# Bipolar (BJT) Single Transistor, NPN, 120 V, 1 A, 1 W, TO-39, Through Hole

![Product image](https://novapart.co/image/farnell:4575617/)

**URL**: https://novapart.co/products/2N5682/bipolar-bjt-single-transistor-npn-120-v-1-a-w-to
**SKU**: 2N5682
**Manufacturer**: MULTICOMP PRO
**Price**: €0.4060
**Stock**: 500+
**Lead Time**: 134 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | Multicomp Pro Bipolar NPN Transistor |
| Qualification | - |
| Power Dissipation | 1W |
| Transistor Mounting | Through Hole |
| Transistor Polarity | NPN |
| Transition Frequency | 30MHz |
| Transistor Case Style | TO-39 |
| Dc Current Gain Hfe Min | 40hFE |
| Operating Temperature Max | 200°C |
| Continuous Collector Current | 1A |
| Collector Emitter Voltage Max | 120V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:4575617/)

High Voltage Silicon Transistors PNP/NPN 

# **RoHS Compliant** 

**PNP  2N5679, 2N5680 NPN  2N5681, 2N5682** 

## **DEVICE MARKING** 

Full part number 

## **GENERAL DESCRIPTION** 

The 2N5679, 2N5680, 2N5681 2N5682 series devices are complementary silicon power transistors, manufactured by the epitaxial planar process, designed for general-purpose amplifier and switching applications where high voltages are required. TO-39, Metal Can Package. 

## **FEATURE:** 

1. High Voltage VCEO = 120V (Max). 

2. Hermetically sealed device 

3. High current 

**ABSOLUTE MAXIMUM RATINGS** (Ta = 25 ℃ Unless otherwise specified) 

|**PARAMETER**<br>~~ee~~|**PARAMETER**<br>~~ee~~|**SYMBOL**<br>~~ee~~<br>~~ee~~|**VALUE**<br>~~Po~~<br>~~ee~~<br>~~eeeee~~|**VALUE**<br>~~Po~~<br>~~ee~~<br>~~eeeee~~|**UNIT**<br>~~ee~~<br>~~eee~~|
|---|---|---|---|---|---|
||||**2N5679**<br>**2N5681**<br>~~ee~~<br>~~ee~~|**2N5680**<br>**2N5682**<br>~~ee~~<br>~~eee~~||
|Collector - Base Voltage<br>~~I~~||VCBO<br>~~ee~~<br>~~I~~|100<br>~~ee ~~<br>~~I~~|120<br> ~~eee~~<br>~~I~~|V<br>~~eee~~<br>~~I~~|
|Collector - Emitter Voltage<br>~~nO~~||VCEO<br>~~nO~~|100<br>~~nO~~|120<br>~~nO~~|V<br>~~nO~~|
|Emitter - Base Voltage<br>~~a~~||VEBO<br>~~a~~|4.0<br>~~a~~||V<br>~~a~~|
|Continuous Collector Current<br>~~GO~~||IC<br>~~GO~~|1.0<br>~~GO~~||A<br>~~GO~~|
|Base Current<br>~~of~~||IB<br>~~of~~|0.5<br>~~of~~||A<br>~~of~~|
|Total Power Dissipation<br>~~A~~|@TA=25°C<br>~~SO~~|PD<br>~~SO~~|1.0||W|
||Derating above@TA=25°C<br>~~SO~~||5.7||mW/°C|
|Total Power Dissipation<br>~~i~~|@TC=25°C<br>~~SO~~|PD<br>~~SO~~|10.0||W|
||Derating above@TC=25°C<br>~~SO~~||57.0||mW/°C|
|Operating& Storage Junction Temperature Range<br>~~i~~<br>~~SO~~<br>~~GG~~||TJ, Tstg<br>~~SO~~<br>~~GG~~|-65 to +200<br>~~GG~~||°C<br>~~GG~~|
|**THERMAL RESISTANCE**<br>~~GG~~||||||
|Thermal Resistance Junction-to-Ambient<br>~~I~~||RθJA<br>~~I~~|175.0<br>~~I~~||°C/W<br>~~I~~|
|Thermal Resistance Junction-to-Case<br>~~a~~||RθJC<br>~~a~~|17.5<br>~~a~~||°C/W<br>~~a~~|



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High Voltage Silicon Transistors PNP/NPN 

**ELECTRICAL CHARACTERISTICS** (TA = 25°C unless otherwise noted) 

**==> picture [475 x 370] intentionally omitted <==**

**----- Start of picture text -----**<br>
|||||||||||
|---|---|---|---|---|---|---|---|---|---|
|GG|PARAMETER|SYMBOL|TEST CONDITIONS|MIN|TYP.|MAX|UNIT|
|2N5679,|
|100|--|--|V|
|Collector – Emitter Voltage|2N5681|VCEO(SUS)1|IC = 10mA, IB = 0|
|2N5680|
|120|--|--|V|
|2N5682|
|2-2|
|VCE = 100V IE = 0|--|--|1.0|
|—|ICBO|rr|μA|
|VCE = 120V IE = 0|--|--|1.0|
|VCE = 70V IB = 0|--|--|10|
|Collector Cut-Off Current|ICEO|μA|
|VCE = 80V IB = 0|--|--|10|
|I|
|VCE = 100V VBE = 1.5V|--|--|1.0|
|μA|
|ICEX|es|VCE = 120V VBE = 1.5V|ee|--|ee|--|1.0|
|VCE = 100V VBE = 1.5V|--|--|1.0|
|se|Collector Cut-Off Current|TC=150°C|==|VCE = 120V VBE = 1.5V|--|--|=8|1.0|μA|
|QP|Emitter-Cut off Current|IEBO|VEB = 4V, IC = 0|--|--|1.0|μA|
|2N5679,|
|DC Current Gain|2N5681|hFE1|IC = 1.0A, VCE = 2V|5.0|--|
|DC Current Gain|IC = 250mA, VCE = 2V|40|--|160|
|p|o|||
|O|esee|es|ee|
|ee|IC = 250mA, IB = 25mA|--|--|0.6|
|Collector-Emitter Saturation Voltage|VCE(sat) 1|IC = 500mA, IB = 50mA|--|--|1.0|V|
|a|ee|IC = 1.0 A, IB = 200mA|ee|--|ee|--|2.0|
|1|ee|ee|
|Bf|Base Emitter on Voltage|VBE(ON)|———_--|IC = 250mA, VCE = 2V|--|--|1.0|2|
|SMALL SIGNAL CHARACTERISTICS|
|IC = 200mA, VCE = 1.5V,|
|Small Signal Current Gain|hfe|20|--|--|
|f = 1MHz|
|eees|ee|VCB=20V, IE=0,|
|Out-Put Capacitance|Cob|--|--|50|pF|
|f = 1MHz|
|eees|IC = 100mA, V|ee|CE = 10V,|
|Transistors Frequency|ft|30|--|--|MHz|
|f = 10MHz|
|eeee|ee|

**----- End of picture text -----**<br>


## **Notes** 

1. Pulse Width ≤ 380us, δ ≤ 2% 

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High Voltage Silicon Transistors PNP/NPN 

## **PACKAGE DETAILS** 

TO-39 Metal Can Package 

|**DIM**|**MIN**|**MAX**|
|---|---|---|
|A|8.50|9.39|
|B|7.74|8.50|
|C|6.09|6.60|
|D|0.40|0.53|
|E|--|0.88|
|F|2.41|2.66|
|G|4.82|5.33|
|H|0.71|1.86|
|J|0.73|1.02|
|K|12.70|--|
|L|42°||



All Dimension are in mm 

## **PIN CONFIGURATION** 

1. EMITTER 

2. BASE 

3. COLLECTOR 

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## High Voltage Silicon Transistors PNP/NPN 

## **Recommended Reflow Solder Profiles** 

The recommended reflow solder profiles for Pb and Pb-free devices are shown below. 

Figure 1 shows the recommended solder profile for devices that have Pb-free terminal plating, and where a Pb-free solder is used. 

Figure 2 shows the recommended solder profile for devices with Pb-free terminal plating used with leaded solder or for devices with leaded terminal plating used with leaded solder. 

**==> picture [37 x 9] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 1<br>**----- End of picture text -----**<br>


**==> picture [37 x 9] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 2<br>**----- End of picture text -----**<br>


**Reflow profiles in tabular form** 

||**Reflow profiles in tabular formprofiles in tabular formrofiles in tabular form**||
|---|---|---|
|**Profile Feature**|**Sn-Pb System**|**Pb-Free System**|
|Average Ramp-UpRate|~3°C/second|~3°C/second|
|**Preheat**<br>– Temperature Range<br>– Time|150-170°C<br>60-180 seconds|150-200°C<br>60-180 seconds|
|Time maintained above:<br>– Temperature<br>– Time|200°C<br>30-50 seconds|217°C<br>60-150 seconds|
|Peak Temperature|235°C|260°C max.|
|Time within +0 -5°C of the actual Peak|10 seconds|40 seconds|
|Ramp-Down Rate|3°C/second max.|6°C/second max.|



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## High Voltage Silicon Transistors PNP/NPN 

## **Recommended Wave Solder Profiles** 

The Recommended solder Profile for Devices with Pb-free terminal plating where a Pb-free solder is used 

The Recommended solder Profile for Devices with Pb-free terminal plating used with leaded solder, or for devices with leaded terminal plating used with leaded solder 

## **Wave Profiles in Tabular Form** 

||**Wave Profiles in Tabular Form**||
|---|---|---|
|**Profile Feature**|**Sn-Pb System**|**Pb-free System**|
|Average Ramp-UpRate|~200°C/second|~200°C/second|
|The heatingrate during preheat|Typical 1-2, Max 4°C/sec|Typical 1-2, Max 4°C/Sec|
|Finalpreheat Temperature|Within 125°C of Solder Temp|Within 125°C of Solder Temp|
|Peak Temperature|235°C|260°C max.|
|Time within +0 -5°C of the actual Peak|10 seconds|10 seconds|
|Ramp-Down Rate|5°C/second max.|5°C/second max.|



## **Recommended Product Storage Environment for Discrete Semiconductor Devices** 

This storage environment assumes that the Diodes and transistors are packed properly inside the original packing supplied by Multicomp Pro. 

- ꞏ Temperature 5 °C to 30 °C 

- ꞏ Humidity between 40 to 70 %RH 

- ꞏ Air should be clean. 

- ꞏ Avoid harmful gas or dust. 

- ꞏ Avoid outdoor exposure or storage in areas subject to rain or water spraying. 

- ꞏ Avoid storage in areas subject to corrosive gas or dust. The product shall not be stored in 

- areas exposed to direct sunlight. 

- ꞏ Avoid rapid temperature changes. 

- ꞏ Avoid condensation. 

- ꞏ Mechanical stress such as vibration and impact shall be avoided. 

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## High Voltage Silicon Transistors PNP/NPN 

ꞏ The product shall not be placed directly on the floor. 

ꞏ The product shall be stored in a plain area. They should not be turned upside down. They should not be placed against the wall. 

## **Shelf Life** 

The shelf life of products is the period from product manufacture to shipment to customers. The product can be unconditionally shipped within this period, which is defined as 2 years. 

If products are stored longer than the shelf life of 2 years, the products shall be subjected to quality. 

## **Floor Life the Products and MSL Level** 

The floor life will start when the products are opened from the original packing. For this, the following JEDEC table may be referred: 

|**JEDEC MSL Level**|**JEDEC MSL Level**|**JEDEC MSL Level**|
|---|---|---|
|**Level**|**Time**|**Condition**|
|1|Unlimited|≤30 °C / 85% RH|
|2|1 Year|≤30 °C / 60% RH|
|2a|4 Weeks|≤30 °C / 60% RH|
|3|168 Hours|≤30 °C / 60% RH|
|4|72 Hours|≤30 °C / 60% RH|
|5|48 Hours|≤30 °C / 60% RH|
|5a|24 Hours|≤30 °C / 60% RH|
|6|Time on Label(TOL)|≤30 °C / 60% RH|



## **Part Number Table** 

|**Part Number Table**||
|---|---|
|**Description**|**Part Number**|
|Transistor, PNP, 1A, 100V, TO-39|2N5679|
|Transistor, PNP, 1A, 120V, TO-39|2N5680|
|Transistor, NPN, 1A, 100V, TO-39|2N5681|
|Transistor, NPN, 1A, 120V, TO-39|2N5682|



**Important Notice :** This data sheet and its contents (the “Information”) belong to the members of the AVNET group of companies (the “Group”) or are licensed to it. No licence is granted for the use of it other than for information purposes in connection with the products to which it relates. No licence of any intellectual property rights is granted. The Information is subject to change without notice and replaces all data sheets previously supplied. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any error in or omission from it or for any use made of it. Users of this data sheet should check for themselves the Information and the suitability of the products for their purpose and not make any assumptions based on information included or omitted. Liability for loss or damage resulting from any reliance on the Information or use of it (including liability resulting from negligence or where the Group was aware of the possibility of such loss or damage arising) is excluded. This will not operate to limit or restrict the Group’s liability for death or personal injury resulting from its negligence. Multicomp Pro is the registered trademark of Premier Farnell Limited 2019. 

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## Links

- [View this product on Novapart](https://novapart.co/products/2N5682/bipolar-bjt-single-transistor-npn-120-v-1-a-w-to)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/multicomp-pro/2n5682/transistor-npn-120v-1a-to-39/dp/4575617)
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