# Bipolar (BJT) Single Transistor, PNP, 300 V, 1 A, 1 W, TO-39, Through Hole

![Product image](https://novapart.co/image/farnell:9207090/)

**URL**: https://novapart.co/products/2N5416/bipolar-bjt-single-transistor-pnp-300-v-1-a-w-to
**SKU**: 2N5416
**Manufacturer**: MULTICOMP PRO
**Price**: €0.3520
**Stock**: 1000+
**Lead Time**: 127 days (indicative)

## Description

Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-300V; Transition Frequency ft:15MHz; Power Dissipation Pd:1W; DC Collector Current:-1A; DC Current Gain hFE:30hFE; Transistor Case S

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 1W |
| Transistor Mounting | Through Hole |
| Transistor Polarity | PNP |
| Transition Frequency | 15MHz |
| Transistor Case Style | TO-39 |
| Dc Current Gain Hfe Min | 30hFE |
| Operating Temperature Max | 200°C |
| Continuous Collector Current | 1A |
| Collector Emitter Voltage Max | 300V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:9207090/)

## **PNP High Voltage Transistor** 

- **Features:** • PNP Silicon High Voltage Transistor High speed switching and linear Industrial and Commercial Equipment 

**Pin Configuration** 1. Emitter 2. Base 3. Collector 

## **Absolute Maximum Ratings:** 

## **(Ta = 25°C unless otherwise specified)** 

|**(Ta = 25°C unless otherwise specified)a = 25°C unless otherwise specified) = 25°C unless otherwise specified)**||||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Collector Base Voltage|VCBO|350|V|
|Collector-Emitter Voltage|VCEO|300||
|Emitter-Base Voltage|VEBO|6||
|Collector Current Continuous|IC|1|A|
|Base Current|IB|0.5||
|Power Dissipation at Ta= 25°C<br>Derate above 25°C|PD|1|W<br>mW/°C|
|Power Dissipation at TC= 25°C<br>Derate above 25°C||10|W|
|Operating Temperature|TJ|200|mW/°C|
|Storage Temperature Range|Tstg|-65 to +200|°C|



Newark.com/multicomp-pro Farnell.com/multicomp-pro Element14.com/multicomp-pro 

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## **PNP High Voltage Transistor** 

## **Electrical Characteristics:** 

**(Ta = +25°C unless otherwise specified)** 

|**Parameter**|**Symbol**|**Test Condition**||**Unit**|
|---|---|---|---|---|
|Collector Emitter Breakdown Voltage|BVCEO(sus)*|IC=50mA,IB= 0|>300|V|
|Collector Cut off Current|ICBO|VCB=280V,IE= 0|<50|µA|
||ICEO|VCE=250V,IB= 0|||
|Emitter Cut off Current|IEBO|VEB=6V,IC= 0|<20||
|Collector Emitter Saturation Voltage|VCE(sat)|IC=50mA,IB= 5mA|<2|V|
|Base Emitter Saturation Voltage|VBE(sat)|IC=50mA,IB= 5mA|<1.5||
|DC Current Gain|hFE*|IC=50mA,VCE= 10V|30 - 120|-|
|**Dynamic Characteristics**|||||
|Small Signal Current Gain|hfe|IC=5mA,VCE=10V,f=1kHz|>25|-|
|TransitionFrequency|fT|IC=10mA,VCE=10V,f=5MHz|>15|MHz|
|Output Capacitance|Cob|VCB=10V,IE=0,f=1MHz|<15|pF|
|Input Capacitance|Cib|VEB= VEBOmax.,IC=0,f=1MHz|<75||



*Pulsed:�Pulse�Width�≤30μs,�Duty�Cycle�≤2% 

Newark.com/multicomp-pro Farnell.com/multicomp-pro Element14.com/multicomp-pro 

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## **PNP High Voltage Transistor** 

## **TO-39 Metal Can Package** 

|**Dim.**|**Min.**|**Max.**|
|---|---|---|
|A|8.5|9.39|
|B|7.74|8.5|
|C|6.09|6.6|
|D|0.4|0.53|
|E|-|0.88|
|F|2.41|2.66|
|G|4.82|5.33|
|H|0.71|0.86|
|J|0.73|1.02|
|K|12.7|-|
|L|42°|48°|



Dimensions�:�Millimetres 

**Pin Configuration** 1. Emitter 2. Base 

3. Collector 

## **Part Number Table** 

**Description Part Number** RF�Transistor,�PNP,�TO-39 2N5416 ~~———~~ 

**Important Notice :** This data sheet and its contents (the “Information”) belong to the members of the AVNET group of companies (the “Group”) or are licensed to it. No licence is granted for the�use�of�it�other�than�for�information�purposes�in�connection�with�the�products�to�which�it�relates.�No�licence�of�any�intellectual�property�rights�is�granted.�The�Information�is�subject�to�change� without�notice�and�replaces�all�data�sheets�previously�supplied.�The�Information�supplied�is�believed�to�be�accurate�but�the�Group�assumes�no�responsibility�for�its�accuracy�or�completeness,� any�error�in�or�omission�from�it�or�for�any�use�made�of�it.�Users�of�this�data�sheet�should�check�for�themselves�the�Information�and�the�suitability�of�the�products�for�their�purpose�and�not�make� any�assumptions�based�on�information�included�or�omitted.�Liability�for�loss�or�damage�resulting�from�any�reliance�on�the�Information�or�use�of�it�(including�liability�resulting�from�negligence�or� where�the�Group�was�aware�of�the�possibility�of�such�loss�or�damage�arising)�is�excluded.�This�will�not�operate�to�limit�or�restrict�the�Group’s�liability�for�death�or�personal�injury�resulting�from�its� negligence.�Multicomp�Pro�is�the�registered�trademark�of�Premier�Farnell�Limited�2019. 

Newark.com/multicomp-pro Farnell.com/multicomp-pro Element14.com/multicomp-pro 

25/09/19 V1.0 

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- [Supplier page](https://es.farnell.com/multicomp-pro/2n5416/rf-transistor-pnp-to-39/dp/9207090)
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