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2DB1689-7
Bipolar (BJT) Single Transistor, PNP, 12 V, 500 mA, 300 mW, SOT-323, Surface Mount
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: DIODES INC.
- Product type:
- Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:12V; Transition Frequency ft:300MHz; Power Dissipation Pd:300mW; DC Collector Current:500mA; DC Current Gain hFE:270hFE; Transist
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: -
- Qualification: -
- Power Dissipation: 300mW
- Transistor Mounting: Surface Mount
- Transistor Polarity: PNP
- Transition Frequency: 300MHz
- Transistor Case Style: SOT-323
- DC Current Gain hFE Min: 270hFE
- Operating Temperature Max: 150°C
- Continuous Collector Current: 500mA
- Collector Emitter Voltage Max: 12V
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.049 € |
| Current stock | 10+ |
| Lead time | 30 days |
> **PART OBSOLETE - USE ZUMT717 2DB1689** ~~—|~~ ] @& CL **LOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR** ## DODES | ## **Features** - Epitaxial Planar Die Construction - Low Collector-Emitter Saturation Voltage - Ideal for Low Power Amplification and Switching - Complementary NPN Type Available (2DD2652) - Ultra-Small Surface Mount Package - **Lead Free By Design/RoHS Compliant (Note 1)** - **"Green Device" (Note 2)** ## **Mechanical Data** - Case: SOT-323 - Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 - Moisture Sensitivity: Level 1 per J-STD-020D - Terminals: Finish Matte Tin annealed over Alloy42 leadframe. Solderable per MIL-STD-202, Method 208 - Terminal Connections: See Diagram - Marking Information: See Page 3 - Ordering Information: See Page 3 - Weight: 0.006 grams (approximate) Top View **==> picture [57 x 78] intentionally omitted <==** **----- Start of picture text -----**<br> C<br>B E<br>Device Schematic<br>**----- End of picture text -----**<br> **Maximum Ratings** @TA = 25°C unless otherwise specified |**Maximum Ratingsgss** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Maximum Ratingsgss** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Maximum Ratingsgss** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Maximum Ratingsgss** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified| |---|---|---|---| ||||| |**Characteristic**|**Symbol**|**Value**|**Unit**| |Collector-Base Voltage|VCBO|-15|V| |Collector-Emitter Voltage|VCEO|-12|V| |Emitter-Base Voltage|VEBO|-6|V| |Collector Current - Continuous|IC|-1.5|A| |Peak Pulse Collector Current|ICM|-3|A| ## **Thermal Characteristics** **Characteristic Symbol Value Unit** Power Dissipation (Note 3) @ TA = 25°C PD 300 mW Thermal Resistance, Junction to Ambient (Note 3) @ TA = 25°C RθJA 417 °C/W Power Dissipation (Note 4) @ TA = 25°C PD 500 mW Thermal Resistance, Junction to Ambient (Note 4) @ TA = 25°C RθJA 250 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C **Electrical Characteristics** @TA = 25°C unless otherwise specified A = 25°C unless otherwise specified = 25°C unless otherwise specified **Characteristic Symbol Min Typ Max Unit Conditions OFF CHARACTERISTICS** Collector-Base Breakdown Voltage V(BR)CBO -15 V IC = -10µA, IE = 0 ~~SS~~ Collector-Emitter Breakdown Voltage (Note 5) V(BR)CEO -12 V IC = -1mA, IB = 0 ~~ee~~ Emitter-Base Breakdown Voltage V(BR)EBO -6 V IE = -10µA, IC = 0 Collector Cut-Off Current ICBO -0.1 µA VCB = -15V, IE = 0 Emitter Cut-Off Current IEBO -0.1 µA VEB = -6V, IC = 0 ~~See~~ **ON CHARACTERISTICS (Note 5)** Collector-Emitter Saturation Voltage VCE(SAT) -110 -200 mV IC = -500mA, IB = -25mA DC Current Gain hFE 270 680 VCE = -2V, IC = -200mA ~~——————————~~ **SMALL SIGNAL CHARACTERISTICS** Output Capacitance Cobo 8.5 pF VCB = -10V, IE = 0, f = 1MHz ~~a~~ Current Gain-Bandwidth Product fT 300 MHz Vf = 100MHz CE = -2V, IC = -100mA, Notes: 1. No purposefully added lead. 2. Diode’s Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. **Electrical Characteristics** @TA = 25°C unless otherwise specified A = 25°C unless otherwise specified = 25°C unless otherwise specified 3. Device mounted on FR-4 PCB with minimum recommended pad layout. 4. Device mounted on FR-4 PCB with 1 inch[2] copper pad layout. 5. Measured under pulsed conditions. Pulse width = 300µs. Duty cycle ≤2%. 1 of 5 **www.diodes.com** 2DB1689 Document number: DS31639 Rev. 3 - 4 May 2021 © Diodes Incorporated **2DB1689** **==> picture [480 x 675] intentionally omitted <==** **----- Start of picture text -----**<br> 0.6 1.2<br>0.5 1.0 I B = -5mA<br>IB = -4mA<br>0.4 0.8<br>IB = -3mA<br>0.3 (Note 4) 0.6<br>IB = -2mA<br>0.2 (Note 3) 0.4<br>IB = -1mA<br>0.1 0.2<br>0 0<br>0 25 50 75 100 125 150 175 200 0 1 2 3 4 5<br>TA, AMBIENT TEMPERATURE (°C) -VCE, COLLECTOR-EMITTER VOLTAGE (V)<br>Fig. 1 Power Dissipation vs. Ambient Temperature Fig. 2 Typical Collector Current<br>vs. Collector-Emitter Voltage<br>1,000 1<br>TA = 150°C V CE = -2V<br>TA = 85°C<br>TA = 25 ° C IC/IB = 20<br>T A = -55°C<br>TA = 150°C<br>100 0.1 T A = 85°C<br>T A = 25°C<br>T A = -55°C<br>10 0.01<br>0.1 1 10 100 1,000 10,000 0.1 1 10 100 1,000 10,000<br>-IC, COLLECTOR CURRENT (mA) -IC, COLLECTOR CURRENT (mA)<br>Fig. 3 Typical DC Current Gain vs. Collector Current Fig. 4 Typical Collector-Emitter Saturation Voltage<br>vs. Collector Current<br>1.2 1.2<br>VCE = -2V IC/IB = 20<br>1.0 1.0<br>0.8 0.8<br>TA = -55°C TA = -55°C<br>0.6 0.6<br>TA = 25°C TA = 25°C<br>0.4 0.4 T A = 85°C<br>TA = 85°C<br>0.2 TA = 150°C 0.2 T A = 150°C<br>0 0<br>0.1 1 10 100 1,000 10,000 0.1 1 10 100 1,000 10,000<br>-IC, COLLECTOR CURRENT (mA) -IC, COLLECTOR CURRENT (mA)<br>Fig. 5 Typical Base-Emitter Turn-On Voltage Fig. 6 Typical Base-Emitter Saturation Voltage<br>vs. Collector Current vs. Collector Current<br>, POWER DISSIPATION (W)D , COLLECTOR CURRENT (A)C<br>P -I<br>VOLTAGE (V)<br>, COLLECTOR-EMITTER<br>, DC CURRENT GAIN<br>FE<br>h<br>CE(SAT) SATURATION<br>-V<br>, BASE-EMITTER TURN-ON VOLTAGE (V) , BASE-EMITTER SATURATION VOLTAGE (V)<br>BE(ON)<br>-V<br>BE(SAT)<br>-V<br>**----- End of picture text -----**<br> 2 of 5 **www.diodes.com** 2DB1689 Document number: DS31639 Rev. 3 - 4 May 2021 © Diodes Incorporated **2DB1689** : **==> picture [522 x 663] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>f = 1MHz<br>C ibo<br>10<br>C obo<br>1<br>0.1 1 10 100<br>VR, REVERSE VOLTAGE (V)<br>Fig. 7 Typical Capacitance Characteristics<br>Ordering Information (Note 6)<br>Part Number Case Packaging<br>2DB1689-7 SOT-323 3000/Tape & Reel<br>Notes: 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.<br>ia<br>Marking Information<br>= NS<br>ia<br>RP2 = Product Type Marking Code<br>RP2 YM = Date Code Marking<br>Y = Year (ex: V = 2008)<br>M = Month (ex: 9 = September)<br>AL<br>Date Code Key<br>Year 2008 2009 2010 2011 2012 2013 2014 2015<br>Code V W X Y Z A B C<br>Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec<br>Code 1 2 3 4 5 6 7 8 9 O N D<br>SSSI<br>Package Outline Dimensions<br>A<br>SOT-323<br>Dim Min Max Typ<br>B C A 0.25 0.40 0.30<br>B 1.15 1.35 1.30<br>C 2.00 2.20 2.10<br>=== D - - 0.65<br>G<br>G 1.20 1.40 1.30<br>H H 1.80 2.20 2.15<br>J 0.0 0.10 0.05<br>K M K 0.90 1.00 1.00<br>L 0.25 0.40 0.30<br>J M 0.10 0.18 0.11<br>D L<br>α 0° 8° -<br>a All Dimensions in mm a ee<br>CAPACITANCE (pF)<br>YM<br>**----- End of picture text -----**<br> 3 of 5 **www.diodes.com** 2DB1689 Document number: DS31639 Rev. 3 - 4 May 2021 © Diodes Incorporated **2DB1689** **==> picture [428 x 158] intentionally omitted <==** **----- Start of picture text -----**<br> Suggested Pad Layout<br>Y<br>Dimensions Value (in mm)<br>Z Z 2.8<br>C<br>X 0.7<br>Y 0.9<br>C 1.9<br>E 1.0<br>oa<br>X E<br>**----- End of picture text -----**<br> 4 of 5 **www.diodes.com** 2DB1689 Document number: DS31639 Rev. 3 - 4 May 2021 © Diodes Incorporated **2DB1689 IMPORTANT NOTICE** 1. DIODES INCORPORATED AND ITS SUBSIDIARIES (“DIODES”) MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON-INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 2. The Information contained herein is for informational purpose only and is provided only to illustrate the operation of Diodes products described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any product described herein. This document is intended for skilled and technically trained engineering customers and users who design with Diodes products. Diodes products may be used to facilitate safety-related applications; however, in all instances customers and users are responsible for (a) selecting the appropriate Diodes products for their applications, (b) evaluating the suitability of the Diodes products for their intended applications, (c) ensuring their applications, which incorporate Diodes products, comply the applicable legal and regulatory requirements as well as safety and functional-safety related standards, and (d) ensuring they design with appropriate safeguards (including testing, validation, quality control techniques, redundancy, malfunction prevention, and appropriate treatment for aging degradation) to minimize the risks associated with their applications. 3. Diodes assumes no liability for any application-related information, support, assistance or feedback that may be provided by Diodes from time to time. Any customer or user of this document or products described herein will assume all risks and liabilities associated with such use, and will hold Diodes and all companies whose products are represented herein or on Diodes’ websites, harmless against all damages and liabilities. 4. Products described herein may be covered by one or more United States, international or foreign patents and pending patent applications. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks & and trademark applications. Diodes does not convey any license under any of its intellectual property rights or the rights of any third parties (including third parties whose products and services may be described in this document or on Diodes’ website) under this document. 5. Diodes products are provided subject to Diodes’ Standard Terms and Conditions of Sale (https://www.diodes.com/about/company/terms-and-conditions/terms-and-conditions-of-sales/) or other applicable terms. This document does not alter or expand the applicable warranties provided by Diodes. Diodes does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. 6. Diodes products and technology may not be used for or incorporated into any products or systems whose manufacture, use or sale is prohibited under any applicable laws and regulations. Should customers or users use Diodes products in contravention of any applicable laws or regulations, or for any unintended or unauthorized application, customers and users will (a) be solely responsible for any damages, losses or penalties arising in connection therewith or as a result thereof, and (b) indemnify and hold Diodes and its representatives and agents harmless against any and all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim relating to any noncompliance with the applicable laws and regulations, as well as any unintended or unauthorized application. 7. While efforts have been made to ensure the information contained in this document is accurate, complete and current, it may contain technical inaccuracies, omissions and typographical errors. Diodes does not warrant that information contained in this document is error-free and Diodes is under no obligation to update or otherwise correct this information. Notwithstanding the foregoing, Diodes reserves the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes. 8. Any unauthorized copying, modification, distribution, transmission, display or other use of this document (or any portion hereof) is prohibited. Diodes assumes no responsibility for any losses incurred by the customers or users or any third parties arising from any such unauthorized use. Copyright © 2021 Diodes Incorporated **www.diodes.com** OS ~~gE~~ 2DB1689 5 of 5 May 2021 Document number: DS31639 Rev. 3 - 4 **www.diodes.com** © Diodes Incorporated
Updated at June 6, 2026
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