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1N4448HLP-7
Small Signal Diode, Single, 80 V, 95 mA, 1.25 V, 4 ns, 2 A
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: DIODES INC.
- Product type: Small Signal Diodes
- Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:80V; Forward Current If(AV):95mA; Forward Voltage VF Max:1.25V; Reverse Recovery Time trr Max:4ns; Forward Surge Curr
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 2Pins
- Product Range: 1N4448
- Qualification: -
- Diode Mounting: Surface Mount
- Diode Case Style: X1-DFN1006
- Diode Configuration: Single
- Forward Voltage Max: 1.25V
- Forward Surge Current: 2A
- Reverse Recovery Time: 4ns
- Average Forward Current: 95mA
- Operating Temperature Max: 150°C
- Repetitive Peak Reverse Voltage: 80V
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.132 € |
| Current stock | 1000+ |
| Lead time | 30 days |
**1N4448HLP SURFACE MOUNT FAST SWITCHING DIODE** |
## **Features**
## **Mechanical Data**
- Fast Switching Speed
- Ultra-Small Surface Mount Package
- Low Reverse Leakage Current
- Ideal for Battery Powered Portable Applications
- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)**
- **Halogen and Antimony Free. “Green” Device (Note 3)**
- Case: X1-DFN1006-2
- Case Material: Molded Plastic, "Green" Molding Compound; UL Flammability Classification Rating 94V-0
- Moisture Sensitivity: Level 1 per J-STD-020
- Terminal Connections: See Marking Information
- Terminals: Finish - NiPdAu over Copper Leadframe; Solderable per MIL-STD-202, Method 208 **e4**
- Weight: 0.001 grams (Approximate)
X1-DFN1006-2
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Bottom View
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Device Schematic<br>**----- End of picture text -----**<br>
## **Ordering Information** (Note 4)
||||
|---|---|---|
|**Part Number**|**Case**|**Packaging**|
|1N4448HLP-7|X1-DFN1006-2|3,000/Tape & Reel|
|1N4448HLP-7B|X1-DFN1006-2|10,000/Tape &Reel|
- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimonyfree, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
## **Marking Information** (Note 5)
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1N4448HLP-7 1N4448HLP-7B<br>T8 T8<br>T8 = Product Type Marking Code<br>||<br>Top View Top View<br>Dot Denotes Bar Denotes<br>Cathode Side Cathode Side<br>T8<br>im<br>Top View<br>Bar Denotes<br>Cathode Side<br>**----- End of picture text -----**<br>
Note: 5. From date code 1527 (YYWW), dot marking was changed to bar marking for 1N4448HLP-7.
1 of 5 **www.diodes.com**
1N4448HLP Document number: DS30590 Rev. 14 - 2
August 2015 © Diodes Incorporated
**1N4448HLP**
## **Maximum Ratings** (@TA = +25°C unless otherwise specified.)
|**Maximum Ratingsgss** (@TA = +25°C unless otherwise specified.)A = +25°C unless otherwise specified.)= +25°C unless otherwise specified.)|(@TA = +25°C unless otherwise specified.)A = +25°C unless otherwise specified.)= +25°C unless otherwise specified.)|||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Non-Repetitive Peak Reverse Voltage|VRM|100|V|
|Peak Repetitive Reverse Voltage<br>Working Peak Reverse Voltage<br>DC Blocking Voltage|VRRM<br>VRWM<br>VR|80|V|
|RMS Reverse Voltage|VR(RMS)|57|V|
|Forward Continuous Current|IFM|300|mA|
|Average Rectified Output Current|IO|95|mA|
|Non-Repetitive Peak Forward Surge Current<br>@ t = 1.0µs<br>@t = 1.0s|IFSM|2.0<br>1.0|A|
## **Thermal Characteristics**
|**Thermal Characteristics**||||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Power Dissipation(Note 6)|PD|250|mW|
|Thermal Resistance Junction to Ambient(Note 6)|RJA|500|°C/W|
|Operatingand Storage Temperature Range|TJ,TSTG|-65 to +150|°C|
## **Electrical Characteristics** @TA = 25°C unless otherwise specified
|**Electrical Characteristics **@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified||||
|---|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Max**|**Unit**|**Test Conditions**|
|Reverse Breakdown Voltage(Note 7)|V(BR)R|80||V|IR= 100A|
|Forward Voltage|VF|0.62<br><br><br>|0.72<br>0.855<br>1.0<br>1.25|V|IF= 5.0mA<br>IF= 10mA<br>IF= 100mA<br>IF= 150mA|
|Peak Reverse Current (Note 7)|IR||100<br>50<br>30<br>25|nA<br>µA<br>µA<br>nA|VR= 80V<br>VR= 75V, TJ= +150°C<br>VR= 25V, TJ= +150°C<br>VR= 20V|
|Total Capacitance|CT||3.0|pF|VR= 0.5V,f = 1.0MHz|
|Reverse Recovery Time|trr||4.0|ns|IF= IR= 10mA,<br>Irr= 0.1 x IR,RL= 100Ω|
Notes: 6. Part mounted on FR-4 PC board with recommended pad layout, which can be found on our website at http://www.diodes.com.
7. Short duration pulse test used to minimize self-heating effect.
2 of 5 **www.diodes.com**
1N4448HLP Document number: DS30590 Rev. 14 - 2
August 2015 © Diodes Incorporated
**1N4448HLP**
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300 1,000 SS SS SS SS SS<br>_——a CO CO CO<br>a<br>250 Note 6 100 ene EGE<br>— a ee ee oe ee<br>a a A) A A AY, A<br>200 10 a reLf<br>150 | — 9K, [7 fJ\_/ | f/f Ff | J}<br>pe NearerVf ffA TT<br>100 a A Ay A A A —<br>o n Lf f fA fe oe |_|<br>50<br>0 o n AGAAZ 41 4 aie/| / | | |<br>0 0.1 0.2 0.3 04 0 506 07 08 0 9 1 1.1<br>0 25 50 75 100 125 150<br>TA, AMBIENT TEMPERATURE (°C) VF, INSTANTANEOUS FORWARD VOLTAGE (V)<br>Fig. 1 Power Derating Curve Fig. 2 Typical Forward Characteristics<br>100,000 100,000<br>_——— a ee ee ae ee ee ee<br>i ee er rr SS a GOO<br>10,000 ee T TA A = 150°C = 125°C 10,000 —_——————————— TA = 150°C CO<br>1,000 aeoo eee T TAA = 85 = 100 °C °C eee 1,000 |eee ee TTAA = 125°C = 100°C<br>TA = 85°C<br>100 eea ee ee eee 100 eea ee eeee<br>TA = 50°C<br>a OG OG a T A = 50°C<br>10 _——a eerree T ee A = 25°C ee 10 |ee| {| {| {| {| {| {| {| { |<br>TA = 25°C<br>————— —— a<br>1 T A = 0°C 1<br>TA = -55°C TA = 0°C<br>Ge[foSS SSSa a eySS |<br>0.1 0.1 TA = -55°C<br>0.01 f | ft hE 0.01 | [| -[ [| | {| {| f{[ f[ J[ |<br>0 10 20 30 40 50 60 70 80 90 100 0 1 2 3 4 5<br>VR, INSTANTANEOUS REVERSE VOLTAGE (V) VR, INSTANTANEOUS REVERSE VOLTAGE (V)<br>Fig. 3 Typical Reverse Characteristics Fig. 4 Typical Reverse Characteristics - Low Bias<br>0.5 2.5<br>0.4 2.0<br>0.3 1.5 |<br>0.2 1.0<br>0.1 f = 1MHz 0.5<br>0 0<br>1 10 100 0 2 4 6 8 10<br>VR, DC REVERSE VOLTAGE (V) IF, FORWARD CURRENT (mA)<br>Fig. 5 Typical Total Capacitance vs. Reverse Voltage Fig. 6 Typical Reverse Recovery Time vs. Forward Current<br>D<br>, POWER DISSIPATION (mW)<br>P<br>, INSTANTANEOUS REVERSE CURRENT (nA)<br>IR<br>, TOTAL CAPACITANCE (pF)<br>C<br>T<br>, INSTANTANEOUS FORWARD CURRENT (mA)<br>IF<br>, INSTANTANEOUS REVERSE CURRENT (nA)<br>IR<br>, REVERSE RECOVERY TIME (nS)<br>trr<br>**----- End of picture text -----**<br>
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1N4448HLP Document number: DS30590 Rev. 14 - 2
August 2015 © Diodes Incorporated
**1N4448HLP**
## **Package Outline Dimensions**
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
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A<br>no A1<br>D<br>E b<br>an L e<br>R<br>**----- End of picture text -----**<br>
|**X1-DFN1006-2**|**X1-DFN1006-2**|**X1-DFN1006-2**|**X1-DFN1006-2**|
|---|---|---|---|
|**Dim**|**Min**|**Max **|**Typ**|
|**A**|0.47|0.53|0.50|
|**A1**|0|0.05|0.03|
|**b**|0.45|0.55|0.50|
|**D**|0.95|1.075|1.00|
|**E**|0.55|0.675|0.60|
|**e**|-|-|0.40|
|**L**|0.20|0.30|0.25|
|**R**|0.05|0.15|0.10|
|**All Dimensions in mm**||||
## **Suggested Pad Layout**
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
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X1<br>X<br>a<br>Y<br>inae<br>G<br>C<br>**----- End of picture text -----**<br>
|**Dimensions**|**Value(in mm)**|
|---|---|
|**C**|0.70|
|**G**|0.30|
|**X**|0.40|
|**X1**|1.10|
|**Y**|0.70|
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1N4448HLP Document number: DS30590 Rev. 14 - 2
August 2015 © Diodes Incorporated
**1N4448HLP**
## **IMPORTANT NOTICE**
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated.
## **LIFE SUPPORT**
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
- A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2015, Diodes Incorporated
**www.diodes.com**
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1N4448HLP Document number: DS30590 Rev. 14 - 2
August 2015 © Diodes Incorporated
Updated at April 27, 2026
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