1HN04CH-TL-W

## Ordering number : ENA0925C **1HN04CH** ~~—~~ **Power MOSFET 100V, 8Ω, 270mA, Single N-Channel** 

http://onsemi.com 

## **Features** 

 4V drive 

 Halogen free compliance 

## **Specifications** 

## **Absolute Maximum Ratings** at Ta = 25  C 

|Parameter|Symbol|Conditions|Value|Unit|
|---|---|---|---|---|
|Drain to Source Voltage|VDSS||100|V|
|Gate to Source Voltage|VGSS||20|V|
|Drain Current (DC)|ID||270|mA|
|Drain Current (Pulse)|IDP|PW10s, duty cycle1%|1080|mA|
|Power Dissipation|PD|When mounted on ceramic substrate (900mm20.8mm)|0.6|W|
|Junction Temperature|Tj||150|C|
|Storage Temperature|Tstg||55 to +150|C|



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This product is designed to “ESD immunity < 200V*”, so please take care when handling.<br>* Machine Model<br>Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,<br>damage may occur and reliability may be affected.<br>Cn<br>Thermal Resistance Ratings<br>Parameter  Symbol  Value  Unit<br>Junction to Ambient<br>RJA  208 C/W<br>ee When mounted on ceramic substrate (900mm [2] 0.8mm)<br>Electrical Characteristics  at Ta    25  C<br>Value<br>Parameter  Symbol  Conditions  Unit<br>min  typ max<br>Drain to Source Breakdown Voltage  V(BR)DSS ID=1mA, VGS=0V  100  V<br>———— Zero-Gate Voltage Drain Current  IDSS VDS=100V, VGS=0V  1 A<br>Gate to Source Leakage Current  IGSS VGS=±16V, VDS=0V  10 A<br>Gate Threshold Voltage  VGS(th)  VDS=10V, ID=100A  1.2  2.6 V<br>Forward Transconductance  gFS VDS=10V, ID=140mA  260  mS<br>RDS(on)1  ID=140mA, VGS=10V  6  8 <br>Static Drain to Source On-State Resistance<br>RDS(on)2  ID=70mA, VGS=4V  6.8  9.8 <br>Input Capacitance  Ciss  15  pF<br>Output Capacitance Coss  VDS=20V, f=1MHz  3.1  pF<br>a——— Reverse Transfer Capacitance Crss  0.9  pF<br>Continued on next page.<br>ORDERING INFORMATION<br>See detailed ordering and shipping information on page 2 of this data sheet.<br>**----- End of picture text -----**<br>


Semiconductor Components Industries, LLC, 2014 **July, 2014** 

72514HK TC-00003129/52114HK/42814TKIM/90507TIIM PE No.A0925-1/5 

**1HN04CH** 

|||**1HN04CH**|||||
|---|---|---|---|---|---|---|
|Continued frompreceding page.|||||||
|Parameter|Symbol|Conditions|min|Value||Unit|
|||||typ|max||
|Turn-ON Delay Time|td(on)|See specified Test Circuit||10||ns|
|Rise Time|tr|||7.4||ns|
|Turn-OFF Delay Time|td(off)|||58||ns|
|Fall Time|tf|||39||ns|
|Total Gate Charge|Qg|VDS=50V, VGS=10V, ID=270mA||0.9||nC|
|Gate to Source Charge|Qgs|||0.19||nC|
|Gate to Drain “Miller” Charge|Qgd|||0.26||nC|
|Forward Diode Voltage|VSD|IS=270mA, VGS=0V||0.88|1.2|V|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 

## **Ordering & Package Information                           Packing Type:TL           Marking** 

|Device|Package|Shipping|note|
|---|---|---|---|
|1HN04CH-TL-W|CPH3, SC-59<br>SOT-23, TO-236|3,000<br>pcs. / reel|Pb-Free<br>and<br>Halogen Free|



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## **Electrical Connection** 

## **Switching Time Test Circuit** 

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No.A0925-2/5 

**1HN04CH** 

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No.A0925-3/5 

**1HN04CH** 

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No.A0925-4/5 

**1HN04CH** 

## **Package Dimensions** 

## 1HN04CH-TL-W 

## **CPH3** 

CASE 318BA ISSUE O 

unit : mm 

1: Gate 

2: Source 

3: Drain 

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Recommended Soldering<br>Footprint 0.6<br>0.95 0.95<br>1.4<br>2.4<br>**----- End of picture text -----**<br>


Note on usage : Since the 1HN04CH is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 

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PS No.A0925-5/5