# Power MOSFET, N Channel, 80 V, 23 A, 0.034 ohm, DFN, Surface Mount

![Product image](https://novapart.co/image/farnell:4472959/)

**URL**: https://novapart.co/products/2KK5098DFN/power-mosfet-n-channel-80-v-23-a-0034-ohm-dfn
**SKU**: 2KK5098DFN
**Manufacturer**: MULTICOMP PRO
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.1770
**Stock**: 1000+
**Lead Time**: 127 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (27-Jun-2024) |
| No. Of Pins | 8Pins |
| Channel Type | N Channel |
| Product Range | Multicomp Pro Power MOSFETs |
| Qualification | - |
| Power Dissipation | 32W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | DFN |
| Drain Source Voltage Vds | 80V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 23A |
| Drain Source On State Resistance | 0.034ohm |
| Gate Source Threshold Voltage Max | 3.5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:4472959/)

## **N Channel MOSFET** 

## **Features** 

- VDS(V) = 80V 

- ID = 23A 

- RDS(on) (at VGS = 10V) < 34mΩ 

- Packaging-PDFN5x6-8 

## **Absolute Maximum Ratings** (Tj = 25°C unless otherwise noted) 

|**Absolute Maximum Ratings**(Tj = 25°C unless otherwise noted)|**Absolute Maximum Ratings**(Tj = 25°C unless otherwise noted)|(Tj = 25°C unless otherwise noted)|(Tj = 25°C unless otherwise noted)||
|---|---|---|---|---|
|**Parameter**||**Symbol**|**Rating**|**Unit**|
|Drain-Source Voltage||VDS|80|V|
|Gate-Source Voltage||VGS|+20||
|Continuous Drain Current|TC= 25°C|ID|23|A|
||TC= 100°C||15||
|Pulsed Drain Current(Note 1)||IDM|92||
|Power Dissipation||PD|32|W|
|Single Pulse Avalanche Energy (Note 2)||EAS|20|mJ|
|Thermal Resistance.Junction- to-Ambient(Note 3)||RθJA|50|°C/W|
|Thermal Resistance.Junction- to-Case(Note 3)||RθJC|3.9||
|Junction Temperature||TJ|150|°C|
|Storage Temperature Range||Tstg|-55 to 150||



Notes: 

1. Repetitive Rating: Pulse width limited by maximum junction temperature. 

2. EAS condition : ID=12A, Rg=25Ω 

3. Surface Mounted on FR4 Board, t ≤ 10 sec. 

**Electrical Characteristics** (TC = 25°C unless otherwise specified) 

|**Parameter**<br>~~es~~|**Symbol**<br>~~GG~~|**Test Conditions**<br>~~GG~~|**Min**<br>~~GG~~|**Typ**|**Max**|**Unit**|
|---|---|---|---|---|---|---|
|**Static Characteristics**<br>~~es GG~~<br>~~pe~~|||||||
|Drain-Source Breakdown Voltage<br>~~a~~|BVDSS<br>~~Q~~|ID=-250μA, VGS=0V<br>~~Q~~|80|||V|
|Zero Gate Voltage Drain Current<br>~~ee~~<br>~~en~~|IDSS<br>~~ee~~<br>~~QO~~|VDS=-80V, VGS=0V<br>~~ee~~<br>~~QO~~|~~ee~~<br>~~QO~~|~~ee~~|1<br>~~ee~~|µA<br>~~ee~~|
|Gate to Source Leakage Current<br>~~en~~<br>~~ee~~|IGSS<br>~~QO~~<br>~~GG~~|VDS=0V, VGS=±20V<br>~~QO~~<br>~~GG~~|~~QO~~<br>~~GG~~||±100|nA|
|Gate to Source Threshold Voltage<br>~~en ~~<br>~~ee~~|VGS(th)<br> ~~QO~~<br>~~GG~~<br>~~a cs~~|VDS=VGS, ID=250µA<br>~~QO~~<br>~~GG~~<br>~~cs~~|2<br>~~QO~~<br>~~GG~~<br>~~ee~~|~~ee~~|3.5|V|
|Static Drain-Source On-Resistance<br>~~ee ~~<br>~~a~~<br>~~ee~~|RDS(On)<br> ~~GG~~<br>~~a~~<br>~~a cs~~<br>~~ee~~<br>|VGS=-10V, ID=12A<br>~~GG~~<br>~~a~~<br>~~cs~~<br>|~~GG~~<br>~~a~~<br>~~ee~~<br>~~ee~~<br>|~~a~~<br>~~ee~~<br>~~ee~~<br>|34<br>~~a~~|mΩ<br>~~a~~|
|||VGS=-6V, ID=6A<br>~~a~~<br>~~cs~~<br>~~ee~~<br>|~~a~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>|~~a~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>|66<br>~~a~~<br>~~ee~~||
|Forward Transconductance<br>~~ee ~~|gFS<br>~~a cs~~<br> ~~GO~~|VDS=-10V, ID=-12A<br>~~cs ~~<br>~~GO~~|8<br> ~~ee~~<br>~~ee~~<br>~~GO~~|~~ee~~<br>~~ee~~<br>~~GO~~||S|
|**Dynamic Characteristics(Note 1)**<br>~~ee ee~~<br>~~ee ~~<br>~~eeee~~<br>~~ee~~|||||||
|Input Capacitance<br>~~ee~~<br>~~ee~~|Ciss<br>~~ee~~<br>~~ee~~|VGS=0V, VDS=-40V, f=1MHz<br>~~ee~~<br>~~re~~|~~ee~~<br>~~re~~|564<br>~~ee~~<br>~~re~~|~~ee~~<br>~~re~~|pF|
|Output Capacitance<br>~~ee ~~<br>~~ee~~|Coss<br> ~~ee~~<br>~~ee~~||~~ee~~<br>~~re~~|156<br>~~ee~~<br>~~re~~|~~ee~~<br>~~re~~||
|Reverse Transfer Capacitance<br>~~ee ~~|Crss<br> ~~ee~~||~~re~~|7<br>~~re~~|~~re~~||



Newark.com/multicomp-pro 

Farnell.com/multicomp-pro sg.element14.com/b/multicomp-pro 

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## **N Channel MOSFET** 

|**Parameter**|**Symbol**|**Test Conditions**<br>**Min**|**Typ**<br>**Max**|**Unit**|
|---|---|---|---|---|
|Gate Resistance|Rg|f = 1 MHz|1|Ω|
|Turn-On DelayTime|td(on)|VGS= 10V, VDD= 40 V,<br>ID= 12A, RG= 1.6Ω|8<br>3<br>11<br>2|nS|
|Turn-On Rise Time|tr||||
|Turn-Of DelayTime|td(of)||||
|Turn-Of Fall Time|tf||||
|Total Gate Charge|Qg|VGS=10V, VDD=-40V, ID=-12A|6.8<br>2.4<br>1.5|nC|
|Gate Source Charge|Qgs||||
|Gate Drain Charge|Qgd||||
|**Drain-Source Diode Characteristics**|||||
|BodyDiode Reverse RecoveryTime|trr|IF= 12A, dI/dt = 100 A/μs,<br>TJ= 25°C|43|nS|
|BodyDiode Reverse RecoveryCharge|Qrr||41|nC|
|Maximum Body-Diode Continuous Current|IS||23||
|Diode Forward Voltage|VSD|VGS= 0 V, IS= 12 A|0.9<br>1.2||



Notes: 

1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%. 

## **Typical Electrical and Thermal Characteristics** 

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Newark.com/multicomp-pro Farnell.com/multicomp-pro sg.element14.com/b/multicomp-pro 

05/08/24 V1.0 

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## **N Channel MOSFET** 

## **Typical Characterisitics** 

## **Package Outline Dimensions** 

Dimensions : Millimetres 

Newark.com/multicomp-pro Farnell.com/multicomp-pro sg.element14.com/b/multicomp-pro 

05/08/24 V1.0 

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## **N Channel MOSFET** 

## **Suggested Pad Layou** 

**Notes** 1.Controlling dimension: in millimeters. 2.General tolerance: ±0.05mm 3.The pad layout is for reference purposes only. 

## **Diagram** 

## **Part Number Table** 

## Dimensions : Millimetres 

|**Part Number Table**||
|---|---|
|**Description**|**Part Number**|
|N Channel MOSFET, 23A, 80V|2KK5098DFN|



**Important Notice :** This data sheet and its contents (the “Information”) belong to the members of the AVNET group of companies (the “Group”) or are licensed to it. No licence is granted for the use of it other than for information purposes in connection with the products to which it relates. No licence of any intellectual property rights is granted. The Information is subject to change without notice and replaces all data sheets previously supplied. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any error in or omission from it or for any use made of it. Users of this data sheet should check for themselves the Information and the suitability of the products for their purpose and not make any assumptions based on information included or omitted. Liability for loss or damage resulting from any reliance on the Information or use of it (including liability resulting from negligence or where the Group was aware of the possibility of such loss or damage arising) is excluded. This will not operate to limit or restrict the Group’s liability for death or personal injury resulting from its negligence. Multicomp Pro is the registered trademark of Premier Farnell Limited 2019. 

Newark.com/multicomp-pro Farnell.com/multicomp-pro sg.element14.com/b/multicomp-pro 

05/08/24 V1.0 

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- [Supplier page](https://es.farnell.com/multicomp-pro/2kk5098dfn/mosfet-n-channel-80v-23a-dfn/dp/4472959)
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