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2DD2652-7
Bipolar (BJT) Single Transistor, NPN, 12 V, 500 mA, 300 mW, SOT-323, Surface Mount
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- Manufacturer: DIODES INC.
- Product type:
- Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:12V; Transition Frequency ft:260MHz; Power Dissipation Pd:300mW; DC Collector Current:500mA; DC Current Gain hFE:270hFE; Transist
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: -
- Qualification: -
- Power Dissipation: 300mW
- Transistor Mounting: Surface Mount
- Transistor Polarity: NPN
- Transition Frequency: 260MHz
- Transistor Case Style: SOT-323
- DC Current Gain hFE Min: 270hFE
- Operating Temperature Max: 150°C
- Continuous Collector Current: 500mA
- Collector Emitter Voltage Max: 12V
| Delivery and price | |
|---|---|
| Units per pack | 3000 |
| Price | 0.052 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR** Please click here to visit our online s Please click here to visit our online spice pice models database. models database. ## **2DD2652** | ## **Features** - Epitaxial Planar Die Construction - Low Collector-Emitter Saturation Voltage - Ideal for Low Power Amplification and Switching - Complementary PNP Type Available (2DB1689) - Ultra-Small Surface Mount Package - **Lead Free By Design/RoHS Compliant (Note 1)** - **"Green Device" (Note 2)** ## **Mechanical Data** - Case: SOT-323 - Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 - Moisture Sensitivity: Level 1 per J-STD-020D - Terminals: Finish - Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 - Terminal Connections: See Diagram - Marking Information: See Page 3 - Ordering Information: See Page 3 - Weight: 0.006 grams (approximate) **==> picture [157 x 75] intentionally omitted <==** **----- Start of picture text -----**<br> C<br>~y B E<br>Top View Device Schematic<br>**----- End of picture text -----**<br> **Maximum Ratings** @TA = 25°C unless otherwise specified |**Maximum Ratingsgss** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Maximum Ratingsgss** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Maximum Ratingsgss** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Maximum Ratingsgss** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified| |---|---|---|---| ||||| |**Characteristic**|**Symbol **|**Value**|**Unit**| |Collector-Base Voltage|VCBO|15|V| |Collector-Emitter Voltage|VCEO|12|V| |Emitter-Base Voltage|VEBO|6|V| |Collector Current - Continuous|IC|1.5|A| |Peak Pulse Collector Current|ICM|3|A| ## **Thermal Characteristics** |**Thermal Characteristics**|||| |---|---|---|---| |**Characteristic**|**Symbol**|**Value**|**Unit**| |Power Dissipation(Note 3) @TA= 25°C|PD|300|mW| |Thermal Resistance,Junction to Ambient(Note 3) @TA= 25°C|RθJA|417|°C/W| |Power Dissipation(Note 4) @TA= 25°C|PD|500|mW| |Thermal Resistance,Junction to Ambient(Note 4) @TA= 25°C|RθJA|250|°C/W| |Operatingand Storage Temperature Range|TJ,TSTG|-55 to +150|°C| **Electrical Characteristics** @TA = 25°C unless otherwise specified |**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified| |---|---|---|---|---|---|---| |||||||| |**Characteristic**<br>~~GD~~|**Symbol**<br>~~GD~~|**Min**<br>~~GD~~|**Typ**<br>~~GD~~|**Max**<br>~~GD~~<br>~~QO~~|**Unit**<br>~~GD~~<br>~~(OO~~|**Conditions**<br>~~GD~~<br>~~(~~| |**OFF CHARACTERISTICS**<br>~~QO~~<br>~~(OO (~~<br>~~Ce~~||||||| |Collector-Base Breakdown Voltage<br>~~OO~~|V(BR)CBO<br>~~OO~~|15<br>~~OO~~|⎯<br>~~OO~~|⎯<br>~~OO~~|V<br>~~OO~~|IC= 10μA,IE= 0<br>~~OO~~| |Collector-Emitter Breakdown Voltage(Note 5)<br>~~(OQ~~|V(BR)CEO<br>~~(OQ~~|12<br>~~(OQ~~<br>~~OOO~~|⎯<br>~~(OQ~~<br>~~OOO~~|⎯<br>~~(OQ~~<br>~~OOO~~|V<br>~~(OQ~~<br>~~OOO~~|IC= 1mA,IB= 0<br>~~(OQ~~| |Emitter-Base Breakdown Voltage<br>~~a~~|V(BR)EBO<br>~~a~~|6<br>~~a~~<br>~~OOO~~|⎯<br>~~a~~<br>~~OOO~~<br>~~OO~~|⎯<br>~~a~~<br>~~OOO~~<br>~~OO~~|V<br>~~a~~<br>~~OOO~~<br>~~OO~~|IE= 10μA,IC= 0<br>~~a~~| |Collector Cut-Off Current<br>~~a~~|ICBO<br>~~a~~|⎯<br>~~OOO~~<br>~~a~~|⎯<br>~~OOO~~<br>~~a~~<br>~~OO~~|0.1<br>~~OOO~~<br>~~a~~<br>~~OO~~|μA<br>~~OOO~~<br>~~a~~<br>~~OO~~|VCB= 15V,IE= 0<br>~~a~~| |Emitter Cut-Off Current<br>~~GO~~|IEBO<br>~~GO~~|⎯<br>~~GO~~|⎯<br>~~OO~~<br>~~GO~~|0.1<br>~~OO~~<br>~~GO~~|μA<br>~~OO~~<br>~~GO~~|VEB= 6V,IC= 0<br>~~GO~~| |**ON CHARACTERISTICS (Note 5)**<br>~~Cn~~<br>~~GO~~||||||| |Collector-Emitter Saturation Voltage<br>~~a~~|VCE(SAT)<br>~~a~~|⎯<br>~~a~~|80<br>~~a~~<br>~~GO~~<br>~~GO~~|200<br>~~a~~<br>~~GO~~<br>~~GO~~|mV<br>~~a~~<br>~~GO~~<br>~~GO~~|IC= 500mA,IB= 25mA<br>~~a~~| |DC Current Gain<br>~~a~~|hFE<br>~~a~~|270<br>~~a~~|⎯<br>~~GO~~<br>~~a~~<br>~~GO~~|680<br>~~GO~~<br>~~a~~<br>~~GO~~|⎯<br>~~GO~~<br>~~a~~<br>~~GO~~|VCE= 2V,IC= 200mA<br>~~a~~| |**SMALLSIGNALCHARACTERISTICS**<br>~~GO~~<br>~~Cn~~||||||| |Output Capacitance|Cobo|⎯|11|⎯|pF|VCB= 10V, IE= 0,<br>f = 1MHz| |Current Gain-Bandwidth Product|fT|⎯|260|⎯|MHz|VCE= 2V, IC= 100mA,<br>f = 100MHz| Notes: 1. No purposefully added lead. 2. Diode’s Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 3. Device mounted on FR-4 PCB with minimum recommended pad layout. 4. Device mounted on FR-4 PCB with 1 inch[2] copper pad layout. 5. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%. 1 of 4 **www.diodes.com** 2DD2652 Document number: DS31633 Rev. 2 - 2 December 2008 © Diodes Incorporated **==> picture [562 x 730] intentionally omitted <==** **----- Start of picture text -----**<br> 2DD2652<br>0.6 1.8<br>1.6<br>0.5<br>1.4 IB = 5mA<br>0.4 1.2 IB = 4mA<br>0.3 (Note 4) 1.0 IB = 3mA<br>0.8<br>IB = 2mA<br>0.2 (Note 3) 0.6<br>0.4<br>0.1 IB = 1mA<br>0.2<br>0 0<br>0 25 50 75 100 125 150 175 200 0 0.5 1 1.5 2 2.5 3<br>TA, AMBIENT TEMPERATURE (°C) VCE, COLLECTOR-EMITTER VOLTAGE (V)<br>Fig. 1 Power Dissipation vs. Ambient Temperature Fig. 2 Typical Collector Current<br>vs. Collector-Emitter Voltage<br>1,000 1<br>T A = 150°C<br>IC/IB = 20<br>T A = 85°C<br>TA = 25°C<br>Bo =<br>T A = -55°C 0.1 T A = 150°C<br>TA = 85 ° C<br>100<br>T A = 25°C<br>0.01 TA = -55°C<br>——\ Fd<br>V CE = 2V<br>10 0.001<br>0.1 1 10 100 1,000 10,000 0.1 1 10 100 1,000 10,000<br>IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>Fig. 3 Typical DC Current Gain vs. Collector Current Fig. 4 Typical Collector-Emitter Saturation Voltage<br>vs. Collector Current<br>1.2 1.2<br>VCE = 2V IC/IB = 20<br>1.0 1.0<br>0.8 0.8<br>TA = -55°C<br>TA = -55°C<br>0.6 0.6 T A = 25°C<br>TA = 25°C TA = 85°C<br>0.4 0.4<br>TA = 85°C TA = 150°C<br>0.2 AA 0.2<br>TA = 150°C<br>0 0<br>0.1 1 10 100 1,000 10,000 1 10 100 1,000 10,000<br>IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>Fig. 5 Typical Base-Emitter Turn-On Voltage Fig. 6 Typical Base-Emitter Saturation Voltage<br>vs. Collector Current vs. Collector Current<br>2DD2652 2 of 4 December 2008<br>www.diodes.com © Diodes Incorporated<br>, POWER DISSIPATION (W)<br>PD , COLLECTOR CURRENT (A)IC<br>NEW PRODUCT<br>VOLTAGE (V)<br>, COLLECTOR-EMITTER<br>, DC CURRENT GAIN<br>FE<br>h SATURATION<br>CE(SAT)<br>V<br>, BASE-EMITTER TURN-ON VOLTAGE (V) , BASE-EMITTER SATURATION VOLTAGE (V)<br>BE(ON)<br>V<br>BE(SAT)<br>V<br>**----- End of picture text -----**<br> 2DD2652 Document number: DS31633 Rev. 2 - 2 **2DD2652** **==> picture [214 x 211] intentionally omitted <==** **----- Start of picture text -----**<br> 1,000<br>f = 1MHz<br>100<br>Si<br>Cibo<br>10 =ecH<br>Cobo<br>1<br>0.1 1 10 100<br>VR, REVERSE VOLTAGE (V)<br>Fig. 7 Typical Capacitance Characteristics<br>CAPACITANCE (pF)<br>**----- End of picture text -----**<br> ## **Ordering Information** (Note 6) |**Ordering Informationg Information Information** (Note 6)||| |---|---|---| |**Part Number**|**Case**|**Packaging**| |2DD2652-7|SOT-323|3000/Tape &Reel| Notes: 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. ## **Marking Information** **==> picture [524 x 304] intentionally omitted <==** **----- Start of picture text -----**<br> RN2 = Product Type Marking Code<br>RN2 YM = Date Code Marking<br>Y = Year (ex: V = 2008)<br>M = Month (ex: 9 = September)<br>Date Code Key<br>Year 2008 2009 2010 2011 2012 2013 2014 2015<br>es Code V W X Y Z A B C<br>Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec<br>Code 1 2 3 4 5 6 7 8 9 O N D<br>ee ee ee eeee ee ee ee ee<br>Package Outline Dimensions<br>A<br>SOT-323<br>Dim Min Max Typ<br>B C A 0.25 0.40 0.30<br>B 1.15 1.35 1.30<br>C 2.00 2.20 2.10<br>D - - 0.65<br>Sale G ====<br>G 1.20 1.40 1.30<br>H H 1.80 2.20 2.15<br>J 0.0 0.10 0.05<br>K M K 0.90 1.00 1.00<br>L 0.25 0.40 0.30<br>J M 0.10 0.18 0.11<br>D L<br>α 0° 8° -<br>All Dimensions in mm<br>YM<br>**----- End of picture text -----**<br> 3 of 4 **www.diodes.com** 2DD2652 Document number: DS31633 Rev. 2 - 2 December 2008 © Diodes Incorporated **2DD2652** ## **Suggested Pad Layout** |~~X~~<br>~~E~~<br>Y<br>C<br>Z~~fy e+~~<br>~~Walon~~<br>~~ho~~|**Dimensions**<br>**Z**<br>**X**<br>**Y**<br>**C**<br>**E**||**Value (in mm)**<br>2.8<br>0.7<br>0.9<br>1.9<br>1.0| |---|---|---|---| ## IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. 4 of 4 **www.diodes.com** 2DD2652 Document number: DS31633 Rev. 2 - 2 December 2008 © Diodes Incorporated
Updated at June 6, 2026
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