1SS400T5G
Small Signal Diode, Single, 100 V, 200 mA, 1.2 V, 4 ns, 500 mA
- Manufacturer: ONSEMI
- Product type: Small Signal Diodes
- Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:100V; Forward Current If(AV):200mA; Forward Voltage VF Max:1.2V; Reverse Recovery Time trr Max:4ns; Forward Surge Curre
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 2Pins
- Product Range: -
- Qualification: AEC-Q101
- Diode Mounting: Surface Mount
- Diode Case Style: SOD-523
- Diode Configuration: Single
- Forward Voltage Max: 1.2V
- Forward Surge Current: 500mA
- Reverse Recovery Time: 4ns
- Average Forward Current: 200mA
- Operating Temperature Max: 150°C
- Repetitive Peak Reverse Voltage: 100V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 0.056 € |
| Current stock | 1000+ |
| Lead time | 30 days |
**DATA SHEET www.onsemi.com** ## High-Speed Switching Diode 1SS400T1G, NSV1SS400T1G ## **Features** - High−Speed Switching Applications 1 2 CATHODE ANODE **==> picture [38 x 60] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>SOD−523<br>CASE 502<br>PLASTIC<br>**----- End of picture text -----**<br> - Lead Finish: 100% Matte Sn (Tin) - Qualified Maximum Reflow Temperature: 260° C - Extremely Small SOD−523 Package - NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable - These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant ## **MAXIMUM RATINGS** (TA = 25 ° C) |**MAXIMUM RATINGS**(TA= 25°C)|||| |---|---|---|---| |**Rating**|**Symbol**|**Max**|**Unit**| |Reverse Voltage|VR|100|V| |Forward Current|IF|200|mAdc| |Peak Forward Surge Current|IFM(surge)|500|mAdc| |**THERMAL CHARACTERISTICS**|||| |**Characteristic**|**Symbol**|**Max**|**Unit**| |Total Device Dissipation<br>FR−5 Board (Note 1) @TA= 25°C<br>Derate above 25°C|PD|200<br>1.57|mW<br>mW/°C| |Thermal Resistance, Junction-to-Ambient|R�JA|635|°C/W| |Junction and Storage Temperature Range|TJ, Tstg|−55 to<br>+150|°C| Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR−4 @ Minimum Pad. ## **ELECTRICAL CHARACTERISTICS** (TA = 25 ° C) |**Characteristic**|**Symbol**|**Min**|**Max**|**Unit**| |---|---|---|---|---| |**OFF CHARACTERISTICS**||||| |Reverse Voltage Leakage Current<br>(VR= 80 Vdc)|IR|−|0.1|�Adc| |Diode Capacitance<br>(VR= 0 V, f = 1.0 MHz)|CD|−|3.0|pF| |Forward Voltage<br>(IF= 100 mAdc)|VF|−|1.2|Vdc| |Reverse Recovery Time<br>(IF= IR= 10 mAdc)|trr|−|4.0|ns| ## **MARKING DIAGRAM** **==> picture [65 x 34] intentionally omitted <==** **----- Start of picture text -----**<br> A M �<br>�<br>1<br>**----- End of picture text -----**<br> A = Device Code M = Date Code* � = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ## **ORDERING INFORMATION** |**Device**|**Package**|**Shipping**†| |---|---|---| |1SS400T1G|SOD−523<br>(Pb−Free)|3000 / Tape & Reel| |1SS400T5G|SOD−523<br>(Pb−Free)|8000 / Tape & Reel| |NSV1SS400T1G|SOD−523<br>(Pb−Free)|3000 / Tape & Reel| |NSV1SS400T5G|SOD−523<br>(Pb−Free)|8000 / Tape & Reel| - †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: **1** © Semiconductor Components Industries, LLC, 2014 **December, 2021 − Rev. 10** **1SS400T1/D** **1SS400T1G, NSV1SS400T1G** **==> picture [484 x 130] intentionally omitted <==** **----- Start of picture text -----**<br> 820 �<br>IF<br>+10 V 2.0 k 0.1 �F tr t p t<br>100 �H IF 10% t rr t<br>0.1 �F<br>DUT 90%<br>50 � OUTPUT 50 � INPUT iR(REC) = 1.0 mA<br>IR<br>PULSE SAMPLING VR OUTPUT PULSE<br>GENERATOR OSCILLOSCOPE INPUT SIGNAL<br>(IF = IR = 10 mA; MEASURED<br>at iR(REC) = 1.0 mA)<br>**----- End of picture text -----**<br> **==> picture [286 x 30] intentionally omitted <==** **----- Start of picture text -----**<br> Notes: 1. A 2.0 k � variable resistor adjusted for a Forward Current (IF) of 10 mA.<br>Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.<br>Notes: 3. tp » trr<br>**----- End of picture text -----**<br> **Figure 1. Recovery Time Equivalent Test Circuit** **==> picture [486 x 170] intentionally omitted <==** **----- Start of picture text -----**<br> 100 10<br>TA = 150°C<br>TA = 85°C TA = -40°C 1.0 TA = 125°C<br>10<br>TA = 85°C<br>TA = 25°C 0.1<br>1.0 TA = 55°C<br>0.01<br>TA = 25°C<br>0.1 0.001<br>0.2 0.4 0.6 0.8 1.0 1.2 0 10 20 30 40 50<br>VF, FORWARD VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS)<br>�<br>, FORWARD CURRENT (mA)IF , REVERSE CURRENT ( A)IR<br>**----- End of picture text -----**<br> **Figure 2. Forward Voltage** **Figure 3. Leakage Current** **==> picture [241 x 172] intentionally omitted <==** **----- Start of picture text -----**<br> 0.68<br>0.64<br>0.60<br>0.56<br>0.52<br>0 2.0 4.0 6.0 8.0<br>VR, REVERSE VOLTAGE (VOLTS)<br>, DIODE CAPACITANCE (pF)<br>D<br>C<br>**----- End of picture text -----**<br> **Figure 4. Capacitance** **www.onsemi.com** **2** MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** **==> picture [196 x 333] intentionally omitted <==** **----- Start of picture text -----**<br> o 2 © 2<br>1 1<br>STYLE 1 STYLE 2<br>SCALE 4:1<br>−X−<br>D<br>−Y−<br>— —<br>E<br>1 2<br>2X b qe<br>0.08 M X Y<br>TOP VIEW<br>A<br>id 4,<br>c IL HE<br>SIDE VIEW<br>2X L<br>ste<br>2X L2 JE<br>BOTTOM VIEW<br>**----- End of picture text -----**<br> **==> picture [144 x 104] intentionally omitted <==** **----- Start of picture text -----**<br> RECOMMENDED<br>SOLDERING FOOTPRINT*<br>2X 1.80<br>0.48 2X<br>0.40<br>TH ) ,<br>PACKAGE ao<br>OUTLINE DIMENSION: MILLIMETERS<br>**----- End of picture text -----**<br> **SOD−523** CASE 502−01 ISSUE E ## DATE 28 SEP 2010 ## NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. **==> picture [185 x 292] intentionally omitted <==** **----- Start of picture text -----**<br> 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PRO-<br>TRUSIONS, OR GATE BURRS.<br>MILLIMETERS<br>DIM MIN NOM MAX<br>A 0.50 0.60 0.70<br>b 0.25 0.30 0.35<br>c 0.07 0.14 0.20<br>D 1.10 1.20 1.30<br>E 0.70 0.80 0.90<br>H E 1.50 1.60 1.70<br>L 0.30 REF<br>L2 0.15 0.20 0.25<br>====<br>GENERIC<br>MARKING DIAGRAM*<br>XX XX<br>1 2 1 2<br>dj Ff q_<br>STYLE 1 STYLE 2<br>XX = Specific Device Code<br>M Date Code Ff<br>*This information is generic. Please refer to<br>device data sheet for actual part marking.<br>Pb−Free indicator, “G” or microdot “ ”,<br>may or may not be present.<br>STYLE 1: STYLE 2:<br>PIN 1. CATHODE (POLARITY BAND) NO POLARITY<br>2. ANODE<br>M M<br>**----- End of picture text -----**<br> - *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Electronic versions are uncontrolled except when accessed directly from the Document Repository. **DOCUMENT NUMBER: 98AON11524D** Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. **DESCRIPTION: SOD−523 PAGE 1 OF 1** ~~_ 1~~ ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. www.onsemi.com © Semiconductor Components Industries, LLC, 2019 **onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi** ’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and **onsemi** makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use **onsemi** products for any such unintended or unauthorized application, Buyer shall indemnify and hold **onsemi** and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that **onsemi** was negligent regarding the design or manufacture of the part. **onsemi** is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. ## **PUBLICATION ORDERING INFORMATION** **LITERATURE FULFILLMENT** : **TECHNICAL SUPPORT Email Requests to:** orderlit@onsemi.com **North American Technical Support: Europe, Middle East and Africa Technical Support:** Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 00421 33 790 2910 **onsemi Website:** www.onsemi.com Phone: 011 421 33 790 2910 For additional information, please contact your local Sales Representative ◊ **==> picture [232 x 43] intentionally omitted <==**
Updated at June 8, 2026
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
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