1N5402G

## **1N5400G – 1N5408G** Taiwan Semiconductor S ee[@$@$@@@$_@Jp________] 

## **3A, 50V - 1000V Standard Rectifier** 

## FEATURES 

- AEC-Q101 qualified available 

- Glass passivated chip junction 

- High current capability, Low VF 

- High reliability 

- High surge current capability 

- Low power loss, high efficiency 

- RoHS Compliant 

- Halogen-free according to IEC 61249-2-21 

## APPLICATIONS 

- DC to DC converter 

- Switching mode converters and inverters 

|KEY PARAMETERS|KEY PARAMETERS|KEY PARAMETERS|
|---|---|---|
|PARAMETER|VALUE|UNIT|
|IF|3|A|
|VRRM|50 - 1000|V|
|IFSM|125|A|
|TJ MAX|150|°C|
|Package|DO-201AD||
|Configuration|Single die||



## Pd) ROHS HALOGEN — compuant FREE 

- General purpose 

## MECHANICAL DATA 

- Case: DO-201AD 

- Molding compound meets UL 94V-0 flammability rating 

- Terminal: Pure tin plated leads, solderable per J-STD-002 

- Meet JESD 201 class 2 whisker test 

- Polarity: Indicated by cathode band 

- Weight: 1.20g (approximately) 

## **DO-201AD** 

Cathode —_\q— Anode 

|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)<br>~~a~~|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)<br>~~a~~|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)<br>~~a~~|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)<br>~~a~~|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)<br>~~a~~|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)<br>~~a~~|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)<br>~~a~~|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)<br>~~a~~|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)<br>~~a~~|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)<br>~~a~~|
|---|---|---|---|---|---|---|---|---|---|
|PARAMETER<br>~~ee~~|SYMBOL<br>~~ee~~|1N<br>5400G<br>~~ee~~|1N<br>5401G<br>~~ee~~|1N<br>5402G<br>~~ee~~|1N<br>5404G<br>~~ee~~|1N<br>5406G|1N<br>5407G|1N<br>5408G|UNIT|
|Marking code on the<br>device<br>~~ee~~<br>~~ee~~|~~ee~~<br>~~ee~~|1N<br>5400G<br>~~ee~~<br>~~ee~~|1N<br>5401G<br>~~ee~~<br>~~ee~~|1N<br>5402G<br>~~ee~~<br>~~ee~~|1N<br>5404G<br>~~ee~~<br>~~ee~~|1N<br>5406G|1N<br>5407G|1N<br>5408G||
|Repetitive peak reverse<br>voltage<br>~~ee ~~<br>~~ee~~<br>~~a~~|VRRM<br> ~~ee ~~<br>~~ee~~<br>~~ee~~|50<br> ~~ee ~~<br>~~ee~~<br>~~ee~~|100<br> ~~ee ~~<br>~~ee~~<br>~~ee~~|200<br> ~~ee~~<br>~~ee~~<br>~~ee~~|400<br>~~ee~~<br>~~ee~~<br>~~ee~~|600|800|1000|V|
|Reverse voltage, total rms<br>value<br>~~ee ~~<br>~~a~~<br>~~re~~|VR(RMS)<br> ~~ee ~~<br>~~ee~~<br>~~ee~~|35<br> ~~ee ~~<br>~~ee~~<br>~~ee~~|70<br> ~~ee ~~<br>~~ee~~<br>~~ee~~|140<br> ~~ee~~<br>~~ee~~<br>~~ee~~|280<br>~~ee~~<br>~~ee~~<br>~~ee~~|420<br>~~ee~~|560<br>~~ee~~|700<br>~~ee~~|V<br>~~ee~~|
|Forward current<br>~~a~~<br>~~re~~|IF<br>~~ee~~<br>~~ee~~|3<br>~~ee ee~~<br>~~ee~~|||||||A<br>~~ee~~|
|Surge peak forward<br>current, 8.3ms single half<br>sine wave superimposed<br>on ratedload<br>~~re~~|IFSM<br>~~ee~~|125<br>~~ee~~|||||||A<br>~~ee~~|
|Junction temperature<br>~~re~~<br>~~es~~|TJ<br>~~ee~~<br>~~es~~|-55 to +150<br>~~ee~~<br>~~es~~|||||||°C<br>~~ee~~<br>~~es~~|
|Storage temperature<br>~~re~~<br>~~ee~~|TSTG<br>~~ee~~<br>~~ee~~|-55 to +150<br>~~ee~~<br>~~ee~~|||||||°C<br>~~ee~~<br>~~ee~~|



1 Version: K2105 

## **1N5400G – 1N5408G** TAIWANSEMICONDUCTOR(i Taiwan Semiconductor 

## THERMAL PERFORMANCE 

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|||||
|---|---|---|---|
|PARAMETER|SYMBOL|TYP|UNIT|
|Junction-to-ambient thermal resistance|RӨJA|45|°C/W|
|Junction-to-case thermal resistance|RӨJC|15|°C/W|

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ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) 

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|||||||
|---|---|---|---|---|---|
|PARAMETER|CONDITIONS|SYMBOL|TYP|MAX|UNIT|
|1N5400G|
|-|1.1|V|
|1N5401G|
|1N5402G|
|1N5404G|
|Forward voltage|[(1)]|IF = 3A, TJ = 25°C|VF|
|1N5405G|
|-|1.0|V|
|1N5406G|
|1N5407G|
|1N5408G|
|Reverse current @ rated VR(2)|TJ = 25°C|IR|-|5|µA|
|TJ = 125°C|-|100|µA|
|Junction capacitance|1MHz, VR = 4.0V|CJ|25|-|pF|

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**Notes:** 

1. Pulse test with PW = 0.3ms 

2. Pulse test with PW = 30ms 

## ORDERING INFORMATION 

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|||||
|---|---|---|---|
|ORDERING CODE|[(1)(2)]|PACKAGE|PACKING|
|1N54xG|DO-201AD|1,250 / Tape & Reel|
|1N54xG A0G|DO-201AD|500 / Ammo box|
|1N54xGH|DO-201AD|1,250 / Tape & Reel|
|1N54xGHA0G|DO-201AD|500 / Ammo box|

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## **Notes:** 

1. "x" defines voltage from 50V (1N5400G) to 1000V (1N5408G) 

2. “H” means AEC-Q101 qualified 

2 Version: K2105 

5 ——__$_$___________ **1N5400G – 1N5408G** Taiwan Semiconductor 

## CHARACTERISTICS CURVES 

(TA = 25°C unless otherwise noted) 

## **Fig.1 Forward Current Derating Curve** 

## **Fig.2 Typical Junction Capacitance** 

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**----- Start of picture text -----**<br>
100<br>a ee eee eee<br>a<br>10<br>SN as<br>f=1.0MHz<br>Vsig=50mVp-p<br>1 eT1allmall1allmallallmallmall<br>1 10 100<br>REVERSE VOLTAGE (V)<br>CAPACITANCE (pF)<br>**----- End of picture text -----**<br>


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4 100<br>3 a ee eee eee<br>a<br>2 10<br>SN as<br>1<br>f=1.0MHz<br>Vsig=50mVp-p<br>0 1 eT1allmall1allmallallmallmall<br>25 50 75 100 125 150 1 10 100<br>ANBIENT TEMPERATURE (°C)  REVERSE VOLTAGE (V)<br>          Fig.3 Typical Reverse Characteristics       Fig.4 Typical Forward Characteristics<br>10 10<br>1 === TJ=125 ° C 1N5402G-1N5408G  i<br>0.1 a —— 1 ff<br>TJ=75 ° C<br>1N5400G-1N5401G<br>2==48__]= ff<br>0.01 a TP.<br>Pulse width 300μs Pulse width 300μs<br>0.001 SSS a TJ=25 ° C = — 0.1 ffSL 1% duty cycle<br>10 20 30 40 50 60 70 80 90 100 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3<br>PERCENT OF RATED PEAK REVERSE VOLTAGE (%)   FORWARD VOLTAGE (V)<br>CAPACITANCE (pF)<br>AVERAGE FORWARD CURRENT (A)<br>INSTANTANEOUS REVERSE CURRENT (µA)  INSTANTANEOUS FORWARD CURRENT (A)<br>**----- End of picture text -----**<br>


## **Fig.5 Maximum Non-Repetitive Forward Surge Current** 

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150<br>8.3ms single half sine wave<br>125<br>100 SE<br>75<br>|| Peetian EL<br>50<br>A eT<br>25<br>0<br>1 10 100<br>NUMBER OF CYCLES AT 60 Hz<br>PEAK FORWARD SURGE CURRENT (A)<br>**----- End of picture text -----**<br>


3 Version: K2105 

**1N5400G – 1N5408G** Taiwan Semiconductor $5 Eee} A @i @i@iaiai ii 

## Taiwan Semiconductor 

## PACKAGE OUTLINE DIMENSIONS 

## **DO-201AD** 

D—| 

## MARKING DIAGRAM 

P/N = Marking Code G = Green Compound YWW = Date Code F = Factory Code 

4 Version: K2105 

**1N5400G – 1N5408G** TAIWANSEMICONDUCTOR(i 

Taiwan Semiconductor 

## Notice 

Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. 

Purchasers are solely responsible for the choice, selection, and use of TSC products and TSC assumes no liability for application assistance or the design of Purchasers’ products. 

Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. 

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 

5 Version: K2105