br>0.5<br>0.2<br>0.2<br>0.1<br>�JC(t) = r(t) �JC P(pk)<br>0.1 0.05 �JC = 0.875°C/W MAX<br>D CURVES APPLY FOR POWER<br>0.02<br>0.05 PULSE TRAIN SHOWN<br>t1<br>0.01 READ TIME AT t1 t2<br>0.02 SINGLE PULSE TJ(pk) − TC = P(pk) �JC(t) DUTY CYCLE, D = t1/t2<br>0.010.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000 2000<br>t, TIME (ms)<br>Figure 4. Thermal Response<br>100<br>50 500 �s There are two limitations on the power handling ability of<br>1�ms a transistor: average junction temperature and second<br>20 breakdown. Safe operating area curves indicate IC − VCEC − VCE− VCECE<br>dc 5�ms<br>10 limits of the transistor that must be observed for reliable<br>5.0 TJ = 200°C operation; i.e., the transistor must not be subjected to greater<br>SECOND BREAKDOWN LIMITED dissipation than the curves indicate.<br>2.0 BONDING WIRE LIMITED The data of Figure 5 is based on TJ(pk) = 200°C; TC isJ(pk) = 200°C; TC is = 200°C; TC is°C; TC isC; TC isC is is<br>1.0 THERMAL LIMITATION @ TC = 25°C variable depending on conditions. Second breakdown pulse<br>(SINGLE PULSE)<br>0.5 limits are valid for duty cycles to 10% provided TJ(pk)J(pk)<br>CURVES APPLY BELOW RATED VCEO � 200°C. TJ(pk) may be calculated from the data in 200°C. TJ(pk) may be calculated from the data in°C. TJ(pk) may be calculated from the data inC. TJ(pk) may be calculated from the data inJ(pk) may be calculated from the data in may be calculated from the data in<br>0.2 2N5883, 2N5885 Figure 4. At high case temperatures, thermal limitations will<br>2N5884, 2N5886<br>0.1 reduce the power that can be handled to values less than the<br>1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100<br>limitations imposed by second breakdown.<br>VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)<br>μ<br>t, TIME (��s)<br>RESISTANCE (NORMALIZED)<br>r(t), EFFECTIVE TRANSIENT THERMAL<br>IC, COLLECTOR CURRENT (AMPERES)<br>**----- End of picture text -----**<br> There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCEC − VCE− VCECE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on TJ(pk) = 200°C; TC isJ(pk) = 200°C; TC is = 200°C; TC is°C; TC isC; TC isC is is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk)J(pk) � 200°C. TJ(pk) may be calculated from the data in 200°C. TJ(pk) may be calculated from the data in°C. TJ(pk) may be calculated from the data inC. TJ(pk) may be calculated from the data inJ(pk) may be calculated from the data in may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. **Figure 5. Active−Region Safe Operating Area** **http://onsemi.com** **3** ## **2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN)** **==> picture [492 x 404] intentionally omitted <==** **----- Start of picture text -----**<br> 10 3000<br>7.0 2N5883, 2N5884 (PNP) TJ = 25°C TJ = 25°C<br>5.0 2N5885, 2N5886 (NPN) VCC = 30 V 2000<br>3.0 IC/IB = 10 Cob<br>2.0 ts IB1 = IB2 Cib<br>1.0 ts 1000<br>0.7<br>700 Cib<br>0.5<br>tf<br>0.3<br>500<br>0.2 tf 2N5883, 2N5884 (PNP) Cob<br>2N5885, 2N5886 (NPN)<br>0.1 300<br>0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100<br>IC, COLLECTOR CURRENT (AMPERES) VR, REVERSE VOLTAGE (VOLTS)<br>Figure 6. Turn−Off Time Figure 7. Capacitance<br>PNP DEVICES NPN DEVICES<br>2N5883 and 2N5884 2N5885 and 2N5886<br>1000 1000<br>700 700 VCE = 4.0 VCE = 4.0 V = 4.0 V<br>500 TJ = 150°CJ = 150°C = 150°C°CC VCE = 4.0 VCE = 4.0 V = 4.0 V 500 TJ = 150°CJ = 150°C = 150°C°CC<br>300 300<br>25°C°CC<br>200 200<br>−�55 °CC<br>100 100 25°C°CC<br>70 70<br>50 50<br>30 30 −�55 °CC<br>20 20<br>10 10<br>0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30<br>IC, COLLECTOR CURRENT (AMPERES)C, COLLECTOR CURRENT (AMPERES), COLLECTOR CURRENT (AMPERES) IC, COLLECTOR CURRENT (AMPERES)C, COLLECTOR CURRENT (AMPERES), COLLECTOR CURRENT (AMPERES)<br>μ<br>t, TIME (��s)<br>C, CAPACITANCE (pF)<br>hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN<br>**----- End of picture text -----**<br> **==> picture [488 x 391] intentionally omitted <==** **----- Start of picture text -----**<br> 1000 1000<br>700 700 VCE = 4.0 VCE = 4.0 V = 4.0 V<br>500 TJ = 150°CJ = 150°C = 150°C°CC VCE = 4.0 VCE = 4.0 V = 4.0 V 500<br>TJ = 150°CJ = 150°C = 150°C°CC<br>300 300<br>25°C°CC<br>200 200<br>−�55 °CC<br>100 100 25°C°CC<br>70 70<br>50 50<br>30 30 −�55 °CC<br>20 20<br>10 10<br>0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30<br>IC, COLLECTOR CURRENT (AMPERES)C, COLLECTOR CURRENT (AMPERES), COLLECTOR CURRENT (AMPERES) IC, COLLECTOR CURRENT (AMPERES)C, COLLECTOR CURRENT (AMPERES), COLLECTOR CURRENT (AMPERES)<br>Figure 8. DC Current Gain Figure 9. DC Current Gain<br>2.0 2.0<br>TJ = 25°C TJ = 25°C<br>1.6 1.6<br>IC = 2.0 A 5.0 A 10 A 20 A IC = 2.0 A 5.0 A 10 A 20 A<br>1.2 1.2<br>0.8 0.8<br>0.4 0.4<br>0 0<br>0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10<br>IB, BASE CURRENT (AMPERES) IB, COLLECTOR CURRENT (AMPERES)<br>hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN<br>VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)<br>**----- End of picture text -----**<br> **Figure 10. Collector Saturation Region** **Figure 11. Collector Saturation Region** **http://onsemi.com** **4** **2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN)** **==> picture [488 x 173] intentionally omitted <==** **----- Start of picture text -----**<br> 2.0 2.0<br>TJ = 25°C TJ = 25°C<br>1.6 1.6<br>1.2 1.2<br>0.8 VBE(sat) @ IC/IB = 10 0.8 VBE(sat) @ IC/IB = 10<br>VBE @ VCE = 4 V VBE @ VCE = 4 V<br>0.4 0.4<br>VCE(sat) @ IC/IB = 10 VCE(sat) @ IC/IB = 10<br>0 0<br>0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30<br>IC, COLLECTOR CURRENT (AMPERES) IC, COLLECTOR CURRENT (AMPERES)<br>V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS)<br>**----- End of picture text -----**<br> **Figure 12. “On” Voltages** **Figure 13. “On” Voltages** ## **ORDERING INFORMATION** |**Device**|**Package**|**Shipping**| |---|---|---| |2N5883|TO−204|100 Units / Tray| |2N5883G|TO−204<br>(Pb−Free)|| |2N5884|TO−204|| |2N5884G|TO−204<br>(Pb−Free)|| |2N5885|TO−204|| |2N5885G|TO−204<br>(Pb−Free)|| |2N5886|TO−204|| |2N5886G|TO−204<br>(Pb−Free)|| **http://onsemi.com** **5** **2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN)** ## **PACKAGE DIMENSIONS** **TO−204 (TO−3)** CASE 1−07 ISSUE Z **==> picture [170 x 190] intentionally omitted <==** **----- Start of picture text -----**<br> A<br>N<br>es l C<br>−T− SEATING<br>E PLANE<br>i TT D 2 PL f= K<br>0.13 (0.005) M T Q M Y [M]<br>U<br>−Y−<br>V L<br>2<br>G B<br>H 1<br>−Q−<br>0.13 (0.005) M T Y M<br>**----- End of picture text -----**<br> **==> picture [130 x 187] intentionally omitted <==** **----- Start of picture text -----**<br> NOTES:<br>1. DIMENSIONING AND TOLERANCING PER ANSI<br>Y14.5M, 1982.<br>2. CONTROLLING DIMENSION: INCH.<br>3. ALL RULES AND NOTES ASSOCIATED WITH<br>REFERENCED TO−204AA OUTLINE SHALL APPLY.<br>INCHES MILLIMETERS<br>DIM MIN MAX MIN MAX<br>A 1.550 REF 39.37 REF<br>B −−− 1.050 −−− 26.67<br>C 0.250 0.335 6.35 8.51<br>D 0.038 0.043 0.97 1.09<br>E 0.055 0.070 1.40 1.77<br>G 0.430 BSC 10.92 BSC<br>H 0.215 BSC 5.46 BSC<br>K 0.440 0.480 11.18 12.19<br>L 0.665 BSC 16.89 BSC<br>N −−− 0.830 −−− 21.08<br>Q 0.151 0.165 3.84 4.19<br>U 1.187 BSC 30.15 BSC<br>V 0.131 0.188 3.33 4.77<br>STYLE 1:<br>PIN 1. BASE<br>2. EMITTER<br>CASE: COLLECTOR<br>**----- End of picture text -----**<br> **ON Semiconductor** and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. ## **PUBLICATION ORDERING INFORMATION** ## **LITERATURE FULFILLMENT** : Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082−1312 USA **Phone** : 480−829−7710 or 800−344−3860 Toll Free USA/Canada **Fax** : 480−829−7709 or 800−344−3867 Toll Free USA/Canada **Email** : orderlit@onsemi.com **ON Semiconductor Website** : http://onsemi.com **N. American Technical Support** : 800−282−9855 Toll Free USA/Canada **Order Literature** : http://www.onsemi.com/litorder **Japan** : ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 For additional information, please contact your **Phone** : 81−3−5773−3850 local Sales Representative. **http://onsemi.com** **2N5883/D** **6**
Updated at February 9, 2023
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