# Power MOSFET, N Channel, 150 V, 65 A, 9900 µohm, DFN, Surface Mount

![Product image](https://novapart.co/image/farnell:4472943/)

**URL**: https://novapart.co/products/2KK6040DFN/power-mosfet-n-channel-150-v-65-a-9900-ohm-dfn
**SKU**: 2KK6040DFN
**Manufacturer**: MULTICOMP PRO
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.5630
**Stock**: 1000+
**Lead Time**: 127 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (04-Feb-2026) |
| No. Of Pins | 8Pins |
| Channel Type | N Channel |
| Product Range | Multicomp Pro Power MOSFETs |
| Qualification | - |
| Power Dissipation | 104W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | DFN |
| Drain Source Voltage Vds | 150V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 65A |
| Drain Source On State Resistance | 9900µohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:4472943/)

## **N Channel MOSFET** 

## **Features** 

- VDS(V) = 150V 

- ID = 65A 

- RDS(on) (at VGS = 10V) <9.9mΩ 

- SGT MOSFET 

- Superior UIS performance 

- 100% UIS tested 

- Very low on-resistance 

## **Absolute Maximum Ratings** (TA = 25°C unless otherwise noted) 

|**Absolute Maximum Ratings**(TA = 25°C unless otherwise noted)|**Absolute Maximum Ratings**(TA = 25°C unless otherwise noted)|(TA = 25°C unless otherwise noted)|(TA = 25°C unless otherwise noted)||
|---|---|---|---|---|
|**Parameter**||**Symbol**|**Rating**|**Unit**|
|Drain-Source Voltage||VDS|150|V|
|Gate-Source Voltage||VGS|+20||
|Continuous Drain CurrentA|TC= 25°C|ID|65|A|
||TC= 100°C||41||
|Pulsed Drain CurrentB||IDM|260||
|Single Pulse Avalanche EnergyC||EAS|324|mJ|
|Power Dissipation||PD|104|W|
|Thermal Resistance, Junction- to-AmbientD||RθJA|45|mJ|
|Thermal Resistance, Junction- to-Case||RθJC|1.2|°C/W|
|Storage Temperature Range||Tstg|-55 to 150|°C|



Notes: 

A. The max drain current rating is silicon limited 

B. Repetitive Rating: Pulse width limited by maximum junction temperature 

C. L = 0.5 mH, VDD = 50 V, IAS = 36 A, RG = 25 Ω, Starting TJ = 25°C 

D. Mount on minimum PCB layout 

**Electrical Characteristics** (TJ = 25°C unless otherwise specified) 

|**Parameter**<br>~~tt~~|**Symbol**<br>~~tt~~|**Test Conditions**<br>~~tt~~|**Min**<br>~~tt~~|**Typ**<br>~~TTT~~<br>~~tt~~|**Max**<br>~~TTT~~<br>~~tt~~|**Unit**<br>~~TTT~~<br>~~tt~~|
|---|---|---|---|---|---|---|
|**Static Characteristics**<br>~~TTT~~<br>~~tt~~|||||||
|Drain-Source Breakdown Voltage<br>~~|}~~<br>~~tt~~<br>~~ee ee~~|BVDSS<br>~~|}~~<br>~~tt~~<br>~~ee~~|ID=-250μA, VGS=0V<br>~~|}~~<br>~~tt~~<br>~~ee~~|150<br>~~tt~~<br>~~ee~~|~~tt~~|~~tt~~|V<br>~~tt~~|
|Zero Gate Voltage Drain Current<br>~~|}~~<br>~~ee ee~~|IDSS<br>~~|}~~<br>~~ee~~<br>~~ee~~|VDS=-150V, VGS=0V<br>~~|}~~<br>~~ee~~<br>~~ee~~|~~ee~~<br>~~e~~|~~e~~~~**e**~~|1|µA|
|Gate to Source Leakage Current<br>~~ee ee~~<br>~~oe~~|IGSS<br>~~ee~~<br>~~——~~<br>~~ee~~<br>~~————~~|VDS=0V, VGS=±20V<br>~~ee~~<br>~~——~~<br>~~ee~~<br>~~————~~|~~ee~~<br>~~e~~<br>~~————~~|~~e~~~~**e**~~<br>~~————~~|±100<br>~~E~~|nA<br>~~E~~|
|Gate to Source Threshold Voltage<br>~~ee ee~~<br>~~oe~~|VGS(th)<br>~~ee~~<br>~~——~~<br>~~ee~~<br>~~————~~|VDS=VGS, ID=250µA<br>~~ee~~<br>~~——~~<br>~~ee~~<br>~~————~~<br>~~ee~~|2<br>~~ee~~<br>~~e~~<br>~~————~~<br>~~ee~~|3<br>~~e~~~~**e**~~<br>~~————~~<br>~~ee~~|4<br>~~E~~<br>~~ee~~|V<br>~~E~~|
|Static Drain-Source On-Resistance<br>~~oe~~|RDS(On)<br>~~——~~<br>~~ee~~<br>~~————~~|VGS=-10V, ID=20A<br>~~——~~<br>~~ee~~<br>~~————~~<br>~~ee~~|~~e~~<br>~~————~~<br>~~ee~~|8<br>~~e~~~~**e**~~<br>~~————~~<br>~~ee~~|9.9<br>~~E~~<br>~~ee~~|mΩ<br>~~E~~|
|**Dynamic Characteristics**<br>~~oe ——~~<br>~~ee e~~~~**e**~~<br>~~————~~<br>~~E~~<br>~~—______|__~~<br>~~ee ee~~<br>~~POO~~<br>~~_—~~<br>~~TTTT~~|||||||
|Input Capacitance<br>~~—______|__~~<br>~~_—~~<br>~~a~~|Ciss<br>~~—______|__~~<br>~~_—~~<br>~~a~~|VGS=0V, VDS=75V, F=1MHz<br>~~TT~~<br>~~**e**~~|~~TT~~<br>~~**e**e~~|3690<br>~~TTTT~~<br>~~ee~~|~~TT~~|pF|
|Output Capacitance<br>~~—______|__~~<br>~~_—~~<br>~~a~~|Coss<br>~~—______|__~~<br>~~_—~~<br>~~a~~<br>~~es~~||~~TT~~<br>~~**e**e~~<br>~~s~~|320<br>~~TTTT~~<br>~~ee~~|~~TT~~||
|Reverse Transfer Capacitance<br>~~—______|__~~<br>~~_—~~<br>~~a~~|Crss<br>~~—______|__~~<br>~~_—~~<br>~~a~~<br>~~es~~||~~TT~~<br>~~**e**e~~<br>~~s~~|15<br>~~TT TT~~<br>~~ee~~|~~TT~~<br>~~ee~~||
|Gate Resistance<br>~~a~~|RG<br>~~a~~<br>~~es~~|F = 1 MHz<br>~~**e**~~|~~**e**e ~~<br>~~s~~|1.2<br> ~~ee~~<br>~~e~~|~~e~~<br>~~ee~~|Ω<br>~~e~~|



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## **N Channel MOSFET** 

|**Parameter**|**Symbol**|**Test Conditions**<br>**M**|**in**<br>**Typ**<br>|**Max**<br>**Unit**|
|---|---|---|---|---|
|SwitchingCharacteristics|||||
|Total Gate Charge|Qg<br>Qgs<br>Qgd|VDD=75V, ID=20A VGS=10V,|51|nC|
|Gate Source Charge|||18||
|Gate Drain Charge|||10||
|Turn-On DelayTime|td(on)<br>tr<br>td(of)<br>tf|VDD= 75V, RL= 3.8Ω,<br>VGS= 10V, RG= 6.8Ω|23|nS|
|Turn-On Rise Time|||40||
|Turn-Of DelayTime|||48||
|Turn-Of Fall Time|||22||
|**Drain-Source Diode Characteristics and Maximum Ratings**|||||
|BodyDiode Reverse RecoveryTime|trr<br><br> <br>Qrr|VDD= 75V, IF= 20A<br>dI/dt = 100 A/μs,|86|nS|
|BodyDiode Reverse RecoveryCharge|||265|nC|
|Peak Reverse RecoveryCurrent|IRRM||5||
|Maximum Body-Diode Continuous Current|IS|||65|
|Maximum Body-Diode Current(Pulsed)|ISM|||260|
|Diode Forward Voltage|VSD<br>|VGS= 0 V, IS= 1A|0.68|V|



Notes: 

1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%. 

## **Typical Characterisitics** 

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Newark.com/multicomp-pro Farnell.com/multicomp-pro sg.element14.com/b/multicomp-pro 

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## **N Channel MOSFET** 

## **Typical Characterisitics** 

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Normalized Transient<br>**----- End of picture text -----**<br>


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100<br>80<br>60 125℃ 25℃<br>40<br>20<br>0<br>2468 10<br>VGS (V)<br>Figure 8: On-Resistance vs. Gate-Source Voltage<br>)<br> (m<br>DS(ON)<br>R<br>Capacitance (pF)<br>Power Dissipation (W)<br>**----- End of picture text -----**<br>


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## **Test Circuit and Waveform** 

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Newark.com/multicomp-pro Farnell.com/multicomp-pro sg.element14.com/b/multicomp-pro 

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## **N Channel MOSFET** 

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## **Package Outline Dimensions** 

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|**Symbol**|**Dimensions In Millimeters**|**Dimensions In Millimeters**|**Dimensions In Inches**|**Dimensions In Inches**|
|---|---|---|---|---|
||**Min.**|**Max.**|**Min.**|**Max.**|
|A|0.900|1.000|0.035|0.039|
|A3|0.254REF.||0.010REF.||
|D|4.944|5.096|0.195|0.201|
|E|5.974|6.126|0.235|0.241|
|D1|3.910|4.110|0.154|0.162|
|E1|3.375|3.575|0.133|0.141|
|D2|4.824|4.976|0.190|0.196|
|E2|5.674|5.826|0.223|0.229|
|k|1.190|1.390|0.047|0.055|
|b|0.350|0.450|0.014|0.018|
|e|1.270TYP.||0.050TYP.||
|L|0.559|0.711|0.022|0.028|
|L1|0.424|0.576|0.017|0.023|
|H|0.574|0.726|0.023|0.029|
|θ|10°|12°|10°|12°|



Newark.com/multicomp-pro Farnell.com/multicomp-pro sg.element14.com/b/multicomp-pro 

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## **N Channel MOSFET** 

## **Suggested Pad Layou** 

**Notes** 

1. Controlling dimension: in millimeters. 

2. General tolerance: ±0.05mm 

3. The pad layout is for reference purposes only. 

## **Diagram** 

## **Part Number Table** 

## Dimensions : Millimetres 

|**Part Number Table**||
|---|---|
|**Description**|**Part Number**|
|N Channel MOSFET, 65A, 150V|2KK6040DFN|



**Important Notice :** This data sheet and its contents (the “Information”) belong to the members of the AVNET group of companies (the “Group”) or are licensed to it. No licence is granted for the use of it other than for information purposes in connection with the products to which it relates. No licence of any intellectual property rights is granted. The Information is subject to change without notice and replaces all data sheets previously supplied. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any error in or omission from it or for any use made of it. Users of this data sheet should check for themselves the Information and the suitability of the products for their purpose and not make any assumptions based on information included or omitted. Liability for loss or damage resulting from any reliance on the Information or use of it (including liability resulting from negligence or where the Group was aware of the possibility of such loss or damage arising) is excluded. This will not operate to limit or restrict the Group’s liability for death or personal injury resulting from its negligence. Multicomp Pro is the registered trademark of Premier Farnell Limited 2019. 

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05/08/24 V1.0 

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## Links

- [View this product on Novapart](https://novapart.co/products/2KK6040DFN/power-mosfet-n-channel-150-v-65-a-9900-ohm-dfn)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/multicomp-pro/2kk6040dfn/mosfet-n-channel-150v-65a-dfn/dp/4472943)
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