# Bipolar (BJT) Single Transistor, PNP, 32 V, 1 A, 2 W, SOT-89, Surface Mount

![Product image](https://novapart.co/image/farnell:3943051/)

**URL**: https://novapart.co/products/2DB1132R-13/bipolar-bjt-single-transistor-pnp-32-v-1-a-2-w-sot
**SKU**: 2DB1132R-13
**Manufacturer**: DIODES INC.
**Price**: €0.1190
**Stock**: 1000+
**Lead Time**: 78 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 2W |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | PNP |
| Transition Frequency | 190MHz |
| Transistor Case Style | SOT-89 |
| Dc Current Gain Hfe Min | 180hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 1A |
| Collector Emitter Voltage Max | 32V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3943051/)

## **2DB1132P/Q/R 32V PNP POWER SWITCHING TRANSISTOR IN SOT89** 

## **Features** 

- BVCEO > -32V 

- IC = -1A High Continuous Collector Current 

- Complementary NPN Type: 2DD1664 

- Ideally Suited for Automated Assembly Processes 

- Ideal for Medium Power Switching or Amplification Applications 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

## **Mechanical Data** 

      - Case: SOT89 

      - Case Material: Molded Plastic. “Green” Molding Compound. UL Flammability Rating 94V-0 

      - Moisture Sensitivity: Level 1 per J-STD-020 

      - Terminals: Finish - Matte Tin Plated Leads, Solderable per MIL-STD-202, Method 208 

      - Weight: 0.055 grams (Approximate) 

- **For automotive applications requiring specific change control (i.e.: parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please refer to the related automotive grade (Q-suffix) part. A listing can be found at** 

   - 

   - **https://www.diodes.com/products/automotive/automotive products/.** 

- **This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability.** 

**https://www.diodes.com/quality/product-definitions/** 

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SOT89<br>Top View<br>**----- End of picture text -----**<br>


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C<br>E<br>B C C<br>B<br>E<br>Pin Out<br>Device Symbol  Top View<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 4) 

|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|
|---|---|---|---|---|---|
|||||||
|**Part Number**|**Status**|**Marking Code**|**Reel Size(inches)**|**Tape Width(mm)**|**Quantity per Reel**|
|2DB1132P-13|Obsolete|P13P|13|12|2,500|
|2DB1132Q-13|Obsolete|P13Q|13|12|2,500|
|2DB1132R-13|Active|P13R|13|12|2,500|
|2DB1132R-13R|Active|P13R|13|12|4,000|



Notes:        1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 

2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

## **Marking Information** 

(Top View) (Y P13x = Product Type Marking Code: Dit = Manufacturer’s Marking Where P13P = 2DB1132P YWW P13Q = 2DB1132Q P13R = 2DB1132R P13x YWW = Date Code Marking Y = Last Digit of Year (ex: 1 = 2021) WW = Week Code (01 to 52) 

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2DB1132P/Q/R Document number: DS31142  Rev: 8 - 2 

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**2DB1132P/Q/R** 

## **Absolute Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Absolute Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)pecified.)ecified.))|||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Collector-Base Voltage|VCBO|-40|V|
|Collector-Emitter Voltage|VCEO|-32|V|
|Emitter-Base Voltage|VEBO|-5|V|
|Continuous Collector Current|IC|-1|A|
|Peak Pulse Current|ICM|-2|A|



## **Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Thermal Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|||
|---|---|---|---|---|
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Power Dissipation|(Note 5)|PD|1|W|
||(Note 6)||1.5||
||(Note 7)||2||
|Thermal Resistance, Junction to Ambient Air|(Note 5)|RθJA|125|°C/W|
||(Note 6)||83||
||(Note 7)||60||
|Thermal Resistance, Junction to Case|(Note 5)|RθJC|18|C/W|
|Thermal Resistance, Junction to Lead|(Note 8)|RθJL|22|°C/W|
|Operatingand Storage Temperature Range||TJ,TSTG|-55 to +150|°C|



## **ESD Ratings** (Note 9) 

|**ESD Ratingsgss **(Note 9)|**ESD Ratingsgss **(Note 9)|**ESD Ratingsgss **(Note 9)|**ESD Ratingsgss **(Note 9)|**ESD Ratingsgss **(Note 9)|
|---|---|---|---|---|
||||||
|**Characteristic**|**Symbol**|**Value**|**Unit**|**JEDEC Class**|
|Electrostatic Discharge - Human BodyModel|ESD HBM|4,000|V|3A|
|Electrostatic Discharge - Machine Model|ESD MM|400|V|C|



Notes: 5. For a device mounted with the exposed collector pad on 15mm x 15mm 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under still air conditions whilst operating in a steady-state. 

6. Same as note (5), except the device is mounted on 25mm x 25mm 1oz copper. 

7. Same as note (5), except the device is mounted on 50mm x 50mm 1oz copper. 

8. Thermal resistance from junction to solder-point (on the exposed collector pad). 

9. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 

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**2DB1132P/Q/R** 

## **Thermal Characteristics and Derating Information** 

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**----- Start of picture text -----**<br>
140.0 3<br>T =25 O C<br>120.0 A 2oz copper<br>pe a<br>2<br>Oe ee<br>100.0<br>1oz copper<br>a \N ee fon<br>80.0<br>1<br>ee 1oz copper e e<br>po NRF Ae d<br>60.0<br>HOSS Est<br>T =25OC<br>40.0 FTTrTrTrytEERE FER} 2oz copper 0 LETT A<br>0 500 1000 1500 2000 2500 0 500 1000 1500 2000 2500<br>Copper Area (sqmm) Copper Area (sqmm)<br>1.0 a 120 Tee<br>ee CCT<br>0.8 eeee 100 ETELRcAR A<br>80<br>0.6 PN OT D=0.5 AA<br>Po KR 60 eterHR0015" AAU<br>0.4 rN te I AA TTT TT<br>pp 40 i D=0.2 EN A Single Pulse<br>0.2 pf | {| | iNV 20 MCEHTT D=0.05<br>re se D=0.1<br>0.0 a ee Ne 0 amseer RTHRA<br>0 25 50 75 100 125 150 100μ100 1m 10m 100m 1 10 100 1k<br>O Pulse Width (s)<br> Temperature ( C)<br>Transient Thermal Impedance<br>Derating Curve<br>100<br>a Single Pulse. TA=25 O C HI<br>RO) OE |<br>aSSR<br>10 SAITAMAAI UI<br>PCI TT TET TINT TTT TTT TTT<br>PT PI PITT TT PT<br>CAA TTCSST<br>1 SILOT AI<br>100μ100 1m 10m 100m 1 10 100 1k<br>Pulse Width (s)<br>Pulse Power Dissipation<br>C/W)<br>O<br> Max Power Dissipation (W) Thermal Resistance (<br> Max Power Dissipation (W)<br> Maximum Power (W)<br>Thermal Resistance (<br>C/W)<br>O<br>**----- End of picture text -----**<br>


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2DB1132P/Q/R Document number: DS31142  Rev: 8 - 2 

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**2DB1132P/Q/R** 

**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)pecified.)ecified.))|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)pecified.)ecified.))|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)pecified.)ecified.))|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)pecified.)ecified.))|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)pecified.)ecified.))|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)pecified.)ecified.))|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)pecified.)ecified.))|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**<br>~~GD~~||**Symbol**<br>~~GD~~|**Min**<br>~~GD~~<br>~~QQ~~<br>~~GG~~|**Typ**<br>~~GD~~<br>~~QQ~~<br>~~GG~~|**Max**<br>**Unit**<br>~~GD~~<br>~~QQGC~~<br>~~GG~~|**Unit**<br>**Test Condition**<br>~~GD~~<br>~~GC~~<br>~~OO~~|
|Collector-Base Breakdown Voltage<br>~~eG~~||BVCBO<br>~~eG~~|-40<br>~~QQ~~<br>~~eG~~<br>~~GG~~|—<br>~~QQ~~<br>~~eG~~<br>~~GG~~|—<br>V<br>~~QQ GC~~<br>~~eG~~<br>~~GG~~|V<br>IC= -50µA<br>~~GC~~<br>~~eG~~<br>~~OO~~|
|Collector-Emitter Breakdown Voltage(Note 10)<br>~~GG~~||BVCEO<br>~~GG~~|-32<br>~~GG~~<br>~~GG~~|—<br>~~GG~~<br>~~GG~~|—<br>V<br>~~GG~~<br>~~GG~~|V<br>IC= -1mA<br>~~OO~~<br>~~GG~~|
|Emitter-Base Breakdown Voltage<br>~~Ge~~||BVEBO<br>~~Ge~~|-5<br>~~Ge~~|—<br>~~Ge~~|—<br>V<br>~~Ge~~|V<br>IE= -50µA<br>~~Ge~~|
|Collector Cut-Off Current<br>~~GG~~<br>~~|~~||ICBO<br>~~GG~~|—<br>~~GG~~|—<br>~~GG~~|-0.5<br>µA<br>~~GG~~<br>~~GC~~|A<br>VCB= -20V<br>~~GG~~|
|Emitter Cut-Off Current<br>~~GG~~<br>~~|~~||IEBO<br>~~GG~~<br>~~|~~|—<br>~~GG~~<br>~~|~~|—<br>~~GG~~|-0.5<br>µA<br>~~GG~~<br>~~GC~~<br>~~|~~|A<br>VEB= -4V<br>~~GG~~|
|Static Forward Current Transfer<br>Ratio (Note 10)<br>~~ee~~|2DB1132P<br>2DB1132Q<br>2DB1132R<br>~~|~~<br>~~ee~~<br>~~|~~|hFE<br>~~|~~<br>~~ee~~<br>~~|~~|82<br>~~|~~<br>~~ee~~|—<br>~~ee~~|180<br>—<br>270<br>390<br>~~GC~~<br>~~|~~<br>~~ee~~<br>~~|~~|—<br>IC= -100mA, VCE= -3V|
||||120<br>~~|~~<br>~~ee~~<br>~~|~~||||
||||180<br>~~ee~~<br>~~|~~||||
|Collector-Emitter Saturation Voltage(Note 10)<br>~~|~~<br>~~GG~~||VCE(sat)<br>~~|~~<br>~~GG~~|—<br>~~|~~<br>~~GG~~|-125<br>~~GG~~|-500<br>mV<br>~~|~~<br>~~GG~~|mV<br>IC=-500mA,IB= -50mA<br>~~GG~~|
|Transition Frequency||fT|—|190|—<br>MHz|MHz<br>IE= -50mA, VCE= -5V,<br>f =30MHz|
|Output Capacitance<br>~~fd~~||Cobo<br>~~fd~~|—<br>~~fd~~|12<br>~~fd~~|30<br>pF<br>~~fd~~|F<br>IE= 0A,VCB= -10V,f = 1MHz<br>~~fd~~|



Note: 10. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%. 

## **Typical Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

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**----- Start of picture text -----**<br>
1.6<br>V     = -3VCE<br>500<br>1.4<br>T    = 150°CA<br>_  He 1.2 e 400 a Sine<br>< Ao z T   = 85°CA M EAT<br>pi53 1.0 leeOL r p r a os6 300 LCa TTUIONAVIENIAI ETT<br>2 0.8 Zante i T   = 25°C T A T \\<br>Ae ee ee A a ee | |<br>0.6 200<br>Seer et) 8 AI CI<br>AW 0.4 LEEPE T    = -55°CA R<br>'% 0.2 Weer 100 er 000 ies<br>0 neeeeee 0 TTTINTi<br>° - VoE; COLLECTOR EMITTER VOLTAGE (V) ° 0.001 - lg, 0.01  COLLECTOR 0.1  CURRENT 1  (A) 10<br>Fig .  1  Typical Collector Current Fig .  2  Typical DC Current Gain<br>vs. Collector - Emitter Voltage vs . Collector Current (2DB1132R)<br>S T a “CTT TTT TTT TTT TM<br>05 I    /I   = 10C     B | w o t IE TNT TIM ATI TTT<br>! EE YEAI<br>os Brrr 000 4<br>T   = -55°CA<br>STATIN i 0.8 pas LY We<br>| e G<br>03 AI Tai} 0.6 7D ay Eepe vi<br>T   = 25°CA<br>02 C E T   = 150°CA T ER A<br>i n ate T   = 85°C  eae A<br>0 . 1 TH Tih T   = 85°CA fo T   = -55°C y A T   = 25°CA _ T   = 150°CA weerm AIM TIN V     = -3VCE | TEI<br>CNT yy, -TA L<br>uaa T NC<br>eT ol [LIM ETI FUT FUT TT<br>0.0001 0 . 001 0.01 0.1 1 10 0 . 0001 0 . 001 0 . 04 0 . 1 4 10<br>-I¢, COLLECTOR CURRENT (A) - I¢, COLLECTOR CURRENT (A)<br>Fig .  3  Typical Collector - Emitter Saturation Voltage Fig. 4  Typical Base -E mitter Tur n- On Voltage<br>N VOLTAGE (V)<br>O<br>, COLLECTOR-EMITTER<br>CE(sat) SATURATION VOLTAGE (V)<br>-V<br>, BASE-EMITTER TURN-<br>BE(on)<br>V-<br>**----- End of picture text -----**<br>


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**2DB1132P/Q/R** 

**Typical Electrical Characteristics** (continued) (@TA = +25°C, unless otherwise specified.) 

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**----- Start of picture text -----**<br>
UIE TN TIM ATE ZT<br>e a<br>a TTI<br>osa<br>T   = -55°CA<br>vo or<br> Lett ACH<br>T   = 25°CA<br>naa T   = 85°CA m<br> eet WM TM TTT il<br>se TTT TIME TTI<br>T   = 150°CA<br>I   /I   = 10C    B<br>Et tt<br>0 . 0001 0 . 001 0 . 01 0 . 1 1 10<br>- I¢, COLLECTOR CURRENT (A)<br>Fig. 5  Typical Base -E mitter Saturation Voltage<br>(V)<br>, BASE EMITTER SATURATION VOLTAGE<br>BE(sat)<br>-V<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
40 lll<br>S 30 alil r= aM<br>é INi<br>9 \<br>20<br>g ii<br>: \|<br>: NI<br>10 hi<br>3 Die<br>0<br>SC CUIWIE LEVLIE LILI<br>. .<br>Vp REVERSE VOLTAGE (V)<br>Fig. 6  Typical Output Capacitance Characteristics<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
250<br>200<br>150<br>100<br>50 Vf = 30MHzCE = -5V<br>° 20 40 60 80 100<br>-IE, EMITTER CURRENT (mA)<br>FigFig .  78 Typical Gain-Bandwidth Product vs. Emitter Current<br>**----- End of picture text -----**<br>


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2DB1132P/Q/R Document number: DS31142  Rev: 8 - 2 

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**2DB1132P/Q/R** 

## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

**==> picture [431 x 275] intentionally omitted <==**

**----- Start of picture text -----**<br>
SOT89<br>D1<br>c<br>SOT89<br>- qi<br>H Dim  Min  Max  Typ<br>E A  1.40 1.60 1.50<br>B  0.50 0.62  0.56<br>B1  0.42  0.54  0.48<br>| - —tf<br>c 0.35 0.43 0.38<br>B1 L D  4.40 4.60 4.50<br>B<br>D1  1.62  1.83 1.733<br>mal e S555 D2  1.61  1.81  1.71<br>D2 E  2.40 2.60 2.50<br>TOP VIEW<br>E2  2.05 2.35 2.20<br>e -  -  1.50<br>H  3.95 4.25 4.10<br>H1  2.63 2.93 2.78<br>H1<br>E2 L  0.90 1.20 1.05<br>_ | 55S<br>A L1  0.327  0.527  0.427<br>z  0.20 0.40 0.30<br>L1 All Dimensions in mm<br>[Oeen D : z i ; BEE<br>BOTTOM VIEW<br>8° (<br>4X)<br>R0.200<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

## **SOT89** 

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**----- Start of picture text -----**<br>
_ X2<br>Value<br>Dimensions<br>Y3 (in mm)<br>Y1 C  1.500<br>G  0.244<br>Y4 X G X  0.580<br>X1  0.760<br>X2  1.933<br>7 -— —+ Y  1.730<br>Y Y2 Y1  3.030<br>Y2  1.500<br>“a l lThtae | ==—— Y3  0.770<br>Y4  4.530<br>X1<br>ph C a<br>**----- End of picture text -----**<br>


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**2DB1132P/Q/R** 

## **IMPORTANT NOTICE** 

1. DIODES INCORPORATED AND ITS SUBSIDIARIES (“DIODES”) MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON-INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

2. The Information contained herein is for informational purpose only and is provided only to illustrate the operation of Diodes products described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any product described herein. This document is intended for skilled and technically trained engineering customers and users who design with Diodes products. Diodes products may be used to facilitate safety-related applications; however, in all instances customers and users are responsible for (a) selecting the appropriate Diodes products for their applications, (b) evaluating the suitability of the Diodes products for their intended applications, (c) ensuring their applications, which incorporate Diodes products, comply the applicable legal and regulatory requirements as well as safety and functionalsafety related standards, and (d) ensuring they design with appropriate safeguards (including testing, validation, quality control techniques, redundancy, malfunction prevention, and appropriate treatment for aging degradation) to minimize the risks associated with their applications. 3. Diodes assumes no liability for any application-related information, support, assistance or feedback that may be provided by Diodes from time to time. Any customer or user of this document or products described herein will assume all risks and liabilities associated with such use, and will hold Diodes and all companies whose products are represented herein or on Diodes’ websites, harmless against all damages and liabilities. 4. Products described herein may be covered by one or more United States, international or foreign patents and pending patent applications. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks and trademark applications. Diodes does not convey any license under any of its intellectual property rights or the rights of any third parties (including third parties whose products and services may be described in this document or on Diodes’ website) under this document. 

5. Diodes        products       are        provided       subject        to       Diodes’        Standard       Terms       and       Conditions       of        Sale (https://www.diodes.com/about/company/terms-and-conditions/terms-and-conditions-of-sales/) or other applicable terms. This document does not alter or expand the applicable warranties provided by Diodes. Diodes does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. 

6. Diodes products and technology may not be used for or incorporated into any products or systems whose manufacture, use or sale is prohibited under any applicable laws and regulations. Should customers or users use Diodes products in contravention of any applicable laws or regulations, or for any unintended or unauthorized application, customers and users will (a) be solely responsible for any damages, losses or penalties arising in connection therewith or as a result thereof, and (b) indemnify and hold Diodes and its representatives and agents harmless against any and all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim relating to any noncompliance with the applicable laws and regulations, as well as any unintended or unauthorized application. 

7. While efforts have been made to ensure the information contained in this document is accurate, complete and current, it may contain technical inaccuracies, omissions and typographical errors. Diodes does not warrant that information contained in this document is error-free and Diodes is under no obligation to update or otherwise correct this information. Notwithstanding the foregoing, Diodes reserves the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes. 

8. Any unauthorized copying, modification, distribution, transmission, display or other use of this document (or any portion hereof) is prohibited. Diodes assumes no responsibility for any losses incurred by the customers or users or any third parties arising from any such unauthorized use. 

Copyright © 2021 Diodes Incorporated 

**www.diodes.com** 

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## Links

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- [Supplier page](https://es.farnell.com/diodes-inc/2db1132r-13/trans-pnp-32v-1a-150deg-c-2w/dp/3943051)
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