1N3070TR
Small Signal Diode, Single, 200 V, 500 mA, 1 V, 50 ns, 4 A
- Manufacturer: ONSEMI
- Product type: Small Signal Diodes
- Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:200V; Forward Current If(AV):500mA; Forward Voltage VF Max:1V; Reverse Recovery Time trr Max:50ns; Forward Surge Current Ifsm
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 2Pins
- Product Range: 1N3070
- Qualification: -
- Diode Mounting: Through Hole
- Diode Case Style: DO-204AH
- Diode Configuration: Single
- Forward Voltage Max: 1V
- Forward Surge Current: 4A
- Reverse Recovery Time: 50ns
- Average Forward Current: 500mA
- Operating Temperature Max: 175°C
- Repetitive Peak Reverse Voltage: 200V
| Delivery and price | |
|---|---|
| Units per pack | 10000 |
| Price | 0.017 € |
| Current stock | 1000+ |
| Lead time | 30 days |
**==> picture [92 x 134] intentionally omitted <==** **----- Start of picture text -----**<br> 1N3070<br>DO-35<br>COLOR BAND DENOTES CATHODE<br>**----- End of picture text -----**<br> ## **Small Signal Diode** ## **Absolute Maximum Ratings *** TA = 25°C unless otherwise noted |**Absolute Maximum Ratings ***TA = 25°C unless otherwise notedA = 25°C unless otherwise noted= 25°C unless otherwise noted°C unless otherwise notedC unless otherwise noted|| |---|---| |**Parameter**|**Value**| |Maximum Repetitive Reverse Voltage|200| |Average Rectified Forward Current|500| |Non-repetitive Peak Forward Surge Current<br>Pulse Width = 1.0 second<br>Pulse Width = 1.0 microsecond|1.0<br>4.0| |Storage Temperature Range|-65 to +200| |Operating Junction Temperature|175| - These ratings are limiting values above which the serviceability of the diode may be impaired. ## **NOTES:** - 1) These ratings are based on a maximum junction temperature of 200 degrees C. - 2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. ## **Thermal Characteristics** |**Thermal Characteristics**|| |---|---| |**Parameter**|**Value**| |Power Dissipation|500| |Thermal Resistance, Junction to Ambient|300| ## **Electrical Characteristics** TA=25°C unless otherwise noted |**Symbol**|**Parameter**|**Test Conditions**|**Min.**|**Max.**|**Units**| |---|---|---|---|---|---| |VR|Breakdown Voltage|IR= 100µA|200||V| |VF|Forward Voltage|IF= 100mA||1.0|V| |IR|Reverse Leakage|VR= 175V||100|nA| |||VR= 175V, TA= 150°C||100|µA| |CT|Total Capacitance|VR= 0V, f = 1.0MHz||5|pF| |trr|Reverse RecoveryTime|IF= IR= 30mA, RL = 100Ω||50|ns| ©2004 Fairchild Semiconductor Corporation 1N3070, Rev. A ## **TRADEMARKS** The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. |ACEx™|FAST®|ISOPLANAR™|Power247™|SuperFET™| |---|---|---|---|---| |ActiveArray™<br>Bottomless™|FASTr™<br>FPS™|LittleFET™<br>MICROCOUPLER™|PowerSaver™<br>PowerTrench®|SuperSOT™-3<br>SuperSOT™-6| |CoolFET™|FRFET™|MicroFET™|QFET®|SuperSOT™-8| |_CROSSVOLT_™|GlobalOptoisolator™|MicroPak™|QS™|SyncFET™| |DOME™|GTO™|MICROWIRE™|QT Optoelectronics™|TinyLogic®| |EcoSPARK™|HiSeC™|MSX™|Quiet Series™|TINYOPTO™| |E2CMOS™|I2C™|MSXPro™|RapidConfigure™|TruTranslation™| |EnSigna™<br>FACT™|_i-Lo_™<br>ImpliedDisconnect™|OCX™<br>OCXPro™|RapidConnect™<br>µSerDes™|UHC™<br>UltraFET®| |FACT Quiet Series™||OPTOLOGIC®|SILENT SWITCHER®|VCX™| |Across the board. Around the world.™||OPTOPLANAR™|SMART START™|| |The Power Franchise®||PACMAN™|SPM™|| |Programmable Active|Droop™|POP™|Stealth™|| ## **DISCLAIMER** FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. ## **LIFE SUPPORT POLICY** FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ## **PRODUCT STATUS DEFINITIONS** ## **Definition of Terms** |**Definition of Terms**||| |---|---|---| |**Datasheet Identification**|**Product Status**|**Definition**| |Advance Information|Formative or In<br>Design|This datasheet contains the design specifications for<br>product development. Specifications may change in<br>any manner without notice.| |Preliminary|First Production|This datasheet contains preliminary data, and<br>supplementary data will be published at a later date.<br>Fairchild Semiconductor reserves the right to make<br>changes at any time without notice in order to improve<br>design.| |No Identification Needed|Full Production|This datasheet contains final specifications. Fairchild<br>Semiconductor reserves the right to make changes at<br>any time without notice in order to improve design.| |Obsolete|Not In Production|This datasheet contains specifications on a product<br>that has been discontinued by Fairchild semiconductor.<br>The datasheet is printed for reference information only.| ©2004 Fairchild Semiconductor Corporation Rev. I11
Updated at June 8, 2026
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
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