2DB1188R-13

**2DB1188P/Q/R 32V PNP MEDIUM POWER TRANSISTOR IN SOT89** 

## **Features** 

## **Mechanical Data** 

- BVCEO > -32V 

- IC = -2A High Continuous Current 

- Low Saturation Voltage VCE(sat) < -800mV @ -2A 

- Complementary NPN Type: 2DD1766 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities),** 

   - Package: SOT89 

   - Package Material:  Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 

   - Moisture Sensitivity: Level 1 per J-STD-020 

   - Terminals: Finish - Matte Tin Plated Leads, Solderable per MIL-STD-202, Method 208 

   - Weight: 0.052 grams (Approximate) 

- **please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/** 

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SOT89<br>C<br>E<br>B C C<br>B<br>E<br>**----- End of picture text -----**<br>


Top View 

Device Symbol Pin Out – Top View 

## **Ordering Information** (Note 4) 

|**Ordering Informationg Information Information**(Note 4)|**Ordering Informationg Information Information**(Note 4)|**Ordering Informationg Information Information**(Note 4)|**Ordering Informationg Information Information**(Note 4)|**Ordering Informationg Information Information**(Note 4)|**Ordering Informationg Information Information**(Note 4)|**Ordering Informationg Information Information**(Note 4)|
|---|---|---|---|---|---|---|
||||||||
|**Part Number**|**Status**|**Compliance**|**Marking Code**|**Reel Size(inches)**|**Tape Width(mm)**|**Quantity per Reel**|
|2DB1188P-13|Obsolete|Standard|P23P|13|12|2,500|
|2DB1188Q-13|Active|Standard|P23Q|13|12|2,500|
|2DB1188Q-13R|Active|Standard|P23Q|13|12|4,000|
|2DB1188R-13|Active|Standard|P23R|13|12|2,500|



- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 

   2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

   3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

   4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

## **Marking Information** 

P23x = Product Type Marking Code Where    P23P = 2DB1188P P23Q = 2DB1188Q P23R = 2DB1188R = Manufacturers’ Code Marking YWW = Date Code Marking Y or Y= Last Digit of Year (ex: 1 = 2021) WW = Week Code (01 to 53) - 

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2DB1188P/Q/R Document number: DS31144 Rev. 9 - 2 

February 2022 © Diodes Incorporated 

**2DB1188P/Q/R** 

## **Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Collector-Base Voltage|VCBO|-40|V|
|Collector-Emitter Voltage|VCEO|-32|V|
|Emitter-Base Voltage|VEBO|-6|V|
|Continuous Collector Current|IC|-2|A|
|Peak Pulse Collector Current|ICM|-3|A|
|Base Current|IB|-500|mA|



## **Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Thermal Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Power Dissipation(Note 5)|PD|1|W|
|Thermal Resistance,Junction to Ambient(Note 5)|RθJA|125|°C/W|
|Thermal Resistance,Junction to Leads(Note 6)|RθJL|19|°C/W|
|Operatingand Storage Temperature Range|TJ,TSTG|-55 to +150|°C|



Notes: 5. For a device surface mounted on 15mm x 15mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 

6. Thermal resistance from junction to solder-point (on the exposed collector pad). 

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2DB1188P/Q/R Document number: DS31144 Rev. 9 - 2 

February 2022 © Diodes Incorporated 

**2DB1188P/Q/R** 

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DIODES<br>**----- End of picture text -----**<br>


## **Thermal Characteristics and Derating Information** 

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VCE(sat) 1.0 15x15mm 1oz<br>Limited<br>1<br>0.8<br>~ ee) ee,See,<br>DC<br>1s 0.6<br>PINE7 100ms S A . Ge H‘Ga aaNeeeeNN,<br>ie NI N<br>100 m 10ms 0.4<br>1ms<br>15x15mm 1oz<br>Single Pulse 100µs 0.2<br>T =25°C<br>amb<br>10 m i HEreai| LETTE Ey|t 0.0 Pt; | ttt ING N N<br>100m 1 10 0 20 40 60 80 100 120 140 160<br>-VCE  Collector-Emitter Voltage (V)  Temperature (°C)<br>  Collector Current (A)<br>C<br>-I<br> Max Power Dissipation (W)<br>**----- End of picture text -----**<br>


## **Safe Operating Area** 

## **Derating Curve** 

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100<br>120 15x15mm 1oz 15x15mm 1oz<br>T =25°C<br>amb Single Pulse<br>100 [ T =25°C<br>amb<br>80 HN297 vy { COS CO I -Con-C] Il<br>D=0.5 10<br>TT A at<br>60 Nr CESS<br>40 D=0.2 LN eee HH | TIN Corr Co CTSyyCOC<br>Single Pulse<br>20 all D=0.05 | 1 FF HTT<br>D=0.1<br>0 ectUi Ll St ScSainisiny Sot Sa<br>100µ 1m 10m 100m 1 10 100 1k 100µ 1m 10m 100m 1 10 100 1k<br>Pulse Width (s) Pulse Width (s)<br> Maximum Power (W)<br>Thermal Resistance (°C/W)<br>**----- End of picture text -----**<br>


## **Transient Thermal Impedance** 

## **Pulse Power Dissipation** 

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140.0 3<br>T =25 ° C<br>amb 2oz copper<br>120.0 a2 2 o><br>100.0<br>1oz copper<br>80.0<br>ERNEEEEEES 1 AA<br>1oz copper<br>60.0<br>po AEE PL EEE LE Ey<br>T =25°C<br>40.0 |rRe| | | [| | [| ft 2oz copper | 0 PL amb LT LLL LI<br>0 500 1000 1500 2000 2500 0 500 1000 1500 2000 2500<br>Copper Area (sqmm) Copper Area (sqmm)<br>R  vs Area P  vs Area<br>TH D<br> Maximum Power (W)<br>Thermal Resistance (°C/W)<br>**----- End of picture text -----**<br>


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2DB1188P/Q/R Document number: DS31144 Rev. 9 - 2 

February 2022 © Diodes Incorporated 

**2DB1188P/Q/R** 

**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|---|
|||||||||
|**Characteristic**<br>~~QQ~~||**Symbol**<br>~~QQ~~|**Min**<br>~~QQ~~|**Typ**<br>~~QQ~~<br>~~GOD~~|**Max**<br>~~QQ~~<br>~~GO~~|**Unit**<br>~~QQ~~|**Test Condition**<br>~~QQ~~|
|**OFF CHARACTERISTICS(Note 7)**<br>~~GODGO~~<br>~~se~~||||||||
|Collector-Base Breakdown Voltage<br>~~se~~||BVCBO<br>~~se~~|-40<br>~~se~~|<br>~~se~~|<br>~~se~~|V<br>I<br>~~se~~|IC= -100µA<br>~~se~~|
|Collector-Emitter Breakdown Voltage<br>~~FY~~||BVCEO<br>~~FY~~|-32<br>~~FY~~|<br>~~FY~~|<br>~~FY~~|V<br>I<br>~~FY~~|IC= -10mA<br>~~FY~~|
|Emitter-Base Breakdown Voltage<br>~~FY~~||BVEBO<br>~~FY~~|-6<br>~~FY~~|<br>~~FY~~|<br>~~FY~~|V<br>I<br>~~FY~~|IE= -100µA<br>~~FY~~<br>~~H+2HAS~~|
|Collector Cutoff Current<br>~~YH~~||ICBO<br>~~YH~~|<br>~~YH~~|<br>~~YH~~|-100<br>~~YH~~|nA<br>V<br>~~YH~~|VCB= -20V<br>~~YH~~<br>~~H+2HAS~~|
|Emitter Cutoff Current<br>~~YH~~||IEBO<br>~~YH~~|<br>~~YH~~|<br>~~YH~~|-100<br>~~YH~~|nA<br>V<br>~~YH~~|VEB= - 5V<br>~~YH~~<br>~~H+2HAS~~|
|**ON CHARACTERISTICS(Note 7)**<br>~~H+2HAS~~<br>~~——————————~~||||||||
|Collector-Emitter Saturation Voltage<br>~~————————~~||VCE(sat)<br>~~——————~~|<br>~~——————~~|-0.35<br>~~——————~~|-0.8<br>~~——————~~|V<br>I<br>~~——————~~|IC= -2A,IB= -0.2A<br>~~————————~~|
|DC Current Gain<br>~~————————~~<br>~~a eee~~|2DB1188P<br>~~——————~~<br>~~eee~~|hFE<br>~~——————~~<br>~~eee~~|82<br>~~——————~~<br>~~eee~~|<br>~~——————~~<br>~~eee~~|180<br>~~——————~~<br>~~eee~~|<br>V<br>~~——————~~<br>~~eee~~|VCE= -3V, IC= -0.5A<br>~~————————~~<br>~~eee~~|
||2DB1188Q<br>~~eee~~||120<br>~~eee~~||270<br>~~eee~~|||
||2DB1188R<br>~~eee~~||180<br>~~eee~~||390<br>~~eee~~|||
|**SMALL SIGNAL CHARACTERISTICS**<br>~~eseses~~||||||||
|Current Gain-Bandwidth Product<br>~~ee~~||fT<br>~~ee~~<br>~~es~~|<br>~~ee~~<br>~~es~~<br>~~OD~~|120<br>~~ee~~<br>~~es~~<br>~~OD~~|<br>~~ee~~<br>~~QAO~~|MHz<br>V<br>f =<br>~~ee~~<br>~~QAOGO~~|VCE= -5V, IC= -0.1A,<br>f =30MHz<br>~~ee~~<br>~~GO~~|
|Output Capacitance<br>~~DD~~||Cobo<br>~~es ~~<br>~~DD~~|<br> ~~es ~~<br>~~DD~~<br>~~OD~~|20<br> ~~es~~<br>~~DD~~<br>~~OD~~|<br>~~DD~~<br>~~QAO~~|pF<br>V<br>~~DD~~<br>~~QAOGO~~|VCB= -10V,f = 1MHz<br>~~DD~~<br>~~GO~~|



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1.4 350<br>1.2 IB = -10mA 300 V     =  CE -3V<br>T   = 150°CA<br>1.0 eS I B = -8mA 250 Ce<br>Cea T   = 85°CA HT<br>0.8 I B  = -6mA 200<br>FO T   = 25°C ea A Ha<br>0.6 MoO 150<br>IB = -4mA<br>0.4 100<br>Fee) CN T   = -55°CA<br>IB = -2mA<br>0.2 RES 50 SN<br>0 PO 0<br>0 1 2 3 4 5 0.001 0.01 0.1 1 10<br>-VCE, COLLECTOR EMITTER VOLTAGE (V) -I  , COLLECTOR CURRENT (A)C<br>Figure 1.  Typical Collector Current  Figure 2.  Typical DC Current Gain<br>vs. Collector-Emitter Voltage vs. Collector Current (2DB1188Q)<br>, DC CURRENT GAIN<br>FE<br>h<br>C<br>, COLLECTOR CURRENT (A)<br>-I<br>**----- End of picture text -----**<br>


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2DB1188P/Q/R Document number: DS31144 Rev. 9 - 2 

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**2DB1188P/Q/R** 

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0.6<br>1.2<br>V     = -3V CE<br>0.5 al I   /I   = 10 C    B HA eA Cy<br>1.0<br>| Tw TTITTT<br>0.4<br>0.8<br>CMCC) | =  ERCTAECM<br>T   = -55°CA<br>0.3 BU 0 0 0 | eZ7<br>0.6<br>nTOca<br>T   = 150°CA T   = 25°CA<br>0.2 ci AN<br>0.4<br>| a T   = 85°CA<br>T   = 85°CA T   = 25°CA<br>0.1 a ee laa ertTTT<br>f T   = -55°CA 0.2 T   = 150°C A LIT TTT TA<br>ST SL a a<br>0 Ail AtiROA<br>SST 0 ALA<br>0.0001 0.001 0.01 0.1 1 10<br>0.0001 0.001 0.01 0.1 1 10<br>-I  , COLLECTOR CURRENT (A)C -I  , COLLECTOR CURRENT (A)C<br>Figure 3. Typical Collector-Emitter Saturation Voltage<br>Figure 4.  Typical Base-Emitter Turn-On Voltage<br>vs. Collector Current<br>vs. Collector Current<br>1.2 Th on °UMW Tl<br>1.0<br>AR A Ze eel a<br>0.8 aemee A<br>TN CTATT 8 sll<br>T   = -55A ° C<br>0.6 Smee eco UIE TIMING TTT<br>Lue TOM CoAT TUN, \<br>T    A = 25°C<br>0.4 so T   = 85°C A an at CT TTI TT<br>Pai at ae UL E on nit!<br>wae<br>0.2 T   = 150 A °C I   /I   = 10C    B 3, P<br>en St [a] TM ATMTMT 3 CTH FTN TSS TT<br>0<br>0.0001 0.001 0.01 0.1 [CT] 1 10 0.01 0.1 1 10 100<br>FC -I  , COLLECTOR CURRENT (A)C [COTTA] a stat, -Vp, REVERSE VOLTAGE (V)<br>Figure 5.  Typical Base-Emitter Saturation Voltage Figure 6. Typical Output Capacitance Characteristics<br>vs. Collector Current<br>, COLLECTOR-EMITTER<br>CE(sat) SATURATION VOLTAGE (V)<br>-V<br>, BASE-EMITTER TURN-ON VOLTAGE (V)<br>BE(on)<br>-V<br>VOLTAGE (V)<br>, BASE-EMITTER SATURATION<br>BE(sat)<br>-V<br>**----- End of picture text -----**<br>


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**2DB1188P/Q/R** 

## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

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SOT89<br>**----- End of picture text -----**<br>


|||||||||D1|D1||||R0.200|R0.200|R0.200|||||||||||||||c|c||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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||||||||||||||||||||||||||||||||||||||||||
||||||||||||||||||||||||||||||||||||||**SOT89**||||
|E||||||||||||||||||||||||||||||H|||||||**Dim**<br>**Min**<br>**Max**<br>**A**<br>1.40<br>1.60|||**Typ**<br>1.50|
||||||||||||||||||||||||||||||||||||||**B**<br>0.50|0.62||0.56|
||||||||||||||||||||||||||||||||||||||**B1**<br>0.42|0.54||0.48|
||||||||||||||||||||||||||||||||||||||**c**<br>0.35|0.43||0.38|
|||B1||||||||||B|||||L||||||||||||||||||||**D**<br>4.404.<br>**D1**<br>1.62|4.60<br>1.83||4.50<br>1.733|
||||||||||||e||||||||||||||||||||||||||**D2**<br>1.61|1.81||1.71|
|||||||TOP VIEW||TOP VIEW||||||||||||||||||D2|||||||||||**E**<br>2.40<br>**E2**<br>2.05|2.60<br>2.35||2.50<br>2.20|
||||||8° (4X)|||||||||||||H1|||||||||||||E2||||||**e**<br>-<br>**H**<br>3.954.2<br>**H1**<br>2.632.<br>**L**<br>0.901.2|-<br>4.25<br>2.93<br>1.20||1.50<br>4.10<br>2.78<br>1.05|
|||||||||||||||||A|||||||||||||||||||||**L1**<br>0.327|270.527|27|270.427|
||||||||||||||||||||||||||||||||||||||**z**<br>0.20|0.40||0.30|
||||||||||||||||||||||||||||||||||||L1||**All Dimensions in mm**||**All Dimensions in mm**||
|||||||||D|||||||||||||||||z||||||||||||||||
|||||||||||||||||||||||||BOTTOM VIEW|||||||||||||||||



## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

**SOT89** 

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X2<br>Value<br>Dimensions<br>(in mm)<br>C  1.500<br>Y3<br>Y1 G  0.244<br>X  0.580<br>Y4 X G X1  0.760<br>X2  1.933<br>Y  1.730<br>Y1  3.030<br>Y Y2  1.500<br>Y2<br>Y3  0.770<br>a h —— Y4  4.530<br>X1 i<br>C<br>**----- End of picture text -----**<br>


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**2DB1188P/Q/R** 

## **IMPORTANT NOTICE** 

1. DIODES INCORPORATED AND ITS SUBSIDIARIES (“DIODES”) MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON-INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

2. The Information contained herein is for informational purpose only and is provided only to illustrate the operation of Diodes products described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any product described herein. This document is intended for skilled and technically trained engineering customers and users who design with Diodes products. Diodes products may be used to facilitate safety-related applications; however, in all instances customers and users are responsible for (a) selecting the appropriate Diodes products for their applications, (b) evaluating the suitability of the Diodes products for their intended applications, (c) ensuring their applications, which incorporate Diodes products, comply the applicable legal and regulatory requirements as well as safety and functional-safety related standards, and (d) ensuring they design with appropriate safeguards (including testing, validation, quality control techniques, redundancy, malfunction prevention, and appropriate treatment for aging degradation) to minimize the risks associated with their applications. 

3. Diodes assumes no liability for any application-related information, support, assistance or feedback that may be provided by Diodes from time to time. Any customer or user of this document or products described herein will assume all risks and liabilities associated with such use, and will hold Diodes and all companies whose products are represented herein or on Diodes’ websites, harmless against all damages and liabilities. 

4. Products described herein may be covered by one or more United States, international or foreign patents and pending patent applications. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks and trademark applications. Diodes does not convey any license under any of its intellectual property rights or the rights of any third parties (including third parties whose products and services may be described in this document or on Diodes’ website) under this document. 

5. Diodes       products       are        provided       subject        to       Diodes’        Standard       Terms       and       Conditions       of        Sale (https://www.diodes.com/about/company/terms-and-conditions/terms-and-conditions-of-sales/) or other applicable terms. This document does not alter or expand the applicable warranties provided by Diodes. Diodes does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. 

6. Diodes products and technology may not be used for or incorporated into any products or systems whose manufacture, use or sale is prohibited under any applicable laws and regulations. Should customers or users use Diodes products in contravention of any applicable laws or regulations, or for any unintended or unauthorized application, customers and users will (a) be solely responsible for any damages, losses or penalties arising in connection therewith or as a result thereof, and (b) indemnify and hold Diodes and its representatives and agents harmless against any and all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim relating to any noncompliance with the applicable laws and regulations, as well as any unintended or unauthorized application. 

7. While efforts have been made to ensure the information contained in this document is accurate, complete and current, it may contain technical inaccuracies, omissions and typographical errors. Diodes does not warrant that information contained in this document is error-free and Diodes is under no obligation to update or otherwise correct this information. Notwithstanding the foregoing, Diodes reserves the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes. 

8. Any unauthorized copying, modification, distribution, transmission, display or other use of this document (or any portion hereof) is prohibited. Diodes assumes no responsibility for any losses incurred by the customers or users or any third parties arising from any such unauthorized use. 

Copyright © 2022 Diodes Incorporated 

**www.diodes.com** 

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2DB1188P/Q/R Document number: DS31144 Rev. 9 - 2 

February 2022 © Diodes Incorporated