1SR156-400TE25
Standard Recovery Diode, 400 V, 1 A, Single, 1.3 V, 0.4 µs, 20 A
- Manufacturer: ROHM
- Product type: Standard Recovery Rectifier Diodes
- Repetitive Reverse Voltage Vrrm Max:400V; Forward Current If(AV):1A; Diode Configuration:Single; Forward Voltage VF Max:1.3V; Reverse Reco; Available until stocks are exhausted Alternative available
- SVHC: Lead (23-Jan-2024)
- No. of Pins: 2Pins
- Product Range: 1SR15
- Qualification: -
- Diode Case Style: SOD-106
- Diode Configuration: Single
- Forward Voltage Max: 1.3V
- Forward Surge Current: 20A
- Reverse Recovery Time: 0.4µs
- Average Forward Current: 1A
- Operating Temperature Max: 150°C
- Repetitive Peak Reverse Voltage: 400V
| Delivery and price | |
|---|---|
| Units per pack | 100 |
| Price | 0.131 € |
| Current stock | 10+ |
| Lead time | 30 days |
Data Sheet | 7 ## Rectifier diode ## **1SR156-400** **==> picture [493 x 207] intentionally omitted <==** **----- Start of picture text -----**<br> Applications Dimensions (Unit : mm) Land size figure (Unit : mm)<br>For fast rectifier<br>2.0<br>2.6±0.2<br> Features<br>1) Small power mold type. (PMDS) 2 4<br>2) High reliability.<br>① ② 0.1±0.02<br>3) High switching speed. 0.1<br>2.0±0.2 PMDS<br>1.5±0.2<br> Construction “| 4 (3<br>Silicon diffused junction Structure<br>ROHM : PMDS<br>JEDEC : SOD-106<br>① ② Manufacture Date<br>2.0<br>1.2±0.3 4.2<br>4.5±0.2<br>5.0±0.3<br>**----- End of picture text -----**<br> ## **Taping dimensions** (Unit : mm) **==> picture [276 x 146] intentionally omitted <==** **----- Start of picture text -----**<br> 2.0±0.05<br>4.0±0.1 φ1.55±0.05 0.3<br>φ1.55<br>2.9±0.1 4.0±0.1<br>2.8MAX<br>1.75±0.1<br>5.5±0.05<br>12±0.2<br>9.5±0.1<br>5.3±0.1 0.05<br>**----- End of picture text -----**<br> ## **Absolute maximum ratings** (Ta=25C) |**Absolute maximum ratingsgss** (Ta=25C)Ta=25C)|(Ta=25C)Ta=25C)C)C))||| |---|---|---|---| |Parameter|Symbol|Limits|Unit| |Reverse voltage(repetitivepeak)|VRMS|500|V| |Reverse voltage(DC)|VR|400|V| |Average rectified forward current (*1)|Io|1|A| |Forward current surge peak (60Hz・1cyc)|IFSM|20|A| |Junction temperature|Tj|150|C| |Storage temperature|Tstg|55 to +150|C| (*1) Mounted on alumina board **Electrical characteristics** (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage VF - - 1.3 V IF=0.8A Reverse current IR - - 10 uA VR=400V ~~——ee~~ Reverse recovery time trr - - 0.4 us IF=10mA, IR=10mA, Irr=1mA www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. **2011.06 - Rev.A** 1/3 Data Sheet **1SR156-400** **==> picture [501 x 647] intentionally omitted <==** **----- Start of picture text -----**<br> 1000 1000000 100<br>Ta=75℃ Ta=150℃ Ta=125℃ f=1MHz<br>100000<br>Ta=125℃<br>100 Ta=150℃ Ta=25℃ 10000 10<br>Ta=75℃<br>Ta=25℃ 1000<br>Ta=25℃<br>10 100 1<br>Ta=25℃<br>10<br>1 1 0.1<br>0 200 400 600 800 1000 1200 0 100 200 300 400 0 5 10 15 20 25 30<br>FORWARD VOLTAGE:VF(mV) REVERSE VOLTAGE:VR(V) REVERSE VOLTAGE:VR(V)<br>VF-IF CHARACTERISTICS VR-IR CHARACTERISTICS VR-Ct CHARACTERISTICS<br>1000 45<br>1050 Ta=25℃ 900 VTa=25R=400V℃ 40 Ta=25f=1MHz℃<br>1040 nIF==0.8A30pcs 800700 n=30pcs 3530 AVE:38.3pF n=10pcsVR=0V<br>1030 600 25<br>500<br>20<br>1020 400<br>15<br>300<br>1010 AVE:1020.5mV 200 AVE:97.5nA 10<br>100 5<br>1000 0 0<br>VF DISPERSION MAP IR DISPERSION MAP Ct DISPERSION MAP<br>150 240 50<br>Ta=25℃<br>Ifsm 1cyc 230 IF=10mA Ifsm<br>220 IR=10mA 40<br>100 8.3ms 210 Irr=0.10*In=10pcsR 30 8.3ms1cyc8.3ms<br>200<br>AVE:34.0A 190 20<br>50 AVE:200.7ns<br>180<br>10<br>170<br>0 160 0<br>1 10 100<br>trr DISPERSION MAP NUMBER OF CYCLES<br>IFSM DISRESION MAP IFSM-CYCLE CHARACTERISTICS<br>100 1000 Mounted on epoxy board 3<br>IM=1mA I F =0.5A 2.5<br>80 Ifsm t 100 1ms tim Rth(j-a) 2 D=1/2 DC<br>60 300us Sin(θ=180)<br>10 Rth(j-c) 1.5<br>40<br>1<br>1<br>20<br>0.5<br>0 0.1 0<br>1 10 100 0.001 0.01 0.1 1 10 100 1000 0 1 2<br>TIME:t(ms)<br>IFSM-t CHARACTERISTICS Rth-t CHARACTERISTICSTIME:t(s) FORWARD CURRENTAVERAGE RECTIFIED:Io(A)<br>Io-Pf CHARACTERISTICS<br>FORWARD CURRENT : I(mA)F REVERSE CURRENT : I(nA)R<br>CAPACITANCE BETWEEN TERMINALS:Ct(pF)<br>FORWARD VOLTAGE : V(mV)F REVERSE CURRENT : I(nA)R<br>CAPACITANCE BETWEEN TERMINALS:Ct(pF)<br>(A) (A)<br>FSM FSM<br>PEAK SURGE PEAK SURGE<br>FORWARD CURRENT : I FORWARD CURRENT : I<br>REVERSE RECOVERY TIME:trr(ns)<br>/W)<br>(A) ℃<br>FSM<br>PEAK SURGE TRANSIENT<br>FORWARD CURRENT : I FORWARD POWER DISSIPATION:Pf(W)<br>THAERMAL IMPEDANCE:Rth (<br>**----- End of picture text -----**<br> www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. **2011.06 - Rev.A** 2/3 Data Sheet **1SR156-400** **==> picture [494 x 302] intentionally omitted <==** **----- Start of picture text -----**<br> 0.1 3 3<br>0 A Io 0A Io<br>0.08 2.5 0V t D=t/T VR 2.5 0V t D=t/T VR<br>0.06 Sin(θ=180) 2 DC T V Tj=150R =200V ℃ 2 DC T VTRj=200V=150℃<br>D=1/2 1.5 D=1/2 1.5<br>0.04 D=1/2<br>DC 1 1<br>Sin(θ=180)<br>0.02 0.5 0.5<br>Sin(θ=180)<br>0 0 0<br>0 100 200 300 400 0 25 50 75 100 125 150 0 25 50 75 100 125 150<br>REVERSE VOLTAGE:VVR-PR CHARACTERISTICSR(V) AMBIENT TEMPERATURE:Ta(Derating Curve゙(Io-Ta) ℃) CASE TEMPARATURE:Tc(Derating Curve゙(Io-Tc) ℃)<br>30<br>No break at 30kV<br>25<br>20<br>15<br>10 AVE:14.6kV<br>5<br>0<br>C=200pF C=100pF<br>R=0Ω R=1.5kΩ<br>ESD DISPERSION MAP<br>(W)<br>R<br>REVERSE POWER DISSIPATION:P AVERAGE RECTIFIED AVERAGE RECTIFIED<br>FORWARD CURRENT:Io(A) FORWARD CURRENT:Io(A)<br>ELECTROSTATIC<br>DISCHARGE TEST ESD(KV)<br>**----- End of picture text -----**<br> www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. **2011.06 - Rev.A** 3/3 Notice ## N o t e s Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ## ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A
Updated at April 22, 2026
Founded with a steadfast commitment to a "Quality First" corporate policy, ROHM is a globally recognized leader in the design and manufacture of semiconductors and electronic components. Originally named for its foundational product, resistors, combined with the unit of resistance, the "R" in ROHM has evolved to represent the brand's enduring dedication to reliability. Today, the company is renowned for driving technological advancement and supplying high-performance, dependable solutions to engineers worldwide. The company's engineering excellence is most prominently showcased in its expansive portfolio of discrete semiconductors. ROHM provides an industry-leading selection of bipolar transistors, alongside a massive array of Zener single diodes, Schottky diodes, and small signal diodes. Engineered for rigorous efficiency and compact footprint requirements, these foundational components are critical for modern power management, precise signal processing, and high-speed switching applications. In addition to its core discrete offerings, ROHM delivers advanced power control and circuit protection solutions. This includes a highly trusted lineup of single and dual MOSFETs, single IGBTs, and transient voltage suppressors (TVS diodes) designed to safeguard sensitive circuitry. Complemented by intelligent power modules, precision sensors, and specialized ICs, ROHM equips designers with the premium components necessary to build the next generation of robust electronic infrastructure.
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