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1N4148TA
Small Signal Diode, Single, 100 V, 200 mA, 1 V, 4 ns, 4 A
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: ONSEMI
- Product type: Small Signal Diodes
- Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:100V; Forward Current If(AV):200mA; Forward Voltage VF Max:1V; Reverse Recovery Time trr Max:4ns; Forward Surge Cur
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 2Pins
- Product Range: 1N4148
- Qualification: -
- Diode Mounting: Through Hole
- Diode Case Style: DO-204AH
- Diode Configuration: Single
- Forward Voltage Max: 1V
- Forward Surge Current: 4A
- Reverse Recovery Time: 4ns
- Average Forward Current: 200mA
- Operating Temperature Max: 175°C
- Repetitive Peak Reverse Voltage: 100V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 0.013 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
**DATA SHEET www.onsemi.com** ~~oe~~
## Small Signal Diode
## 1N91x, 1N4x48, FDLL914, FDLL4x48
**DO−35 Cathode is denoted with a black band**
## **ORDERING INFORMATION**
|~~ee~~|~~es~~|~~ee~~||
|---|---|---|---|
|**Part Number**<br>~~ee~~<br>~~ee~~|**Marking**<br>~~es~~<br>~~es~~|**Package**<br>~~ee~~<br>~~ee~~|**Packing Method**|
|1N914<br>~~ee~~<br>~~ee~~<br>~~ee~~|914<br>~~es~~<br>~~es~~<br>~~es~~|DO−204AH (DO−35)<br>~~ee~~<br>~~ee~~<br>~~ee~~|Bulk|
|1N914−T50A<br>~~ee~~<br>~~ee~~<br>~~ee~~|914<br>~~es~~<br>~~es~~<br>~~es~~|DO−204AH (DO−35)<br>~~ee~~<br>~~ee~~<br>~~ee~~|Ammo|
|1N914TR<br>~~ee~~<br>~~ee~~<br>~~ee~~|914<br>~~es~~<br>~~es~~<br>~~ee~~|DO−204AH (DO−35)<br>~~ee~~<br>~~ee~~<br>~~es~~|Tape and Reel|
|1N914ATR<br>~~ee~~<br>~~ee~~|914A<br>~~es~~<br>~~ee~~<br>~~es~~|DO−204AH (DO−35)<br>~~ee~~<br>~~es~~<br>~~en~~|Tape and Reel|
|1N914B<br>~~ee~~<br>~~es~~|914B<br>~~ee~~<br>~~es~~<br>~~es~~<br>~~es~~|DO−204AH (DO−35)<br>~~es~~<br>~~es~~<br>~~en~~<br>~~ee~~|Bulk<br>~~es~~|
|1N914BTR<br>~~es~~<br>~~ee~~|914B<br>~~es ~~<br>~~es~~<br>~~es~~<br>~~ee~~|DO−204AH (DO−35)<br> ~~en~~<br>~~es~~<br>~~ee~~<br>~~ee~~|Tape and Reel<br>~~es~~<br>~~ee~~|
|1N916<br>~~ee~~<br>~~ee~~|916<br>~~es ~~<br>~~ee~~<br>~~es~~|DO−204AH (DO−35)<br> ~~ee~~<br>~~ee~~<br>~~ee~~|Bulk<br>~~ee~~|
|1N916A<br>~~ee~~<br>~~ee~~<br>~~a~~|916A<br>~~ee~~<br>~~es~~<br>~~es~~|DO−204AH (DO−35)<br>~~ee~~<br>~~ee~~<br>~~ee~~|Bulk<br>~~ee~~|
|1N916B<br>~~ee~~<br>~~a~~<br>~~ee~~|916B<br>~~es ~~<br>~~es~~<br>~~ee~~|DO−204AH (DO−35)<br> ~~ee~~<br>~~ee~~<br>~~ee~~|Bulk<br>~~ee~~|
|1N4148<br>~~a~~<br>~~ee~~|4148<br>~~es~~<br>~~ee~~|DO−204AH (DO−35)<br>~~ee~~<br>~~ee~~|Bulk<br>~~ee~~|
|1N4148TA<br>~~ee~~<br>~~ee~~<br>~~ee~~|4148<br>~~ee~~<br>~~ee~~<br>~~es~~<br>|DO−204AH (DO−35)<br>~~ee~~<br>~~ee~~<br>~~ee~~|Ammo<br>~~ee~~<br>~~ee~~|
|1N4148−T26A<br>~~ee~~<br>~~es~~<br>~~ee~~<br>~~ee~~|4148<br>~~ee~~<br>~~es~~<br>~~es~~<br>~~es~~<br>|DO−204AH (DO−35)<br>~~ee~~<br>~~es~~<br>~~ee~~<br>~~ee~~|Ammo<br>~~ee~~<br>~~es~~|
|1N4148−T50A<br>~~ee~~<br>~~ee~~<br>~~ee~~|4148<br>~~es~~<br>~~es~~<br>~~es~~<br>|DO−204AH (DO−35)<br>~~ee~~<br>~~ee~~<br>~~ee~~|Ammo|
|1N4148TR<br>~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~a~~|4148<br>~~es~~<br> ~~es~~<br>~~es~~<br>~~es~~|DO−204AH (DO−35)<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|Tape and Reel|
|1N4148−T50R<br> <br>~~ee ~~<br>~~ee~~<br>~~a~~<br>~~ee~~|4148<br> ~~es~~<br> ~~es~~<br>~~es~~<br>~~ee~~|DO−204AH (DO−35)<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|Tape and Reel|
|1N4448<br> <br>~~ee ~~<br>~~a~~<br>~~ee~~|4448<br> ~~es~~<br> ~~es~~<br>~~ee~~<br>~~es~~|DO−204AH (DO−35)<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|Bulk<br>~~ee~~|
|1N4448TR<br>~~ee~~|4448<br>~~ee~~<br>~~es~~<br>~~es~~|DO−204AH (DO−35)<br>~~ee~~<br>~~ee~~<br>~~ee~~|Tape and Reel<br>~~ee~~|
|FDLL914<br>~~ee~~<br>~~es~~<br>~~ee~~|Black<br>~~ee~~<br>~~es~~<br>~~es~~<br>~~es~~<br>~~**es**~~|SOD−80<br>~~ee~~<br>~~ee~~<br>~~es~~<br>~~ee~~<br>~~ee~~|Tape and Reel<br>~~ee~~<br>~~es~~|
|FDLL914A<br>~~es~~<br>~~ee~~|Black<br>~~es ~~<br>~~es~~<br>~~**es**~~|SOD−80<br> ~~ee~~<br>~~es~~<br>~~ee~~<br>~~ee~~|Tape and Reel<br>~~es~~|
|FDLL914B<br>~~ee~~<br>~~ee~~|Black<br>~~**es**~~<br>~~es ee~~<br>|SOD−80<br>~~ee~~<br>~~ee~~<br>~~ee~~|Tape and Reel|
|FDLL4148<br>~~ee~~<br>~~es~~<br>~~ee~~<br>~~ee~~|Black<br>~~**es**~~<br>~~es~~<br>~~es ee~~<br>~~es~~<br>|SOD−80<br>~~ee~~<br>~~ee~~<br>~~es~~<br>~~ee~~<br>~~ee~~|Tape and Reel<br>~~es~~|
|FDLL4148−D87Z<br>~~ee~~<br>~~ee~~<br>~~ee~~|Black<br>~~es ee~~<br>~~es~~<br>~~**e**s~~|SOD−80<br>~~ee~~<br>~~ee~~<br>~~ee~~|Tape and Reel|
|FDLL4448<br>~~ee ~~<br>~~ee~~<br>~~ee~~|Black<br>~~es ee~~<br> ~~es~~<br>~~**e**s~~<br>~~e~~|SOD−80<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~en~~|Tape and Reel<br>~~en~~|
|FDLL4448−D87Z<br> <br>~~ee ~~<br>~~ee~~|Black<br> ~~es~~<br> ~~**e**s~~<br>~~e~~|SOD−80<br>~~ee~~<br>~~ee~~<br>~~en~~|Tape and Reel<br>~~en~~|
**==> picture [112 x 94] intentionally omitted <==**
**----- Start of picture text -----**<br>
Cathode Band<br>a<br>SOD80<br>LL−34<br>THE PLACEMENT OF THE EXPANSION GAP<br>HAS NO RELATIONSHIP TO THE LOCATION<br>OF THE CATHODE TERMINAL<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
SOD−80 COLOR BAND MARKING<br>DEVICE 1ST BAND<br>FDLL914 BLACK<br>FDLL914A BLACK<br>FDLL914B BLACK<br>FDLL4148 BLACK<br>FDLL4448 BLACK<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
-1st band denotes cathode terminal<br> and has wider width<br>**----- End of picture text -----**<br>
Publication Order Number:
**1**
© Semiconductor Components Industries, LLC, 2002 **August, 2021 − Rev. 5**
**1N914/D**
## **1N91x, 1N4x48, FDLL914, FDLL4x48**
**ABSOLUTE MAXIMUM RATINGS** (Values are at TA = 25 ° C unless otherwise noted) (Note 1)
|**ABSOLUTE MAXIMUM RATINGS**(Values are at TA= 25°C unless otherwise noted) (Not|e 1)|||
|---|---|---|---|
|**Rating**|**Symbol**|**Value**|**Unit**|
|Maximum Repetitive Reverse Voltage|VRRM|100|V|
|Average Rectified Forward Current|IO|200|mA|
|DC Forward Current|IF|300|mA|
|Recurrent Peak Forward Current|If|400|mA|
|Non−repetitive Peak Forward Surge Current<br>Pulse Width = 1.0 s<br>Pulse Width = 1.0�s|IFSM|1.0|A|
|||4.0|A|
|Storage Temperature Range|TSTG|−65 to +200|°C|
|Operating Junction Temperature Range|TJ|−55 to +175|°C|
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
1. These ratings are limiting values above which the serviceability of the diode may be impaired.
## **THERMAL CHARACTERISTICS**
|**THERMAL CHARACTERISTICS**||||
|---|---|---|---|
|**Parameter**|**Symbol**|**Max**|**Unit**|
|Power Dissipation|PD|500|mW|
|Thermal Resistance, Junction−to−Ambient|R�JA|300|°C|
**ELECTRICAL CHARACTERISTICS** (Values are at TA = 25 ° C unless otherwise noted) (Note 2)
|**ELECTRIC**|**AL CHARACTERISTICS**(Values are at TA|**AL CHARACTERISTICS**(Values are at TA|= 25°C unless otherwise noted) (No|te 2)|||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**||**Conditions**|**Min**|**Max**|**Unit**|
|VR|Breakdown Voltage||IR= 100�A|100||V|
||||IR= 5.0�A|75||V|
|VF|Forward Voltage|914B / 4448|IF= 5.0 mA|0.62|0.72|V|
|||916B|IF= 5.0 mA|0.63|0.73|V|
|||914 / 916 / 4148|IF= 10 mA||1.0|V|
|||914A / 916A|IF= 20 mA||1.0|V|
|||916B|IF= 20 mA||1.0|V|
|||914B / 4448|IF= 100 mA||1.0|V|
|IR|Reverse Leakage||VR= 20 V||0.025|�A|
||||VR= 20 V, TA= 150°C||50|�A|
||||VR= 75 V||5.0|�A|
|CT|Total Capacitance|916/916A/916B/4448|VR= 0, f = 1.0 MHz||2.0|pF|
|||914/914A/914B/4148|VR= 0, f = 1.0 MHz||4.0|pF|
|trr|Reverse Recovery Time||IF= 10 mA, VR= 6.0 V (600 mA)<br>Irr= 1.0 mA, RL= 100�||4.0|ns|
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Non−recurrent square wave PW = 8.3 ms.
**www.onsemi.com**
**2**
**1N91x, 1N4x48, FDLL914, FDLL4x48**
## **TYPICAL PERFORMANCE CHARACTERISTICS**
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**----- Start of picture text -----**<br>
160 Ta=25 oC<br>150<br>140<br>130<br>120<br>110<br>1 2 3 5 10 20 30 50 100<br>Reverse Current, I R [uA]<br>Figure 1. Reverse Voltage vs. Reverse Current<br>BV − 1.0 to 100 V − 1.0 to 100 − 1.0 to 100 � A<br>550<br>Ta= 25 o C<br>500<br>450<br>400<br>350<br>300<br>250<br>1 2 3 5 10 20 30 50 100<br>Forward Current, I F [uA]<br> [V]<br> R<br>Reverse Voltage, V<br> [mV]<br>Forward Voltage, V R<br>**----- End of picture text -----**<br>
**Figure 1. Reverse Voltage vs. Reverse Current BV − 1.0 to 100 V − 1.0 to 100 − 1.0 to 100 � A**
**Figure 3. Forward Voltage vs. Forward Current VF − 1 to 100 � A**
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**----- Start of picture text -----**<br>
120<br>Ta= 25 o C<br>100<br>80<br>60<br>40<br>20<br>0<br>10 20 30 50 70 100<br>Reverse Voltage, VR [V]<br>GENERAL RULE: The Reverse Current of a diode will approximately<br> double for every ten (10) Degree C increase in Temperature<br> [nA]<br> R<br>Reverse Current, I<br>**----- End of picture text -----**<br>
**Figure 2. Reverse Current vs. Reverse Voltage IR − 10 to 100 V**
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**----- Start of picture text -----**<br>
750<br>Ta= 25 o C<br>700<br>650<br>600<br>550<br>500<br>450<br>0.1 0.2 0.3 0.5 1 2 3 5 10<br>Forward Current, I F [mA]<br> [mV]<br>Forward Voltage, V F<br>**----- End of picture text -----**<br>
**Figure 4. Forward Voltage vs. Forward Current VF − 0.1 to 10 mA**
**==> picture [185 x 137] intentionally omitted <==**
**----- Start of picture text -----**<br>
1.6<br>Ta= 25 oC<br>1.4<br>1.2<br>1.0<br>0.8<br>0.6<br>10 20 30 50 100 200 300 500 800<br>Forward Current, I F [mA]<br> [mV]<br>Forward Voltage, V F<br>**----- End of picture text -----**<br>
**Figure 5. Forward Voltage vs. Forward Current VF − 10 to 800 mA**
**==> picture [181 x 142] intentionally omitted <==**
**----- Start of picture text -----**<br>
900<br>Typical<br>800<br>Ta= −40 o C<br>700<br>600 Ta= 25oC<br>500 Ta= +65 o C<br>400<br>300<br>0.01 0.03 0.1 0.3 1 3 10<br>Forward Current, IF [mA]<br> [mV]<br>Forward Voltage, V F<br>**----- End of picture text -----**<br>
**Figure 6. Forward Voltage vs. Ambient Temperature VF - 0.01 - 20 mA (- 40 to +65** ° **C)**
**www.onsemi.com**
**3**
**1N91x, 1N4x48, FDLL914, FDLL4x48**
## **TYPICAL PERFORMANCE CHARACTERISTICS**
**==> picture [185 x 342] intentionally omitted <==**
**----- Start of picture text -----**<br>
0.90<br>TA = 25 oC<br>0.85<br>0.80<br>0.75<br>0 2 4 6 8 10 12 14<br>REVERSE VOLTAGE (V)<br>Figure 7. Total Capacitance<br>500<br>400<br>300<br>I F(AV) − Average Rectified Current − mA<br>200<br>100<br>0<br>0 50 100 150<br>Ambient Temperature ( [o] C)<br>Total Capacitance (pF)<br>Current (mA)<br>**----- End of picture text -----**<br>
**Figure 9. Average Rectified Current (IF(AV)) vs. Ambient Temperature (TA)**
**==> picture [182 x 146] intentionally omitted <==**
**----- Start of picture text -----**<br>
4.0<br>Ta = 25 oC<br>3.5<br>3.0<br>2.5<br>2.0<br>1.5<br>1.0<br>10 20 30 40 50 60<br>Reverse Recovery Current, I rr [mA]<br>IF = 10mA , IRR = 1.0 mA , Rloop = 100 Ohms<br> [ns]<br> rr<br>Reverse Recovery Time, t<br>**----- End of picture text -----**<br>
**Figure 8. Reverse Recovery Time vs. Reverse Recovery Current**
**==> picture [186 x 141] intentionally omitted <==**
**----- Start of picture text -----**<br>
500<br>400<br>DO−35 and LL−34 / SOD−80<br>300<br>200<br>100<br>0<br>0 50 100 150 200<br>Temperature ( oC)<br>[mW]<br>Power Dissipation, PD<br>**----- End of picture text -----**<br>
**Figure 10. Power Derating Curve**
**www.onsemi.com**
**4**
MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS**
**==> picture [490 x 668] intentionally omitted <==**
**----- Start of picture text -----**<br>
AXIAL LEAD<br>CASE 017AG<br>ISSUE O<br>DATE 31 AUG 2016<br>T50 = 25.40 MIN (2X)<br>T26 = 14.00 MIN (2X)<br>4.56<br>3.05<br>H P<br>0.533<br>0.460 NOTES: UNLESS OTHERWISE SPECIFIED<br> A) PACKAGE STANDARD REFERENCE:<br>JEDEC DO−204, VARIATION AH.<br> B) HERMETICALLY SEALED GLASS PACKAGE.<br> C) PACKAGE WEIGHT IS 0.137 GRAM.<br> D) ALL DIMENSIONS ARE IN MILLIMETERS.<br>| |<br>1.91<br>|<br>1.53<br>Electronic versions are uncontrolled except when accessed directly from the Document Repository.<br>DOCUMENT NUMBER: 98AON13443G Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.<br>DESCRIPTION: AXIAL LEAD PAGE 1 OF 1<br>—<br>ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.<br>ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding<br>the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically<br>disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the<br>rights of others.<br>**----- End of picture text -----**<br>
www.onsemi.com
© Semiconductor Components Industries, LLC, 2019
MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS**
**MiniMELF / SOD−80** CASE 100AD ISSUE O
DATE 30 APR 2012
|**DOCUMENT NUMBER:**|**98AON79582E**|
|---|---|
|**DESCRIPTION:**|**MINIMELF / SOD−80**|
Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
**PAGE 1 OF 1**
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others.
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© Semiconductor Components Industries, LLC, 2019
**onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi** ’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and **onsemi** makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use **onsemi** products for any such unintended or unauthorized application, Buyer shall indemnify and hold **onsemi** and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that **onsemi** was negligent regarding the design or manufacture of the part. **onsemi** is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
## **PUBLICATION ORDERING INFORMATION**
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**==> picture [232 x 43] intentionally omitted <==**
Updated at June 8, 2026
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
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