# Schottky Rectifier, 40 V, 3 A, Single, DO-201AD, 2 Pins, 525 mV

![Product image](https://novapart.co/image/farnell:3214544/)

**URL**: https://novapart.co/products/1N5822RL/schottky-rectifier-40-v-3-a-single-do-201ad-2-pins
**SKU**: 1N5822RL
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || Diodes & Rectifiers || Schottky Diodes || Schottky Rectifier Diodes
**Price**: €0.0780
**Stock**: 10+
**Lead Time**: 120 days (indicative)

## Description

Repetitive Reverse Voltage Vrrm Max:40V; Forward Current If(AV):3A; Diode Configuration:Single; Diode Case Style:DO-201AD; No. of Pins:2Pins; Forward Voltage VF Max:525mV; Forward S

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 2Pins |
| Product Range | 1N582x |
| Qualification | - |
| Diode Mounting | Through Hole |
| Diode Case Style | DO-201AD |
| Diode Configuration | Single |
| Forward Voltage Max | 525mV |
| Forward Surge Current | 80A |
| Average Forward Current | 3A |
| Operating Temperature Max | 150°C |
| Repetitive Peak Reverse Voltage | 40V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3214544/)

**1N582x** 

® LOW DROP POWER SCHOTTKY RECTIFIER **MAIN PRODUCTS CHARACTERISTICS IF(AV) 3 A V** RRM **40 V T** j **150°C VF (max) 0.475 V FEATURES AND BENEFITS** n VERY SMALL CONDUCTION LOSSES n NEGLIGIBLE SWITCHING LOSSES n EXTREMELY FAST SWITCHING n LOW FORWARD VOLTAGE DROP n AVALANCHE CAPABILITY SPECIFIED **DO-201AD DESCRIPTION** ana Axial Power Schottky rectifier suited for Switch Mode Power Supplies and high frequency DC to DC converters. Packaged in DO-201AD these devices are intended for use in low voltage, high frequency inverters, free wheeling, polarity protection and small battery chargers. 

## **ABSOLUTE RATINGS** (limiting values) 

|**Symbol**|**Parameter**|**Parameter**|**1N5820 **|**Value**<br> **1N5821 **|**1N5822**|**Unit**|
|---|---|---|---|---|---|---|
|VRRM|Repetitive peak reverse voltage||20|30|40|V|
|IF(RMS)|RMS forward current|||10||A|
|IF(AV)|Average forward current|TL= 100°C<br>δ= 0.5|||3|A|
|||TL= 110°C<br>δ= 0.5|3|3||A|
|IFSM|Surge non repetitive forward<br>current|tp = 10 ms<br>Sinusoidal||80||A|
|PARM|Repetitive peak avalanche<br>power|tp = 1µs<br>Tj = 25°C||1700||W|
|Tstg|Storage temperature range||- 65 to + 150|||°C|
|Tj|Maximum operating junction temperature *|||150||°C|
|dV/dt|Critical rate of rise of reverse voltage|||10000||V/µs|



* : dPtot < 1 thermal runaway condition for a diode on its own heatsink dTj Rth(j − a) 

July 2003 - Ed: 3A 

1/5 

**1N582x** 

## **THERMAL RESISTANCES** 

**==> picture [461 x 59] intentionally omitted <==**

**----- Start of picture text -----**<br>
Symbol Parameter Value Unit<br>Rth (j-a) Junction to ambient Lead length = 10 mm 80 °C/W<br>Rth (j-l) Junction to lead Lead length = 10 mm 25 °C/W<br>**----- End of picture text -----**<br>


## **STATIC ELECTRICAL CHARACTERISTICS** 

**==> picture [461 x 102] intentionally omitted <==**

**----- Start of picture text -----**<br>
Symbol Parameter Tests Conditions 1N5820 1N5821 1N5822 Unit<br>IR * Reverse leakage Tj = 25°C VR = VRRM 2 2 2 mA<br>current<br>Tj = 100°C 20 20 20 mA<br>VF * Forward voltage drop Tj = 25°C IF = 3 A 0.475 0.5 0.525 V<br>Tj = 25°C IF = 9.4 A 0.85 0.9 0.95 V<br>**----- End of picture text -----**<br>


Pulse test : * tp = 380 µs, δ < 2% 

To evaluate the conduction losses use the following equations : P = 0.33 x IF(AV) + 0.035 IF[2] (RMS ) for 1N5820 / 1N5821 P = 0.33 x IF(AV) + 0.060 IF[2] (RMS ) for 1N5822 

**Fig. 1:** Average forward power dissipation versus average forward current (1N5820/1N5821). 

**Fig. 2:** Average forward power dissipation versus average forward current (1N5822). 

**==> picture [221 x 138] intentionally omitted <==**

**----- Start of picture text -----**<br>
PF(av)(W)<br>1.8<br>1.6 δ = 0.1 δ = 0.2 δ = 0.5<br>δ = 0.05<br>1.4 δ = 1<br>1.2<br>1.0<br>0.8<br>0.6<br>T<br>0.4<br>0.2<br>IF(av) (A) δ [=tp/T] tp<br>0.0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0<br>**----- End of picture text -----**<br>


**==> picture [220 x 138] intentionally omitted <==**

**----- Start of picture text -----**<br>
PF(av)(W)<br>2.0<br>1.8 δ = 0.1 δ = 0.2 δ = 0.5<br>1.6 δ = 0.05<br>1.4<br>1.2 δ = 1<br>1.0<br>0.8<br>0.6 T<br>0.4<br>0.2 IF(av) (A) δ [=tp/T] tp<br>0.0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5<br>**----- End of picture text -----**<br>


**Fig. 3:** Normalized avalanche power derating versus pulse duration. 

**Fig. 4:** Normalized avalanche power derating versus junction temperature. 

**==> picture [221 x 134] intentionally omitted <==**

**----- Start of picture text -----**<br>
PARM(tp)<br>PARM(1µs)<br>1<br>0.1<br>0.01<br>0.001 tp(µs)<br>0.01 0.1 1 10 100 1000<br>**----- End of picture text -----**<br>


**==> picture [220 x 131] intentionally omitted <==**

**----- Start of picture text -----**<br>
PARM(tp)<br>PARM(25°C)<br>1.2<br>1<br>0.8<br>0.6<br>0.4<br>0.2<br>T (°C)j<br>0<br>0 25 50 75 100 125 150<br>**----- End of picture text -----**<br>


2/5 

**1N582x** 

**Fig. 5-1:** Average forward current versus ambient temperature (δ=0.5) (1N5820/1N5821). 

**==> picture [221 x 143] intentionally omitted <==**

**----- Start of picture text -----**<br>
IF(av)(A)<br>3.5<br>Rth(j-a)=Rth(j-l)=25°C/W<br>3.0<br>2.5<br>2.0<br>Rth(j-a)=80°C/W<br>1.5<br>1.0 T<br>0.5<br>δ [=tp/T] tp Tamb(°C)<br>0.0<br>0 25 50 75 100 125 150<br>**----- End of picture text -----**<br>


**Fig. 6-1:** Non repetitive surge peak forward current versus overload duration (maximum values) (1N5820/1N5821). 

**==> picture [221 x 137] intentionally omitted <==**

**----- Start of picture text -----**<br>
IM(A)<br>16<br>14<br>12<br>10 Ta=25°C<br>8 Ta=75°C<br>6<br>4 Ta=100°C<br>IM<br>2 t<br>δ=0.5 t(s)<br>0<br>1E-3 1E-2 1E-1 1E+0<br>**----- End of picture text -----**<br>


**Fig. 7:** Relative variation of thermal impedance junction to ambient versus pulse duration (epoxy printed circuit board, e(Cu)=35mm, recommended pad layout). 

**==> picture [221 x 136] intentionally omitted <==**

**----- Start of picture text -----**<br>
Zth(j-a)/Rth(j-a)<br>1.0<br>0.8<br>0.6<br>δ = 0.5<br>0.4<br>δ = 0.2 T<br>0.2<br>δ = 0.1<br>Single pulse tp(s) δ [=tp/T] tp<br>0.0<br>1E-1 1E+0 1E+1 1E+2 1E+3<br>**----- End of picture text -----**<br>


**Fig. 5-2:** Average forward current versus ambient temperature (δ=0.5) (1N5822). 

**==> picture [220 x 139] intentionally omitted <==**

**----- Start of picture text -----**<br>
IF(av)(A)<br>3.5<br>Rth(j-a)=Rth(j-l)=25°C/W<br>3.0<br>2.5<br>2.0<br>Rth(j-a)=80°C/W<br>1.5<br>1.0<br>T<br>0.5<br>δ [=tp/T] tp Tamb(°C)<br>0.0<br>0 25 50 75 100 125 150<br>**----- End of picture text -----**<br>


**Fig. 6-2:** Non repetitive surge peak forward current versus overload duration (maximum values) (1N5822). 

**==> picture [220 x 138] intentionally omitted <==**

**----- Start of picture text -----**<br>
IM(A)<br>12<br>11<br>10<br>9<br>8 Ta=25°C<br>7<br>6 Ta=75°C<br>5<br>4<br>Ta=100°C<br>3<br>2 IM<br>1 δ=0.5 t t(s)<br>0<br>1E-3 1E-2 1E-1 1E+0<br>**----- End of picture text -----**<br>


**Fig. 8:** Junction capacitance versus reverse voltage applied (typical values). 

**==> picture [220 x 140] intentionally omitted <==**

**----- Start of picture text -----**<br>
C(pF)<br>600<br>F=1MHz<br>Tj=25°C<br>1N5820<br>1N5821<br>1N5822<br>100<br>VR(V)<br>10<br>1 2 5 10 20 40<br>**----- End of picture text -----**<br>


3/5 

**1N582x** 

**Fig. 9-1:** Reverse leakage current versus reverse voltage applied (typical values) (1N5820/1N5821). 

**==> picture [221 x 138] intentionally omitted <==**

**----- Start of picture text -----**<br>
IR(mA)<br>1E+2<br>1N5821<br>1E+1 Tj=125°C 1N5820<br>1E+0 Tj=100°C<br>1E-1<br>Tj=25°C<br>1E-2<br>VR(V)<br>1E-3<br>0 5 10 15 20 25 30<br>**----- End of picture text -----**<br>


**Fig. 10-1:** Forward voltage drop versus forward current (typical values) (1N5820/1N5821). 

**==> picture [222 x 142] intentionally omitted <==**

**----- Start of picture text -----**<br>
IFM(A)<br>50.00<br>10.00<br>Tj=125°C<br>1.00 Tj=100°C<br>Tj=25°C<br>0.10<br>VFM(V)<br>0.01<br>0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1<br>**----- End of picture text -----**<br>


**Fig. 9-2:** Reverse leakage current versus reverse voltage applied (typical values) (1N5822). 

**==> picture [220 x 138] intentionally omitted <==**

**----- Start of picture text -----**<br>
IR(mA)<br>5E+1<br>1E+1<br>Tj=125°C<br>1E+0<br>Tj=100°C<br>1E-1<br>1E-2 Tj=25°C<br>VR(V)<br>1E-3<br>0 5 10 15 20 25 30 35 40<br>**----- End of picture text -----**<br>


**Fig. 10-2:** Forward voltage drop versus forward current (typical values) (1N5822). 

**==> picture [221 x 140] intentionally omitted <==**

**----- Start of picture text -----**<br>
IFM(A)<br>50.00<br>10.00<br>Tj=125°C<br>1.00 Tj=100°C<br>Tj=25°C<br>0.10<br>VFM(V)<br>0.01<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6<br>**----- End of picture text -----**<br>


**Fig. 11:** Non repetitive surge peak forward current versus number of cycles. 

**==> picture [221 x 137] intentionally omitted <==**

**----- Start of picture text -----**<br>
IFSM(A)<br>100<br>F=50Hz Tj initial=25°C<br>80<br>60<br>40<br>20<br>Number of cycles<br>0<br>1 10 100 1000<br>**----- End of picture text -----**<br>


4/5 

**1N582x** 

## **PACKAGE MECHANICAL DATA** 

DO-201AD plastic 

||||||**B**|**B**|||||**A**||||**B**|**B**||**ØC**|**ØC**|||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
||||||**note**|**1**|||**E**||||**E**|**note**|**1**|||||||
|||||||||||||||||||||||
|||||||||||||||||||||||
|||||||||||||||||||||||
|||||||||||||||||||||||
|||||||||||||||||||||||
|||||||||**ØD**|||||**ØD**|||||||||
||||||||||||**note 2**|||||||||||
|||||||||||||||||||||||
|||||||||||||||||||||||
||||**DIMENSIONS**|||||||||||||||||||
||**REF.**|**Millimeters**|||**Inches**|||||||||||**NOTES**||||||
|||**Min.**|**Max.**||**Min.**|||**Max.**||||||||||||||
||A||9.50|||||0.374|||1 - The lead|diameter♠D is|||||not|controlled over zone E||||
||B|25.40|||1.000|||||||||||||||||
||♠C||5.30|||||0.209|||2 - The minimum axial length within which the device may be|||||||||||
||♠D||1.30|||||0.051|||placed with its leads bent at right|||||||angles is 0.59"(15 mm)||||
||E||1.25|||||0.049||||||||||||||



**==> picture [461 x 77] intentionally omitted <==**

**----- Start of picture text -----**<br>
Ordering type Marking Package Weight Base qty Delivery mode<br>1N582x Part number DO-201AD 1.12g 600 Ammopack<br>cathode ring<br>1N582xRL Part number DO-201AD 1.12g 1900 Tape & reel<br>cathode ring<br>**----- End of picture text -----**<br>


> n EPOXY MEETS UL94,V0 

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. 

The ST logo is a registered trademark of STMicroelectronics 

© 2003 STMicroelectronics - Printed in Italy - All rights reserved. 

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5/5 



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