# Bipolar (BJT) Single Transistor, NPN, 140 V, 600 mA, 1.5 W, TO-92, Through Hole ![Product image](https://novapart.co/image/farnell:2825077/) **URL**: https://novapart.co/products/2N5550TA/bipolar-bjt-single-transistor-npn-140-v-600-ma-15 **SKU**: 2N5550TA **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Single Bipolar Junction Transistors - BJT **Price**: €0.0460 **Stock**: 1000+ **Lead Time**: 2 days (indicative) ## Description Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:140V; Transition Frequency ft:300MHz; Power Dissipation Pd:1.5W; DC Collector Current:600mA; DC Current Gain hFE:20hFE; Tr ## Specifications | Parameter | Value | |---|---| | Msl | MSL 1 - Unlimited | | Svhc | No SVHC (25-Jun-2025) | | No. Of Pins | 3Pins | | Product Range | - | | Qualification | - | | Power Dissipation | 1.5W | | Transistor Mounting | Through Hole | | Transistor Polarity | NPN | | Transition Frequency | 300MHz | | Transistor Case Style | TO-92 | | Dc Current Gain Hfe Min | 20hFE | | Operating Temperature Max | 150°C | | Continuous Collector Current | 600mA | | Collector Emitter Voltage Max | 140V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:2825077/) 2N5550, 2N5551 ## **Preferred Device** ## Amplifier Transistors ## **NPN Silicon** ## **Features** **==> picture [484 x 308] intentionally omitted <==** **----- Start of picture text -----**
||||||||||||||| |---|---|---|---|---|---|---|---|---|---|---|---|---|---| |•|These are Pb−Free Devices*|http://onsemi.com| |COLLECTOR| |3| |MAXIMUM RATINGS| |2| |Rating|Symbol|Value|Unit|BASE| |Collector − Emitter Voltage|VCEO|Vdc| |2N5550|140|&)| |2N5551|160|1| |EMITTER| |Collector − Base Voltage|VCBO|Vdc| |2N5550|160| |2N5551|180| |Emitter − Base Voltage|VEBO|6.0|Vdc|TO−92| |Collector Current − Continuous|IC|600|mAdc|CASE 29| |STYLE 1| |Total Device Dissipation @ TA = 25|°|C|PD|625|mW| |Derate above 25|°|C|5.0|mW/|°|C| |1| |Derate above 25Total Device Dissipation @ T|°|C|C = 25|°|C|PD|1.512|mW/W|°|C|1 23|2|3| |STRAIGHT LEAD|BENT LEAD| |Operating and Storage JunctionTemperature Range|TJ, Tstg|−55 to +150|°|C|BULK PACK|TAPE & REELAMMO PACK| |=e| |THERMAL CHARACTERISTICS| |Characteristic|Symbol|Max|Unit|MARKING DIAGRAM| |Thermal Resistance, Junction−to−Ambient|R|JA|200|°|C/W| |Thermal Resistance, Junction−to−Case|R|JC|83.3|°|C/W| **----- End of picture text -----**
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. **==> picture [93 x 136] intentionally omitted <==** **----- Start of picture text -----**
2N
555x
AYWW
x = 0 or 1
A = Assembly Location
Y = Year
WW = Work Week
= Pb−Free Package
**----- End of picture text -----**
(Note: Microdot may be in either location) ## **ORDERING INFORMATION** See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. > *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. **Preferred** devices are recommended choices for future use and best overall value. Publication Order Number: **1** © Semiconductor Components Industries, LLC, 2007 **March, 2007 − Rev. 5** **2N5550/D** **2N5550, 2N5551** ## **ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) |**ELECTRICAL CHARACTERISTICS**(TA= 25°C unless otherwise noted)||||| |---|---|---|---|---| |**Characteristic**|**Symbol**|**Min**|**Max**|**Unit**| |**OFF CHARACTERISTICS**||||| |Collector−Emitter Breakdown Voltage (Note 1)
(IC= 1.0 mAdc, IB= 0)
2N5550
2N5551|V(BR)CEO|140
160|−
−|Vdc| |Collector−Base Breakdown Voltage
(IC= 100�Adc, IE= 0 )
2N5550
2N5551|V(BR)CBO|160
180|−
−|Vdc| |Emitter−Base Breakdown Voltage
(IE= 10�Adc, IC= 0)|V(BR)EBO|6.0|−|Vdc| |Collector Cutoff Current
(VCB= 100 Vdc, IE= 0)
2N5550
(VCB= 120 Vdc, IE= 0)
2N5551
(VCB= 100 Vdc, IE= 0, TA= 100°C)
2N5550
(VCB= 120 Vdc, IE= 0, TA= 100°C)
2N5551|ICBO|−
−
−
−|100
50
100
50|nAdc
�Adc| |Emitter Cutoff Current
(VEB= 4.0 Vdc, IC= 0)|IEBO|−|50|nAdc| |**ON CHARACTERISTICS**(Note 1)||||| |DC Current Gain
(IC= 1.0 mAdc, VCE= 5.0 Vdc)
2N5550
2N5551
(IC= 10 mAdc, VCE= 5.0 Vdc)
2N5550
2N5551
(IC= 50 mAdc, VCE= 5.0 Vdc)
2N5550
2N5551|hFE|60
80
60
80
20
30|−
−
250
250
−
−|−| |Collector−Emitter Saturation Voltage
(IC= 10 mAdc, IB= 1.0 mAdc)
Both Types
(IC= 50 mAdc, IB= 5.0 mAdc)
2N5550
2N5551|VCE(sat)|−
−
−|0.15
0.25
0.20|Vdc| |Base−Emitter Saturation Voltage
(IC= 10 mAdc, IB= 1.0 mAdc)
Both Types
(IC= 50 mAdc, IB= 5.0 mAdc)
2N5550
2N5551|VBE(sat)|−
−
−|1.0
1.2
1.0|Vdc| |**SMALL−SIGNAL CHARACTERISTICS**||||| |Current−Gain — Bandwidth Product
(IC= 10 mAdc, VCE= 10 Vdc, f = 100 MHz)|fT|100|300|MHz| |Output Capacitance
(VCB= 10 Vdc, IE= 0, f = 1.0 MHz)|Cobo|−|6.0|pF| |Input Capacitance
(VEB= 0.5 Vdc, IC= 0, f = 1.0 MHz)
2N5550
2N5551|Cibo|−
−|30
20|pF| |Small−Signal Current Gain
(IC= 1.0 mAdc, VCE= 10 Vdc, f = 1.0 kHz)|hfe|50|200|−| |Noise Figure
(IC= 250�Adc, VCE= 5.0 Vdc, RS= 1.0 k�, f = 1.0 kHz)
2N5550
2N5551|NF|−
−|10
8.0|dB| 1. Pulse Test: Pulse Width ≤ 300 � s, Duty Cycle ≤ 2.0%. **http://onsemi.com** **2** **2N5550, 2N5551** **==> picture [485 x 605] intentionally omitted <==** **----- Start of picture text -----**
500
300200 TJ = 125°C VVCECE = 1.0 V = 5.0 V
25°C
100
−�55°C
50
30
20
10
7.0
5.0
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
IC, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
1.0
0.9
0.8
0.7
IC = 1.0 mA 10 mA 30 mA 100 mA
0.6
0.5
0.4
0.3
0.2
0.1
0
0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50
IB, BASE CURRENT (mA)
Figure 2. Collector Saturation Region
10 [1] 1.0
VCE = 30 V TJ = 25°C
10 [0]
0.8
10 [−1] TJ = 125°C VBE(sat) @ IC/IB = 10
IC = ICES 0.6
10 [−2] 75°C
0.4
10 [−3] REVERSE FORWARD
25°C 0.2
10 [−4]
VCE(sat) @ IC/IB = 10
10 [−5] 0
0.4 0.3 0.2 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100
VBE, BASE−EMITTER VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA)
FE
h , DC CURRENT GAIN
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
μ
V, VOLTAGE (VOLTS)
, COLLECTOR CURRENT (��A)
IC
**----- End of picture text -----**
**Figure 3. Collector Cut−Off Region** **Figure 4. “On” Voltages** **http://onsemi.com** **3** **2N5550, 2N5551** **==> picture [240 x 170] intentionally omitted <==** **----- Start of picture text -----**
2.5
2.0 TJ = −55°C to +135°C
1.5
1.0
0.5 �VC for VCE(sat)
0
−0.5
−1.0
�VB for VBE(sat)
−1.5
−2.0
−2.5
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100
IC, COLLECTOR CURRENT (mA)
°
V, TEMPERATURE COEFFICIENT (mV/ C)
θ
**----- End of picture text -----**
**Figure 5. Temperature Coefficients** **==> picture [488 x 388] intentionally omitted <==** **----- Start of picture text -----**
100
70 TJ = 25°C
50
30
10.2 V VBB VCC
−�8.8 V 30 V 20
Vin
100 3.0 k RC 10
10 �s 0.25 �F RB 7.0 Cibo
INPUT PULSE Vout 5.0
5.1 k
3.0 Cobo
tr, tf ≤ 10 ns Vin 100 1N914
DUTY CYCLE = 1.0% 2.0
1.0
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20
Values Shown are for IC @ 10 mA
VR, REVERSE VOLTAGE (VOLTS)
Figure 6. Switching Time Test Circuit Figure 7. Capacitances
1000 5000
500 ITCJ/I = 25B = 10°C 3000 tf @ VCC = 120 V ITCJ/I = 25B = 10°C
2000
300 tr @ VCC = 120 V tf @ VCC = 30 V
200 1000
tr @ VCC = 30 V
100 500
50 td @ VEB(off) = 1.0 V 300 ts @ VCC = 120 V
200
30 VCC = 120 V
20 100
10 50
0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
C, CAPACITANCE (pF)
t, TIME (ns) t, TIME (ns)
**----- End of picture text -----**
**Figure 8. Turn−On Time** **Figure 9. Turn−Off Time** **http://onsemi.com** **4** **2N5550, 2N5551** ## **ORDERING INFORMATION** |**ORDERING INFORMATION**||| |---|---|---| |**Device**|**Package**|**Shipping**†| |2N5550G|TO−92
(Pb−Free)|5000 Units / Bulk| |2N5550RLRPG|TO−92
(Pb−Free)|2000 / Tape & Ammo Box| |2N5551G|TO−92
(Pb−Free)|5000 Units / Bulk| |2N5551RL1G|TO−92
(Pb−Free)|2000 / Tape & Reel| |2N5551RLRAG|TO−92
(Pb−Free)|| |2N5551RLRPG|TO−92
(Pb−Free)|2000 / Tape & Ammo Box| |2N55551ZL1G|TO−92
(Pb−Free)|| †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. **http://onsemi.com** **5** **2N5550, 2N5551** ## **PACKAGE DIMENSIONS** **TO−92 (TO−226)** CASE 29−11 ISSUE AM **==> picture [393 x 401] intentionally omitted <==** **----- Start of picture text -----**
A NOTES:
B STRAIGHT LEAD 1. DIMENSIONING AND TOLERANCING PER ANSI
BULK PACK Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
| R rn 3. CONTOUR OF PACKAGE BEYOND DIMENSION R
a IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
P BEYOND DIMENSION K MINIMUM.
L
SEATING INCHES MILLIMETERS
PLANE K DIM MIN MAX MIN MAX
ier, — A 0.175 0.205 4.45 5.20
B 0.170 0.210 4.32 5.33
C 0.125 0.165 3.18 4.19
D 0.016 0.021 0.407 0.533
X X D G 0.045 0.055 1.15 1.39
G H 0.095 0.105 2.42 2.66
J 0.015 0.020 0.39 0.50
H J K 0.500 −−− 12.70 −−−
L 0.250 −−− 6.35 −−−
V C N 0.080 0.105 2.04 2.66
a <— ‘’ Ssa P −−− ee 0.100 ee −−− 2.54 |
SECTION X−X R 0.115 −−− 2.93 −−−
1 N V 0.135 −−− 3.43 −−−
N
ae =====
R A B BENT LEAD NOTES:1. DIMENSIONING AND TOLERANCING PER
TAPE & REEL ASME Y14.5M, 1994.
a 2. CONTROLLING DIMENSION:
AMMO PACK MILLIMETERS.
3. CONTOUR OF PACKAGE BEYOND
DIMENSION R IS UNCONTROLLED.
P 4. LEAD DIMENSION IS UNCONTROLLED IN
T P AND BEYOND DIMENSION K MINIMUM.
SEATINGPLANE K DIM MILLIMETERSMIN MAX
A 4.45 5.20
B 4.32 5.33
C 3.18 4.19
a X X D GD 0.402.40 0.542.80
G J 0.39 0.50
J K 12.70 −−−
ti = N 2.04 2.66
“Ute V C 7 PR 1.502.93 4.00−−−
| i SECTION X−X = V 3.43 −−−
1 N STYLE 1:
PIN 1. EMITTER
ic a 2. BASE
3. COLLECTOR
**----- End of picture text -----**
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