1SS355TE-17
Small Signal Diode, High Speed Switching, 90 V, 100 mA, 1.2 V, 4 ns, 225 mA
- Manufacturer: ROHM
- Product type: Small Signal Diodes
- Diode Configuration:-; Repetitive Reverse Voltage Vrrm Max:90V; Forward Current If(AV):100mA; Forward Voltage VF Max:1.2V; Reverse Recovery Time trr Max:4ns; Forward Surge Current Ifsm Max:225
- SVHC: Lead (23-Jan-2024)
- No. of Pins: 2Pins
- Product Range: 1SS35
- Qualification: -
- Diode Mounting: Surface Mount
- Diode Case Style: SOD-323
- Diode Configuration: -
- Forward Voltage Max: 1.2V
- Forward Surge Current: 225mA
- Reverse Recovery Time: 4ns
- Average Forward Current: 100mA
- Operating Temperature Max: 150°C
- Repetitive Peak Reverse Voltage: 90V
| Delivery and price | |
|---|---|
| Units per pack | 5 |
| Price | 0.056 € |
| Current stock | 10+ |
| Lead time | 30 days |
1SS355 Diodes ## Switching diode ## **1SS355** � **Applications** High speed switching ## � **Features** 1) Ultra small mold type.(UMD2) 2) High reliability. � **Construction** Silicon epitaxial planar **==> picture [255 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> � Dimensions (Unit : mm) � Land size figure (Unit : mm)<br>**----- End of picture text -----**<br> **==> picture [252 x 186] intentionally omitted <==** **----- Start of picture text -----**<br> 1.25±0.1 0.1±0.1<br> 0.05 0.9MIN.<br>UMD2<br>0.3±0.05 0.7±0.2 0.1 � Structure<br>ROHM : UMD2<br>JEDEC : S0D-323<br>JEITA : SC-90/A<br>dot (year week factory)<br>0.8MIN.<br>2.1<br>1.7±0.1 2.5±0.2<br>**----- End of picture text -----**<br> ## � **Taping specification** (Unit : mm) **==> picture [297 x 127] intentionally omitted <==** **----- Start of picture text -----**<br> 4.0±0.1 2.0±0.05 φ1.55±0.05 0.3±0.1<br>1.40±0.1 4.0±0.1 φ1.05<br>1.0±0.1<br>1.75±0.1<br>3.5±0.05 8.0±0.2<br>2.8±0.1<br>2.75<br>**----- End of picture text -----**<br> ## � **Absolute maximum ratings** (Ta=25°C) |�**Absolute maximum ratings**(Ta=2|5°C)||| |---|---|---|---| |Parameter|Symbol|Limits|Unit| |Reverse voltage(repetitivepeak)|VRM|90|V| |Reverse voltage(DC)|VR|80|V| |Forward current|IFM|225|mA| |Average rectified forward current|Io|100|mA| |Surge current(t=1s)|Isurge|500|mA| |Junction temperature|Tj|150|℃| |Storage temperature|Tstg|-55 to +150|℃| ## � **Electrical characteristics** (Ta=25°C) |Parameter|Symbol|Min.|Typ.|Max.|Unit|Conditions| |---|---|---|---|---|---|---| |Forward voltage|VF|-|-|1.2|V|IF=100mA| |Reverse current|IR|-|-|0.1|µA|VR=80V| |Capacitance between terminals|Ct|-|-|3|pF|VR=0.5V,f=1MHz| |Reverse recovery time|trr|-|-|4|ns|VR=6V , IF=10mA , RL=100Ω| Rev.C 1/3 1SS355 Diodes ## � **Electrical characteristic curves** (Ta=25°C) **==> picture [427 x 555] intentionally omitted <==** **----- Start of picture text -----**<br> 100 10 10<br>Ta=125℃ f=1MHz<br>Ta=125℃ 1<br>Ta=75℃<br>10<br>Ta=75℃ 0.1<br>Ta=25℃ Ta=25℃ 1<br>0.01 Ta=-25℃<br>1 Ta=-25℃<br>0.001<br>0.1 0.0001 0.1<br>0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 0 20 40 60 80 100 120 0 10 20 30<br>FORWARD VOLTAGE:VF(mV) REVERSE VOLTAGE:VR(V) REVERSE VOLTAGE:VR(V)<br>VF-IF CHARACTERISTICS VR-IR CHARACTERISTICS VR-Ct CHARACTERISTICS<br>950 100 1<br>Ta=25 90 Ta=25℃ 0.99 Ta=25℃<br>940 IFn==100mA30pcs 80 n=30pcsVR=80V 0.98 VR=0.5Vf=1MHz<br>70 0.97 n=10pcs<br>930 60 0.96<br>50 0.95<br>920 40 0.94 AVE:0.961pF<br>30 0.93<br>910 AVE:922.4mV 20 0.92<br>10 AVE:31.7nA 0.91<br>900 0 0.9<br>VF DISPERSION MAP IR DISPERSION MAP Ct DISPERSION MAP<br>20 3 20<br>Ifsm 1cyc 2.5 Ta=25℃ VR=6V Ifsm<br>15 IF=10mA 15 8.3ms 8.3ms<br>8.3ms RL=100Ω<br>2 1cyc<br>10 1.5 10<br>1<br>5 AVE:13.6A AVE:1.3ns 5<br>0.5<br>0 0 0<br>0.1 1 10 100<br>IFSM DISRESION MAP trr DISPERSION MAP NUMBER OF CYCLES<br>IFSM-CYCLE CHARACTERISTICS<br>100 1000 0.001<br>Rth(j-a)<br>Ifsm<br>t<br>100<br>Rth(j-c)<br>10 Mounted on epoxy board 0.0005<br>D=1/2<br>10 IM=1mA IF=10mA DC<br>Sin(θ=180)<br>1ms time<br>300us<br>1 1 0<br>0.1 1 10 100 0.001 0.01 0.1 1 10 100 1000 0 20 40 60 80 100 120<br>TIME:t(ms) TIME:t(s) REVERSE VOLTAGE:VR(V)<br>IFSM-t CHARACTERISTICS Rth-t CHARACTERISTICS VR-PR CHARACTERISTICS<br>TERMINALS:Ct(pF)<br>FORWARD CURRENT:IF(mA) REVERSE CURRENT:IR(uA) CAPACITANCE BETWEEN<br>IF(mA)<br>TERMINALS:Ct(pF)<br>FORWARD VOLTAGE:VF(mA) REVERSE CURRENT:IR(nA) CAPACITANCE BETWEEN<br>PEAK SURGE PEAK SURGE<br>FORWARD CURRENT:IFSM(A) FORWARD CURRENT:IFSM(A)<br>RESERVE RECOVERY TIME:trr(ns)<br>(W)<br>PEAK SURGE TRANSIENT R<br>REVERSE POWER DISSIPATION:P<br>FORWARD CURRENT:IFSM(A)<br>THAERMAL IMPEDANCE:Rth (℃/W)<br>**----- End of picture text -----**<br> Rev.C 2/3 1SS355 Diodes **==> picture [448 x 130] intentionally omitted <==** **----- Start of picture text -----**<br> 0.2 0.20 20<br>DC DC<br>0.15 0.15 15<br>D=1/2 Sin(θ=180) D=1/2 Sin(θ=180) AVE:9.4kV<br>0.1 0.10 10<br>0.05 0A 0V VR Io 0.05 0A0V t VRIo 5 AVE:2.4kV<br>t D=t/T<br>D=t/T VR=40V<br>VR=40V T Tj=150℃<br>0 T Tj=150℃ 0.00 0 C=200pF C=100pF<br>0 25 50 75 100 125 150 0 25 50 75 100 125 150 R=0Ω R=1.5kΩ<br>AMBIENT TEMPERATURE:Ta(℃) CASE TEMPARATURE:Tc(℃)<br>Derating Curve゙(Io-Ta) Derating Curve゙(Io-Tc) ESD DISPERSION MAP<br>AVERAGE RECTIFIED ELECTROSTATIC<br>FORWARD CURRENT:Io(A) AVERAGE RECTIFIED<br>FORWARD CURRENT:Io(A)<br>DDISCHARGE TEST ESD(KV)<br>**----- End of picture text -----**<br> Rev.C 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of which would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM cannot be held responsible for any damages arising from the use of the products under conditions out of the range of the specifications or due to non-compliance with the NOTES specified in this catalog. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact your nearest sales office. ## **ROHM** Customer Support System ## www.rohm.com **THE AMERICAS** / **EUPOPE** / **ASIA** / **JAPAN** **Contact us** : webmaster@ rohm.co.jp Copyright © 2007 ROHM CO.,LTD. 21, Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615-8585, Japan TEL : +81-75-311-2121 FAX : +81-75-315-0172 Appendix1-Rev2.0
Updated at April 27, 2026
Founded with a steadfast commitment to a "Quality First" corporate policy, ROHM is a globally recognized leader in the design and manufacture of semiconductors and electronic components. Originally named for its foundational product, resistors, combined with the unit of resistance, the "R" in ROHM has evolved to represent the brand's enduring dedication to reliability. Today, the company is renowned for driving technological advancement and supplying high-performance, dependable solutions to engineers worldwide. The company's engineering excellence is most prominently showcased in its expansive portfolio of discrete semiconductors. ROHM provides an industry-leading selection of bipolar transistors, alongside a massive array of Zener single diodes, Schottky diodes, and small signal diodes. Engineered for rigorous efficiency and compact footprint requirements, these foundational components are critical for modern power management, precise signal processing, and high-speed switching applications. In addition to its core discrete offerings, ROHM delivers advanced power control and circuit protection solutions. This includes a highly trusted lineup of single and dual MOSFETs, single IGBTs, and transient voltage suppressors (TVS diodes) designed to safeguard sensitive circuitry. Complemented by intelligent power modules, precision sensors, and specialized ICs, ROHM equips designers with the premium components necessary to build the next generation of robust electronic infrastructure.
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