1N4151TR

**1N4151** 

~~—~~ www.vishay.com 

Vishay Semiconductors 

## **Small Signal Fast Switching Diodes** 

## **FEATURES** 

- Silicon epitaxial planar diode 

- AEC-Q101 qualified 

- Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 

## **APPLICATIONS** 

- Extreme fast switches 

## **MECHANICAL DATA** 

**Case:** DO-35 

**Weight:** approx. 125 mg 

**Cathode band color:** black 

## **Packaging codes/options:** 

TR/10K per 13" reel (52 mm tape), 50K/box 

TAP/10K per ammopack (52 mm tape), 50K/box 

|**PARTS TABLE**|**PARTS TABLE**|**PARTS TABLE**|**PARTS TABLE**|**PARTS TABLE**|
|---|---|---|---|---|
|**PART**|**ORDERING CODE**|**TYPE MARKING**|**INTERNAL CONSTRUCTION**|**REMARKS**|
|1N4151|1N4151TR or 1N4151TAP|1N4151|Single diode|Tape and reel/ammopack|



|**ABSOLUTE MAXIMUM RATINGS**(Tamb= 25 °C,unless otherwise specified)|**ABSOLUTE MAXIMUM RATINGS**(Tamb= 25 °C,unless otherwise specified)|**ABSOLUTE MAXIMUM RATINGS**(Tamb= 25 °C,unless otherwise specified)|**ABSOLUTE MAXIMUM RATINGS**(Tamb= 25 °C,unless otherwise specified)|**ABSOLUTE MAXIMUM RATINGS**(Tamb= 25 °C,unless otherwise specified)|
|---|---|---|---|---|
|**PARAMETER**|**TEST CONDITION**|**SYMBOL**|**VALUE**|**UNIT**|
|Repetitive peak reverse voltage||VRRM|75|V|
|Reverse voltage||VR|50|V|
|Peak forward surge current|tp= 1 μs|IFSM|2|A|
|Repetitive peak forward current||IFRM|500|mA|
|Forward continuous current||IF|300|mA|
|Average forward current|VR= 0|IF(AV)|150|mA|
|Power dissipation|l = 4 mm, TL= 45 °C|Ptot|440|mW|
||l = 4 mm, TL 25 °C|Ptot|500|mW|



|**THERMAL CHARACTERISTICS**(Tamb= 25 °C,unless otherwise specified)|**THERMAL CHARACTERISTICS**(Tamb= 25 °C,unless otherwise specified)|**THERMAL CHARACTERISTICS**(Tamb= 25 °C,unless otherwise specified)|**THERMAL CHARACTERISTICS**(Tamb= 25 °C,unless otherwise specified)|**THERMAL CHARACTERISTICS**(Tamb= 25 °C,unless otherwise specified)|
|---|---|---|---|---|
|**PARAMETER**|**TEST CONDITION**|**SYMBOL**|**VALUE**|**UNIT**|
|Thermal resistance junction to ambient air|l = 4 mm, TL= constant|RthJA|350|K/W|
|Junction temperature||Tj|175|°C|
|Storage temperature range||Tstg|- 65 to  + 175|°C|



Rev. 1.8, 06-Dec-13 

Document Number: 85523 

**1** 

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**1N4151** 

Vishay Semiconductors 

**==> picture [59 x 48] intentionally omitted <==**

www.vishay.com 

|**ELECTRICAL CHARACTERISTICS**(Tamb= 25 °C,unless otherwise specified)|**ELECTRICAL CHARACTERISTICS**(Tamb= 25 °C,unless otherwise specified)|**ELECTRICAL CHARACTERISTICS**(Tamb= 25 °C,unless otherwise specified)|**ELECTRICAL CHARACTERISTICS**(Tamb= 25 °C,unless otherwise specified)|**ELECTRICAL CHARACTERISTICS**(Tamb= 25 °C,unless otherwise specified)|**ELECTRICAL CHARACTERISTICS**(Tamb= 25 °C,unless otherwise specified)|**ELECTRICAL CHARACTERISTICS**(Tamb= 25 °C,unless otherwise specified)|
|---|---|---|---|---|---|---|
|**PARAMETER**|**TEST CONDITION**|**SYMBOL**|**MIN.**|**TYP.**|**MAX.**|**UNIT**|
|Forward voltage|IF= 50 mA|VF||0.880|1|V|
|Reverse current|VR= 50 V|IR||14|50|nA|
||VR= 50 V, Tj= 150 °C|IR|||50|μA|
|Breakdown voltage|IR= 5 μA|V(BR)|75|||V|
|Diode capacitance|VR= 0 V, f = 1 MHz,<br>VHF= 50 mV|CD|||2|pF|
|Reverse recovery time|IF= IR= 10 mA,<br>iR= 1 mA|trr|||4|ns|
||IF= 10 mA, VR= 6 V,<br>iR= 0.1 x IR, RL= 100|trr|||2|ns|



## **TYPICAL CHARACTERISTICS** (Tamb = 25 °C, unless otherwise specified) 

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**----- Start of picture text -----**<br>
100<br>Scattering Limit<br>10<br>1<br>0.1<br>VR = 50 V<br>0.01<br>0 40 80 120 160 200<br>94 9151 Tj - Junction Temperature (°C)<br> Fig. 1 - Reverse Current vs. Junction TemperatureReverse Current vs. Junction Temperature<br>1000<br>T j = 100 °C<br>100<br>10<br>T j = 25 °C<br>1<br>0.1<br>0 0.4 0.8 1.2 1.6 2.0<br>94 9152 VF - Forward Voltage (V)<br>- Reverse Current (µA)<br>IR<br>- Forward Current (mA)<br>IF<br>**----- End of picture text -----**<br>


Fig. 1 - Reverse Current vs. Junction TemperatureReverse Current vs. Junction Temperature 

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**----- Start of picture text -----**<br>
3.0<br>2.5<br>f = 1 MHz<br>T = 25 °C<br>2.0 j<br>1.5<br>1.0<br>0.5<br>0<br>0.1 1 10 100<br>94 9153 VR - Reverse Voltage (V)<br>- Diode Capacitance (pF)<br>D<br>C<br>**----- End of picture text -----**<br>


Fig. 3 - Diode Capacitance vs. Reverse Voltage 

Fig. 2 - Forward Current vs. Forward Voltage 

Rev. 1.8, 06-Dec-13 

Document Number: 85523 

**2** 

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**1N4151** 

Vishay Semiconductors 

**==> picture [59 x 48] intentionally omitted <==**

www.vishay.com 

## **PACKAGE DIMENSIONS** in millimeters (inches): **DO-35** 

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**----- Start of picture text -----**<br>
Cathode Identification<br>26 min. [1.024] 3.9 max. [0.154] 26 min. [1.024]<br>3.1 min. [0.120] 1.7 [0.067] 1.3 [0.050]<br>Ø 0.6 max. [0.024] Ø 0.4 min. [0.015]<br>**----- End of picture text -----**<br>


Rev. 6 - Date: 19. December 2011 Document no.: SB-V-3906.04-031(4) 94 9366 

Rev. 1.8, 06-Dec-13 

Document Number: 85523 

**3** 

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**Legal Disclaimer Notice** Vishay 

www.vishay.com 

**==> picture [59 x 48] intentionally omitted <==**

## **Disclaimer** 

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 

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Revision: 13-Jun-16 

Document Number: 91000 

**1**