2N5401BU

Bipolar (BJT) Single Transistor, PNP, 150 V, 600 mA, 625 mW, TO-92, Through Hole

⚠️ Given the current worldwide supply chain situation, we kindly ask you to take the information shown as a guideline.

Manufacturer: ONSEMI
Product type: Single Bipolar Junction Transistors - BJT
Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-150V; Transition Frequency ft:400MHz; Power Dissipation Pd:625mW; DC Collector Current:-600mA; DC Current Gain hFE:30hFE; Transist
No. of Pins: 3Pins
Product Range: -
Qualification: -
Power Dissipation: 625mW
Transistor Mounting: Through Hole
Transistor Polarity: PNP
Transition Frequency: 400MHz
Transistor Case Style: TO-92
DC Current Gain hFE Min: 30hFE
Operating Temperature Max: 150°C
Continuous Collector Current: 600mA
Collector Emitter Voltage Max: 150V

Delivery and price
Units per pack	10000
Price	0.014 €
Current stock	10+
Lead time	30 days

Datasheet

Updated at March 14, 2026