# Small Signal Diode, Single, 70 V, 200 mA, 1 V, 4 A ![Product image](https://novapart.co/image/farnell:2453726/) **URL**: https://novapart.co/products/1N457TR/small-signal-diode-single-70-v-200-ma-1-4-a **SKU**: 1N457TR **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || Diodes & Rectifiers || Small Signal Diodes **Price**: €0.0230 **Stock**: 10+ ## Description Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:70V; Forward Current If(AV):200mA; Forward Voltage VF Max:1V; Reverse Recovery Time trr Max:-; Forward Surge Current Ifs ## Specifications | Parameter | Value | |---|---| | Svhc | No SVHC (25-Jun-2025) | | No. Of Pins | 2Pins | | Product Range | 1N457T | | Qualification | - | | Diode Mounting | Through Hole | | Diode Case Style | DO-204AH | | Diode Configuration | Single | | Forward Voltage Max | 1V | | Forward Surge Current | 4A | | Reverse Recovery Time | - | | Average Forward Current | 200mA | | Operating Temperature Max | 175°C | | Repetitive Peak Reverse Voltage | 70V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:2453726/) ## **1N457/A** **DO-35** Color Band Denotes Cathode ## **Small Signal Diode** ## **Absolute Maximum Rating** TA = 25°C unless otherwise noted |**Absolute Maximum Ratinggs***TA = 25°C unless otherwise notedA = 25°C unless otherwise noted= 25°C unless otherwise noted|| |---|---| |**Parameter**|**Value**| |Maximum Repetitive Reverse Voltage|70| |Average Rectified Forward Current|200| |Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 second
PulseWidth = 1.0microsecond|1.0
4.0| |Storage Temperature Range|-65 to +200| |Operating Junction Temperature|175| - *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. **NOTES** : - **1)** These ratings are based on a maximum junction temperature of 200 degrees C. - **2)** These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. ## **Thermal Characteristics** |**Thermal Characteristics**|| |---|---| |**Parameter**|**Value**| |Power Dissipation|500| |Thermal Resistance, Junction to Ambient|300| ## **Electrical Characteristics** TA = 25°C unless otherwise noted |**Parameter**|**Test Conditions**|**Min**|**Max**| |---|---|---|---| |Breakdown Voltage|IR= 100µA|70|| |Forward Voltage **1N457**
**1N457A**|IF= 20 mA
IF =100 mA||1.0
1.0| |Reverse Current|VR= 60 V
VR =60 V, TA =150°C||25
5| |Total Capacitance**1N457**|VR= 0, f = 1.0 MHz||8.0| 1N457/A, Rev. A 2002 Fairchild Semiconductor Corporation **==> picture [440 x 639] intentionally omitted <==** **----- Start of picture text -----**
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Definition of Terms
Advance Information Formative or This datasheet contains the design specifications for
In Design product development. Specifications may change in
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Rev. H5
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