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2N5401BU

Bipolar (BJT) Single Transistor, PNP, 150 V, 600 mA, 625 mW, TO-92, Through Hole

  • Manufacturer: ONSEMI
  • Product type: Single Bipolar Junction Transistors - BJT
  • Product variants: No other variants available. No other names.
  • No. of Pins: 3Pins
  • Power Dissipation: 625mW
  • DC Current Gain hFE: 30hFE
  • Transistor Mounting: Through Hole
  • Transistor Polarity: PNP
  • Transition Frequency: 400MHz
  • Transistor Case Style: TO-92
  • DC Current Gain hFE Min: 30hFE
  • Operating Temperature Max: 150°C
  • Continuous Collector Current: 600mA
  • Collector Emitter Voltage Max: 150V
Delivery and price
Units per pack 10000
Price 0.015 €
Current stock N/A
Lead time 30 days
PDF File icon Datasheet