# Schottky Rectifier, General Purpose, 40 V, 3 A, Single, DO-201AD, 2 Pins, 525 mV

![Product image](https://novapart.co/image/farnell:1458993/)

**URL**: https://novapart.co/products/1N5822G/schottky-rectifier-general-purpose-40-v-3-a-single
**SKU**: 1N5822G
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || Diodes & Rectifiers || Schottky Diodes || Schottky Rectifier Diodes
**Price**: €0.2040
**Stock**: 1000+
**Lead Time**: 78 days (indicative)

## Description

Repetitive Reverse Voltage Vrrm Max:40V; Forward Current If(AV):3A; Diode Configuration:Single; Diode Case Style:DO-201AD; No. of Pins:2Pins; Forward Voltage VF Max:525mV; Forward Surge Curren

## Specifications

| Parameter | Value |
|---|---|
| Svhc | Lead (25-Jun-2025) |
| No. Of Pins | 2Pins |
| Product Range | 1N5822 |
| Qualification | - |
| Diode Mounting | Through Hole |
| Diode Case Style | DO-201AD |
| Diode Configuration | Single |
| Forward Voltage Max | 525mV |
| Forward Surge Current | 80A |
| Average Forward Current | 3A |
| Operating Temperature Max | 125°C |
| Repetitive Peak Reverse Voltage | 40V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1458993/)

## 1N5820, 1N5821, 1N5822 

**1N5820 and 1N5822 are Preferred Devices** 

## Axial Lead Rectifiers 

This series employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low-voltage, high-frequency inverters, free wheeling diodes, and polarity protection diodes. 

## **Features** 

- Extremely Low V F 

- 

- 

**http://onsemi.com** 

**SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES 20, 30, 40 VOLTS** 

- 

- 

the part number 

- 

## **Mechanical Characteristics:** 

- 

- 

- 

   - Leads are Readily Solderable 

- Lead Temperature for 260°C Max. for 10 Seconds 

- 

**==> picture [52 x 37] intentionally omitted <==**

**----- Start of picture text -----**<br>
AXIAL LEAD<br>CASE 267-05<br>(DO-201AD)<br>STYLE 1<br>**----- End of picture text -----**<br>


## **MARKING DIAGRAM** 

**==> picture [146 x 127] intentionally omitted <==**

**----- Start of picture text -----**<br>
A<br>1N<br>582x<br>YYWW<br>A = Assembly Location<br>1N582x = Device Code<br>x = 0, 1, or 2<br>YY = Year<br>WW = Work Week<br>= Pb-Free Package<br>(Note: Microdot may be in either location)<br>**----- End of picture text -----**<br>


## **ORDERING INFORMATION** 

See detailed ordering and shipping information on page 3 of this data sheet. 

> *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

**Preferred** devices are recommended choices for future use and best overall value. 

Publication Order Number: **1N5820/D** 

**1** 

© Semiconductor Components **December, 2007 - Rev. 10** 

**1N5820, 1N5821, 1N5822** 

## **MAXIMUM RATINGS** 

|**MAXIMUM RATINGS**|||||||
|---|---|---|---|---|---|---|
|**Rating**|**Symbol**|**1N5820**|**1N5821**||**1N5822**|**Unit**|
|Peak Repetitive Reverse Voltage<br>Working Peak Reverse Voltage<br>DC Blocking Voltage|VRRM<br>VRWM<br>VR|20|30||40|V|
|Non-Repetitive Peak Reverse Voltage|VRSM|24|36||48|V|
|RMS Reverse Voltage|VR(RMS)|14|21||28|V|
|Average Rectified Forward Current (Note 1)<br>VR(equiv) �0.2 VR(dc), TL= 95°C<br>(R�JA= 28°C/W, P.C. Board Mounting, see Note 5)|IO|3.0||||A|
||||||||
|Ambient Temperature<br>Rated VR(dc), PF(AV)= 0<br>R�JA= 28°C/W|TA|90|85||80|°C|
|Non-Repetitive Peak Surge Current<br>(Surge applied at rated load conditions, half wave, single phase<br>60 Hz, TL= 75°C)|IFSM|80 (for one||cycle)||A|
|Operating and Storage Junction Temperature Range<br>(Reverse Voltage applied)|TJ, Tstg|-65 to +125||||°C|



Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 

## ***THERMAL CHARACTERISTICS** (Note 5) 

|***THERMAL CHARACTERISTICS**(Note 5)||||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Max**|**Unit**|
|Thermal Resistance, Junction-to-Ambient|R�JA|28|°C/W|



## ***ELECTRICAL CHARACTERISTICS** (TL = 25°C unless otherwise noted) (Note 1) 

|***ELECTRICAL CHARACTERISTICS**(TL= 25°C unless otherwise noted) (N|ote 1)|||||
|---|---|---|---|---|---|
|**Characteristic**|**Symbol**|**1N5820**|**1N5821**|**1N5822**|**Unit**|
|Maximum Instantaneous Forward Voltage (Note 2)<br>(iF= 1.0 Amp)<br>(iF= 3.0 Amp)<br>(iF= 9.4 Amp)|VF|0.370<br>0.475<br>0.850|0.380<br>0.500<br>0.900|0.390<br>0.525<br>0.950|V|
|Maximum Instantaneous Reverse Current<br>@ Rated dc Voltage (Note 2)<br>TL= 25°C<br>TL= 100°C|iR|2.0<br>20|2.0<br>20|2.0<br>20|mA|



1. Lead Temperature reference is cathode lead 1/32″ from case. 

2. Pulse Test: Pulse Width = 300 �s, Duty Cycle = 2.0%. 

*Indicates JEDEC Registered Data for 1N5820-22. 

**http://onsemi.com** 

**2** 

**1N5820, 1N5821, 1N5822** 

## **ORDERING INFORMATION** 

|**ORDERING INFORMATION**|||
|---|---|---|
|**Device**|**Package**|**Shipping**†|
|1N5820|Axial Lead|500 Units/Bag|
|1N5820G|Axial Lead<br>(Pb-Free)|500 Units/Bag|
|1N5820RL|Axial Lead|1500/Tape & Reel|
|1N5820RLG|Axial Lead<br>(Pb-Free)|1500/Tape & Reel|
|1N5821|Axial Lead|500 Units/Bag|
|1N5821G|Axial Lead<br>(Pb-Free)|500 Units/Bag|
|1N5821RL|Axial Lead|1500/Tape & Reel|
|1N5821RLG|Axial Lead<br>(Pb-Free)|1500/Tape & Reel|
|1N5822|Axial Lead|500 Units/Bag|
|1N5822G|Axial Lead<br>(Pb-Free)|500 Units/Bag|
|1N5822RL|Axial Lead|1500/Tape & Reel|
|1N5822RLG|Axial Lead<br>(Pb-Free)|1500/Tape & Reel|



†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

**http://onsemi.com** 

**3** 

**1N5820, 1N5821, 1N5822** 

## **NOTE 3 — DETERMINING MAXIMUM RATINGS** 

Reverse power dissipation and the possibility of thermal runaway must be considered when operating this rectifier at reverse voltages above 0.1 VRWM. Proper derating may be accomplished by use of equation (1). 

- TA(max) = TJ(max) � R�JAPF(AV) � R�JAPR(AV)(1) 

- where TA(max) = Maximum allowable ambient temperature TJ(max) = Maximum allowable junction temperature (125°C or the temperature at which thermal runaway occurs, whichever is lowest) 

   - PF(AV) = Average forward power dissipation 

   - PR(AV) = Average reverse power dissipation 

   - R�JA = Junction-to-ambient thermal resistance 

Figures 1, 2, and 3 permit easier use of equation (1) by taking reverse power dissipation and thermal runaway into consideration. The figures solve for a reference temperature as determined by equation (2). 

**==> picture [208 x 12] intentionally omitted <==**

Substituting equation (2) into equation (1) yields: 

**==> picture [208 x 11] intentionally omitted <==**

Inspection of equations (2) and (3) reveals that TR is the ambient temperature at which thermal runaway occurs or where TJ = 125°C, when forward power is zero. The transition from one boundary condition to the other is evident on the curves of Figures 1, 2, and 3 as a difference in the rate of change of the slope in the vicinity of 115°C. The data of Figures 1, 2, and 3 is based upon dc conditions. For 

use in common rectifier circuits, Table 1 indicates suggested factors for an equivalent dc voltage to use for conservative design, that is: 

VR(equiv) = V(FM) � F (4) The factor F is derived by considering the properties of the various rectifier circuits and the reverse characteristics of Schottky diodes. 

EXAMPLE: Find TA(max) for 1N5821 operated in a 12-volt dc supply using a bridge circuit with capacitive filter such that IDC = 2.0 A (IF(AV) = 1.0 A), I(FM)/I(AV) = 10, Input ° Voltage = 10 V(rms), R�JA = 40 C/W. 

Step 1. Find VR(equiv). Read F = 0.65 from Table 1, 

�VR(equiv) = (1.41) (10) (0.65) = 9.2 V. 

Step 2. Find TR from Figure 2. Read TR = 108°C 

@ VR = 9.2 V and R�JA = 40°C/W. 

Step 3. Find PF(AV) from Figure 6. **Read PF(AV) = 0.85 W 

**==> picture [123 x 21] intentionally omitted <==**

Step 4. Find TA(max) from equation (3). TA(max) = 108 � (0.85) (40) = 74°C. 

**Values given are for the 1N5821. Power is slightly lower for the 1N5820 because of its lower forward voltage, and higher for the 1N5822. Variations will be similar for the MBR-prefix devices, using PF(AV) from Figure 6. 

**Table 1. Values for Factor F** 

|**Circuit**|**Half**|**Wave**|**Full Wave, Bridge**|**Full Wave, Bridge**|**Full Wave,**<br>**Center Tapped***†|**Full Wave,**<br>**Center Tapped***†|
|---|---|---|---|---|---|---|
|**Load**|**Resistive**|**Capacitive***|**Resistive**|**Capacitive**|**Resistive**|**Capacitive**|
|Sine Wave|0.5|1.3|0.5|0.65|1.0|1.3|
|Square Wave|0.75|1.5|0.75|0.75|1.5|1.5|



*Note that VR(PK) � 2.0 Vin(PK). 

†Use line to center tap voltage for Vin. 

**http://onsemi.com 4** 

**1N5820, 1N5821, 1N5822** 

**==> picture [491 x 629] intentionally omitted <==**

**----- Start of picture text -----**<br>
125 125<br>20<br>15 20<br>10 15<br>8.0 10<br>115 115<br>8.0<br>105 105<br>R�JA (°C/W) = 70 R�JA (°C/W) = 70<br>95 50 95 50<br>40 40<br>28 28<br>85 85<br>75 75<br>2.0 3.0 4.0 5.0 7.0 10 15 20 3.0 4.0 5.0 7.0 10 15 20 30<br>VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS)<br>Figure 1. Maximum Reference Temperature Figure 2. Maximum Reference Temperature<br>1N5820 1N5821<br>125 40<br>20 MAXIMUM<br>35<br>15 TYPICAL<br>115<br>10 30<br>8.0<br>25<br>105<br>20<br>R�JA (°C/W) = 70<br>95<br>15<br>50<br>10<br>85 40<br>BOTH LEADS TO HEATSINK,<br>28 5.0 EQUAL LENGTH<br>75 0<br>4.0 5.0 7.0 10 15 20 30 40 0 1/8 2/8 3/8 4/8 5/8 6/8 7/8 1.0<br>VR, REVERSE VOLTAGE (VOLTS) L, LEAD LENGTH (INCHES)<br>Figure 3. Maximum Reference Temperature Figure 4. Steady-State Thermal Resistance<br>1N5822<br>1.0<br>The temperature of the lead should be measured using a ther‐ ″<br>LEAD LENGTH = 1/4<br>0.5 mocouple placed on the lead as close as possible to the tie point.<br>The thermal mass connected to the tie point is normally large<br>0.3 enough so that it will not significantly respond to heat surges<br>0.2 generated in the diode as a result of pulsed operation oncesteady-state conditions are achieved. Using the measured t Ppk Ppk DUTY CYCLE = tp/t1<br>0.1 value of TL, the junction temperature may be determined by: p TIME PEAK POWER, Ppk, is peak of an<br>TJ = TL + �TJL t1 equivalent square power pulse.<br>0.05 �T JL  = P pk • R� JL  [D + (1 - D) • r(t 1  + t p ) + r(t p ) - r(t 1 )] where:<br>�TJL = the increase in junction temperature above the lead temperature.<br>0.03 r(t) = normalized value of transient thermal resistance at time, t, i.e.:<br>0.02 r(t 1  + t p ) = normalized value of transient thermal resistance at time<br>t1 + tp, etc.<br>0.01<br>0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k<br>t, TIME (ms)<br>° °<br>TR, REFERENCE TEMPERATURE (  C) TR, REFERENCE TEMPERATURE (  C)<br>°<br>°<br>JL, THERMAL RESISTANCE<br>� JUNCTION-TO-LEAD (  C/W)<br>R<br>, REFERENCE TEMPERATURE (  C)<br>R<br>T<br>(NORMALIZED)<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


**Figure 5. Thermal Response** 

**http://onsemi.com** 

**5** 

# **1N5820, 1N5821, 1N5822** 

**==> picture [234 x 174] intentionally omitted <==**

**----- Start of picture text -----**<br>
10<br>7.0<br>SINE WAVE<br>5.0<br>I<br>3.0 (FM) � ��(Resistive�Load)<br>2.0 I(AV) dc<br>5.0<br>1.0 Capacitive SQUARE WAVE<br>10<br>0.7 Loads [�]<br>20<br>0.5<br>0.3<br>0.2 TJ ≈ 125°C<br>0.1<br>0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10<br>IF(AV), AVERAGE FORWARD CURRENT (AMP)<br>, AVERAGE POWER DISSIPATION (WATTS)<br>F(AV)<br>P<br>**----- End of picture text -----**<br>


**Figure 6. Forward Power Dissipation 1N5820-22** 

**NOTE 4 - APPROXIMATE THERMAL CIRCUIT MODEL** 

**==> picture [227 x 76] intentionally omitted <==**

**----- Start of picture text -----**<br>
R�S(A) R�L(A) R�J(A) R�J(K) R�L(K) R�S(K)<br>TA(A) PD TA(K)<br>TL(A) TC(A) TJ TC(K) TL(K)<br>**----- End of picture text -----**<br>


Use of the above model permits junction to lead thermal resistance for any mounting configuration to be found. For a given total lead length, lowest values occur when one side of the rectifier is brought as close as possible to the heat sink. Terms in the model signify: 

TA = Ambient Temperature TC = Case Temperature TL = Lead Temperature TJ = Junction Temperature R�S = Thermal Resistance, Heatsink to Ambient 

R�L = Thermal Resistance, Lead-to-Heatsink 

R�J = Thermal Resistance, Junction-to-Case 

PD = Total Power Dissipation = PF + PR 

PF = Forward Power Dissipation 

PR = Reverse Power Dissipation 

(Subscripts (A) and (K) refer to anode and cathode sides, respectively.) Values for thermal resistance components are: 

R�L = 42°C/W/in typically and 48°C/W/in maximum R�J = 10°C/W typically and 16°C/W maximum The maximum lead temperature may be found as follows: TL = TJ(max) � � TJL where � TJL � R�JL · PD 

**==> picture [468 x 162] intentionally omitted <==**

**----- Start of picture text -----**<br>
|||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
|Mounting Method 1|Mounting Method 3|
|P.C. Board where available|P.C. Board with|
|NOTE 5 — MOUNTING DATA|copper surface is small.|2-1/2, x 2-1/2,|
|copper surface.|
|Data shown for thermal resistance junction-to-ambient (R�JA)|L|L|
|É|
|for the mountings shown is to be used as typical guideline valuesfor preliminary engineering, or in case the tie point temperature|ÉÉÉÉÉÉÉ|É|L = 1/2″|
|cannot be measured.|ÉÉÉÉÉÉÉ|É|
|TYPICAL VALUES FOR|R|�|JA IN STILL AIR|É|
|Lead Length, L (in)|Mounting Method 2|
|Mounting|
|Method|1/8|1/4|1/2|3/4|R|�|JA|L|L|É|BOARD GROUNDPLANE|
|1|50|51|53|55|°C/W|ÉÉÉÉÉÉÉÉ|
|2|58|59|61|63|°C/W|ÉÉÉÉÉÉÉÉ|
|3|28|°C/W|VECTOR PUSH-IN|
|TERMINALS T-28|

**----- End of picture text -----**<br>


**http://onsemi.com 6** 

**1N5820, 1N5821, 1N5822** 

**==> picture [488 x 614] intentionally omitted <==**

**----- Start of picture text -----**<br>
50 100<br>70<br>30<br>50<br>20 TL = 75°C<br>f = 60 Hz<br>TJ = 100°C 30<br>10<br>20<br>7.0 1 CYCLE<br>5.0<br>SURGE APPLIED AT RATED LOAD CONDITIONS<br>25°C 10<br>3.0 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100<br>NUMBER OF CYCLES<br>2.0<br>Figure 8. Maximum Non-Repetitive Surge<br>Current<br>1.0<br>100<br>0.7 50 TJ = 125°C<br>0.5 20<br>10 100°C<br>0.3<br>5.0<br>0.2<br>2.0 75°C<br>1.0<br>0.1 0.5<br>0.07 0.2<br>25°C<br>0.1<br>0.05<br>0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4<br>0.05 1N5820<br>vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 1N5821<br>0.02 1N5822<br>Figure 7. Typical Forward Voltage 0.01<br>0 4.0 8.0 12 16 20 24 28 32 36 40<br>VR, REVERSE VOLTAGE (VOLTS)<br>500<br>Figure 9. Typical Reverse Current<br>1N5820<br>300<br>NOTE 6 — HIGH FREQUENCY OPERATION<br>200<br>TJ = 25°C 1N5821 Since current flow in a Schottky rectifier is the result of<br>f = 1.0 MHz majority carrier conduction, it is not subject to junction di‐<br>ode forward and reverse recovery transients due to minority<br>100<br>carrier injection and stored charge. Satisfactory circuit ana‐<br>70 1N5822 lysis work may be performed by using a model consisting<br>of an ideal diode in parallel with a variable capacitance.<br>0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 (See Figure 10.)<br>VR, REVERSE VOLTAGE (VOLTS)<br>, PEAK HALF-WAVE CURRENT (AMP)<br>IFSM<br>iF, INSTANTANEOUS FORWARD CURRENT (AMP)<br>, REVERSE CURRENT (mA)<br>IR<br>C, CAPACITANCE (pF)<br>**----- End of picture text -----**<br>


**Figure 10. Typical Capacitance** 

**http://onsemi.com** 

**7** 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

**==> picture [410 x 265] intentionally omitted <==**

**----- Start of picture text -----**<br>
AXIAL LEAD<br>CASE 267−05<br>ISSUE G DATE 06/06/2000<br>SCALE 1:1 NOTES:<br>1. DIMENSIONS AND TOLERANCING PER ANSI<br>K A 2. Y14.5M, 1982.CONTROLLING DIMENSION: INCH.<br>D + 3. 267-04 OBSOLETE, NEW STANDARD 267-05.<br>1 2<br>= INCHES MILLIMETERS<br>DIM MIN MAX MIN MAX<br>A 0.287 0.374 7.30 9.50<br>B [S ibe B 0.189 0.209 4.80 5.30<br>K D 0.047 0.051 1.20 1.30<br>rE] BE K 1.000 --- 25.40 E ---<br>STYLE 1: STYLE 2:<br>PIN 1. CATHODE (POLARITY BAND) NO POLARITY<br>2. ANODE<br>**----- End of picture text -----**<br>


Electronic versions are uncontrolled except when accessed directly from the Document Repository. **DOCUMENT NUMBER: 98ASB42170B** Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. **DESCRIPTION: AXIAL LEAD PAGE 1 OF 1** ~~ee~~ ON Semiconductor and          are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. 

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