# Bipolar (BJT) Single Transistor, NPN, 40 V, 800 mA, 800 mW, TO-39, Through Hole

![Product image](https://novapart.co/image/farnell:1653596/)

**URL**: https://novapart.co/products/2N2218A/bipolar-bjt-single-transistor-npn-40-v-800-ma-mw
**SKU**: 2N2218A
**Manufacturer**: MULTICOMP PRO
**Price**: €0.6930
**Stock**: 10+

## Description

Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; Transition Frequency ft:250MHz; Power Dissipation Pd:800mW; DC Collector Current:800mA; DC Current Gain hFE:20hFE; Transistor Case Styl

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (23-Jan-2024) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 800mW |
| Transistor Mounting | Through Hole |
| Transistor Polarity | NPN |
| Transition Frequency | 250MHz |
| Transistor Case Style | TO-39 |
| Dc Current Gain Hfe Min | 20hFE |
| Operating Temperature Max | 200°C |
| Continuous Collector Current | 800mA |
| Collector Emitter Voltage Max | 40V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1653596/)

## **Bipolar Transistor** 

## ~~ROHS~~ **Description:** 

A Silicon NPN transistor in a TO-39 case intended for high speed switching applications. 

## **Absolute Maximum Ratings:** 

Collector-Base Voltage, Vcbo : 75V Collector-Emitter Voltage, Vceo : 40V Emitter-Base Voltage, Vebo : 6V Continuous Collector Current, Ic : 800mA Total Device Dissipation (Tc = +25ºC), PD : 1.2W Derate above 25ºC : 6.85mW/ºC Total Device Dissipation (Ta = + 25ºC), Pd : 400mW Derate above 25ºC : 2.28mW/ºC Operating Junction Temperature Range, Tj : -65ºC to +200 ºC Storage Temperature Range, Tstg : -65ºC to 200ºC 

## **Electrical Characteristics: (Ta = +25** º **C Unless otherwise specified)** 

|**OFF Characteristics**<br>**Electrical Characteristics: (Ta = +25**<br>Parameter<br>~~a~~|**OFF Characteristics**<br>**Electrical Characteristics: (Ta = +25**<br>Parameter<br>~~a~~|**Electrical Characteristics: (Ta = +25**|**Electrical Characteristics: (Ta = +25C Unless otherwise specified)**<br>Symbol|**C Unless otherwise specified)**<br>Test Conditions<br>Min<br>Max<br>Unit|
|---|---|---|---|---|
||Collector-Emitter Breakdown Voltage||V(br)ceo|Ic = 10mA, Ib = 0<br>40<br>-<br>V|
||Collector-Base Breakdown Voltage||V(br)cbo|Ic = 10µA, Ie = 0<br>75<br>-<br>V|
||Emitter-Base Breakdown Voltage||V(br)ebo|Ie = 10µA, Ic = 0<br>6<br>-<br>V|
||Collector Cut-Off Current||Icbo|Vce = 60V, Ie = 0<br>-<br>0.01<br>µA|
|||||Vce = 60V, Ie = 0, Ta = +150ºC<br>-<br>10<br>µA|
||||Icex|Vce = 60V, Veb(off)= 3V<br>-<br>10<br>µA|
||Emitter Cut-Off Current||Iebo|Veb= 3V, Ic = 0<br>-<br>10<br>µA|
||Base Cut-Off Current||Ibl|Vce= 60V, Veb(off) = 0<br>-<br>20<br>µA|
||**On Characteristics**<br>DC Curent Gain<br>hfe<br>Ic = 0.1mA, Vce = 10V<br>20<br>-<br>-<br>Ic = 1mA, Vce = 10V<br>25<br>-<br>-<br>Ic = 10mA, Vce = 10V<br>35<br>-<br>-<br>Ic = 10mA, Vce = 10V, Ta= -55ºC<br>15<br>-<br>-<br>Ic = 150mA, Vce = 10V (Note 1)<br>40<br>120<br>-<br>Ic = 150mA, Vce = 1V(Note 1)<br>20<br>-<br>-<br>Ic = 500mA, Vce = 10V (Note 1)<br>25<br>-<br>-<br>Collector-Emitter Saturation Voltage<br>( Note 1)<br>Vce(sat)<br>Ic = 150mA, Ib = 5mA<br>-<br>0.3<br>V<br>Ic = 500mA, Ib = 50mA<br>-<br>1<br>V<br>~~)a~~<br>~~es~~<br>~~ee~~<br>~~ee~~<br>~~EEE~~<br>~~es~~||||
||Base-Emitter Saturation Voltage<br>(Note 1)<br>Vbe(sat)<br>Ic = 150mA, Ib= 15mA<br>0.6<br>1.2<br>V<br>Ic= 500mA, Ib= 50mA<br>-<br>2<br>V<br>~~ee~~||||



Newark.com/multicomp-pro Farnell.com/multicomp-pro Element14.com/multicomp-pro 

16/09/19 V1.0 

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## **Bipolar Transistor** 

## **Small-Signal Characteristics** 

|**Small-Signal Characteristics**||||||
|---|---|---|---|---|---|
|Current Gain-Bandwidth Product<br>(Note 2)|ft|Ic= 20mA, Vce= 20V, f = 100MHz, (Note 2)|250|-|MHz|
|Output Capacitance|Cobo|Vcb= 10V, Ie= 0, f = 100kHz|-|8|pF|
|Input Capacitance|Cibo|Veb= 0.5V, Ic= 0, f = 10kHz|-|25|pF|
|Input Impedance|hie|Ic= 1mA, Vce= 10V, f = 1kHz|1|3.5|kΩ|
|||Ic= 10mA, Vce= 10V, f = 1kHz|0.2|1|kΩ|
|Voltage Feedback Ratio|Hre|Ic= 1mA, Vce= 10V, f = 1kHz||5|×10¯4|
|||Ic= 10mA, Vce= 10V, f = 1kHz|-|2.5|×10¯4|
|Output Admittance|hoe|Ic= 1mA, Vce= 10V, f = 1kHz|3|15|µmhos|
|||Ic= 10mA, Vce= 10V, f = 1kHz|10|100|µmhos|
|Collector-Base Time Constant|rb′Cc|Ic= 20mA, Vcb= 20V, f = 31.8MHz|5|150|ps|
|Noise Figure|NF|Ic= 100µA, Vce= 10V, Rs= 1kΩ,f = 1kMHz|-|4|dB|
|Real Part of Common-Emitter High<br>Frequencyinput Impedance|Re(hie)|Ic= 20mA, Vce= 20V, f = 300MHz|-|60|Ω|
|**Switching Characteristics**||||||
|DelayTime|tq|Vcc= 30V, Ic= 150mA, Vce(off)= 0.5V, Ib1=<br>15mA|-|10|ns|
|Rise Time|tr||-|25|ns|
|Storage Time|ts|Vcc= 30V, Ic= 150mA, Ib1= Ib2= 15mA|-|225|ns|
|Fall Time|tf||-|60|ns|
|Active Region Time Constant|Ta|Ic= 150mA, Vce= 30V|-|2.5|ns|



Notes 

1. Pulse Test: Pulse Width[<] =  300s, Duty Cycle[<] =  2%. 

2. ft is defined as the frequency at which IhfeI extrapolates to unity. 

Newark.com/multicomp-pro Farnell.com/multicomp-pro Element14.com/multicomp-pro 

16/09/19 V1.0 

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## **Bipolar Transistor** 

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|**Dim**|**Min**|**Max**|
|---|---|---|
|A|8.5|9.39|
|B|7.74|8.5|
|C|6.09|6.6|
|D|0.4|0.53|
|E|-|0.88|
|F|2.41|2.66|
|G|4.82|5.33|
|H|0.71|0.83|
|J|0.73|0.86|
|K|12.7|-|
|L|42º|48º|



Dimensions : Millimetres 

## **Part Number Table** 

|**Part Number Table**||
|---|---|
|**Description**|**Part Number**|
|Bipolar Transistor|2N2218A|



**Important Notice :** This data sheet and its contents (the “Information”) belong to the members of the AVNET group of companies (the “Group”) or are licensed to it. No licence is granted for the use of it other than for information purposes in connection with the products to which it relates. No licence of any intellectual property rights is granted. The Information is subject to change without notice and replaces all data sheets previously supplied. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any error in or omission from it or for any use made of it. Users of this data sheet should check for themselves the Information and the suitability of the products for their purpose and not make any assumptions based on information included or omitted. Liability for loss or damage resulting from any reliance on the Information or use of it (including liability resulting from negligence or where the Group was aware of the possibility of such loss or damage arising) is excluded. This will not operate to limit or restrict the Group’s liability for death or personal injury resulting from its negligence. Multicomp Pro is the registered trademark of Premier Farnell Limited 2019. 

Newark.com/multicomp-pro Farnell.com/multicomp-pro Element14.com/multicomp-pro 

16/09/19 V1.0 

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- [Supplier page](https://es.farnell.com/multicomp-pro/2n2218a/bipolar-transistor/dp/1653596)
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